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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6724MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf6724mtrpbf-datasheets-3286.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 11 ns | 19ns | 16 ns | 23 ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 212A | 12 mJ | 30V | N-Channel | 4404pF @ 15V | 2.5m Ω @ 27A, 10V | 2.35V @ 100μA | 27A Ta 150A Tc | 54nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AUIRFN8401TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfn8401tr-datasheets-3295.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | 11 Weeks | 8 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 6.1 ns | 13ns | 12 ns | 22 ns | 84A | 20V | 40V | 4.2W Ta 63W Tc | N-Channel | 2170pF @ 25V | 4.6m Ω @ 50A, 10V | 3.9V @ 50μA | 84A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT286L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aot286l-datasheets-7976.pdf | TO-220-3 | 18 Weeks | FET General Purpose Power | 70A | Single | 80V | 2.1W Ta 167W Tc | N-Channel | 3142pF @ 40V | 6m Ω @ 20A, 10V | 3.3V @ 250μA | 13A Ta 70A Tc | 63nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMJS1D2N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmjs1d2n04cltwg-datasheets-3315.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 128W Tc | N-Channel | 5600pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 170μA | 41A Ta 237A Tc | 93nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0604N3-G-P005 | Microchip Technology | $1.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0604n3g-datasheets-8697.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 6 Weeks | 453.59237mg | EAR99 | HIGH INPUT IMPEDANCE | BOTTOM | 1 | 1 | O-PBCY-T3 | 700mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 740mW Ta | 0.7A | 0.75Ohm | 50 pF | N-Channel | 190pF @ 20V | 750m Ω @ 1.5A, 10V | 1.6V @ 1mA | 700mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R660CFDAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r660cfdaatma1-datasheets-3328.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 9 ns | 8ns | 10 ns | 40 ns | 6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | TO-252AA | 6A | 17A | 0.66Ohm | 115 mJ | N-Channel | 543pF @ 100V | 660m Ω @ 3.22A, 10V | 4.5V @ 214.55μA | 6A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TPCA8120,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 7.42nF | 10ns | 262 ns | 45A | 20V | 30V | 1.6W Ta 45W Tc | P-Channel | 7420pF @ 10V | 3mOhm @ 22.5A, 10V | 2V @ 1mA | 45A Ta | 190nC @ 10V | 3 mΩ | 4.5V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s403atma1-datasheets-7004.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 94W | 1 | R-PSFM-T3 | 14 ns | 12ns | 16 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 94W Tc | TO-220AB | 320A | 0.0037Ohm | 200 mJ | N-Channel | 5260pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 53μA | 80A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TSM70N900CH C5G | Taiwan Semiconductor Corporation | $2.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 50W Tc | N-Channel | 482pF @ 100V | 900m Ω @ 1.5A, 10V | 4V @ 250μA | 4.5A Tc | 9.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA060N06NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa060n06nm5sxksa1-datasheets-3253.pdf | TO-220-3 Full Pack | 13 Weeks | 60V | 33W Tc | N-Channel | 2600pF @ 30V | 6m Ω @ 56A, 10V | 3.3V @ 36μA | 56A Tc | 36nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF250N65S3R0L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | /files/onsemiconductor-fcpf250n65s3r0l-datasheets-3173.pdf | TO-220-3 Full Pack | 12 Weeks | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 31W Tc | N-Channel | 1010pF @ 400V | 250m Ω @ 6A, 10V | 4.5V @ 1.2mA | 12A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6711STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf6711strpbf-datasheets-3259.pdf | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | 4 | 26 Weeks | 5 | EAR99 | No | BOTTOM | 42W | 1 | FET General Purpose Power | R-XBCC-N4 | 7.7 ns | 13ns | 5.4 ns | 7.1 ns | 19A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 42W Tc | 84A | 0.0038Ohm | 62 mJ | 25V | N-Channel | 1810pF @ 13V | 3.8m Ω @ 19A, 10V | 2.35V @ 25μA | 19A Ta 84A Tc | 20nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF9Z14LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf9z14spbf-datasheets-3262.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 8 Weeks | 2.387001g | 3 | No | 1 | Single | I2PAK | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | 3.7W Ta 43W Tc | 500mOhm | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AON6560 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | 8-PowerSMD, Flat Leads | 1mm | 18 Weeks | DFN5x6_8L_EP1_P | 1 | 7.3W | 150°C | 8-DFN (5x6) | 11.5nF | 16 ns | 115.5 ns | 200A | 20V | 30V | 1.4V | 7.3W Ta 208W Tc | 550μOhm | 30V | N-Channel | 11500pF @ 15V | 0.62mOhm @ 20A, 10V | 2.2V @ 250μA | 84A Ta 200A Tc | 325nC @ 10V | 680 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP04N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | /files/infineontechnologies-spp04n50c3hksa1-datasheets-5447.pdf | 560V | 4.5A | TO-220 | 10.36mm | 20.7mm | 4.57mm | Contains Lead | 18 Weeks | 3 | 50W | 1 | Single | 50W | 1 | 150°C | 470pF | 10 ns | 5ns | 70 ns | 4.5A | 20V | 500V | 500V | 850mOhm | 500V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK969R3-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk969r3100e118-datasheets-3197.