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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQI4N80TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fqb4n80tm-datasheets-8517.pdf | 800V | 3.9A | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.9mm | 9.2mm | 4.5mm | Lead Free | 3 | 8 Weeks | 2.084g | 3.6Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 3.13W | 1 | FET General Purpose Power | 16 ns | 45ns | 35 ns | 35 ns | 3.9A | 30V | SILICON | SWITCHING | 3.13W Ta 130W Tc | 460 mJ | 800V | N-Channel | 880pF @ 25V | 3.6 Ω @ 1.95A, 10V | 5V @ 250μA | 3.9A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| NVD5802NT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd5802nt4gvf01-datasheets-2939.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 40 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | DPAK | 40V | 2.5W Ta 93.75W Tc | N-Channel | 5300pF @ 12V | 4.4mOhm @ 50A, 10V | 3.5V @ 250μA | 16.4A Ta 101A Tc | 100nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N04S304ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipd90n04s304atma1-datasheets-2940.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 136W Tc | 90A | 360A | 0.0036Ohm | 260 mJ | N-Channel | 5200pF @ 25V | 3.6m Ω @ 80A, 10V | 4V @ 90μA | 90A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB45N06S409ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi45n06s409aksa2-datasheets-1344.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 1.946308g | 3 | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 15 ns | 40ns | 5 ns | 20 ns | 45A | 20V | 60V | SILICON | 71W Tc | 97 mJ | N-Channel | 3785pF @ 25V | 9.4m Ω @ 45A, 10V | 4V @ 34μA | 45A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPB12N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spb12n50c3atma1-datasheets-2780.pdf | 560V | 11.6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | No SVHC | 3 | no | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | 4 | Single | 125W | 1 | R-PSSO-G2 | 10 ns | 8ns | 8 ns | 45 ns | 11.6A | 20V | SILICON | 125W Tc | 500V | N-Channel | 1200pF @ 25V | 3 V | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMJS1D7N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmjs1d7n04ctwg-datasheets-2965.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 130μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8065-H,LQ(S | Toshiba Semiconductor and Storage | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 1.6nF | 2.2ns | 2.3 ns | 16A | 30V | 30V | 1.6W Ta 25W Tc | N-Channel | 1600pF @ 10V | 11.4mOhm @ 8A, 10V | 2.3V @ 200μA | 16A Ta | 20nC @ 10V | 11.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD7N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 600V | 78W Tc | N-Channel | 680pF @ 100V | 600mOhm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFU540Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfr540z-datasheets-9214.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 13 Weeks | 3 | No | 91W | 1 | I-PAK | 1.69nF | 14 ns | 42ns | 34 ns | 43 ns | 35A | 20V | 100V | 91W Tc | 22.5mOhm | 100V | N-Channel | 1690pF @ 25V | 28.5mOhm @ 21A, 10V | 4V @ 50μA | 35A Tc | 59nC @ 10V | 28.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9604-40A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk960440a118-datasheets-2906.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 300W | 1 | R-PSSO-G2 | 62 ns | 309ns | 306 ns | 365 ns | 198A | 15V | 40V | SILICON | DRAIN | SWITCHING | 300W Tc | 794A | 0.0059Ohm | 1600 mJ | 40V | N-Channel | 8260pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 128nC @ 5V | 4.3V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| BSC019N04LSTATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD7N60ET4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 3 | GULL WING | 1 | R-PSSO-G2 | 13 ns | 13ns | 14 ns | 24 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 600V | 609V | 78W Tc | TO-252AA | 7A | 18A | 0.6Ohm | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7606-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk760655a118-datasheets-2910.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 300W | 1 | R-PSSO-G2 | 35 ns | 115ns | 110 ns | 155 ns | 154A | 20V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | 75A | 55V | N-Channel | 6000pF @ 25V | 6.3m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S3L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80n06s3l06-datasheets-1198.