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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR9024TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 13 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 68ns | 29 ns | 15 ns | -8.8A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.5W Ta 42W Tc | 0.28Ohm | -60V | P-Channel | 570pF @ 25V | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF3205STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf3205strlpbf-datasheets-3553.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-252 | 75A | 390A | 0.008Ohm | 264 mJ | N-Channel | 3247pF @ 25V | 8m Ω @ 62A, 10V | 4V @ 250μA | 110A Tc | 146nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMFD4C50NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-PowerTDFN | 2 Weeks | 540.001716mg | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK80S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage | $2.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 4.34nF | 13 ns | 28ns | 80 ns | 20 ns | 80A | 20V | 40V | 100W Tc | N-Channel | 4340pF @ 10V | 3.1mOhm @ 40A, 10V | 3V @ 1mA | 80A Ta | 87nC @ 10V | 3.1 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB254L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 32A | 150V | 2.1W Ta 125W Tc | N-Channel | 2150pF @ 75V | 46m Ω @ 20A, 10V | 2.7V @ 250μA | 4.2A Ta 32A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI530N15N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi530n15n3gxksa1-datasheets-3580.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | Lead Free | 3 | 52 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 9 ns | 133 ns | 21A | 20V | 150V | SILICON | SWITCHING | 68W Tc | 84A | 60 mJ | 150V | N-Channel | 887pF @ 75V | 53m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTY1N80P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 800V | 42W Tc | N-Channel | 250pF @ 25V | 14 Ω @ 500mA, 10V | 4V @ 50μA | 1A Tc | 9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA12N50E-E3 | Vishay Siliconix | $1.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha12n50ee3-datasheets-3585.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 6.000006g | Unknown | 330mOhm | 3 | TO-220 Full Pack | 886pF | 10.5A | 500V | 4V | 32W Tc | 380mOhm | 550V | N-Channel | 886pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 10.5A Tc | 50nC @ 10V | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMYS1D2N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys1d2n04cltwg-datasheets-3592.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 134W Tc | N-Channel | 6330pF @ 20V | 1.2m Ω @ 50A, 10V | 2V @ 180μA | 44A Ta 258A Tc | 109nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6P60W,RVQ | Toshiba Semiconductor and Storage | $6.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | Single | 60W | 1 | 18ns | 7 ns | 55 ns | 6.2A | 30V | 60W Tc | 600V | N-Channel | 390pF @ 300V | 820m Ω @ 3.1A, 10V | 3.7V @ 310μA | 6.2A Ta | 12nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK763R1-40B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk763r140b118-datasheets-9433.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 38 ns | 82ns | 90 ns | 141 ns | 75A | 20V | 40V | SILICON | DRAIN | SWITCHING | 300W Tc | 902A | 1600 mJ | 40V | N-Channel | 6808pF @ 25V | 3.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMC007N08LC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdmc007n08lc-datasheets-3599.pdf | 8-PowerWDFN | 20 Weeks | 152.7mg | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 57W Tc | N-Channel | 2940pF @ 40V | 7m Ω @ 21A, 10V | 2.5V @ 120μA | 66A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR802DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir802dpt1ge3-datasheets-3524.pdf | PowerPAK® SO-8 | Lead Free | 5 | 13 Weeks | 506.605978mg | Unknown | 5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.6W | 1 | FET General Purpose Powers | R-PDSO-C5 | 19 ns | 14ns | 13 ns | 36 ns | 30A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600mV | 4.6W Ta 27.7W Tc | 70A | 20 mJ | 20V | N-Channel | 1785pF @ 10V | 5m Ω @ 10A, 10V | 1.5V @ 250μA | 30A Tc | 32nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||
