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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MTP23P06V | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtp23p06v-datasheets-6676.pdf | -60V | -23A | TO-220-3 | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | no | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | 235 | 3 | Single | 30 | 90W | 1 | Other Transistors | Not Qualified | 98.3ns | 62 ns | 41 ns | 23A | 15V | SILICON | DRAIN | SWITCHING | 60V | 90W Tc | TO-220AB | 794 mJ | -60V | P-Channel | 1620pF @ 25V | 120m Ω @ 11.5A, 10V | 4V @ 250μA | 23A Tc | 50nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||
| IRF7353D2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 30V | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No | 2W | 8-SO | 650pF | 8.1 ns | 8.9ns | 18 ns | 26 ns | 6.5A | 20V | 30V | 2W Ta | 46mOhm | 30V | N-Channel | 650pF @ 25V | 29mOhm @ 5.8A, 10V | 1V @ 250μA | 6.5A Ta | 33nC @ 10V | Schottky Diode (Isolated) | 29 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7413PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7413trpbf-datasheets-0381.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13A | 58A | 0.011Ohm | 260 mJ | N-Channel | 1800pF @ 25V | 11m Ω @ 7.3A, 10V | 3V @ 250μA | 13A Ta | 79nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7473PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7473trpbf-datasheets-4284.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | MS-012AA | 6.9A | 55A | 0.026Ohm | 140 mJ | N-Channel | 3180pF @ 25V | 26m Ω @ 4.1A, 10V | 5.5V @ 250μA | 6.9A Ta | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7805PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7805trpbf-datasheets-9622.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | No SVHC | 11MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 16 ns | 20ns | 16 ns | 38 ns | 13A | 12V | SILICON | SWITCHING | 3V | 2.5W Ta | 30V | N-Channel | 3 V | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| IRF7455PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7455trpbf-datasheets-7452.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 22 Weeks | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 15A | 120A | 0.0075Ohm | 200 mJ | N-Channel | 3480pF @ 25V | 7.5m Ω @ 15A, 10V | 2V @ 250μA | 15A Ta | 56nC @ 5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7471PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7471pbf-datasheets-6721.pdf | 40V | 10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | No SVHC | 8 | No | 2.5W | 1 | 8-SO | 2.82nF | 12 ns | 2.7ns | 4.1 ns | 15 ns | 10A | 20V | 40V | 3V | 2.5W Ta | 16mOhm | 40V | N-Channel | 2820pF @ 20V | 13mOhm @ 10A, 10V | 3V @ 250μA | 10A Ta | 32nC @ 4.5V | 13 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7457PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7457trpbf-datasheets-9867.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA-LOW RESISTANCE | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 15A | 120A | 0.007Ohm | 265 mJ | N-Channel | 3100pF @ 10V | 7m Ω @ 15A, 10V | 3V @ 250μA | 15A Ta | 42nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7406PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7406trpbf-datasheets-7156.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 39 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 6.7A | 23A | 0.045Ohm | P-Channel | 1100pF @ 25V | 45m Ω @ 2.8A, 10V | 1V @ 250μA | 5.8A Ta | 59nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLR3714ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 35W Tc | N-Channel | 560pF @ 10V | 15m Ω @ 15A, 10V | 2.55V @ 250μA | 37A Tc | 7.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3205ZSTRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3205zpbf-datasheets-1803.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 75A | 55V | 170W Tc | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTP2P50E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtp2p50e-datasheets-6656.pdf | -500V | -2A | TO-220-3 | 10.28mm | 9.28mm | 4.82mm | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 5 days ago) | no | EAR99 | HIGH VOLTAGE | not_compliant | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 75W | 1 | Other Transistors | Not Qualified | 12 ns | 14ns | 19 ns | 21 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 500V | 75W Tc | TO-220AB | 2A | 6A | 6Ohm | 80 mJ | -500V | P-Channel | 1183pF @ 25V | 6 Ω @ 1A, 10V | 4V @ 250μA | 2A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRL3715ZCS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7401PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7401trpbf-datasheets-8013.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | 20V | 2.5W Ta | N-Channel | 1600pF @ 15V | 22m Ω @ 4.1A, 4.5V | 700mV @ 250μA | 8.7A Ta | 48nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3710Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3710ztrl-datasheets-6109.