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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF820LPBF | Vishay Siliconix | $6.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | SILICON | DRAIN | 3.1W Ta 50W Tc | TO-220AB | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3 Ω @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR2905ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfr2905z-datasheets-7653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 110W | 1 | R-PSSO-G2 | 66ns | 35 ns | 42A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110W Tc | TO-252AA | 240A | 0.0145Ohm | 55 mJ | 55V | N-Channel | 1380pF @ 25V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMG7N65SJ3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg7n65sj3-datasheets-3133.pdf | TO-251-3, IPak, Short Leads | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 125W Tc | N-Channel | 886pF @ 50V | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 5.5A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R360CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r360cfd7atma1-datasheets-1363.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 43W Tc | N-Channel | 679pF @ 400V | 360m Ω @ 2.9A, 10V | 4.5V @ 140μA | 7A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5030DPP-M0#T2 | Renesas Electronics America | $6.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk5030dppm0t2-datasheets-3142.pdf | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | 3 | NOT SPECIFIED | 5A | 500V | 28.5W Tc | N-Channel | 550pF @ 25V | 1.6 Ω @ 2A, 10V | 5A Ta | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R1-40PLQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn2r140plq-datasheets-3145.pdf | TO-220-3 | 3 | 12 Weeks | 3 | Tin | NO | SINGLE | 3 | 293W | 1 | 56 ns | 96ns | 92 ns | 151 ns | 150A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 293W Tc | TO-220AB | 0.0026Ohm | 40V | N-Channel | 9584pF @ 25V | 2.2m Ω @ 25A, 10V | 2.1V @ 1mA | 150A Tc | 87.8nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN009-100B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn009100b118-datasheets-3149.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 245 | 3 | Single | 30 | 230W | 1 | R-PSSO-G2 | 38 ns | 59ns | 43 ns | 120 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 230W Tc | 400A | 0.0088Ohm | 120 mJ | 100V | N-Channel | 8250pF @ 25V | 8.8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 156nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQJ431EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj431ept2ge3-datasheets-3151.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 200V | 83W Tc | P-Channel | 4355pF @ 25V | 213mOhm @ 3.8A, 10V | 3.5V @ 250μA | 12A Tc | 106nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7742DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7742dpt1ge3-datasheets-3097.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 43 ns | 18ns | 23 ns | 50 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5.4W Ta 83W Tc | 0.0035Ohm | N-Channel | 5300pF @ 15V | 3.5m Ω @ 20A, 10V | 2.7V @ 250μA | 60A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTMJS2D5N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.9W Ta 113A Tc | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 3.9A Ta 113A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI8N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqb8n60ctm-datasheets-8790.pdf | 600V | 8A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 4 Weeks | 2.084g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 3.13W | 1 | FET General Purpose Power | R-PSIP-T3 | 16.5 ns | 60.5ns | 64.5 ns | 81 ns | 7.5A | 30V | SILICON | SWITCHING | 3.13W Ta 147W Tc | 30A | 230 mJ | 600V | N-Channel | 1255pF @ 25V | 1.2 Ω @ 3.75A, 10V | 4V @ 250μA | 7.5A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| DMTH41M8SPS-13 | Diodes Incorporated | $1.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth41m8sps13-datasheets-3168.pdf | 8-PowerTDFN | 20 Weeks | not_compliant | e3 | Matte Tin (Sn) | 40V | 3.03W | N-Channel | 6968pF @ 20V | 1.8m Ω @ 30A, 10V | 4V @ 250μA | 100A Tc | 79.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO052N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso052n03s-datasheets-2129.pdf | 30V | 18A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 9.7 ns | 7.4ns | 7.4 ns | 40 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.2V | 1.56W Ta | MS-012AA | 0.0052Ohm | 30V | N-Channel | 5530pF @ 15V | 5.2m Ω @ 17A, 10V | 2V @ 70μA | 14A Ta | 43nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STL51N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl51n3llh5-datasheets-7879.pdf | 8-PowerVDFN | Lead Free | 14.5MOhm | 8 | EAR99 | No | STL51 | 62.5W | FET General Purpose Power | 4 ns | 4.2ns | 3.5 ns | 2.1 ns | 51A | 22V | Single | 62.5W Tc | 30V | N-Channel | 724pF @ 25V | 14.5m Ω @ 6.3A, 10V | 2.5V @ 250μA | 51A Tc | 5nC @ 4.5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R420CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r420cfdxksa2-datasheets-7593.