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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF1405ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1405zpbf-datasheets-9317.pdf | 55V | 75A | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 4.9Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 230W | 1 | FET General Purpose Power | 18 ns | 110ns | 82 ns | 48 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | TO-220AB | 600A | 420 mJ | 55V | N-Channel | 4780pF @ 25V | 4 V | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPP06N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp06n80c3xksa1-datasheets-9192.pdf | TO-220-3 | 3 | 18 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 83W Tc | TO-220AB | 6A | 18A | 0.9Ohm | 230 mJ | N-Channel | 785pF @ 100V | 900m Ω @ 3.8A, 10V | 3.9V @ 250μA | 6A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR540Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfr540z-datasheets-9214.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 26 Weeks | No SVHC | 3 | EAR99 | No | 91W | 1 | FET General Purpose Power | 14 ns | 42ns | 34 ns | 43 ns | 35A | 20V | Single | 4V | 91W Tc | 100V | N-Channel | 1690pF @ 25V | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 35A Tc | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R0-40PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn8r040ps127-datasheets-9224.pdf | TO-220-3 | 3 | 12 Weeks | 3 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 86W Tc | TO-220AB | 77A | 0.0076Ohm | N-Channel | 1262pF @ 12V | 7.6m Ω @ 25A, 10V | 4V @ 1mA | 77A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6015KNX | ROHM Semiconductor | $1.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 60W Tc | TO-220AB | 15A | 45A | 0.29Ohm | 284 mJ | N-Channel | 1050pF @ 25V | 290m Ω @ 6.5A, 10V | 5V @ 1mA | 15A Tc | 27.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19503KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19503 | 1 | Single | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | 7 ns | 3ns | 2 ns | 11 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 80V | 80V | 2.8V | 188W Tc | 94A | 247A | N-Channel | 2730pF @ 40V | 9.2m Ω @ 60A, 10V | 3.4V @ 250μA | 100A Ta | 36nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| HUF75645S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75645s3st-datasheets-9149.pdf | 100V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 11.33mm | 4.83mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 14mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 117ns | 97 ns | 41 ns | 75mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 100V | N-Channel | 3790pF @ 25V | 4 V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFU6215PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr6215trpbf-datasheets-6749.pdf | -150V | -13A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 580MOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 110W | 1 | Other Transistors | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | -150V | SILICON | DRAIN | SWITCHING | 150V | -4V | 110W Tc | 44A | -150V | P-Channel | 860pF @ 25V | -4 V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SUM90N03-2M2P-E3 | Vishay Siliconix | $3.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90n032m2pe3-datasheets-9104.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 2.2mOhm | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Powers | R-PSSO-G2 | 55 ns | 180ns | 12 ns | 55 ns | 33A | 20V | SILICON | SWITCHING | 3.75W Ta 250W Tc | 90A | 90A | 30V | N-Channel | 12065pF @ 15V | 2.2m Ω @ 32A, 10V | 2.5V @ 250μA | 90A Tc | 257nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQM60030E_GE3 | Vishay Siliconix | $2.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm60030ege3-datasheets-9119.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 80V | 80V | 375W Tc | 120A | 250A | 0.0032Ohm | 245 mJ | N-Channel | 12000pF @ 25V | 3.2m Ω @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2804STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf2804strlpbf-datasheets-9077.pdf | 40V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 2MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 300W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 13 ns | 120ns | 130 ns | 130 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 84 ns | 270A | 540 mJ | 40V | N-Channel | 6450pF @ 25V | 2m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TSM70N380CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n380cprog-datasheets-8737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 36 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 125W Tc | 11A | 33A | 0.38Ohm | 156 mJ | N-Channel | 981pF @ 100V | 380m Ω @ 3.3A, 10V | 4V @ 250μA | 11A Tc | 18.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP7LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp7ln80k5-datasheets-9157.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP7LN | NOT SPECIFIED | 5A | 800V | 85W Tc | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R280C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r280c6atma1-datasheets-8220.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 104W | 1 | Not Qualified | R-PSSO-G2 | 13 ns | 11ns | 12 ns | 100 ns | 13.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDP2572 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp2572-datasheets-9169.pdf | 150V | 29A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 135W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 14ns | 14 ns | 31 ns | 29A | 20V | SILICON | DRAIN | SWITCHING | 4V | 135W Tc | TO-220AB | 4A | 0.054Ohm | 150V | N-Channel | 1770pF @ 25V | 4 V | 54m Ω @ 9A, 10V | 4V @ 250μA | 4A Ta 29A Tc | 34nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TK20V60W5,LVQ | Toshiba Semiconductor and Storage | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 4-VSFN Exposed Pad | 16 Weeks | 20A | 600V | 156W Tc | N-Channel | 1800pF @ 300V | 190m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 55nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF4104SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf4104spbf-datasheets-9182.pdf | 75V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 15 Weeks | No SVHC | 5.