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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH42N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 42A | TO-247-3 | 3 | 8 Weeks | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 15ns | 16 ns | 72 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 168A | 0.06Ohm | 200V | N-Channel | 4400pF @ 25V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 42A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PMZB150UNEYL | Nexperia USA Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmzb150uneyl-datasheets-4903.pdf | 3-XFDFN | 8 Weeks | 3 | DFN1006B-3 | 93pF | 1.5A | 20V | 350mW Ta 6.25W Tc | 170mOhm | N-Channel | 93pF @ 10V | 200mOhm @ 1.5A, 4.5V | 950mV @ 250μA | 1.5A Ta | 1.6nC @ 4.5V | 200 mΩ | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT77N60JC3 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt77n60jc3-datasheets-4907.pdf | 600V | 77A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 24 Weeks | 30.000004g | 4 | no | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 568W | 1 | 18 ns | 27ns | 8 ns | 110 ns | 77A | 20V | SILICON | ISOLATED | 568W Tc | 0.035Ohm | 600V | N-Channel | 13600pF @ 25V | 35m Ω @ 60A, 10V | 3.9V @ 5.4mA | 77A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STW42N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb42n65m5-datasheets-5509.pdf | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 17 Weeks | No SVHC | 79mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW42N65M5 | e3 | Tin (Sn) | STW42N | 3 | 1 | Single | 190W | 1 | FET General Purpose Power | 150°C | 61 ns | 24ns | 13 ns | 65 ns | 33A | 25V | SILICON | SWITCHING | 4V | 190W Tc | 950 mJ | 650V | N-Channel | 4650pF @ 100V | 79m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 100nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| TK17E80W,S1X | Toshiba Semiconductor and Storage | $3.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | TO-220 | 800V | 180W Tc | N-Channel | 2050pF @ 300V | 290mOhm @ 8.5A, 10V | 4V @ 850μA | 17A Ta | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH36N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfh36n50p-datasheets-4795.pdf | 500V | 36A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 5 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 540W | 1 | FET General Purpose Power | 25 ns | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | TO-247AD | 90A | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| AOK20N60L | Alpha & Omega Semiconductor Inc. | $5.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aok20n60l-datasheets-0598.pdf | TO-247-3 | 18 Weeks | 20A | 600V | 417W Tc | N-Channel | 3680pF @ 25V | 370m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA26N30X3 | IXYS | $3.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy26n30x3-datasheets-3776.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 300V | 170W Tc | N-Channel | 1.465nF @ 25V | 66m Ω @ 13A, 10V | 4.5V @ 500μA | 26A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK39N60W5,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-247-3 | 16 Weeks | TO-247 | 4.1nF | 38.8A | 600V | 270W Tc | N-Channel | 4100pF @ 300V | 74mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 38.8A Ta | 135nC @ 10V | 74 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6D210-60EX | Nexperia USA Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk6d21060ex-datasheets-2939.pdf | 6-UDFN Exposed Pad | 8 Weeks | 60V | 2W Ta 15W Tc | N-Channel | 110pF @ 30V | 210m Ω @ 2.1A, 10V | 2.7V @ 250μA | 2.1A Ta 5.7A Tc | 3.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW56N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw56n65m2-datasheets-4811.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW56N | Single | NOT SPECIFIED | FET General Purpose Power | 19 ns | 146 ns | 49A | 25V | 650V | 358W Tc | N-Channel | 3900pF @ 100V | 62m Ω @ 24.5A, 10V | 4V @ 250μA | 49A Tc | 93nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW68N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STW68N | NOT SPECIFIED | 35mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA20N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stwa20n95k5-datasheets-4815.pdf | TO-247-3 | Lead Free | 17 Weeks | 38.000013g | EAR99 | NOT SPECIFIED | STWA20 | 1 | Single | NOT SPECIFIED | 17 ns | 12ns | 20 ns | 70 ns | 17.5A | 30V | 950V | 250W Tc | N-Channel | 1500pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 17.5A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP26N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 250MOhm | 3 | No | 1 | Single | 470W | 1 | TO-247-3 | 5.02nF | 31 ns | 110ns | 42 ns | 47 ns | 26A | 30V | 600V | 5V | 470W Tc | 210mOhm | 600V | N-Channel | 5020pF @ 25V | 5 V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 250 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH24N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfh24n50-datasheets-4823.pdf | 500V | 24A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 230mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 30 ns | 65 ns | 24A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 250 ns | 250 ns | 96A | 500V | N-Channel | 4200pF @ 25V | 4 V | 230m Ω @ 12A, 10V | 4V @ 4mA | 24A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQA62N25C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa62n25c-datasheets-4826.pdf | 250V | 62A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 35MOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 298W | 1 | FET General Purpose Power | Not Qualified | 75 ns | 395ns | 335 ns | 245 ns | 62A | 30V | SILICON | SWITCHING | 4V | 298W Tc | 248A | 250V | N-Channel | 6280pF @ 25V | 35m Ω @ 31A, 10V | 4V @ 250μA | 62A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IPW65R065C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r065c7xksa1-datasheets-4832.pdf | TO-247-3 | Lead Free | 18 Weeks | 3 | Halogen Free | PG-TO247-3 | 3.02nF | 17 ns | 14ns | 7 ns | 72 ns | 33A | 20V | 650V | 650V | 171W Tc | 58mOhm | N-Channel | 3020pF @ 400V | 65mOhm @ 17.1A, 10V | 4V @ 850μA | 33A Tc | 64nC @ 10V | 65 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N20T | IXYS | $14.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20t-datasheets-4838.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1150W Tc | 470A | 0.011Ohm | 3000 mJ | N-Channel | 19600pF @ 25V | 11m Ω @ 60A, 10V | 5V @ 4mA | 170A Tc | 265nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STFW12N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf12n120k5-datasheets-1926.pdf | ISOWATT218FX | 3 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NO | SINGLE | NOT SPECIFIED | STFW | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 63W Tc | 12A | 48A | 0.69Ohm | N-Channel | 1370pF @ 100V | 690m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 44.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH47N60F-F133 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch47n60ff133-datasheets-4784.pdf | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 12 Weeks | 6.39g | No SVHC | 73MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | FCH47N60 | Single | 417W | 1 | FET General Purpose Power | 185 ns | 450ns | 160 ns | 520 ns | 47A | 30V | 600V | 3V | 417W Tc | 650V | N-Channel | 8000pF @ 25V | 70m Ω @ 23.5A, 10V | 5V @ 250μA | 47A Tc | 270nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R080P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r080p7xksa1-datasheets-4792.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 129W Tc | TO-220AB | 110A | 0.08Ohm | 118 mJ | N-Channel | 2180pF @ 400V | 80m Ω @ 11.8A, 10V | 4V @ 590μA | 37A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW32N50C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw32n50c3fksa1-datasheets-4698.pdf | TO-247-3 | 3 | 8 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 560V | 500V | 284W Tc | TO-247AA | 32A | 96A | 0.11Ohm | 1100 mJ | N-Channel | 4200pF @ 25V | 110m Ω @ 20A, 10V | 3.9V @ 1.8mA | 32A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH72N30X3 | IXYS | $11.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-247-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75652G3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75652g3-datasheets-4706.pdf | 100V | 75A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 10 Weeks | 6.39g | No SVHC | 8mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 515W | 1 | FET General Purpose Power | 18.5 ns | 195ns | 190 ns | 80 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 515W Tc | 100V | N-Channel | 7585pF @ 25V | 4 V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 475nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TSM60NB099CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb099czc0g-datasheets-4715.pdf | TO-220-3 | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 298W Tc | N-Channel | 2587pF @ 100V | 99m Ω @ 11.3A, 10V | 4V @ 250μA | 38A Tc | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R060P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipw60r060p7xksa1-datasheets-4718.pdf | TO-247-3 | 25.4mm | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 164W | 1 | 150°C | R-PSFM-T3 | 23 ns | 79 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 164W Tc | 0.06Ohm | 600V | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFP72N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-220-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R110CFDAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r110cfdafksa1-datasheets-4724.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | HIGH RELIABILITY | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 277.8W Tc | 99.6A | 0.11Ohm | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| E3M0120090D | Cree/Wolfspeed | $2.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/creewolfspeed-e3m0120090d-datasheets-4730.pdf | TO-247-3 | 13 Weeks | TO-247-3 | 900V | 97W Tc | N-Channel | 350pF @ 600V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 23A Tc | 17.3nC @ 15V | 15V | +18V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG40N60E-GE3 | Vishay Siliconix | $26.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg40n60ege3-datasheets-4734.pdf | TO-247-3 | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 329W Tc | TO-247AC | 40A | 123A | 0.075Ohm | 691 mJ | N-Channel | 4436pF @ 100V | 75m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 197nC @ 10V | 10V | ±30V |
