Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N7002LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2v7002lt1g-datasheets-3789.pdf | 60V | 115mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 225mW | DUAL | GULL WING | 3 | Single | 300mW | 1 | FET General Purpose Power | 40 ns | 115mA | 20V | SWITCHING | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | ||||||||||||||||||||||||||||||||||||||||||||||
| BSS138LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/onsemiconductor-bss138lt3g-datasheets-5501.pdf | 50V | 200mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | YES | 225mW | DUAL | GULL WING | 260 | 3 | Single | 40 | 225mW | 1 | FET General Purpose Powers | Not Qualified | 20 ns | 200mA | 20V | SWITCHING | 0.2A | 5 pF | 50V | N-Channel | 50pF @ 25V | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | 200mA Ta | |||||||||||||||||||||||||||||||||||||||||||
| MMFT107T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mmft107t1-datasheets-6361.pdf | 200V | 250mA | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 800mW | DUAL | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-G4 | 250mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 0.25A | N-Channel | 60pF @ 25V | 14 Ω @ 200mA, 10V | 3V @ 1mA | 250mA Tc | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF6618 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6618tr1-datasheets-6075.pdf | DirectFET™ Isometric MT | 3 | EAR99 | 8541.29.00.75 | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 89W Tc | 30A | 240A | 0.0022Ohm | 210 mJ | N-Channel | 5640pF @ 15V | 2.2m Ω @ 30A, 10V | 2.35V @ 250μA | 30A Ta 170A Tc | 65nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTD12N10T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd12n10t4-datasheets-6380.pdf | 100V | 12A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | GULL WING | 240 | 3 | Single | 30 | 56.6W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30ns | 22 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.28W Ta 56.6W Tc | 36A | 0.165Ohm | 75 mJ | 100V | N-Channel | 550pF @ 25V | 165m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPD30N03S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n03s2l07-datasheets-6241.pdf | 30V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 17ns | 47 ns | 62 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 136W Tc | 120A | 0.0098Ohm | 250 mJ | 30V | N-Channel | 2530pF @ 25V | 6.7m Ω @ 30A, 10V | 2V @ 85μA | 30A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| MTD10N10ELT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtd10n10elt4-datasheets-6396.pdf | 100V | 10A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 240 | 3 | 30 | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 74ns | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.75W Ta 40W Tc | 0.22Ohm | 50 mJ | N-Channel | 1040pF @ 25V | 220m Ω @ 5A, 5V | 2V @ 250μA | 10A Tc | 15nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| BSS84LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/onsemiconductor-bss84lt1g-datasheets-5869.pdf | -50V | -130mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | Lead, Tin | e3 | Tin (Sn) | YES | 225mW | DUAL | GULL WING | 260 | 3 | Single | 10 | 225mW | 1 | Other Transistors | Not Qualified | 2.5 ns | 1ns | 1 ns | 16 ns | 130mA | 20V | SWITCHING | 50V | P-Channel | 30pF @ 5V | 10 Ω @ 100mA, 5V | 2V @ 250μA | 130mA Ta | ||||||||||||||||||||||||||||||||||||||||
| NTF3055-100T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntf3055100t1g-datasheets-5112.pdf | 60V | 3A | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 4 | 30 | 2.1W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 14ns | 13 ns | 21 ns | 3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.3W Ta | 3A | 9A | 0.11Ohm | 74 mJ | 60V | N-Channel | 455pF @ 25V | 110m Ω @ 1.5A, 10V | 4V @ 250μA | 3A Ta | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| MTW32N20E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtw32n20e-datasheets-6336.pdf | 200V | 32A | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | no | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | 235 | 3 | Single | 30 | 180W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 120ns | 91 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AE | 128A | 0.075Ohm | 810 mJ | 200V | N-Channel | 5000pF @ 25V | 75m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SPB03N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spb03n60c3atma1-datasheets-5755.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | no | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 38W | 1 | R-PSSO-G2 | 7 ns | 3ns | 12 ns | 64 ns | 3.2A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 38W Tc | 9.6A | N-Channel | 400pF @ 25V | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 3.2A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTD80N02T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd80n02001-datasheets-6262.pdf | 24V | 80A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 | OBSOLETE (Last Updated: 2 days ago) | yes | not_compliant | e0 | Tin/Lead (Sn80Pb20) | GULL WING | 240 | 4 | Single | 30 | 75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 67ns | 40 ns | 28 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 75W Tc | 200A | 0.0058Ohm | 733 mJ | 24V | N-Channel | 2600pF @ 20V | 5.8m Ω @ 80A, 10V | 3V @ 250μA | 80A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLR8113 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8113tr-datasheets-5675.pdf | 30V | 94A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | D-Pak | 2.92nF | 3.8ns | 94A | 30V | 89W Tc | N-Channel | 2920pF @ 15V | 6mOhm @ 15A, 10V | 2.25V @ 250μA | 94A Tc | 32nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP02N60C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spp02n60c3hksa1-datasheets-6298.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 25W Tc | TO-220AB | 1.8A | 5.4A | 3Ohm | 50 mJ | N-Channel | 200pF @ 25V | 3 Ω @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 12.