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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 64-9145 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-649145-datasheets-6504.pdf | DirectFET™ Isometric MX | DIRECTFET™ MX | 4.13nF | 150A | 20V | 2.8W Ta 89W Tc | N-Channel | 4130pF @ 10V | 2.7mOhm @ 27A, 10V | 2.45V @ 250μA | 27A Ta 150A Tc | 42nC @ 4.5V | 2.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6609 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6609-datasheets-6487.pdf | 20V | 31A | DirectFET™ Isometric MT | Lead Free | 3 | 7 | EAR99 | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NO LEAD | 260 | 30 | 89W | 1 | Not Qualified | R-XBCC-N3 | 95ns | 9.8 ns | 26 ns | 150A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8W Ta 89W Tc | 250A | 0.002Ohm | 240 mJ | 20V | N-Channel | 6290pF @ 10V | 2m Ω @ 31A, 10V | 2.45V @ 250μA | 31A Ta 150A Tc | 69nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF8113 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8113tr-datasheets-6448.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 17.2A | 135A | 0.0056Ohm | 48 mJ | N-Channel | 2910pF @ 15V | 5.6m Ω @ 17.2A, 10V | 2.2V @ 250μA | 17.2A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL7833S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | 75A | 600A | 0.0038Ohm | 560 mJ | N-Channel | 4170pF @ 15V | 3.8m Ω @ 38A, 10V | 2.3V @ 250μA | 150A Tc | 47nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STY34NB50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sty34nb50-datasheets-6545.pdf | 500V | 34A | TO-247-3 | Contains Lead | 3 | 247 | EAR99 | AVALANCHE RATED | NOT SPECIFIED | STY34N | 3 | Single | NOT SPECIFIED | 450W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 32ns | 53 ns | 34A | 30V | SILICON | SWITCHING | 450W Tc | 136A | 0.13Ohm | 1000 mJ | 500V | N-Channel | 9100pF @ 25V | 130m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 223nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRLR3714Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 20V | 35W Tc | N-Channel | 560pF @ 10V | 15mOhm @ 15A, 10V | 2.55V @ 250μA | 37A Tc | 7.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMSF3P02HDR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/onsemiconductor-mmsf3p02hdr2g-datasheets-5878.pdf | -20V | -3A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 8 | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 40ns | 97 ns | 110 ns | 5.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 30A | 0.075Ohm | 567 mJ | -20V | P-Channel | 1400pF @ 16V | 75m Ω @ 3A, 10V | 2V @ 250μA | 5.6A Ta | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IRLR7807ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7807ztr-datasheets-6470.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 40W Tc | TO-252AA | 30A | 170A | 0.0138Ohm | 28 mJ | N-Channel | 780pF @ 15V | 13.8m Ω @ 15A, 10V | 2.25V @ 250μA | 43A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF7807ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807ztr-datasheets-6474.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 11A | 0.0138Ohm | N-Channel | 770pF @ 15V | 13.8m Ω @ 11A, 10V | 2.25V @ 250μA | 11A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR7843TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-irlr7843tr-datasheets-6479.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | TO-252AA | 30A | 620A | 0.0033Ohm | 1440 mJ | N-Channel | 4380pF @ 15V | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF3711ZCS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6mOhm @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6612TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6612tr1-datasheets-6493.pdf | 30V | 24A | DirectFET™ Isometric MX | Lead Free | No SVHC | 7 | 2.8W | DIRECTFET™ MX | 3.97nF | 52ns | 21 ns | 24A | 20V | 30V | 30V | 2.25V | 2.8W Ta 89W Tc | 19 ns | 2.5Ohm | 30V | N-Channel | 3970pF @ 15V | 2.25 V | 3.3mOhm @ 24A, 10V | 2.25V @ 250μA | 24A Ta 136A Tc | 45nC @ 4.5V | 3.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFU4105Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4105z-datasheets-6029.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 48W Tc | 30A | 120A | 0.0245Ohm | 29 mJ | N-Channel | 740pF @ 25V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTMS10P02R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntms10p02r2g-datasheets-0424.pdf | -20V | -10A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e0 | YES | DUAL | GULL WING | 240 | 8 | Single | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 40ns | 110 ns | 110 ns | 8.8A | 12V | SILICON | SWITCHING | 20V | 1.6W Ta | 4.5A | -20V | P-Channel | 3640pF @ 16V | 14m Ω @ 10A, 4.5V | 1.2V @ 250μA | 8.8A Ta | 70nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| IPF05N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipf05n03lag-datasheets-5680.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 94W Tc | 50A | 350A | 0.0084Ohm | 300 mJ | N-Channel | 3110pF @ 15V | 5.1m Ω @ 30A, 10V | 2V @ 50μA | 50A Tc | 25nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| MTD6N15T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mtd6n15t4-datasheets-6404.pdf | 150V | 6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | no | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | 1.25W | GULL WING | 240 | 3 | Single | 30 | 20W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 200 ns | 6A | 20V | DRAIN | SWITCHING | 6A | 20A | 150V | N-Channel | 1200pF @ 25V | 300m Ω @ 3A, 10V | 4.5V @ 1mA | 6A Tc | 30nC @ 10V | ||||||||||||||||||||||||||||||||
