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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Voltage - Input (Max) | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Applications | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Min Input Voltage | Output Voltage | Output Current | Dropout Voltage | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Function | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Breakdown Voltage | Threshold Voltage | Output Configuration | Fault Protection | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Output Peak Current Limit-Nom | Built-in Protections | Turn On Time | Turn Off Time | Rise / Fall Time (Typ) | Current - Peak Output | Output Current per Channel | Supply Voltage1-Nom | High Side Driver | Channel Type | Current - Output / Channel | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Current - Quiescent (Iq) | Driven Configuration | Gate Type | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Avalanche Energy Rating (Eas) | Control Features | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Min Current Limit | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Resistance - RDS(On) | Rds On (Typ) | Load Type | Motor Type - Stepper | Motor Type - AC, DC | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIP41103DM-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 1MHz | 3mA | Non-Inverting | 1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sip41103dmt1e3-datasheets-5329.pdf | PowerPAK® MLP33-10 | 3mm | 3mm | 3mA | 10 | 10 | 2 | yes | EAR99 | No | 1 | e3 | Matte Tin (Sn) | 960mW | 4.5V~5.5V | DUAL | FLAT | 260 | 5V | 0.5mm | SIP41103 | 10 | 40 | 960mW | MOSFET Drivers | 5V | 1.5A | 55ns | 45 ns | 30 ns | 1.5A | 0.03 μs | 0.03 μs | 32ns 36ns | 5V | YES | Synchronous | Half-Bridge | N-Channel MOSFET | 900mA 1.1A | 50V | 0.5V 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | 60V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | no | EAR99 | HIGH RELIABILITY | unknown | 8541.29.00.95 | SINGLE | GULL WING | 225 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.7W Ta 190W Tc | 290A | 0.018Ohm | 100 mJ | N-Channel | 2400pF @ 25V | 18m Ω @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4117A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | DEPLETION MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n4119ae3-datasheets-3988.pdf | TO-206AF, TO-72-4 Metal Can | Lead Free | 4 | Unknown | 3 | EAR99 | No | e3 | Matte Tin (Sn) | 300mW | BOTTOM | WIRE | 8 | Single | 300mW | 1 | Other Transistors | O-MBCY-W4 | -40V | SILICON | AMPLIFIER | JUNCTION | -70V | 1.5 pF | N-Channel | 3pF @ 10V | 600mV @ 1nA | 40V | 30μA @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL520STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl520s-datasheets-4937.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.2A | 100V | 3.7W Ta 60W Tc | N-Channel | 490pF @ 25V | 270m Ω @ 5.5A, 5V | 2V @ 250μA | 9.2A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4118A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | DEPLETION MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n4119ae3-datasheets-3988.pdf | TO-206AF, TO-72-4 Metal Can | 4 | 3 | EAR99 | No | e3 | Matte Tin (Sn) | 300mW | BOTTOM | WIRE | 8 | Single | 300mW | 1 | Other Transistors | O-MBCY-W4 | -40V | SILICON | AMPLIFIER | JUNCTION | -70V | 1.5 pF | N-Channel | 3pF @ 10V | 1V @ 1nA | 40V | 80μA @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540STRR | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irl540spbf-datasheets-3549.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 28A | 100V | 3.7W Ta 150W Tc | N-Channel | 2200pF @ 25V | 77m Ω @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5114 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2005 | -50mA | TO-206AA, TO-18-3 Metal Can | Lead Free | 3 | Single | TO-206AA (TO-18) | -90mA | 30V | 30V | 75Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640L | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | unknown | 3.1W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | TO-220AB | 68A | 0.18Ohm | 580 mJ | N-Channel | 1800pF @ 25V | 180m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4860JTXV02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 2009 | TO-206AA, TO-18-3 Metal Can | 3 | Yes | Single | -30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5857DU-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5857dut1e3-datasheets-5947.