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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Driver Number of Bits | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUD50N04-16P-E3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0416pe3-datasheets-3262.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 1.437803g | EAR99 | e3 | MATTE TIN OVER NICKEL | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 3.1W | 1 | Not Qualified | R-PSSO-G2 | 19 ns | 120ns | 36 ns | 40 ns | 9.8A | 16V | SILICON | DRAIN | SWITCHING | 3.1W Ta 35.7W Tc | 50A | 20 mJ | 40V | N-Channel | 1655pF @ 20V | 16m Ω @ 15A, 10V | 2.2V @ 250μA | 9.8A Ta 20A Tc | 60nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf9530spbf-datasheets-9674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 300mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 52ns | 39 ns | 31 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 100V | 4V | 3.7W Ta 88W Tc | 48A | 400 mJ | P-Channel | 860pF @ 25V | -4 V | 300m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP28N15-52-E3 | Vishay Siliconix | $9.68 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup28n1552e3-datasheets-3301.pdf | TO-220-3 | 3 | No | Single | 3.75W | 1 | TO-220AB | 1.725nF | 15 ns | 70ns | 60 ns | 25 ns | 28A | 20V | 150V | 3.75W Ta 120W Tc | 52mOhm | 150V | N-Channel | 1725pF @ 25V | 52mOhm @ 5A, 10V | 4.5V @ 250μA | 28A Tc | 40nC @ 10V | 52 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB60EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqjb60ept1ge3-datasheets-4698.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | No SVHC | 6 | EAR99 | unknown | YES | 48W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 30A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 84A | 0.012Ohm | 2 N-Channel (Dual) | 1600pF @ 25V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP45N03-13L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup45n0313le3-datasheets-3378.pdf | TO-220-3 | Unknown | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 88W | 1 | FET General Purpose Power | 11 ns | 9ns | 11 ns | 38 ns | 45A | 10V | 88W Tc | 30V | N-Channel | 2730pF @ 25V | 3 V | 13m Ω @ 45A, 10V | 3V @ 250μA | 45A Tc | 70nC @ 10V | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7923DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7923dnt1e3-datasheets-1593.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7923 | 8 | 2 | Dual | 40 | 2 | Other Transistors | S-XDSO-C6 | 10 ns | 12ns | 28 ns | 38 ns | 6.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 4.3A | 0.047Ohm | -30V | 2 P-Channel (Dual) | 47m Ω @ 6.4A, 10V | 3V @ 250μA | 4.3A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N15-18P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n1518pe3-datasheets-3967.pdf | TO-220-3 | Lead Free | 3 | No SVHC | 18mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | FET General Purpose Power | 15 ns | 10ns | 8 ns | 25 ns | 90A | 20V | 150V | SILICON | DRAIN | SWITCHING | 2.5V | 3.75W Ta 375W Tc | TO-220AB | N-Channel | 4180pF @ 75V | 18m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA918EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia918edjt1ge3-datasheets-6820.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 7.8W | 2 N-Channel (Dual) | 58m Ω @ 3A, 4.5V | 900mV @ 250μA | 4.5A Tc | 5.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR642DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir462dpt1ge3-datasheets-7448.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | 5 | 51 Weeks | 506.605978mg | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 5.4W | 1 | R-PDSO-C5 | 30 ns | 105ns | 12 ns | 38 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4.8W Ta 41.7W Tc | 0.0024Ohm | 40V | N-Channel | 4155pF @ 20V | 2.4m Ω @ 15A, 10V | 2.3V @ 250μA | 60A Tc | 84nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5442DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5442dut1ge3-datasheets-8289.pdf | PowerPAK® ChipFET™ Single | 900μm | Lead Free | 14 Weeks | 8 | yes | EAR99 | No | C14-0630-ChipFET-Single | Pure Matte Tin (Sn) | 260 | 1 | Single | 30 | 3.1W | FET General Purpose Powers | 150°C | 10 ns | 15ns | 10 ns | 30 ns | 12.4A | 8V | 3.1W Ta 31W Tc | 25A | 20V | N-Channel | 1700pF @ 10V | 10m Ω @ 8A, 4.5V | 900mV @ 250μA | 25A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4401DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4401dyt1ge3-datasheets-6298.