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 140W Tc | 42A | 220A | 0.018Ohm | 150 mJ | N-Channel | 2930pF @ 25V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7353D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7353d1pbf-datasheets-6607.pdf | 30V | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 8 | No | 20W | 1 | 8-SO | 650pF | 2.7A | 390mV | 8.1 ns | 8.9ns | 17 ns | 26 ns | 6.5A | 20V | 30V | 30V | 1V | 2W Ta | 11A | 46mOhm | 30V | N-Channel | 650pF @ 25V | 1 V | 32mOhm @ 5.8A, 10V | 1V @ 250μA | 6.5A Ta | 33nC @ 10V | Schottky Diode (Isolated) | 32 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTP65N02R | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp65n02r-datasheets-6613.pdf | 24V | 65A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 62.5W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 53ns | 10 ns | 14 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 25V | 1.04W Ta 62.5W Tc | TO-220AB | 7.6A | 160A | 0.0105Ohm | 60 mJ | 24V | N-Channel | 1330pF @ 20V | 10.5m Ω @ 20A, 10V | 2V @ 250μA | 7.6A Ta 58A Tc | 9.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF7403PBF | Infineon Technologies | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7403trpbf-datasheets-8286.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 8.5A | 34A | 0.022Ohm | N-Channel | 1200pF @ 25V | 22m Ω @ 4A, 10V | 1V @ 250μA | 8.5A Ta | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL3705ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 130W Tc | 75A | 340A | 0.008Ohm | 180 mJ | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP75N03R | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp75n03r-datasheets-6626.pdf | 25V | 75A | TO-220-3 | Contains Lead | 3 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 74.4W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 1.3ns | 18.4 ns | 9.7A | 20V | SILICON | DRAIN | SWITCHING | 1.25W Ta 74.4W Tc | TO-220AB | 225A | 0.013Ohm | 71.7 mJ | 25V | N-Channel | 1333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 9.7A Ta | 13.2nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR3704ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3704ztrl-datasheets-6628.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 48W Tc | TO-252AA | 30A | 240A | 0.0084Ohm | 41 mJ | N-Channel | 1190pF @ 10V | 8.4m Ω @ 15A, 10V | 2.55V @ 250μA | 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR2905Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 42A | 240A | 0.0135Ohm | 85 mJ | N-Channel | 1570pF @ 25V | 13.5m Ω @ 36A, 10V | 3V @ 250μA | 42A Tc | 35nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| NTP85N03 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb85n03t4-datasheets-6313.pdf | 28V | 85A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 22ns | 30 ns | 32 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | TO-220AB | 15A | 45A | 0.0068Ohm | 61 mJ | 28V | N-Channel | 2150pF @ 24V | 6.8m Ω @ 40A, 10V | 3V @ 250μA | 85A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7322D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7322d1pbf-datasheets-6641.pdf | 8-SOIC (0.154, 3.90mm Width) | compliant | YES | Other Transistors | Single | 20V | 2W Ta | 5.3A | P-Channel | 780pF @ 15V | 62m Ω @ 2.9A, 4.5V | 700mV @ 250μA | 5.3A Ta | 29nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP75N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp75n06-datasheets-6647.pdf | 60V | 75A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | 240 | 3 | Single | 30 | 214W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 112ns | 100 ns | 90 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta 214W Tj | TO-220AB | 225A | 0.0095Ohm | 844 mJ | 60V | N-Channel | 4510pF @ 25V | 9.5m Ω @ 37.5A, 10V | 4V @ 250μA | 75A Ta | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2N7000RLRA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/onsemiconductor-2n7000rlra-datasheets-6189.pdf | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Contains Lead | 3 | 3 | OBSOLETE (Last Updated: 6 days ago) | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn80Pb20) | NO | BOTTOM | 240 | 3 | Single | 30 | 350mW | 1 | FET General Purpose Power | Not Qualified | 10 ns | 200mA | 20V | SILICON | SWITCHING | 350mW Tc | 0.2A | 5Ohm | 5 pF | 60V | N-Channel | 60pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7413Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7413ztr-datasheets-6463.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13A | 100A | 0.01Ohm | 32 mJ | N-Channel | 1210pF @ 15V | 10m Ω @ 13A, 10V | 2.25V @ 250μA | 13A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3709z-datasheets-6574.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 79W Tc | TO-252AA | 30A | 340A | 0.0065Ohm | 100 mJ | N-Channel | 2330pF @ 15V | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7807ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807ztr-datasheets-6474.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 11A | 0.0138Ohm | N-Channel | 770pF @ 15V | 13.8m Ω @ 11A, 10V | 2.25V @ 250μA | 11A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7843TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-irlr7843tr-datasheets-6479.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | TO-252AA | 30A | 620A | 0.0033Ohm | 1440 mJ | N-Channel | 4380pF @ 15V | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V |