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 58mOhm | 1 | PowerPAK® ChipFet Dual | 480pF | 5 ns | 15ns | 10 ns | 25 ns | 6A | 12V | 20V | 2.3W Ta 10.4W Tc | 58mOhm | -20V | P-Channel | 480pF @ 10V | 58mOhm @ 3.6A, 4.5V | 1.5V @ 250μA | 6A Tc | 17nC @ 10V | Schottky Diode (Isolated) | 58 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST174-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sst174e3-datasheets-4250.pdf | -50mA | TO-236-3, SC-59, SOT-23-3 | 8.193012mg | No SVHC | 3 | 350mW | Single | 350mW | TO-236 | 20pF | -135mA | 30V | 30V | 350mW | 125Ohm | P-Channel | 20pF @ 0V | 5V @ 10nA | 30V | 20mA @ 15V | 85Ohms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7138DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7138dpt1e3-datasheets-6038.pdf | PowerPAK® SO-8 | Lead Free | 5 | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 12ns | 8 ns | 50 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 5.4W Ta 96W Tc | 93 mJ | 60V | N-Channel | 6900pF @ 30V | 2 V | 7.8m Ω @ 19.7A, 10V | 4V @ 250μA | 30A Tc | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4392-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | DEPLETION MODE | ROHS3 Compliant | 2002 | /files/vishaysiliconix-2n4393-datasheets-4101.pdf | 50mA | TO-206AA, TO-18-3 Metal Can | Lead Free | 3 | Unknown | 3 | yes | EAR99 | LOW INSERTION LOSS | No | e3 | Matte Tin (Sn) | 1.8W | BOTTOM | WIRE | 260 | 3 | Single | 30 | 1.8W | 1 | Other Transistors | 25mA | -40V | SILICON | GATE | SWITCHING | 400mV | JUNCTION | -55V | 60Ohm | N-Channel | 14pF @ 20V | 2V @ 1nA | 40V | 25mA @ 20V | 60Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7802DN-T1-E3 | Vishay Siliconix | $3.90 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7802dnt1e3-datasheets-6209.pdf | PowerPAK® 1212-8 | Lead Free | No SVHC | 435MOhm | 8 | No | Single | 1.5W | 1 | PowerPAK® 1212-8 | 10 ns | 10ns | 10 ns | 21 ns | 19.5A | 20V | 250V | 3.6V | 1.5W Ta | 435mOhm | 250V | N-Channel | 435mOhm @ 1.95A, 10V | 3.6V @ 250μA | 1.24A Ta | 21nC @ 10V | 435 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5546JTX01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | TO-71-6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE822DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie822dft1ge3-datasheets-5894.pdf | 10-PolarPAK® (S) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 15 Weeks | No SVHC | 5.5MOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 15 ns | 25ns | 10 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 5.2W Ta 104W Tc | 80A | 45 mJ | N-Channel | 4200pF @ 10V | 3.4m Ω @ 18.3A, 10V | 3V @ 250μA | 50A Tc | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U310-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2004 | /files/vishaysiliconix-u310e3-datasheets-4768.pdf | 20mA | TO-206AC, TO-52-3 Metal Can | Lead Free | Unknown | 3 | No | 500mW | Single | 500mW | TO-206AC (TO-52) | 5pF | 60mA | -25V | -25V | 500mW | 35Ohm | N-Channel | 5pF @ 10V | 2.5V @ 1nA | 25V | 24mA @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM36N20-54P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum36n2054pe3-datasheets-6502.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 3.12W | TO-263 (D2Pak) | 3.1nF | 170ns | 9 ns | 27 ns | 36A | 25V | 200V | 3.12W Ta 166W Tc | 44mOhm | 200V | N-Channel | 3100pF @ 25V | 53mOhm @ 20A, 15V | 4.5V @ 250μA | 36A Tc | 127nC @ 15V | 53 mΩ | 10V 15V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC820AED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | /files/vishaysiliconix-sic820aedt1ge3-datasheets-2907.pdf | 19 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4398DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4398dyt1e3-datasheets-8277.pdf | 8-SOIC (0.154, 3.90mm Width) | Single | 1.6W | 8-SO | 5.62nF | 15ns | 15 ns | 80 ns | 19A | 20V | 20V | 1.6W Ta | 2.8mOhm | 20V | N-Channel | 5620pF @ 10V | 2.8mOhm @ 25A, 10V | 3V @ 250μA | 19A Ta | 50nC @ 4.5V | 2.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC639ACD-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | VRPower® | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | ROHS3 Compliant | /files/vishaysiliconix-sic639cdt1ge3-datasheets-7828.pdf | PowerPAK® MLP55-31L | 16 Weeks | PWM | Bootstrap Circuit, Diode Emulation, Status Flag | Synchronous Buck Converters | 4.5V~5.5V | PowerPAK® MLP55-31L | 4.5V~5.5V | Half Bridge (2) | Shoot-Through, UVLO | 50A | Inductive, Capacitive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7196DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7196dpt1ge3-datasheets-0247.