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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFU6215PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr6215trpbf-datasheets-6749.pdf | -150V | -13A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 580MOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 110W | 1 | Other Transistors | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | -150V | SILICON | DRAIN | SWITCHING | 150V | -4V | 110W Tc | 44A | -150V | P-Channel | 860pF @ 25V | -4 V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPA65R650CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa65r650cexksa1-datasheets-9266.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 6.000006g | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | NOT SPECIFIED | 7A | 650V | 28W Tc | N-Channel | 440pF @ 100V | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R650CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa80r650cexksa2-datasheets-9271.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | Halogen Free | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 8A | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 33W Tc | TO-220AB | 8A | 24A | 0.65Ohm | 340 mJ | N-Channel | 1100pF @ 100V | 650m Ω @ 5.1A, 10V | 3.9V @ 470μA | 8A Ta | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPA06N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa06n80c3xksa1-datasheets-9275.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 39W Tc | TO-220AB | 6A | 18A | 0.9Ohm | 230 mJ | N-Channel | 785pF @ 100V | 900m Ω @ 3.8A, 10V | 3.9V @ 250μA | 6A Tc | 41nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI086N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi086n10n3gxksa1-datasheets-9282.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 18 Weeks | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 125W | 1 | R-PSIP-T3 | 18 ns | 42ns | 8 ns | 31 ns | 80A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 125W Tc | 320A | 0.0086Ohm | N-Channel | 3980pF @ 50V | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STB23N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb23n80k5-datasheets-9288.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | ACTIVE (Last Updated: 2 weeks ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STB23N | NOT SPECIFIED | 16A | 800V | 190W Tc | N-Channel | 1000pF @ 100V | 280m Ω @ 8A, 10V | 5V @ 100μA | 16A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP80N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp80n06-datasheets-9292.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 5 Weeks | 1.8g | 10MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 176W | 1 | FET General Purpose Power | Not Qualified | 32 ns | 259ns | 113 ns | 136 ns | 80A | 20V | SILICON | SWITCHING | 176W Tc | TO-220AB | 480 mJ | 60V | N-Channel | 3190pF @ 25V | 10m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STF3N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3n80k5-datasheets-8152.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | STF3N | 1 | Single | 1 | 8.5 ns | 7.5ns | 25 ns | 20.5 ns | 2.5A | 30V | SILICON | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 65 mJ | 800V | N-Channel | 130pF @ 100V | 3.5 Ω @ 1A, 10V | 5V @ 100μA | 2.5A Tc | 9.5nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK20V60W5,LVQ | Toshiba Semiconductor and Storage | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 4-VSFN Exposed Pad | 16 Weeks | 20A | 600V | 156W Tc | N-Channel | 1800pF @ 300V | 190m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 55nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF4104SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf4104spbf-datasheets-9182.pdf | 75V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 15 Weeks | No SVHC | 5.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 130ns | 77 ns | 38 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | 35 ns | 470A | 220 mJ | 40V | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| PSMN7R0-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn7r0100ps127-datasheets-9059.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 269W | 1 | 34.6 ns | 45.6ns | 49.5 ns | 103.9 ns | 100A | 20V | 100V | DRAIN | SWITCHING | 269W Tc | TO-220AB | 475A | 0.0068Ohm | 100V | N-Channel | 6686pF @ 50V | 12m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120PBF | Vishay Siliconix | $2.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 600mOhm | 3 | Tin | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | -4V | 2.5W Ta 42W Tc | 600mOhm | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STD13NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13nm60nd-datasheets-4100.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | 380mOhm | 3 | EAR99 | No | GULL WING | STD13 | Single | 109W | 1 | R-PSSO-G2 | 46.5 ns | 10ns | 15.4 ns | 9.6 ns | 11A | 25V | SILICON | DRAIN | SWITCHING | 600V | 109W Tc | 44A | 650V | N-Channel | 845pF @ 50V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 24.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA50R190CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r190cexksa2-datasheets-9088.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 18.5A | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 0.19Ohm | N-Channel | 1137pF @ 100V | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 18.5A Tc | 47.2nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R8-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r880bs118-datasheets-8972.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 41 ns | 43ns | 44 ns | 109 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 306W Tc | 824A | 676 mJ | 80V | N-Channel | 9961pF @ 40V | 3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 139nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUM90N03-2M2P-E3 | Vishay Siliconix | $3.