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 245 | 3 | 30 | 263W | 1 | R-PSSO-G2 | 39.5 ns | 95.1ns | 93.4 ns | 118 ns | 100A | 10V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | 405A | 219 mJ | 100V | N-Channel | 11650pF @ 25V | 8.9m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 94.3nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||
| BUK964R2-60E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk964r260e118-datasheets-3184.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 47 ns | 97ns | 73 ns | 84 ns | 100A | 10V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | 675A | 0.0042Ohm | N-Channel | 11380pF @ 25V | 3.9m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 72nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| SPB07N60S5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb07n60s5atma1-datasheets-2764.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 7.3A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | 83W Tc | 14.6A | 0.6Ohm | N-Channel | 970pF @ 25V | 600m Ω @ 4.6A, 10V | 5.5V @ 350μA | 7.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 50W Tc | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMNR60-25YLHX | Nexperia USA Inc. | $2.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmnr6025ylhx-datasheets-3214.pdf | SC-100, SOT-669 | 16 Weeks | 4 | 25V | 268W Ta | N-Channel | 8117pF @ 12V | 700m Ω @ 25A, 10V | 2.2V @ 2mA | 300A Ta | 147nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB14N50 | Alpha & Omega Semiconductor Inc. | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | not_compliant | e3 | Tin (Sn) | 278W | 1 | FET General Purpose Power | 14A | 30V | Single | 500V | 278W Tc | N-Channel | 2297pF @ 25V | 380m Ω @ 7A, 10V | 4.5V @ 250μA | 14A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB22N03S4L15ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb22n03s4l15atma1-datasheets-3227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 31W Tc | 88A | 0.0146Ohm | 20 mJ | N-Channel | 980pF @ 25V | 14.6m Ω @ 22A, 10V | 2.2V @ 10μA | 22A Tc | 14nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| FCI7N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fci7n60-datasheets-3233.pdf | 600V | 7A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.29mm | 11.05mm | 4.83mm | Lead Free | 3 | 12 Weeks | 2.084g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 83W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 55ns | 32 ns | 75 ns | 7A | 30V | SILICON | SWITCHING | 3V | 83W Tc | 7A | 0.6Ohm | 600V | N-Channel | 920pF @ 25V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| DMT10H4M5LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R4008ANDTL | ROHM Semiconductor | $2.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 6 Weeks | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 20W Tc | 8A | 0.95Ohm | 4.3 mJ | N-Channel | 500pF @ 25V | 950m Ω @ 4A, 10V | 4.5V @ 1mA | 8A Ta | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMYS2D9N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys2d9n04cltwg-datasheets-3241.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.7W Ta 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 11μA | 27A Ta 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO052N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso052n03s-datasheets-2129.pdf | 30V | 18A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 9.7 ns | 7.4ns | 7.4 ns | 40 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.2V | 1.56W Ta | MS-012AA | 0.0052Ohm | 30V | N-Channel | 5530pF @ 15V | 5.2m Ω @ 17A, 10V | 2V @ 70μA | 14A Ta | 43nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SQJ401EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj401ept2ge3-datasheets-3075.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 12V | 83W Tc | P-Channel | 10015pF @ 6V | 6mOhm @ 15A, 4.5V | 1.5V @ 250μA | 32A Tc | 164nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R420CFDBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipp65r420cfdxksa1-datasheets-7631.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 83.3W Tc | 8.7A | 27A | 0.42Ohm | 227 mJ | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 8.7A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP16CN10NGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp16cn10nghksa1-datasheets-3116.pdf | TO-220-3 | No | 100W | 1 | PG-TO220-3 | 3.22nF | 15 ns | 14ns | 7 ns | 27 ns | 53A | 20V | 100V | 100W Tc | N-Channel | 3220pF @ 50V | 16.5mOhm @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 16.5 mΩ | 10V | ±20V |
