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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCPF9N60NTYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp9n60n-datasheets-9296.pdf | TO-220-3 Full Pack, Formed Leads | 12 Weeks | 2.565g | ACTIVE (Last Updated: 3 weeks ago) | yes | Single | 9A | 600V | 29.8W Tc | N-Channel | 1240pF @ 100V | 385m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R160P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r160p6xksa1-datasheets-1896.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 23.8A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 176W Tc | 68A | 0.16Ohm | 497 mJ | N-Channel | 2080pF @ 100V | 160m Ω @ 9A, 10V | 4.5V @ 750μA | 23.8A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA60R299CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r299cpxksa1-datasheets-3704.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 33W Tc | TO-220AB | 11A | 34A | 0.299Ohm | 290 mJ | N-Channel | 1100pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFI3306GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfi3306gpbf-datasheets-3712.pdf | TO-220-3 Full Pack | 15 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 71A | Single | 60V | 4V | 46W Tc | N-Channel | 4685pF @ 50V | 4.2m Ω @ 43A, 10V | 4V @ 150μA | 71A Tc | 135nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7A60W,S4VX | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 490pF | 16 Weeks | Single | 30W | TO-220SIS | 490pF | 18ns | 7 ns | 55 ns | 7A | 30V | 600V | 30W Tc | 500mOhm | 600V | N-Channel | 490pF @ 300V | 600mOhm @ 3.5A, 10V | 3.7V @ 350μA | 7A Ta | 15nC @ 10V | Super Junction | 600 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3006GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfb3006gpbf-datasheets-3720.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 16 Weeks | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 182ns | 189 ns | 118 ns | 270mA | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-220AB | 195A | 1080A | 0.0025Ohm | 60V | N-Channel | 8970pF @ 50V | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 195A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTMFS5H414NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5h414nlt1g-datasheets-3514.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 110W Tc | N-Channel | 4550pF @ 20V | 1.4m Ω @ 20A, 10V | 2V @ 250μA | 35A Ta 210A Tc | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3800VR | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/sanken-2sk3800-datasheets-3593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | unknown | 70A | 40V | 80W Tc | N-Channel | 5100pF @ 10V | 6m Ω @ 35A, 10V | 4V @ 1mA | 70A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1405ZL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirf1405zstrl-datasheets-1367.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 230W | 1 | FET General Purpose Power | 18 ns | 110ns | 82 ns | 48 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 2V | 230W Tc | 600A | 0.0049Ohm | 270 mJ | 55V | N-Channel | 4780pF @ 25V | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 150A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB031NE7N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb031ne7n3gatma1-datasheets-3499.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 214W | 1 | Not Qualified | R-PSSO-G2 | 16 ns | 85ns | 10 ns | 40 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 214W Tc | 400A | 640 mJ | N-Channel | 8130pF @ 37.5V | 3.1m Ω @ 100A, 10V | 3.8V @ 155μA | 100A Tc | 117nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| 2SK3800 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/sanken-2sk3800-datasheets-3593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 70A | SILICON | SINGLE | 40V | 40V | 80W Tc | 140A | 6Ohm | 400 mJ | N-Channel | 5100pF @ 10V | 6m Ω @ 35A, 10V | 4V @ 1mA | 70A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMS5360L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms5360lf085-datasheets-3517.pdf | 8-PowerTDFN | 5 | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 150W Tc | 60A | 0.0105Ohm | 115 mJ | N-Channel | 3695pF @ 30V | 8.5m Ω @ 60A, 10V | 3V @ 250μA | 60A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP120N08S404AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi120n08s404aksa1-datasheets-8800.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 179W Tc | TO-220AB | 480A | 0.0044Ohm | 310 mJ | N-Channel | 6450pF @ 25V | 4.4m Ω @ 100A, 10V | 4V @ 120μA | 120A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFA7N80P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 800V | 200W Tc | N-Channel | 1800pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 7A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTPF150N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntpf150n65s3hf-datasheets-3611.pdf | TO-220-3 Full Pack | 12 Weeks | yes | e3 | Tin (Sn) | 650V | 192W Tc | N-Channel | 1985pF @ 400V | 150m Ω @ 12A, 10V | 5V @ 540μA | 24A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP2N65X2 | IXYS | $2.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixty2n65x2-datasheets-9221.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 2A | 650V | 55W Tc | N-Channel | 180pF @ 25V | 2.3 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 4.