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3 | 83.3W | 1 | PG-TO252-3 | 870pF | 10 ns | 7ns | 8 ns | 38 ns | 8.7A | 20V | 650V | 650V | 83.3W Tc | N-Channel | 870pF @ 100V | 420mOhm @ 3.4A, 10V | 4.5V @ 300μA | 8.7A Tc | 31.5nC @ 10V | 420 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R420CFDATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r420cfdxksa2-datasheets-7593.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 650V | 83.3W Tc | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 300μA | 8.7A Tc | 31.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C426NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c426nlt1g-datasheets-8300.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 128W Tc | N-Channel | 5600pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 41A Ta 237A Tc | 93nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP45N06S4L08AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi45n06s4l08aksa1-datasheets-0259.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | 3 | 14 Weeks | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 9 ns | 2ns | 8 ns | 45 ns | 45A | 16V | 60V | SILICON | DRAIN | 71W Tc | TO-220AB | 180A | 0.0079Ohm | 97 mJ | N-Channel | 4780pF @ 25V | 8.2m Ω @ 45A, 10V | 2.2V @ 35μA | 45A Tc | 64nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| SIHU7N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihu7n60ege3-datasheets-3032.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 78W | 1 | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 600V | 609V | 2V | 78W Tc | 7A | 0.6Ohm | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C01NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs4c01nt1g-datasheets-9181.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | FET General Purpose Power | R-PDSO-F5 | 319A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.84W Ta 161W Tc | 900A | 0.00095Ohm | N-Channel | 10144pF @ 15V | 0.9m Ω @ 30A, 10V | 2.2V @ 250μA | 49A Ta 319A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R399CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r399cpatma1-datasheets-3038.pdf | TO-252-3 | 6.73mm | 2.413mm | 6.223mm | 26 Weeks | 3.949996g | No SVHC | 3 | 83W | 1 | Single | 83W | 890pF | 35 ns | 14ns | 14 ns | 80 ns | 9A | 20V | 500V | 550V | 500V | 3V | 399mOhm | 550V | 3 V | 399 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4427BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4427bdyt1e3-datasheets-7261.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 19.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | 12 ns | 15ns | 110 ns | 242 ns | -12.6A | 12V | -30V | SILICON | 30V | -600mV | 1.5W Ta | 9.7A | -30V | P-Channel | -1.4 V | 10.5m Ω @ 12.6A, 10V | 1.4V @ 250μA | 9.7A Ta | 70nC @ 4.5V | 10V | ±12V | ||||||||||||||||||||||||||||||||||||
| TK11P65W,RQ | Toshiba Semiconductor and Storage | $1.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 890pF | 11.1A | 650V | 100W Tc | N-Channel | 890pF @ 300V | 440mOhm @ 5.5A, 10V | 3.5V @ 450μA | 11.1A Ta | 25nC @ 10V | 440 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ70H1D3SJ3 | Diodes Incorporated | $0.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~155°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4.6A | 700V | 41W Tc | N-Channel | 351pF @ 50V | 1.3 Ω @ 2.5A, 10V | 4V @ 250μA | 4.6A Tc | 13.9nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSH140N03TB1 | ROHM Semiconductor | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsh140n03tb1-datasheets-3049.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Single | 2W | 14A | 20V | 2W Ta | 30V | N-Channel | 14A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9605-30A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk960530a118-datasheets-9098.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 230W | 1 | R-PSSO-G2 | 45 ns | 220ns | 320 ns | 345 ns | 75A | 10V | 30V | SILICON | DRAIN | SWITCHING | 230W Tc | 400A | 0.0054Ohm | 500 mJ | 30V | N-Channel | 8600pF @ 25V | 4.6m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFR3806TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr3806trl-datasheets-3059.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 71W Tc | TO-252AA | 43A | 170A | 0.0158Ohm | 73 mJ | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4H01NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4h01nt3g-datasheets-2984.pdf | 8-PowerTDFN | Lead Free | 4 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 334A | Single | 25V | 3.2W Ta 125W Tc | N-Channel | 5693pF @ 12V | 0.7m Ω @ 30A, 10V | 2.1V @ 250μA | 54A Ta 334A Tc | 85nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8062-H,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 12 Weeks | 8 | No | 8-SOP | 2.9nF | 3ns | 9.7 ns | 18A | 20V | 30V | 1W Ta | N-Channel | 2900pF @ 10V | 5.8mOhm @ 9A, 10V | 2.3V @ 300μA | 18A Ta | 34nC @ 10V | 5.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD7N60ET4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 3 | GULL WING | 1 | R-PSSO-G2 | 13 ns | 13ns | 14 ns | 24 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 600V | 609V | 78W Tc | TO-252AA | 7A | 18A | 0.6Ohm | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V |
