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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLZ24SPBF | Vishay Siliconix | $7.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz24lpbf-datasheets-7621.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | GULL WING | 260 | 3 | 1 | Single | 40 | 3.7W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7W Ta 60W Tc | N-Channel | 870pF @ 25V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| FCPF250N65S3L1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcpf250n65s3l1-datasheets-3448.pdf | TO-220-3 Full Pack | 15 Weeks | 2.27g | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 31W Tc | N-Channel | 1010pF @ 400V | 250m Ω @ 6A, 10V | 4.5V @ 1.2mA | 12A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3636PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3636trpbf-datasheets-8735.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.223mm | 2.3876mm | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 143W | 1 | 45 ns | 216ns | 96 ns | 43 ns | 99A | 16V | SILICON | DRAIN | SWITCHING | 143W Tc | 60V | N-Channel | 3779pF @ 50V | 2.5 V | 6.8m Ω @ 50A, 10V | 2.5V @ 100μA | 50A Tc | 49nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPD90P04P405AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 2 | 26 Weeks | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | P-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 90A | 360A | 0.0047Ohm | 60 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R5-100PSFQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn8r5100psfq-datasheets-3461.pdf | TO-220-3 | 27 Weeks | 3 | 100V | 183W Ta | N-Channel | 3181pF @ 50V | 8.7m Ω @ 25A, 10V | 4V @ 1mA | 98A Ta | 44.5nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6688 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdu6688-datasheets-8124.pdf | 30V | 84A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 83W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 13ns | 36 ns | 62 ns | 84A | 20V | SILICON | DRAIN | SWITCHING | 83W Ta | 0.005Ohm | 30V | N-Channel | 3845pF @ 15V | 5m Ω @ 18A, 10V | 3V @ 250μA | 84A Ta | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB17N25S3100ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp17n25s3100aksa1-datasheets-9396.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.7mm | 9.25mm | Contains Lead | 14 Weeks | 3 | Halogen Free | 1 | Single | 107W | 1 | 175°C | PG-TO263-3-2 | 1.133nF | 4.4 ns | 3.7ns | 1.2 ns | 7.5 ns | 17A | 20V | 250V | 250V | 107W Tc | 85mOhm | 250V | N-Channel | 1500pF @ 25V | 100mOhm @ 17A, 10V | 4V @ 54μA | 17A Tc | 19nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| HUF76429S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-huf76429s3st-datasheets-3246.pdf | 60V | 44A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 22MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 47A | 60V | GULL WING | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 203ns | 74 ns | 30 ns | 47A | 16V | SILICON | DRAIN | SWITCHING | 110W Tc | 60V | N-Channel | 1480pF @ 25V | 22m Ω @ 47A, 10V | 3V @ 250μA | 47A Tc | 46nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| RJK5033DPD-00#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk5033dpd00j2-datasheets-3402.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | NOT SPECIFIED | 4 | NOT SPECIFIED | 6A | 500V | 65W Tc | N-Channel | 600pF @ 25V | 1.3 Ω @ 3A, 10V | 6A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S407AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s407atma2-datasheets-1177.pdf | TO-220-3 | 3 | 16 Weeks | 3 | yes | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15 ns | 3ns | 5 ns | 23 ns | 80A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 79W Tc | TO-220AB | 0.0071Ohm | 71 mJ | N-Channel | 4500pF @ 25V | 7.4m Ω @ 80A, 10V | 4V @ 40μA | 80A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R600E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r600e6xksa1-datasheets-3410.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 28W Tc | TO-220AB | 19A | 0.6Ohm | 133 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N100-TRL | IXYS | $2.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1 Weeks | 1000V | 25W Tc | N-Channel | 54pF @ 25V | 80 Ω @ 50mA, 10V | 4.5V @ 25μA | 100mA Tc | 6.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSJ300N10TL | ROHM Semiconductor | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.1mm | 4.5mm | 9mm | Lead Free | 2 | 83 | EAR99 | No | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 20 ns | 65ns | 180 ns | 130 ns | 30A | 20V | SILICON | SWITCHING | 100V | 50W Tc | 60A | 0.059Ohm | N-Channel | 2200pF @ 25V | 52m Ω @ 15A, 10V | 2.5V @ 1mA | 30A Ta | 50nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK46A08N1,S4X | Toshiba Semiconductor and Storage | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 30 ns | 11ns | 17 ns | 51 ns | 46A | 20V | 35W Tc | 80A | 80V | N-Channel | 2500pF @ 40V | 8.4m Ω @ 23A, 10V | 4V @ 500μA | 46A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA180N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa180n10n3gxksa1-datasheets-3428.