| DMTH41M8SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth41m8spsq13-datasheets-3549.pdf | 8-PowerTDFN | 19 Weeks | not_compliant | e3 | Matte Tin (Sn) | 260 | 30 | 40V | 3.03W | N-Channel | 6968pF @ 20V | 1.8m Ω @ 30A, 10V | 4V @ 250μA | 100A Tc | 79.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6797MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf6797mtrpbf-datasheets-3607.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | 3 | 12 Weeks | 7 | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 22 ns | 32ns | 15 ns | 20 ns | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 300A | 260 mJ | 25V | N-Channel | 5790pF @ 13V | 1.4m Ω @ 38A, 10V | 2.35V @ 150μA | 36A Ta 210A Tc | 68nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NVMFS5C426NWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c426naft1g-datasheets-6596.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.8W Ta 128W Tc | N-Channel | 4300pF @ 25V | 1.3m Ω @ 50A, 10V | 3.5V @ 250μA | 41A Ta 235A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF1300N80ZYD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcpf1300n80z-datasheets-4545.pdf | TO-220-3 Full Pack, Formed Leads | 10.36mm | 16.07mm | 4.9mm | 15 Weeks | 0g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 24W | FET General Purpose Power | 14 ns | 8.3ns | 6 ns | 33 ns | 4A | 20V | 800V | 24W Tc | 4A | N-Channel | 880pF @ 100V | 1.3 Ω @ 2A, 10V | 4.5V @ 400μA | 4A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVMFS4C01NWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfs4c01nt1g-datasheets-9181.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | FET General Purpose Power | R-PDSO-F5 | 319A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.84W Ta 161W Tc | 900A | 0.00095Ohm | N-Channel | 10144pF @ 15V | 0.9m Ω @ 30A, 10V | 2.2V @ 250μA | 49A Ta 319A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR9020TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 280MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 42W | 1 | R-PSSO-G2 | 8.2 ns | 67ns | 25 ns | 12 ns | -9.9A | 20V | SILICON | DRAIN | SWITCHING | 50V | 50V | 42W Tc | 40A | 250 mJ | P-Channel | 490pF @ 25V | 280m Ω @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| FCP600N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcp600n65s3r0-datasheets-3473.pdf | TO-220-3 | 12 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | 650V | 54W Tc | N-Channel | 465pF @ 400V | 600m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ14STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfz14spbf-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | D2PAK | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | 60V | 3.7W Ta 43W Tc | N-Channel | 300pF @ 25V | 200mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7P60W,RVQ | Toshiba Semiconductor and Storage | $1.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | Single | 60W | 18ns | 7 ns | 55 ns | 7A | 30V | 60W Tc | 600V | N-Channel | 490pF @ 300V | 600m Ω @ 3.5A, 10V | 3.7V @ 350μA | 7A Ta | 15nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB470L | Alpha & Omega Semiconductor Inc. | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob470l-datasheets-8026.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 3 | FET General Purpose Powers | 100A | Single | 75V | 2.1W Ta 268W Tc | N-Channel | 5640pF @ 30V | 10.2m Ω @ 30A, 10V | 4V @ 250μA | 10A Ta 100A Tc | 136nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6756 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 36A | 30V | 7.3W Ta 83W Tc | N-Channel | 2796pF @ 15V | 2.4m Ω @ 20A, 10V | 2.4V @ 250μA | 47A Ta 36A Tc | 64nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB70N10S3L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipp70n10s3l12aksa1-datasheets-8992.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 125W Tc | 70A | 280A | 0.012Ohm | 154 mJ | N-Channel | 5550pF @ 25V | 11.8m Ω @ 70A, 10V | 2.4V @ 83μA | 70A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOB288L | Alpha & Omega Semiconductor Inc. | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob288l-datasheets-8027.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 46A | 80V | 2.1W Ta 93.5W Tc | N-Channel | 1871pF @ 40V | 8.9m Ω @ 20A, 10V | 3.4V @ 250μA | 10.5A Ta 46A Tc | 38nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1010nstrlpbf-datasheets-9211.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 180W Tc | 75A | 290A | 0.011Ohm | 250 mJ | N-Channel | 3210pF @ 25V | 11m Ω @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TSM60N380CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n380cprog-datasheets-7214.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 19 Weeks | TO-251 (IPAK) | 600V | 125W Tc | N-Channel | 1040pF @ 100V | 380mOhm @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 20.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMYS2D2N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys2d2n06cltwg-datasheets-3446.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.9W Ta 134W Tc | N-Channel | 4850pF @ 25V | 1.9m Ω @ 50A, 10V | 2V @ 180μA | 31A Ta 185A Tc | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24SPBF | Vishay Siliconix | $7.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz24lpbf-datasheets-7621.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | GULL WING | 260 | 3 | 1 | Single | 40 | 3.7W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 60W Tc | N-Channel | 870pF @ 25V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V |