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 130ns | 77 ns | 38 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | 35 ns | 470A | 220 mJ | 40V | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PSMN7R0-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn7r0100ps127-datasheets-9059.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 269W | 1 | 34.6 ns | 45.6ns | 49.5 ns | 103.9 ns | 100A | 20V | 100V | DRAIN | SWITCHING | 269W Tc | TO-220AB | 475A | 0.0068Ohm | 100V | N-Channel | 6686pF @ 50V | 12m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120PBF | Vishay Siliconix | $2.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 600mOhm | 3 | Tin | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | -4V | 2.5W Ta 42W Tc | 600mOhm | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STD13NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13nm60nd-datasheets-4100.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | 380mOhm | 3 | EAR99 | No | GULL WING | STD13 | Single | 109W | 1 | R-PSSO-G2 | 46.5 ns | 10ns | 15.4 ns | 9.6 ns | 11A | 25V | SILICON | DRAIN | SWITCHING | 600V | 109W Tc | 44A | 650V | N-Channel | 845pF @ 50V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 24.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R190CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r190cexksa2-datasheets-9088.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 18.5A | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 0.19Ohm | N-Channel | 1137pF @ 100V | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 18.5A Tc | 47.2nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R8-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r880bs118-datasheets-8972.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 41 ns | 43ns | 44 ns | 109 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 306W Tc | 824A | 676 mJ | 80V | N-Channel | 9961pF @ 40V | 3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 139nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF33N10L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf33n10l-datasheets-8938.pdf | 100V | 18A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 10 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 41W | 1 | FET General Purpose Power | 17 ns | 470ns | 120 ns | 70 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 41W Tc | 72A | 0.055Ohm | 100V | N-Channel | 1630pF @ 25V | 52m Ω @ 9A, 10V | 2V @ 250μA | 18A Tc | 40nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF640NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf640nstrlpbf-datasheets-9047.pdf | 200V | 18A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 15.01mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 150mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | Single | 30 | 150W | 1 | FET General Purpose Power | 175°C | 10 ns | 19ns | 5.5 ns | 23 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | 72A | 247 mJ | 200V | N-Channel | 1160pF @ 25V | 4 V | 150m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STP10N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10n60m2-datasheets-8952.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | 600mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP10 | 1 | Single | 1 | 8.8 ns | 8ns | 13.2 ns | 32.5 ns | 7.5A | 25V | SILICON | DRAIN | SWITCHING | 85W Tc | TO-220AB | 600V | N-Channel | 400pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7.5A Tc | 13.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R6-100BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn5r6100bs118-datasheets-8716.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 31 ns | 46ns | 34 ns | 83 ns | 100A | 20V | 100V | SILICON | DRAIN | SWITCHING | 306W Tc | 0.0056Ohm | 468 mJ | 100V | N-Channel | 8061pF @ 50V | 5.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 141nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1104PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf1104pbf-datasheets-8981.pdf | 40V | 100A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 9mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | Single | 170W | 1 | FET General Purpose Power | 15 ns | 114ns | 19 ns | 28 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | TO-220AB | 110 ns | 400A | 40V | N-Channel | 2900pF @ 25V | 4 V | 9m Ω @ 60A, 10V | 4V @ 250μA | 100A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SQD25N15-52_GE3 | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n1552ge3-datasheets-8967.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | Tin | No | 1 | Single | 107W | 1 | TO-252, (D-Pak) | 2.2nF | 11 ns | 11ns | 6 ns | 20 ns | 25A | 20V | 150V | 3V | 107W Tc | 52mOhm | N-Channel | 2200pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 51nC @ 10V | 52 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF100B202 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf100b202-datasheets-9002.pdf | TO-220-3 | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 97A | 100V | 221W Tc | N-Channel | 4476pF @ 50V | 8.6m Ω @ 58A, 10V | 4V @ 150μA | 97A Tc | 116nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7530TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7530pbf-datasheets-0453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 52 ns | 141ns | 104 ns | 172 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 375W Tc | 760A | 0.002Ohm | N-Channel | 13703pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 411nC @ 10V | 6V 10V | ±20V |