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB09N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb09n03la-datasheets-6301.pdf | 25V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 88ns | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | 0.0151Ohm | 75 mJ | N-Channel | 1642pF @ 15V | 8.9m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6608 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6608-datasheets-6089.pdf | DirectFET™ Isometric ST | 30V | 2.1W Ta 42W Tc | N-Channel | 2120pF @ 15V | 9m Ω @ 13A, 10V | 3V @ 250μA | 13A Ta 55A Tc | 24nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN0300L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-vn0300l-datasheets-6311.pdf | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | O-PBCY-T3 | 200mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 350mW Tc | 0.2A | 25 pF | N-Channel | 100pF @ 15V | 1.2 Ω @ 1A, 10V | 2.5V @ 1mA | 200mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTB85N03T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb85n03t4-datasheets-6313.pdf | 28V | 85A | D2PAK | Contains Lead | 2 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 80W | GULL WING | 240 | 3 | Single | 30 | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 2.15nF | 22ns | 30 ns | 32 ns | 85A | 20V | DRAIN | SWITCHING | N-CHANNEL | 28V | METAL-OXIDE SEMICONDUCTOR | 15A | 45A | 6.1mOhm | 61 mJ | 28V | 6.8 mΩ | |||||||||||||||||||||||||||||||||||||||||
| MTP50P03HDL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mtp50p03hdl-datasheets-6315.pdf | -30V | -50A | TO-220-3 | Contains Lead | 3 | 3 | OBSOLETE (Last Updated: 1 week ago) | no | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | NO | 240 | 3 | Single | 30 | 125W | 1 | Other Transistors | Not Qualified | 2.39V | 340ns | 218 ns | 90 ns | 50A | 15V | SILICON | DRAIN | SWITCHING | 30V | 125W Tc | TO-220AB | 0.025Ohm | 1250 mJ | -30V | P-Channel | 4900pF @ 25V | 25m Ω @ 25A, 5V | 2V @ 250μA | 50A Tc | 100nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||
| VN2222LL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-vn2222ll-datasheets-6317.pdf | 60V | 150mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Contains Lead | 3 | 3 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn80Pb20) | BOTTOM | 240 | 3 | Single | 30 | 400mW | 1 | FET General Purpose Power | Not Qualified | 10 ns | 10 ns | 150mA | 20V | SILICON | SWITCHING | 400mW Ta | 0.15A | 5 pF | 60V | N-Channel | 60pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 1mA | 150mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD13N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf13n03lag-datasheets-2614.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 46W Tc | TO-252AA | 30A | 210A | 0.0128Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 12.8m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSS123LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/onsemiconductor-bss123lt1-datasheets-6323.pdf&product=onsemiconductor-bss123lt1-6858281 | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 225mW | DUAL | GULL WING | 240 | 3 | Single | 30 | 225mW | 1 | FET General Purpose Power | Not Qualified | 40 ns | 170mA | 20V | SWITCHING | 0.17A | 6Ohm | 100V | N-Channel | 20pF @ 25V | 6 Ω @ 100mA, 10V | 2.8V @ 1mA | 170mA Ta | |||||||||||||||||||||||||||||||||||||||||
| MTD6P10E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtd6p10e-datasheets-6326.pdf | -100V | -6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 29ns | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1.75W Ta 50W Tc | 6A | 18A | 0.66Ohm | 180 mJ | P-Channel | 840pF @ 25V | 660m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 22nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| BS170RLRA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-bs170rlra-datasheets-6328.pdf | 60V | 500mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Contains Lead | 3 | 3 | OBSOLETE (Last Updated: 3 days ago) | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn80Pb20) | BOTTOM | 240 | 3 | Single | 30 | 350mW | 1 | FET General Purpose Power | Not Qualified | 500mA | 20V | SILICON | SWITCHING | 350mW Ta | 0.5A | 5Ohm | 60V | N-Channel | 60pF @ 10V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| MMFT960T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mmft960t1-datasheets-6285.pdf | 60V | 300mA | SOT-223-4 | Contains Lead | 4 | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | 800mW | DUAL | GULL WING | 235 | 4 | Single | NOT SPECIFIED | 800mW | 1 | FET General Purpose Power | Not Qualified | 65pF | 300mA | 30V | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-261AA | 0.3A | 1.7Ohm | 60V | 1.7 Ω | ||||||||||||||||||||||||||||||||||||||||||
| IRFU4105ZTRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4105z-datasheets-6029.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30A | 55V | 48W Tc | N-Channel | 740pF @ 25V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX55N50F | IXYS | $3.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx55n50f-datasheets-6230.pdf | 500V | 55A | TO-247-3 | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 20ns | 9.6 ns | 45 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 220A | 0.0085Ohm | 500V | N-Channel | 6700pF @ 25V | 85m Ω @ 27.5A, 10V | 5.5V @ 8mA | 55A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF2807ZL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf2807zstrr-datasheets-6112.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 170W Tc | 75A | 350A | 0.0094Ohm | 200 mJ | N-Channel | 3270pF @ 25V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3710ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3710ztrl-datasheets-6109.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 140W Tc | TO-252AA | 42A | 220A | 0.018Ohm | 150 mJ | N-Channel | 2930pF @ 25V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| MPF990 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mpf960-datasheets-6203.pdf | 90V | 2A | TO-226-3, TO-92-3 (TO-226AA) | Contains Lead | 3 | 3 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 240 | 3 | 30 | 1 | FET General Purpose Power | Not Qualified | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | TO-226AE | 2A | 2Ohm | N-Channel | 70pF @ 25V | 2 Ω @ 1A, 10V | 3.5V @ 1mA | 2A Ta | 10V | ±20V |