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 506.605978mg | No SVHC | 15.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 17 ns | 18ns | 55 ns | 122 ns | -10.5A | 20V | SILICON | 40V | 40V | -1V | 1.5W Ta | P-Channel | -1 V | 15.5m Ω @ 10.5A, 10V | 1V @ 250μA (Min) | 8.7A Ta | 50nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS27DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siss27dnt1ge3-datasheets-9758.pdf | PowerPAK® 1212-8S | 830μm | 5 | 14 Weeks | 8 | EAR99 | No | DUAL | 1 | Single | 4.8W | 1 | 150°C | S-PDSO-N5 | 16 ns | 45ns | 20 ns | 65 ns | -23A | 20V | SILICON | DRAIN | SWITCHING | 30V | 4.8W Ta 57W Tc | 50A | 200A | 0.0056Ohm | -30V | P-Channel | 5250pF @ 15V | 5.6m Ω @ 15A, 10V | 2.2V @ 250μA | 50A Tc | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5411EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5411edut1ge3-datasheets-8742.pdf | PowerPAK® ChipFET™ Single | Lead Free | 19 Weeks | EAR99 | Pure Matte Tin (Sn) | 260 | 1 | Single | 30 | 30 ns | 30ns | 35 ns | 70 ns | 25A | 8V | 12V | 3.1W Ta 31W Tc | -12V | P-Channel | 4100pF @ 6V | 8.2m Ω @ 6A, 4.5V | 900mV @ 250μA | 25A Tc | 105nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7115dnt1ge3-datasheets-0397.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 295mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 11 ns | 28ns | 35 ns | 52 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 150V | -2V | 3.7W Ta 52W Tc | -150V | P-Channel | 1190pF @ 50V | -2 V | 295m Ω @ 4A, 10V | 4V @ 250μA | 8.9A Tc | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Contains Lead | 3 | 26 Weeks | 4Ohm | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Lead, Tin | No | BOTTOM | WIRE | 2 | 1 | Single | 725mW | 1 | FET General Purpose Powers | 860mA | 20V | SILICON | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7164DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7164dpt1ge3-datasheets-1812.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 6.25mOhm | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 23 ns | 11ns | 11 ns | 40 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 6.25W Ta 104W Tc | 23.5A | 60V | N-Channel | 2830pF @ 30V | 2.5 V | 6.25m Ω @ 10A, 10V | 4.5V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06AP-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0306ape3-datasheets-0471.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | TO-252 | 3.8nF | 90A | 30V | 10W Ta 83W Tc | 5.7MOhm | N-Channel | 3800pF @ 15V | 5.7mOhm @ 20A, 10V | 2.4V @ 250μA | 90A Tc | 95nC @ 10V | 5.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS476DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-sis476dnt1ge3-datasheets-4409.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 14 Weeks | Unknown | 2.5mOhm | 8 | EAR99 | No | 1 | Single | 3.7W | 24 ns | 16 ns | 30 ns | 40A | 20V | 1V | 3.7W Ta 52W Tc | 30V | N-Channel | 3595pF @ 15V | 2.5m Ω @ 15A, 10V | 2.3V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-GE3 | Vishay Siliconix | $1.00 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | Lead Free | 15 Weeks | 3 | yes | EAR99 | Tin | No | 260 | 30 | 3.1W | 1 | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | Single | 60V | 3.1W Ta 104.2W Tc | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4100DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4100dyt1e3-datasheets-6999.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 10 ns | 15 ns | 4.4A | 20V | SILICON | SWITCHING | 100V | 2.5W Ta 6W Tc | 20A | 0.063Ohm | N-Channel | 600pF @ 50V | 63m Ω @ 4.4A, 10V | 4.5V @ 250μA | 6.8A Tc | 20nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR788DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir788dpt1ge3-datasheets-8652.