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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTD6415AN-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd6415an1g-datasheets-5039.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 55MOhm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 83W | 1 | R-PSIP-T3 | 10 ns | 37ns | 37 ns | 30 ns | 23A | 20V | SILICON | DRAIN | 83W Tc | 89A | 79 mJ | 100V | N-Channel | 700pF @ 25V | 55m Ω @ 23A, 10V | 4V @ 250μA | 23A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD031N03M G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd031n03lgatma1-datasheets-9693.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 30V | N-Channel | 5300pF @ 15V | 3.1mOhm @ 30A, 10V | 2.2V @ 250μA | 90A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB6411ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntb6411ang-datasheets-4990.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 4.535924g | Unknown | 14MOhm | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | 3 | Single | 217W | 1 | FET General Purpose Powers | R-PSSO-G2 | 16 ns | 144ns | 157 ns | 107 ns | 72A | 20V | SILICON | DRAIN | 4V | 217W Tc | 77A | 285A | 470 mJ | 100V | N-Channel | 3700pF @ 25V | 14m Ω @ 72A, 10V | 4V @ 250μA | 77A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NDD04N60Z-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndf04n60zg-datasheets-9348.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.35mm | 2.38mm | Lead Free | 3 | 19 Weeks | 2Ohm | 4 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | NO | 4 | Single | 83W | 1 | FET General Purpose Powers | R-PSIP-T3 | 13 ns | 9ns | 15 ns | 24 ns | 4.1A | 30V | SILICON | DRAIN | 83W Tc | 2.6A | 20A | 600V | N-Channel | 640pF @ 25V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4.1A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SSM6J53FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6j53fete85lf-datasheets-4832.pdf | SOT-563, SOT-666 | unknown | 500mW | 1.8A | 8V | 500mW Ta | 20V | P-Channel | 568pF @ 10V | 136m Ω @ 1A, 2.5V | 1V @ 1mA | 1.8A Ta | 10.6nC @ 4V | 1.5V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD214SN L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsd214snl6327-datasheets-4775.pdf | 6-VSSOP, SC-88, SOT-363 | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMAIBLE | compliant | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 6 | 40 | 1 | FET General Purpose Power | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 500mW Ta | 1.5A | 0.14Ohm | 9 pF | N-Channel | 143pF @ 10V | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 1.5A Ta | 0.8nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600C6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r600c6atma1-datasheets-6539.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 63W Tc | 7.3A | 19A | 0.6Ohm | 133 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SSM5H12TU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD (5 Leads), Flat Lead | unknown | 1.9A | 30V | 500mW Ta | N-Channel | 123pF @ 15V | 133m Ω @ 1A, 4V | 1V @ 1mA | 1.9A Ta | 1.9nC @ 4V | Schottky Diode (Isolated) | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC130P03LSGAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc130p03lsgauma1-datasheets-4855.pdf | 8-PowerVDFN | Contains Lead | 5 | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 11.4 ns | 65.6ns | 35.1 ns | 43.5 ns | 12A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 2.5W Ta 69W Tc | 90A | P-Channel | 3670pF @ 15V | 13m Ω @ 22.5A, 10V | 2.2V @ 150μA | 12A Ta 22.5A Tc | 73.1nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IPD60R380C6 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r380c6atma1-datasheets-9304.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | yes | HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 10.6A | 30A | 0.38Ohm | 210 mJ | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSL302SNL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl302snl6327htsa1-datasheets-4788.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | No | PG-TSOP-6-6 | 750pF | 6.4 ns | 2.8ns | 1.9 ns | 13.7 ns | 7.1A | 20V | 30V | 2W Ta | N-Channel | 750pF @ 15V | 25mOhm @ 7.1A, 10V | 2V @ 30μA | 7.1A Ta | 6.6nC @ 5V | 25 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R950C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r950c6xksa1-datasheets-4928.pdf | TO-220-3 | 3 | yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 37W Tc | TO-220AB | 4.4A | 12A | 0.95Ohm | 46 mJ | N-Channel | 280pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSO080P03SNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso080p03sntma1-datasheets-4810.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | DUAL | GULL WING | 1 | 12.6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.79W Ta | 1500 pF | P-Channel | 5890pF @ 25V | 8m Ω @ 14.9A, 10V | 2.2V @ 250μA | 12.6A Ta | 136nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K316T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k316tte85lf-datasheets-4842.pdf | TO-236-3, SC-59, SOT-23-3 | FET General Purpose Power | 4A | Single | 30V | 700mW Ta | 4A | N-Channel | 270pF @ 10V | 53m Ω @ 3A, 10V | 1V @ 1mA | 4A Ta | 4.3nC @ 4V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R950C6 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r950c6atma1-datasheets-3809.pdf&product=infineontechnologies-ipd60r950c6-6867008 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 37W Tc | 4.4A | 12A | 0.95Ohm | 46 mJ | N-Channel | 280pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSO220N03MSGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bso220n03msgxuma1-datasheets-4905.