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI120N10S405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb120n10s405atma1-datasheets-8791.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15 ns | 10ns | 35 ns | 30 ns | 120A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 190W Tc | 480A | N-Channel | 6540pF @ 25V | 5.3m Ω @ 100A, 10V | 3.5V @ 120μA | 120A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUD40N10-25-T4-E3 | Vishay Siliconix | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud40n1025e3-datasheets-2374.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | 3 | TO-252, (D-Pak) | 2.4nF | 8 ns | 40ns | 80 ns | 15 ns | 40A | 20V | 100V | 3W Ta 136W Tc | N-Channel | 2400pF @ 25V | 25mOhm @ 40A, 10V | 3V @ 250μA | 40A Tc | 60nC @ 10V | 25 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB292L | Alpha & Omega Semiconductor Inc. | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 6.775nF | 105A | 100V | 2.1W Ta 300W Tc | N-Channel | 6775pF @ 50V | 4.1mOhm @ 20A, 10V | 2.2V @ 250μA | 14.5A Ta 105A Tc | 126nC @ 10V | 4.1 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7430PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs7430trlpbf-datasheets-6167.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 195A | Single | 40V | 3.9V | 375W Tc | N-Channel | 14240pF @ 25V | 1.2m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 460nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2LH5ATMA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s2lh5atma4-datasheets-3553.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | GULL WING | Single | 300W | 1 | R-PSSO-G2 | 19 ns | 23ns | 22 ns | 75 ns | 80A | 20V | 55V | SILICON | DRAIN | 300W Tc | 0.0062Ohm | 700 mJ | 55V | N-Channel | 5000pF @ 25V | 4.7m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 190nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AOB482L | Alpha & Omega Semiconductor Inc. | $3.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 333W | 1 | 105A | 25V | 80V | 2.1W Ta 333W Tc | N-Channel | 4870pF @ 40V | 6.9m Ω @ 20A, 10V | 3.7V @ 250μA | 11A Ta 105A Tc | 81nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7374DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7374dpt1ge3-datasheets-3569.pdf | PowerPAK® SO-8 | 14 Weeks | 506.605978mg | No | 1 | PowerPAK® SO-8 | 5.5nF | 10 ns | 23.8A | 20V | 30V | 5W Ta 56W Tc | 5.5mOhm | N-Channel | 5500pF @ 15V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250μA | 24A Tc | 122nC @ 10V | 5.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7374DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7374dpt1ge3-datasheets-3569.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 15ns | 10 ns | 42 ns | 24A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 56W Tc | 23.8A | 0.0055Ohm | 30V | N-Channel | 5500pF @ 15V | 5.5m Ω @ 23.8A, 10V | 2.8V @ 250μA | 24A Tc | 122nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| 2SK2701A | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-2sk2701a-datasheets-3573.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 7A | SILICON | SINGLE | ISOLATED | 450V | 450V | 35W Tc | TO-220AB | 7A | 28A | 130 mJ | N-Channel | 720pF @ 10V | 1.1 Ω @ 3.5A, 10V | 4V @ 1μA | 7A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R180P6AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r180p6auma1-datasheets-3530.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | EAR99 | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 12.5 ns | 7.6ns | 5.8 ns | 40 ns | 22.4A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 176W Tc | 62A | 0.18Ohm | N-Channel | 2080pF @ 100V | 180m Ω @ 9A, 10V | 4.5V @ 750μA | 22.4A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FKP253 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-fkp253-datasheets-3481.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 20A | SILICON | SINGLE | 250V | 250V | 40W Tc | TO-220AB | 80A | 0.095Ohm | 160 mJ | N-Channel | 1600pF @ 25V | 95m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA029N06NXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipa029n06nxksa1-datasheets-3484.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 16 ns | 15ns | 11 ns | 30 ns | 84A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 38W Tc | TO-220AB | 0.0029Ohm | 140 mJ | N-Channel | 5125pF @ 30V | 2.9m Ω @ 84A, 10V | 3.3V @ 75μA | 84A Tc | 66nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TN2640LG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2640k4g-datasheets-3840.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.9mm | 8 | 5 Weeks | 84.99187mg | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 40 | 1.3W | 1 | FET General Purpose Power | Not Qualified | 4 ns | 15ns | 15 ns | 20 ns | 260mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.3W Ta | 0.26A | 5Ohm | 400V | N-Channel | 225pF @ 25V | 5 Ω @ 500mA, 10V | 2V @ 2mA | 260mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK10A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.05nF | 25ns | 10 ns | 75 ns | 10A | 30V | 500V | 45W Tc | 620mOhm | 500V | N-Channel | 1050pF @ 25V | 720mOhm @ 5A, 10V | 4V @ 1mA | 10A Ta | 20nC @ 10V | 720 mΩ | 10V | ±30V |
