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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPA65R225C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r225c7xksa1-datasheets-3132.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 9 ns | 6ns | 10 ns | 48 ns | 7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 29W Tc | TO-220AB | 7A | 41A | 0.225Ohm | 48 mJ | N-Channel | 996pF @ 400V | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 7A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFB3256PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfb3256pbf-datasheets-3137.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | 3 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 22 ns | 77ns | 64 ns | 55 ns | 75A | 4V | Single | 300W Tc | 60V | N-Channel | 6600pF @ 48V | 3.4m Ω @ 75A, 10V | 4V @ 150μA | 75A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2943 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/sanken-2sk2943-datasheets-3144.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | UL APPROVED | unknown | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | 900V | 900V | 30W Tc | TO-220AB | 3A | 12A | 5Ohm | 60 mJ | N-Channel | 600pF @ 10V | 5 Ω @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPA65R280C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r280c6xksa1-datasheets-3147.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | Halogen Free | Single | 32W | TO-220 Full Pack | 950pF | 13 ns | 11ns | 12 ns | 105 ns | 13.8A | 20V | 650V | 32W Tc | 280mOhm | 700V | N-Channel | 950pF @ 100V | 280mOhm @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA050N10NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa050n10nm5sxksa1-datasheets-3154.pdf | TO-220-3 Full Pack | 13 Weeks | 100V | 38W Tc | N-Channel | 4700pF @ 50V | 5m Ω @ 33A, 10V | 3.8V @ 84μA | 66A Tc | 68nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R5-80ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn3r580es127-datasheets-3162.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 20 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 41 ns | 43ns | 44 ns | 109 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | 676 mJ | 80V | N-Channel | 9800pF @ 30V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 139nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPI120N04S402AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb120n04s402atma1-datasheets-8226.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 27 ns | 16ns | 30 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 158W Tc | 480A | 0.0021Ohm | 480 mJ | N-Channel | 10740pF @ 25V | 2.1m Ω @ 100A, 10V | 4V @ 110μA | 120A Tc | 134nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| RJK1003DPN-E0#T2 | Renesas Electronics America | $27.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk1003dpne0t2-datasheets-3107.pdf | TO-220-3 | 16 Weeks | NOT SPECIFIED | 4 | NOT SPECIFIED | 50A | 100V | 125W Tc | N-Channel | 4150pF @ 10V | 11m Ω @ 25A, 10V | 50A Ta | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3D5N08LC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-fdms3d5n08lc-datasheets-3110.pdf | 8-PowerTDFN | 20 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | N-Channel | 3.5m Ω @ 45A, 10V | 2.5V @ 250μA | 19A Ta 136A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK9A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $4.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 800pF | 20ns | 12 ns | 9A | 30V | 450V | 40W Tc | N-Channel | 800pF @ 25V | 770mOhm @ 4.5A, 10V | 4V @ 1mA | 9A Ta | 16nC @ 10V | 770 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R170CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r170cfd7atma1-datasheets-3112.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 600V | 75W Tc | N-Channel | 1190pF @ 400V | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 14A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF6215STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf6215strl-datasheets-3042.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 3.8W | 1 | Other Transistors | R-PSSO-G2 | 14 ns | 36ns | 37 ns | 53 ns | 13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 3.8W Ta 110W Tc | 44A | 0.29Ohm | -150V | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NVMFS6H800NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h800nlt1g-datasheets-3113.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.9W Ta 214W Tc | N-Channel | 6900pF @ 40V | 1.9m Ω @ 50A, 10V | 2V @ 330μA | 30A Ta 224A Tc | 112nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF290N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf290n80-datasheets-3047.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 2.27g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 17A | SILICON | ISOLATED | SWITCHING | 800V | 800V | 40W Tc | TO-220AB | 42A | 0.29Ohm | 882 mJ | N-Channel | 3205pF @ 100V | 290m Ω @ 8.5A, 10V | 4.5V @ 1.7mA | 17A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK16V60W,LVQ | Toshiba Semiconductor and Storage | $3.