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 43ns | 39 ns | 55 ns | 80A | 16V | SILICON | DRAIN | SWITCHING | 136W Tc | 320A | 0.0056Ohm | 250 mJ | 55V | N-Channel | 9417pF @ 25V | 5.6m Ω @ 56A, 10V | 2.2V @ 80μA | 80A Tc | 196nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| SPB10N10L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb10n10l-datasheets-1435.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | YES | SINGLE | GULL WING | 4 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 50W Tc | 10.3A | 42.2A | 0.21Ohm | 60 mJ | N-Channel | 444pF @ 25V | 154m Ω @ 8.1A, 10V | 2V @ 21μA | 10.3A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4413CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4413cdyt1ge3-datasheets-7853.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 506.605978mg | 8 | 3W | 1 | 8-SO | -15A | 30V | 9.5mOhm | 30V | P-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP084N06L3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb081n06l3gatma1-datasheets-0391.pdf | TO-220-3 | 3 | 13 Weeks | No SVHC | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | 15 ns | 26ns | 7 ns | 37 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 79W Tc | TO-220AB | 200A | 0.0084Ohm | N-Channel | 4900pF @ 30V | 8.4m Ω @ 50A, 10V | 2.2V @ 34μA | 50A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 8 Weeks | 2.387001g | Unknown | 3 | No | 1 | Single | I2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 4.5V | 74W Tc | 2.2Ohm | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPB20N60S5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb20n60s5atma1-datasheets-2833.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 208W Tc | 20A | 40A | 0.19Ohm | 690 mJ | N-Channel | 3000pF @ 25V | 190m Ω @ 13A, 10V | 5.5V @ 1mA | 20A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AON6230 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8 | 104W | 1 | FET General Purpose Power | 85A | 20V | Single | 40V | 7.4W Ta 104W Tc | N-Channel | 6050pF @ 20V | 1.44m Ω @ 20A, 10V | 2.3V @ 250μA | 57.5A Ta 85A Tc | 114nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRS100P03TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 17 Weeks | 10A | 30V | P-Channel | 10A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R380E6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r380e6atma1-datasheets-2896.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 7ns | 8 ns | 57 ns | 10.6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | TO-252AA | 29A | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AONX36372 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR320TRRPBF | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.8Ohm | 3 | No | 1 | Single | D-Pak | 350pF | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | 400V | 2.5W Ta 42W Tc | 1.8Ohm | N-Channel | 350pF @ 25V | 1.8Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NVATS4A104PZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvats4a104pzt4g-datasheets-2903.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | NOT SPECIFIED | 30V | 72W Tc | P-Channel | 3950pF @ 10V | 8.4m Ω @ 38A, 10V | 2.6V @ 1mA | 82A Ta | 76nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3407ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb3407zpbf-datasheets-2837.pdf | TO-220-3 | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 120A | Single | 75V | 230W Tc | N-Channel | 4750pF @ 50V | 6.4m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB050N06NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipp050n06ng-datasheets-1009.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 300W Tc | 400A | 0.0047Ohm | N-Channel | 6100pF @ 30V | 4.7m Ω @ 100A, 10V | 4V @ 270μA | 100A Tc | 167nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPB80N10L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n10l-datasheets-1519.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | YES | SINGLE | GULL WING | 245 | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 250W Tc | 80A | 320A | 0.024Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 14m Ω @ 58A, 10V | 2V @ 2mA | 80A Tc | 240nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF11N70 | Alpha & Omega Semiconductor Inc. | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 2.15nF | 11A | 700V | 28W Tc | N-Channel | 2150pF @ 25V | 870mOhm @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 45nC @ 10V | 870 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70N12S311ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd70n12s311atma1-datasheets-2864.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 120V | 120V | 125W Tc | 70A | 280A | 0.0111Ohm | 410 mJ | N-Channel | 4355pF @ 25V | 11.1m Ω @ 70A, 10V | 4V @ 83μA | 70A Tc | 65nC @ 10V | 10V | ±20V |