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 30W | 1 | Not Qualified | 11 ns | 5ns | 3 ns | 18 ns | 28A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 59 mJ | N-Channel | 1800pF @ 50V | 18m Ω @ 28A, 10V | 3.5V @ 35μA | 28A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA60R600C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r600c6xksa1-datasheets-3433.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 28W Tc | TO-220AB | 7.3A | 19A | 0.6Ohm | 133 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| VN0300L-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn0300lg-datasheets-8737.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 640mA | 30V | SILICON | SWITCHING | 1W Tc | 0.64A | 50 pF | 30V | N-Channel | 190pF @ 20V | 1.2 Ω @ 1A, 10V | 2.5V @ 1mA | 640mA Tj | 5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR540ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfr540z-datasheets-9214.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 100V | 91W Tc | 35A | N-Channel | 1690pF @ 25V | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 35A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI180N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi180n10n3gxksa1-datasheets-3366.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 71W | 1 | Not Qualified | R-PSIP-T3 | 12 ns | 5 ns | 19 ns | 43A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 71W Tc | 50 mJ | N-Channel | 1800pF @ 50V | 18m Ω @ 33A, 10V | 3.5V @ 33μA | 43A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQPF9P25YDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqpf9p25ydtu-datasheets-3371.pdf | TO-220-3 Full Pack, Formed Leads | 6 Weeks | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 250V | 50W Tc | P-Channel | 1180pF @ 25V | 620m Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H009LH3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h009lh3-datasheets-3375.pdf | TO-251-3 Stub Leads, IPak | 14 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 96W Tc | N-Channel | 2309pF @ 50V | 9m Ω @ 20A, 10V | 2.5V @ 250μA | 84A Tc | 20.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD06N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd06n60c3atma1-datasheets-3281.pdf | 650V | 6.2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 8 Weeks | 3 | 74W | PG-TO252-3-1 | 620pF | 7 ns | 12ns | 10 ns | 52 ns | 6.2A | 20V | 600V | 600V | 74W Tc | 680mOhm | N-Channel | 620pF @ 25V | 750mOhm @ 3.9A, 10V | 3.9V @ 260μA | 6.2A Tc | 31nC @ 10V | 750 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6724MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf6724mtrpbf-datasheets-3286.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 11 ns | 19ns | 16 ns | 23 ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 212A | 12 mJ | 30V | N-Channel | 4404pF @ 15V | 2.5m Ω @ 27A, 10V | 2.35V @ 100μA | 27A Ta 150A Tc | 54nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AUIRFN8401TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfn8401tr-datasheets-3295.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | 11 Weeks | 8 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 6.1 ns | 13ns | 12 ns | 22 ns | 84A | 20V | 40V | 4.2W Ta 63W Tc | N-Channel | 2170pF @ 25V | 4.6m Ω @ 50A, 10V | 3.9V @ 50μA | 84A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT286L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aot286l-datasheets-7976.pdf | TO-220-3 | 18 Weeks | FET General Purpose Power | 70A | Single | 80V | 2.1W Ta 167W Tc | N-Channel | 3142pF @ 40V | 6m Ω @ 20A, 10V | 3.3V @ 250μA | 13A Ta 70A Tc | 63nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMJS1D2N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmjs1d2n04cltwg-datasheets-3315.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 128W Tc | N-Channel | 5600pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 170μA | 41A Ta 237A Tc | 93nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0604N3-G-P005 | Microchip Technology | $1.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0604n3g-datasheets-8697.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 6 Weeks | 453.59237mg | EAR99 | HIGH INPUT IMPEDANCE | BOTTOM | 1 | 1 | O-PBCY-T3 | 700mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 740mW Ta | 0.7A | 0.75Ohm | 50 pF | N-Channel | 190pF @ 20V | 750m Ω @ 1.5A, 10V | 1.6V @ 1mA | 700mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R660CFDAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r660cfdaatma1-datasheets-3328.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 9 ns | 8ns | 10 ns | 40 ns | 6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | TO-252AA | 6A | 17A | 0.66Ohm | 115 mJ | N-Channel | 543pF @ 100V | 660m Ω @ 3.22A, 10V | 4.5V @ 214.55μA | 6A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPCA8120,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 7.42nF | 10ns | 262 ns | 45A | 20V | 30V | 1.6W Ta 45W Tc | P-Channel | 7420pF @ 10V | 3mOhm @ 22.5A, 10V | 2V @ 1mA | 45A Ta | 190nC @ 10V | 3 mΩ | 4.5V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s403atma1-datasheets-7004.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 94W | 1 | R-PSFM-T3 | 14 ns | 12ns | 16 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 94W Tc | TO-220AB | 320A | 0.0037Ohm | 200 mJ | N-Channel | 5260pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 53μA | 80A Tc | 66nC @ 10V | 10V | ±20V |