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 15 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | FET General Purpose Powers | R-PDSO-C5 | 21 ns | 11ns | 9 ns | 29 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 48W Tc | 0.0034Ohm | 30V | N-Channel | 2873pF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 75nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7139DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7139dpt1ge3-datasheets-7945.pdf | PowerPAK® SO-8 | 1.17mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 5.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 17 ns | 56 ns | -22.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.2V | 5W Ta 48W Tc | 40A | 70A | 45 mJ | -30V | P-Channel | 4230pF @ 15V | 5.5m Ω @ 15A, 10V | 2.5V @ 250μA | 40A Tc | 146nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44STRRPBF | Vishay Siliconix | $2.79 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 1.437803g | 8 | yes | EAR99 | No | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | R-PSSO-G2 | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | SILICON | SWITCHING | 3.7W Ta 150W Tc | 200A | 60V | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7454DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7454dpt1e3-datasheets-8932.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 34mOhm | 8 | yes | EAR99 | Tin | No | 5A | e3 | 100V | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 10ns | 10 ns | 35 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 100V | N-Channel | 4 V | 34m Ω @ 7.8A, 10V | 4V @ 250μA | 5A Ta | 30nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4410BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4410bdyt1e3-datasheets-9808.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 12 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.4W | 1 | FET General Purpose Powers | 10 ns | 10ns | 15 ns | 40 ns | 10A | 20V | SILICON | SWITCHING | 1V | 1.4W Ta | 7.5A | 30V | N-Channel | 13.5m Ω @ 10A, 10V | 3V @ 250μA | 7.5A Ta | 20nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA456DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sia456djt1ge3-datasheets-1859.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 1.38Ohm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 6 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C3 | 5 ns | 20ns | 12 ns | 16 ns | 2.6A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.4V | 3.5W Ta 19W Tc | 2A | 200V | N-Channel | 350pF @ 100V | 1.4 V | 1.38 Ω @ 750mA, 4.5V | 1.4V @ 250μA | 2.6A Tc | 14.5nC @ 10V | 1.8V 4.5V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS496EDNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/vishaysiliconix-sis496edntt1ge3-datasheets-3696.pdf | PowerPAK® 1212-8 | 5 | 13 Weeks | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 52W Tc | 50A | 200A | 0.0048Ohm | 31 mJ | N-Channel | 1515pF @ 15V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7810DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7810dnt1e3-datasheets-3656.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 62mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 15ns | 15 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 20A | 100V | N-Channel | 4.5 V | 62m Ω @ 5.4A, 10V | 4.5V @ 250μA | 3.4A Ta | 17nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP4282ADNP3-T1GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOS | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip4282adnp3t1ge4-datasheets-7143.pdf | 4-UFDFN Exposed Pad | 4 | 16 Weeks | 50.008559mg | 520mOhm | 4 | On/Off | yes | EAR99 | unknown | Load Discharge, Slew Rate Controlled | Palladium/Gold (Pd/Au) - with Nickel (Ni) barrier | 324mW | DUAL | NO LEAD | 260 | 0.5mm | 4 | 30 | 324mW | Peripheral Drivers | 2/5V | Not Qualified | 1.4A | 1.2A | P-Channel | 1.5V~5.5V | 20 μs | 4 μs | 1 | General Purpose | High Side | 1 | Not Required | 350m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2333DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2333ddst1ge3-datasheets-6195.pdf&product=vishaysiliconix-si2333ddst1ge3-6385947 | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.2W | 1 | Other Transistors | 150°C | 26 ns | 24ns | 20 ns | 45 ns | -5A | 8V | SILICON | SWITCHING | 12V | -1V | 1.2W Ta 1.7W Tc | 6A | 0.028Ohm | -12V | P-Channel | 1275pF @ 6V | 28m Ω @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 35nC @ 8V | 1.5V 4.5V | ±8V |