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 4-VSFN Exposed Pad | 5 | No | 1 | 50 ns | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 139W Tc | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5A160PLZT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs5a160plzwft3g-datasheets-8931.pdf | 8-PowerTDFN, 5 Leads | 5 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.8W Ta 200W Tc | 400A | 0.0105Ohm | 335 mJ | P-Channel | 7700pF @ 20V | 7.7m Ω @ 50A, 10V | 2.6V @ 1mA | 15A Ta 100A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC034N10LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc034n10ls5atma1-datasheets-3059.pdf | 8-PowerTDFN | 26 Weeks | 100V | 2.5W Ta 156W Tc | N-Channel | 6500pF @ 50V | 3.4m Ω @ 50A, 10V | 2.3V @ 115μA | 19A Ta 100A Tc | 46nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP24N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 24A | 150V | N-Channel | 24A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUC100N08S5N031ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-iauc100n08s5n031atma1-datasheets-3060.pdf | 8-PowerTDFN | 16 Weeks | compliant | 80V | 167W Tc | N-Channel | 5525pF @ 40V | 3.1m Ω @ 50A, 10V | 3.8V @ 95μA | 100A Tc | 76nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB15S65L | Alpha & Omega Semiconductor Inc. | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob15s65l-datasheets-4543.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 15A | 650V | 208W Tc | N-Channel | 841pF @ 100V | 290m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB8N90CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb8n90ctm-datasheets-2935.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 11 Weeks | 1.31247g | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 40 ns | 110ns | 70 ns | 70 ns | 6.3A | 30V | SILICON | DRAIN | SWITCHING | 171W Tc | 25A | 850 mJ | 900V | N-Channel | 2080pF @ 25V | 1.9 Ω @ 3.15A, 10V | 5V @ 250μA | 6.3A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF9530STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf9530spbf-datasheets-9674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 52ns | 39 ns | 31 ns | -12A | 20V | SILICON | DRAIN | SWITCHING | 100V | 3.7W Ta 88W Tc | 48A | 400 mJ | P-Channel | 860pF @ 25V | 300m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK6A65W,S5X | Toshiba Semiconductor and Storage | $6.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 390pF | 5.8A | 650V | 30W Tc | N-Channel | 390pF @ 300V | 1Ohm @ 2.9A, 10V | 3.5V @ 180μA | 5.8A Ta | 11nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3307ZTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb3307zpbf-datasheets-3788.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 230W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 64ns | 65 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 480A | 0.0058Ohm | 75V | N-Channel | 4750pF @ 50V | 5.8m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLR110TR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 49 Weeks | 3 | No | Single | D-Pak | 250pF | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | 100V | 2.5W Ta 25W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5A140PLZT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs5a140plzwft3g-datasheets-9034.pdf | 8-PowerTDFN, 5 Leads | 5 | 39 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 200W Tc | 140A | 560A | 7.2Ohm | 420 mJ | P-Channel | 7400pF @ 20V | 4.2m Ω @ 50A, 10V | 2.6V @ 1mA | 20A Ta 140A Tc | 136nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQPF22N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf22n30-datasheets-3024.pdf | 300V | 12A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 56W | 1 | FET General Purpose Power | 35 ns | 230ns | 100 ns | 85 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 56W Tc | 48A | 300V | N-Channel | 2200pF @ 25V | 160m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FQB34N20TM-AM002 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb34n20tmam002-datasheets-2912.pdf | 200V | 31A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 21 hours ago) | yes | Tin | not_compliant | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.13W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 40 ns | 280ns | 115 ns | 125 ns | 31A | 30V | SILICON | DRAIN | SWITCHING | 3.13W Ta 180W Tc | 0.075Ohm | 640 mJ | 200V | N-Channel | 3100pF @ 25V | 75m Ω @ 15.5A, 10V | 5V @ 250μA | 31A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| NVMFS5C404NWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c404nt1g-datasheets-7136.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.9W Ta 200W Tc | N-Channel | 8400pF @ 25V | 0.7m Ω @ 50A, 10V | 4V @ 250μA | 53A Ta 378A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfsl8405-datasheets-8942.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | 1 | Single | 163W | FET General Purpose Power | 14 ns | 128ns | 77 ns | 55 ns | 120A | 20V | 3V | 163W Tc | 40V | N-Channel | 5193pF @ 25V | 3 V | 2.3m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 161nC @ 10V | 10V | ±20V |
