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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDMS86520L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86520l-datasheets-6663.pdf | 8-PowerTDFN | 5mm | 1.1mm | 6mm | Lead Free | 5 | 5 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 1 | Single | 2.5W | 1 | FET General Purpose Power | 150°C | R-PDSO-F5 | 15 ns | 5.6ns | 3.4 ns | 32 ns | 13.5A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.5W Ta 69W Tc | MO-240AA | 22A | 60A | 60V | N-Channel | 4615pF @ 30V | 1.8 V | 8.2m Ω @ 13.5A, 10V | 3V @ 250μA | 13.5A Ta 22A Tc | 63nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| FQA10N80C-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa10n80cf109-datasheets-6791.pdf | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 16 hours ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 240W | 1 | FET General Purpose Power | Not Qualified | 50 ns | 130ns | 80 ns | 90 ns | 10A | 30V | SILICON | SWITCHING | 5V | 240W Tc | 40A | 920 mJ | 800V | N-Channel | 2800pF @ 25V | 1.1 Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STW33N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp33n60dm2-datasheets-1270.pdf | TO-247-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STW33N | NOT SPECIFIED | 24A | 600V | 4V | 190W Tc | N-Channel | 1870pF @ 100V | 130m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 43nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA20N50-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fda20n50f109-datasheets-6817.pdf | TO-3P-3, SC-65-3 | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | FAST SWITCHING | No | Single | 280W | 1 | FET General Purpose Power | 95 ns | 375ns | 105 ns | 100 ns | 22A | 30V | SILICON | SWITCHING | 280W Tc | 88A | 500V | N-Channel | 3120pF @ 25V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 59.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FCP16N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fcp16n60n-datasheets-6848.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 12 Weeks | 1.8g | No SVHC | 199mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 134.4W | 1 | FET General Purpose Power | Not Qualified | 15.8 ns | 15.5ns | 20.2 ns | 60.3 ns | 16A | 30V | SILICON | SWITCHING | 2V | 134.4W Tc | TO-220AB | 48A | 600V | N-Channel | 2170pF @ 100V | 2 V | 199m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 52.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SIS888DN-T1-GE3 | Vishay Siliconix | $25.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis888dnt1ge3-datasheets-6842.pdf | PowerPAK® 1212-8S | Lead Free | 14 Weeks | 8 | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | 12 ns | 8ns | 8 ns | 13 ns | 5.3A | 20V | 150V | 52W Tc | N-Channel | 420pF @ 75V | 58m Ω @ 10A, 10V | 4.2V @ 250μA | 20.2A Tc | 14.5nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF50PBF | Vishay Siliconix | $4.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf50pbf-datasheets-6872.pdf | 900V | 6.7A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.6Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.9nF | 20 ns | 34ns | 37 ns | 130 ns | 6.7A | 20V | 900V | 4V | 190W Tc | 920 ns | 1.6Ohm | 900V | N-Channel | 2900pF @ 25V | 2 V | 1.6Ohm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 200nC @ 10V | 1.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| RSS070N05FRATB | ROHM Semiconductor | $6.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | 2W Ta | 7A | 28A | 0.035Ohm | N-Channel | 1000pF @ 10V | 25m Ω @ 7A, 10V | 2.5V @ 1mA | 7A Ta | 16.8nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU3N40TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdu3n40tu-datasheets-6889.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.8mm | 7.57mm | 2.5mm | Lead Free | 3 | 4 Weeks | 343.08mg | 3.4Ohm | 3 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | FAST SWITCHING | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 30W | 1 | FET General Purpose Power | Not Qualified | 10 ns | 30ns | 25 ns | 10 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 30W Tc | 2A | 8A | 46 mJ | 400V | N-Channel | 225pF @ 25V | 3.4 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STF12NM50ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 Full Pack | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF12 | 3 | 25W | 1 | FET General Purpose Power | 12 ns | 15ns | 17 ns | 40 ns | 11A | 25V | SILICON | SINGLE | ISOLATED | SWITCHING | 500V | 500V | 25W Tc | TO-220AB | 44A | N-Channel | 850pF @ 50V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4136DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4136dyt1ge3-datasheets-6827.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 40 | 3.5W | 1 | 34 ns | 26ns | 23 ns | 50 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 3.5W Ta 7.8W Tc | 0.0026Ohm | 20V | N-Channel | 4560pF @ 10V | 2m Ω @ 15A, 10V | 2.2V @ 250μA | 46A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STF20NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp20nk50z-datasheets-1509.pdf | TO-220-3 Full Pack | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF20 | 3 | Single | 40W | 1 | FET General Purpose Power | 28 ns | 20ns | 15 ns | 70 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 68A | 0.27Ohm | 850 mJ | 500V | N-Channel | 2600pF @ 25V | 270m Ω @ 8.5A, 10V | 4.5V @ 100μA | 17A Tc | 119nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STFI20NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-262-3 Full Pack, I2Pak | 3 | 3 | EAR99 | No | SINGLE | STFI20N | 3 | 40W | 1 | 28 ns | 20ns | 15 ns | 70 ns | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40W Tc | 68A | 0.27Ohm | 850 mJ | 500V | N-Channel | 2600pF @ 25V | 270m Ω @ 8.5A, 10V | 4.5V @ 100μA | 17A Tc | 119nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STF32NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf32nm50n-datasheets-6674.