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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7413ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7413ztrpbf-datasheets-8068.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13A | 100A | 0.01Ohm | 32 mJ | N-Channel | 1210pF @ 15V | 10m Ω @ 13A, 10V | 2.25V @ 25μA | 13A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7831PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7831trpbf-datasheets-9253.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 21A | 170A | 0.0036Ohm | 100 mJ | N-Channel | 6240pF @ 15V | 3.6m Ω @ 20A, 10V | 2.35V @ 250μA | 21A Ta | 60nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7478PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7478trpbf-datasheets-2024.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | EAR99 | 60V | 2.5W Ta | N-Channel | 1740pF @ 25V | 26m Ω @ 4.2A, 10V | 3V @ 250μA | 7A Ta | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709ZCS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | TIN LEAD | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 79W Tc | 42A | 350A | 0.0063Ohm | 60 mJ | N-Channel | 2130pF @ 15V | 6.3m Ω @ 21A, 10V | 2.25V @ 250μA | 87A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7493PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf7493trpbf-datasheets-6869.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 2.5W Tc | MS-012AA | 9.3A | 74A | 0.015Ohm | 180 mJ | N-Channel | 1510pF @ 25V | 15m Ω @ 5.6A, 10V | 4V @ 250μA | 9.3A Tc | 53nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7456PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7456trpbf-datasheets-2737.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 16A | 130A | 0.0065Ohm | 250 mJ | N-Channel | 3640pF @ 15V | 6.5m Ω @ 16A, 10V | 2V @ 250μA | 16A Ta | 62nC @ 5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7469PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7469trpbf-datasheets-8042.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | 40V | 2.5W Ta | N-Channel | 2000pF @ 20V | 17m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807VD1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807vd1pbf-datasheets-6857.pdf | 30V | 8.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 25MOhm | 8 | No | 1.6W | 1 | 6.3 ns | 1.2ns | 2.2 ns | 1.1 ns | 8.3A | 20V | 2.5W Ta | 30V | N-Channel | 20 V | 25m Ω @ 7A, 4.5V | 3V @ 250μA | 8.3A Ta | 14nC @ 4.5V | Schottky Diode (Isolated) | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7842PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7842pbf-datasheets-6863.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | 40V | 2.5W Ta | N-Channel | 4500pF @ 20V | 5m Ω @ 17A, 10V | 2.25V @ 250μA | 18A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGSF1N03LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mgsf1n03lt1g-datasheets-3861.pdf | 30V | 750mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | 420mW | DUAL | GULL WING | 240 | 3 | Single | 30 | 730mW | 1 | FET General Purpose Power | Not Qualified | 1ns | 1 ns | 16 ns | 1.6A | 20V | SWITCHING | 0.1Ohm | 30V | N-Channel | 140pF @ 5V | 100m Ω @ 1.2A, 10V | 2.4V @ 250μA | 1.6A Ta | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7465PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7465trpbf-datasheets-9607.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 2.5W Ta | MS-012AA | 1.9A | 0.28Ohm | N-Channel | 330pF @ 25V | 280m Ω @ 1.14A, 10V | 5.5V @ 250μA | 1.9A Ta | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7451PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7451trpbf-datasheets-9957.pdf | 150V | 3.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 10 ns | 4.2ns | 15 ns | 17 ns | 3.6A | 30V | 150V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 5.5V | 2.5W Ta | 29A | 0.09Ohm | 150V | N-Channel | 990pF @ 25V | 5.5 V | 90m Ω @ 2.2A, 10V | 5.5V @ 250μA | 3.6A Ta | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF7421D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7421d1trpbf-datasheets-6298.pdf | 30V | 5.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 8 | No | 2.5W | 1 | 8-SO | 510pF | 4A | 420mV | 6.7 ns | 27ns | 16 ns | 20 ns | 5.8A | 20V | 30V | 30V | 4V | 2W Ta | 15A | 60mOhm | 30V | N-Channel | 510pF @ 25V | 4 V | 35mOhm @ 4.1A, 10V | 1V @ 250μA | 5.8A Ta | 27nC @ 10V | Schottky Diode (Isolated) | 35 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7822PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7822pbf-datasheets-6787.pdf | 30V | 18A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 8 | No | 3.1W | 1 | 8-SO | 5.5nF | 15 ns | 5.5ns | 12 ns | 22 ns | 18A | 12V | 30V | 30V | 6.3 mm | 1V | 3.1W Ta | 6.5mOhm | 30V | N-Channel | 5500pF @ 16V | 1 V | 6.5mOhm @ 15A, 4.5V | 1V @ 250μA | 18A Ta | 60nC @ 5V | 6.5 mΩ | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7433PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7433pbf-datasheets-6791.pdf | 8-SOIC (0.154, 3.90mm Width) | 12V | 2.5W Ta | P-Channel | 1877pF @ 10V | 24m Ω @ 8.7A, 4.5V | 900mV @ 250μA | 8.9A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7470PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7470trpbf-datasheets-7209.