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90n032m2pe3-datasheets-9104.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 2.2mOhm | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Powers | R-PSSO-G2 | 55 ns | 180ns | 12 ns | 55 ns | 33A | 20V | SILICON | SWITCHING | 3.75W Ta 250W Tc | 90A | 90A | 30V | N-Channel | 12065pF @ 15V | 2.2m Ω @ 32A, 10V | 2.5V @ 250μA | 90A Tc | 257nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQM60030E_GE3 | Vishay Siliconix | $2.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm60030ege3-datasheets-9119.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 80V | 80V | 375W Tc | 120A | 250A | 0.0032Ohm | 245 mJ | N-Channel | 12000pF @ 25V | 3.2m Ω @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2804STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf2804strlpbf-datasheets-9077.pdf | 40V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 2MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 300W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 13 ns | 120ns | 130 ns | 130 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 84 ns | 270A | 540 mJ | 40V | N-Channel | 6450pF @ 25V | 2m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| TSM70N380CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n380cprog-datasheets-8737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 36 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 125W Tc | 11A | 33A | 0.38Ohm | 156 mJ | N-Channel | 981pF @ 100V | 380m Ω @ 3.3A, 10V | 4V @ 250μA | 11A Tc | 18.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP7LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp7ln80k5-datasheets-9157.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP7LN | NOT SPECIFIED | 5A | 800V | 85W Tc | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R280C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r280c6atma1-datasheets-8220.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 104W | 1 | Not Qualified | R-PSSO-G2 | 13 ns | 11ns | 12 ns | 100 ns | 13.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 40A | 0.28Ohm | 284 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDP2572 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp2572-datasheets-9169.pdf | 150V | 29A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 135W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 14ns | 14 ns | 31 ns | 29A | 20V | SILICON | DRAIN | SWITCHING | 4V | 135W Tc | TO-220AB | 4A | 0.054Ohm | 150V | N-Channel | 1770pF @ 25V | 4 V | 54m Ω @ 9A, 10V | 4V @ 250μA | 4A Ta 29A Tc | 34nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFS7530TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7530pbf-datasheets-0453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 52 ns | 141ns | 104 ns | 172 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 375W Tc | 760A | 0.002Ohm | N-Channel | 13703pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 411nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP072N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp072n10n3gxksa1-datasheets-9020.pdf | TO-220-3 | 3 | 13 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 150W Tc | TO-220AB | 80A | 320A | 0.0072Ohm | 160 mJ | N-Channel | 4910pF @ 50V | 7.2m Ω @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 68nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R0-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn5r080ps127-datasheets-9026.pdf | TO-220-3 | 31.75mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 453.59237mg | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 270W | 1 | 33 ns | 21ns | 14 ns | 73 ns | 100A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 270W Tc | TO-220AB | 598A | 0.0047Ohm | 80V | N-Channel | 6793pF @ 12V | 4.7m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 101nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SUM40010EL-GE3 | Vishay Siliconix | $28.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum40010elge3-datasheets-8898.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | 120A | 300A | 0.0016Ohm | 320 mJ | N-Channel | 11155pF @ 30V | 1.6m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STF10N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf10n60dm2-datasheets-8916.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF10N | 600V | 25W Tc | N-Channel | 529pF @ 100V | 530m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R1K2C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp90r1k2c3xksa1-datasheets-8923.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 83W | 1 | 70 ns | 20ns | 40 ns | 400 ns | 5.1A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83W Tc | TO-220AB | 68 mJ | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3306GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfb3306gpbf-datasheets-8930.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | 3 | 10 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 76ns | 77 ns | 40 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 620A | 0.0042Ohm | 60V | N-Channel | 4520pF @ 50V | 4 V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQPF33N10L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf33n10l-datasheets-8938.pdf | 100V | 18A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 10 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 41W | 1 | FET General Purpose Power | 17 ns | 470ns | 120 ns | 70 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 41W Tc | 72A | 0.055Ohm | 100V | N-Channel | 1630pF @ 25V | 52m Ω @ 9A, 10V | 2V @ 250μA | 18A Tc | 40nC @ 5V | 5V 10V | ±20V |