| IRFR3711ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711z-datasheets-6153.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 79W Tc | N-Channel | 2160pF @ 10V | 5.7m Ω @ 15A, 10V | 2.45V @ 250μA | 93A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7831TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 21A | 170A | 0.0036Ohm | 100 mJ | N-Channel | 6240pF @ 15V | 3.6m Ω @ 20A, 10V | 2.35V @ 250μA | 21A Ta | 60nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRF8113TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8113tr-datasheets-6448.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | YES | FET General Purpose Power | Single | 30V | 2.5W Ta | 17.2A | N-Channel | 2910pF @ 15V | 5.6m Ω @ 17.2A, 10V | 2.2V @ 250μA | 17.2A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZCS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | YES | FET General Purpose Power | Single | 30V | 57W Tc | 59A | N-Channel | 1210pF @ 15V | 9.5m Ω @ 21A, 10V | 2.25V @ 250μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | TIN LEAD | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 57W Tc | 59A | 230A | 0.0095Ohm | 40 mJ | N-Channel | 1210pF @ 15V | 9.5m Ω @ 21A, 10V | 2.25V @ 250μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7413ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7413ztr-datasheets-6463.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13A | 100A | 0.01Ohm | 32 mJ | N-Channel | 1210pF @ 15V | 10m Ω @ 13A, 10V | 2.25V @ 250μA | 13A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| MTB50P03HDLT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mtb50p03hdlt4g-datasheets-3135.pdf | -30V | -50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | 2.5W | GULL WING | 240 | 3 | Single | 30 | 125W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 340ns | 218 ns | 90 ns | 50A | 15V | DRAIN | SWITCHING | 30V | 0.025Ohm | 1250 mJ | -30V | P-Channel | 4900pF @ 25V | 25m Ω @ 25A, 5V | 2V @ 250μA | 50A Tc | 100nC @ 5V | |||||||||||||||||||||||||||||||
| MMFT2N02ELT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mmft2n02elt1-datasheets-6409.pdf | 20V | 2A | TO-261-4, TO-261AA | Contains Lead | 4 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | 800mW | DUAL | GULL WING | 4 | 150°C | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-G4 | 73ns | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 0.15Ohm | N-Channel | 580pF @ 15V | 150m Ω @ 800mA, 5V | 2V @ 1mA | 1.6A Ta | 20nC @ 5V | ||||||||||||||||||||||||||||||||||||||||
| MTD6N20ET4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtd6n20et4-datasheets-6415.pdf | 200V | 6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | no | e0 | TIN LEAD | 1.75W | GULL WING | 240 | 3 | Single | 30 | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 29ns | 20 ns | 22 ns | 6A | 20V | DRAIN | SWITCHING | 6A | 18A | 0.7Ohm | 54 mJ | 200V | N-Channel | 480pF @ 25V | 700m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 21nC @ 10V | |||||||||||||||||||||||||||||||
| MMFT2406T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mmft2406t1-datasheets-6417.pdf | 240V | 700mA | TO-261-4, TO-261AA | Contains Lead | 4 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.5W | DUAL | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-G4 | 700mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 0.7A | 6Ohm | N-Channel | 125pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 700mA Tc | |||||||||||||||||||||||||||||||||||||||||
| MGSF1P02LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mgsf1p02lt1-datasheets-6420.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | 750mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 400mW Ta | 0.75A | 0.35Ohm | P-Channel | 130pF @ 5V | 350m Ω @ 1.5A, 10V | 2.4V @ 250μA | 750mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| MTD5P06VT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mtd5p06vt4-datasheets-6398.pdf | -60V | -5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | OBSOLETE (Last Updated: 3 days ago) | no | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | YES | GULL WING | 240 | 3 | Single | 30 | 2.1W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 26ns | 19 ns | 17 ns | 5A | 15V | SILICON | DRAIN | SWITCHING | 60V | 2.1W Ta 40W Tc | 5A | 18A | 0.45Ohm | 125 mJ | -60V | P-Channel | 510pF @ 25V | 450m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||
| MTP2955V | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | /files/onsemiconductor-mtp2955v-datasheets-6342.pdf | -60V | -12A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 60W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 100ns | 80 ns | 50 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60W Tc | TO-220AB | 42A | 0.23Ohm | -60V | P-Channel | 770pF @ 25V | 230m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 30nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||
| MTP36N06V | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtp36n06v-datasheets-6344.pdf | 60V | 32A | TO-220-3 | Contains Lead | 3 | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | 138ns | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90W Tc | TO-220AB | 112A | 0.04Ohm | 205 mJ | N-Channel | 1700pF @ 25V | 40m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 50nC @ 10V | 10V | ±20V |