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 30 | 5W | 1 | R-PDSO-C5 | 21 ns | 12ns | 12 ns | 22 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5W Ta 41.6W Tc | 50A | 20 mJ | 30V | N-Channel | 1577pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 16A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC762CD-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | DrMOS | 0.8mm | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sic762cdt1ge3-datasheets-0045.pdf | 40-PowerWFQFN Module | 6mm | Lead Free | 40 | 40 | PWM | 1 | EAR99 | unknown | 1 | Bootstrap Circuit, Diode Emulation, Status Flag | Synchronous Buck Converters | 25W | 4.5V~5.5V | QUAD | NO LEAD | 12V | 0.5mm | SIC762 | 40 | Not Qualified | 2V | 35A | 3V~24V | 10ns | 8 ns | 2 | Half Bridge | Over Temperature, Shoot-Through, UVLO | 35A | 5V | YES | Inductive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR472DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir472dpt1ge3-datasheets-0439.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 10 Weeks | 506.605978mg | Unknown | 12mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 12ns | 10 ns | 16 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.9W Ta 29.8W Tc | 50A | 24 mJ | 30V | N-Channel | 820pF @ 15V | 12m Ω @ 13.8A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC652CD-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | VRPower® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | ROHS3 Compliant | /files/vishaysiliconix-sic652acdt1ge3-datasheets-5205.pdf | PowerPAK® MLP55-31L | 16 Weeks | Logic, PWM | Bootstrap Circuit, Diode Emulation | General Purpose | 4.5V~5.5V | PowerPAK® MLP55-31L | 24V | Half Bridge | Over Current, Over Temperature, Shoot-Through, UVLO | 100A | 55A | 3Ohm LS + HS | Inductive, Capacitive, Resistive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4448DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4448dyt1e3-datasheets-0578.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3.5W | 1 | 38 ns | 22ns | 33 ns | 240 ns | 32A | 8V | SILICON | SWITCHING | 3.5W Ta 7.8W Tc | 12V | N-Channel | 12350pF @ 6V | 1.7m Ω @ 20A, 4.5V | 1V @ 250μA | 50A Tc | 150nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9986DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Power MOSFET | 2mA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9986cyt1e3-datasheets-3299.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 506.605978mg | 8 | Parallel | yes | EAR99 | No | e3 | Matte Tin (Sn) | General Purpose | 3.8V~13.2V | DUAL | GULL WING | 260 | 4.5V | 1.27mm | SI9986 | 40 | 3.8V~13.2V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (2) | TRANSIENT | 1A | Bipolar | Brushed DC, Voice Coil Motor | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002E | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n7002et1e3-datasheets-4071.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 12 Weeks | 8.193012mg | No SVHC | 3 | 1 | Single | 350mW | SOT-23-3 (TO-236) | 21pF | 240mA | 20V | 60V | 350mW Ta | 7.5Ohm | 60V | N-Channel | 21pF @ 5V | 2 V | 3Ohm @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 3 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9183DT-50-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9183dt285t1e3-datasheets-0827.pdf | 150mA | SOT-23-5 Thin, TSOT-23-5 | Lead Free | 5 | 6V | 6V | 555mW | SI9183 | TSOT-23-5 | 2V | 5V | 135mV | Fixed | 1 | Positive | 900μA | Enable | 150mA | 5V | 300mA | 1 | Over Temperature, Short Circuit | 0.22V @ 150mA | 60dB ~ 30dB (1kHz ~ 100kHz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90N06-4M4P-E3 | Vishay Siliconix | $0.93 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90n064m4pe3-datasheets-4852.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4.4mOhm | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 40 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 15ns | 8 ns | 36 ns | 90A | 20V | SILICON | 3.75W Ta 300W Tc | 240A | 245 mJ | 60V | N-Channel | 6190pF @ 30V | 4.4m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 160nC @ 10V | 10V | ±20V |