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1.56W | 1 | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.56W Ta | 0.022Ohm | N-Channel | 800pF @ 15V | 22m Ω @ 8.6A, 10V | 2.1V @ 250μA | 7A Ta | 10.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K315T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | FET General Purpose Power | 6A | Single | 30V | 700mW Ta | 6A | N-Channel | 450pF @ 15V | 27.6m Ω @ 4A, 10V | 2.5V @ 1mA | 6A Ta | 10.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | $12.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg4712sss13-datasheets-1643.pdf | 8-SOIC (0.154, 3.90mm Width) | 7 Weeks | 73.992255mg | No SVHC | 8 | No | 1 | 8-SOP | 2.296nF | 5.5 ns | 24.4ns | 6.6 ns | 33.1 ns | 11.2A | 12V | 30V | 1.55W Ta | 10mOhm | 30V | N-Channel | 2296pF @ 15V | 14mOhm @ 11.2A, 10V | 2.2V @ 250μA | 11.2A Ta | 45.7nC @ 10V | Schottky Diode (Body) | 14 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K7002BSU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k7002bsulf-datasheets-4802.pdf | SC-70, SOT-323 | USM | 17pF | 200mA | 60V | 150mW Ta | N-Channel | 17pF @ 25V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250μA | 200mA Ta | 2.1 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL202SNL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl202snl6327htsa1-datasheets-4588.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | No | DUAL | GULL WING | 6 | 1 | 8.26 ns | 27.5ns | 4.06 ns | 18.9 ns | 7.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 2W Ta | 0.022Ohm | N-Channel | 1147pF @ 10V | 22m Ω @ 7.5A, 4.5V | 1.2V @ 30μA | 7.5A Ta | 8.7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPB70N04S3-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 3 | yes | EAR99 | ULTRA LOW RESISTANCE | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 13 ns | 8ns | 7 ns | 17 ns | 80A | 20V | 40V | SILICON | DRAIN | 79W Tc | 70A | 0.0071Ohm | 145 mJ | 40V | N-Channel | 2700pF @ 25V | 6.2m Ω @ 70A, 10V | 4V @ 50μA | 80A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSS315PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss315pl6327htsa1-datasheets-4693.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 282pF | 1.5A | 30V | 500mW Ta | P-Channel | 282pF @ 15V | 150mOhm @ 1.5A, 10V | 2V @ 11μA | 1.5A Ta | 2.3nC @ 5V | 150 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS215PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss215pl6327htsa1-datasheets-4656.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 346pF | 1.5A | 20V | 500mW Ta | P-Channel | 346pF @ 15V | 150mOhm @ 1.5A, 4.5V | 1.2V @ 11μA | 1.5A Ta | 3.6nC @ 4.5V | 150 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD200N15N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-ipd200n15n3gatma1-datasheets-1401.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | 50A | 200A | 0.02Ohm | 170 mJ | N-Channel | 1820pF @ 75V | 20m Ω @ 50A, 10V | 4V @ 90μA | 50A Tc | 31nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM3J321T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | No | 5.2A | 8V | 20V | 700mW Ta | P-Channel | 640pF @ 10V | 46m Ω @ 3A, 4.5V | 1V @ 1mA | 5.2A Ta | 8.1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N04S3-02 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp120n04s302aksa1-datasheets-0279.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 300W Tc | 120A | 480A | 0.0023Ohm | 1880 mJ | N-Channel | 14300pF @ 25V | 2m Ω @ 80A, 10V | 4V @ 230μA | 120A Tc | 210nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SSM6J409TU(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD, Flat Leads | 6 | No | Other Transistors | 9.5A | 8V | Single | 20V | 1W Ta | P-Channel | 1100pF @ 10V | 22.1m Ω @ 3A, 4.5V | 1V @ 1mA | 9.5A Ta | 15nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD12N10-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd12n10t4-datasheets-6380.pdf | 100V | 12A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 56.6W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30ns | 32 ns | 22 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.28W Ta 56.6W Tc | 36A | 75 mJ | 100V | N-Channel | 550pF @ 25V | 165m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM4K27CTTPL3 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 4-SMD, No Lead | 4 | unknown | 1 | Single | 400mW | FET General Purpose Power | 10 ns | 12 ns | 500mA | 12V | 400mW Ta | 0.5A | 20V | N-Channel | 174pF @ 10V | 205m Ω @ 250mA, 4V | 1.1V @ 1mA | 500mA Ta | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J51TUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD, Flat Leads | 12V | 500mW Ta | P-Channel | 1700pF @ 10V | 54m Ω @ 2A, 2.5V | 1V @ 1mA | 4A Ta |