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 40V | 2.5W Ta | N-Channel | 3430pF @ 20V | 13mOhm @ 10A, 10V | 2V @ 250μA | 10A Ta | 44nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7453PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irf7453pbf-datasheets-5658.pdf | 250V | 2.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2.5W | 1 | 8-SO | 930pF | 2.5ns | 2.2A | 30V | 250V | 250V | 2.5W Ta | 250V | N-Channel | 930pF @ 25V | 5.5 V | 230mOhm @ 1.3A, 10V | 5.5V @ 250μA | 2.2A Ta | 38nC @ 10V | 230 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7821PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~155°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7821trpbf-datasheets-1460.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | 30V | 2.5W Ta | N-Channel | 1010pF @ 15V | 9.1m Ω @ 13A, 10V | 1V @ 250μA | 13.6A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7324D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | -20V | -2.9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | No | 2W | 1 | 8-SO | 260pF | 1.7A | 500mV | 10 ns | 12ns | 7.6 ns | 11 ns | -2.2A | 12V | -20V | 20V | -700mV | 2W Ta | 270mOhm | -20V | P-Channel | 260pF @ 15V | -700 mV | 270mOhm @ 1.2A, 4.5V | 700mV @ 250μA | 2.2A Ta | 7.8nC @ 4.5V | Schottky Diode (Isolated) | 270 mΩ | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7807PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807trpbf-datasheets-8459.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Tc | MS-012AA | 8.3A | 66A | 0.025Ohm | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7805ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7805ztrpbf-datasheets-8126.pdf | 30V | 16A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 8 | No | DUAL | GULL WING | Single | 2.5W | 1 | 11 ns | 10ns | 3.7 ns | 14 ns | 16A | 20V | SILICON | SWITCHING | 2.25V | 2.5W Ta | 30V | N-Channel | 2080pF @ 15V | 6.8m Ω @ 16A, 10V | 2.25V @ 250μA | 16A Ta | 27nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7834PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7834pbf-datasheets-6838.pdf | 30V | 19A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 15 Weeks | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 13.7 ns | 14.3ns | 5 ns | 18 ns | 19A | 20V | SILICON | SWITCHING | 2.5W Ta | 0.0045Ohm | 25 mJ | 30V | N-Channel | 3710pF @ 15V | 2.25 V | 4.5m Ω @ 19A, 10V | 2.25V @ 250μA | 19A Ta | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF7463PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7463trpbf-datasheets-0820.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 14A | 110A | 0.008Ohm | 320 mJ | N-Channel | 3150pF @ 15V | 8m Ω @ 14A, 10V | 2V @ 250μA | 14A Ta | 51nC @ 4.5V | 2.7V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7460PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7460pbf-datasheets-6754.pdf | 20V | 12A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2.5W | 8-SO | 2.05nF | 6.9ns | 4.3 ns | 12 ns | 12A | 20V | 20V | 2.5W Ta | 14mOhm | 20V | N-Channel | 2050pF @ 10V | 3 V | 10mOhm @ 12A, 10V | 3V @ 250μA | 12A Ta | 19nC @ 4.5V | 10 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7420PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7420trpbf-datasheets-3737.pdf | -12V | -11.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 14MOhm | 8 | Tin | No | Single | 2.5W | 1 | 8.8 ns | 8.8ns | 225 ns | 291 ns | -11.5A | 8V | -12V | 12V | -900mV | 2.5W Ta | -12V | P-Channel | 3529pF @ 10V | -900 mV | 14m Ω @ 11.5A, 4.5V | 900mV @ 250μA | 11.5A Tc | 38nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7811APBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-irf7811apbf-datasheets-6766.pdf | 28V | 11.4A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2.5W | 1 | 8-SO | 1.76nF | 11A | 12V | 28V | 2.5W Ta | 28V | N-Channel | 1760pF @ 15V | 10mOhm @ 11A, 10V | 3V @ 250μA | 11A Ta | 26nC @ 4.5V | 10 mΩ | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64-4051 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 35W Tc | N-Channel | 380pF @ 25V | 58m Ω @ 9.6A, 10V | 3V @ 250μA | 16A Tc | 9.9nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7404PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7404trpbf-datasheets-1068.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 6.7A | 27A | 0.04Ohm | P-Channel | 1500pF @ 15V | 40m Ω @ 3.2A, 4.5V | 700mV @ 250μA | 6.7A Ta | 50nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| MTP6P20E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtp6p20e-datasheets-6674.pdf | -200V | -6A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | 32ns | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 75W Tc | TO-220AB | 6A | 21A | 1Ohm | 180 mJ | P-Channel | 750pF @ 25V | 1 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 30nC @ 10V | 10V | ±20V |