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF32N | Single | 35W | 1 | FET General Purpose Power | 21.5 ns | 9.5ns | 23.6 ns | 110 ns | 22A | 25V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 88A | 500V | N-Channel | 1973pF @ 50V | 130m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| TK090N65Z,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSVI | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 16 Weeks | 650V | 230W Tc | N-Channel | 2780pF @ 300V | 90m Ω @ 15A, 10V | 4V @ 1.27mA | 30A Ta | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI26NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti26nm60n-datasheets-6687.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | 3 | EAR99 | STI26N | 3 | Single | 1 | 13 ns | 85 ns | 20A | 25V | SILICON | SWITCHING | 600V | 600V | 140W Tc | 80A | 0.165Ohm | 610 mJ | N-Channel | 1800pF @ 50V | 165m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 60nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N65E-GE3 | Vishay Siliconix | $2.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp24n65ege3-datasheets-6695.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 18 Weeks | 6.000006g | Unknown | 145mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | TO-220AB | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPD30N06S2L13ATMA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n06s2l13atma4-datasheets-6703.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 30A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 200A | 0.017Ohm | 240 mJ | N-Channel | 1800pF @ 25V | 13m Ω @ 30A, 10V | 2V @ 80μA | 30A Tc | 69nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHG120N60E-GE3 | Vishay Siliconix | $3.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg120n60ege3-datasheets-6710.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRH100P03GZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/rohm-rrh100p03gzetb-datasheets-8146.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 3.9mm | 20 Weeks | 850.995985mg | 8 | 1 | 25 ns | 60ns | 100 ns | 150 ns | 10A | 20V | 30V | 650mW Ta | -30V | P-Channel | 3600pF @ 10V | 12.6m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 68nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4833NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmfs4833nt1g-datasheets-4674.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 5 | Single | 40 | 2.35W | 1 | FET General Purpose Power | 25 ns | 34ns | 17 ns | 35 ns | 191A | 20V | SILICON | DRAIN | SWITCHING | 910mW Ta 125W Tc | 288A | 0.003Ohm | 30V | N-Channel | 5600pF @ 12V | 1.5 V | 2m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 156A Tc | 88nC @ 11.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| STP17N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf17n62k3-datasheets-6631.pdf | TO-220-3 | Lead Free | 3 | 280mOhm | yes | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) | STP17N | 3 | Single | 190W | 1 | FET General Purpose Power | R-PSFM-T3 | 22 ns | 26ns | 63 ns | 91 ns | 15.5A | 30V | SILICON | SWITCHING | 190W Tc | TO-220AB | 60A | 620V | N-Channel | 2500pF @ 50V | 380m Ω @ 7.5A, 10V | 4.5V @ 100μA | 15.5A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDMC86324 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fdmc86324-datasheets-6735.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | 5 | 5 Weeks | 32.13mg | No SVHC | 8 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium (Ni/Pd) | DUAL | Single | 41W | 1 | FET General Purpose Power | S-PDSO-N5 | 8 ns | 4ns | 4 ns | 14 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 3.1V | 2.3W Ta 41W Tc | MO-240BA | 7A | 30A | 0.023Ohm | 72 mJ | 80V | N-Channel | 965pF @ 50V | 23m Ω @ 7A, 10V | 4V @ 250μA | 7A Ta 20A Tc | 18nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| STFI34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi34n65m5-datasheets-6745.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.85mm | 4.6mm | Lead Free | 3 | EAR99 | No | STFI34N | Single | 34.7W | 59 ns | 8.7ns | 7.5 ns | 12 ns | 28A | 25V | 35W Tc | 650V | N-Channel | 2700pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 62.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD7S60 | Alpha & Omega Semiconductor Inc. | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 7A | 600V | 83W Tc | N-Channel | 372pF @ 100V | 600m Ω @ 3.5A, 10V | 3.9V @ 250μA | 7A Tc | 8.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB180N60E-GE3 | Vishay Siliconix | $1.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb180n60ege3-datasheets-6754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH21N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh21n60et1ge3-datasheets-5421.pdf | 8-PowerTDFN | Lead Free | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 104W Tc | 0.176Ohm | 226 mJ | N-Channel | 2015pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 83nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP095N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp095n65s3hf-datasheets-6768.pdf | TO-220-3 | 12 Weeks | yes | e3 | Tin (Sn) | 650V | 272W Tc | N-Channel | 2930pF @ 400V | 95m Ω @ 18A, 10V | 5V @ 860μA | 36A Tc | 66nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVHL110N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® III, FRFET® | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/onsemiconductor-nvhl110n65s3f-datasheets-6658.pdf | TO-247-3 | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 240W Tc | N-Channel | 2560pF @ 400V | 110m Ω @ 15A, 10V | 5V @ 3mA | 30A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI20NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-262-3 Full Pack, I2Pak | 2.240009g | 250mOhm | EAR99 | NOT SPECIFIED | STFI20N | 1 | Single | NOT SPECIFIED | 15 ns | 13.5ns | 21 ns | 75 ns | 15A | 25V | 650V | 30W Tc | 710V | N-Channel | 1280pF @ 50V | 270m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 44nC @ 10V | 10V | ±25V |
