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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP60R210CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD95NH02LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std95nh02lt4-datasheets-3073.pdf | 30V | 80A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 5mOhm | EAR99 | LOW THRESHOLD | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | STD95 | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 110ns | 20 ns | 47 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 320A | 600 mJ | 24V | N-Channel | 2070pF @ 15V | 5m Ω @ 40A, 10V | 1V @ 250μA | 80A Tc | 17nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDB070AN06A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb070an06a0f085-datasheets-3320.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 33 Weeks | yes | YES | FET General Purpose Power | Single | 60V | 175W Tc | 15A | N-Channel | 3000pF @ 25V | 7m Ω @ 80A, 10V | 4V @ 250μA | 15A Ta | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6Q60W,S1VQ | Toshiba Semiconductor and Storage | $1.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 390pF | 16 Weeks | 820mOhm | 3 | Single | 18ns | 7 ns | 55 ns | 6.2A | 30V | 600V | 60W Tc | N-Channel | 390pF @ 300V | 820m Ω @ 3.1A, 10V | 3.7V @ 310μA | 6.2A Ta | 12nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3607TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs3607trl-datasheets-3350.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 140W Tc | 80A | 310A | 0.009Ohm | 120 mJ | N-Channel | 3070pF @ 50V | 9m Ω @ 46A, 10V | 4V @ 100μA | 80A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK11A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $7.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 11A | 30V | 450V | 40W Tc | N-Channel | 1050pF @ 25V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 11A Ta | 20nC @ 10V | 620 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R210CFDAUMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r210cfdauma2-datasheets-3356.pdf | 4-PowerTSFN | 18 Weeks | 650V | 151W Tc | N-Channel | 1850pF @ 100V | 210m Ω @ 7.3A, 10V | 4.5V @ 700μA | 16.6A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP190N60-GF102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp190n60gf102-datasheets-3358.pdf | TO-220-3 | 12 Weeks | yes | NO | FET General Purpose Power | Single | 600V | 208W Tc | 20.2A | N-Channel | 2950pF @ 25V | 199m Ω @ 10A, 10V | 3.5V @ 250μA | 20.2A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N08S2L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp100n08s2l07aksa1-datasheets-5912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 19 ns | 56ns | 22 ns | 85 ns | 100A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.0087Ohm | 810 mJ | N-Channel | 5400pF @ 25V | 6.5m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 246nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK8Q65W,S1Q | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-251-3 Stub Leads, IPak | 16 Weeks | I-PAK | 570pF | 7.8A | 650V | 80W Tc | N-Channel | 570pF @ 300V | 670mOhm @ 3.9A, 10V | 3.5V @ 300μA | 7.8A Ta | 16nC @ 10V | 670 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STK800 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stk800-datasheets-2710.pdf | 30V | 20A | PolarPak® | Lead Free | 4 | No SVHC | 7.8mOhm | 10 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | DUAL | NO LEAD | 260 | STK8 | 10 | 40 | 5.2W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N4 | 50ns | 15 ns | 45 ns | 20A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 2.5V | 5.2W Tc | 80A | 30V | N-Channel | 1380pF @ 25V | 2.5 V | 7.8m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 13.4nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| IPB50R199CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb50r199cpatma1-datasheets-3378.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 8 Weeks | 3 | no | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 139W | 1 | R-PSSO-G2 | 35 ns | 14ns | 10 ns | 80 ns | 17A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 139W Tc | 40A | N-Channel | 1800pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| TK10J80E,S1E | Toshiba Semiconductor and Storage | $5.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-3P-3, SC-65-3 | 16 Weeks | 6.961991g | 1 | Single | TO-3P(N) | 2nF | 80 ns | 40ns | 35 ns | 140 ns | 10A | 30V | 800V | 250W Tc | 700mOhm | N-Channel | 2000pF @ 25V | 1Ohm @ 5A, 10V | 4V @ 1mA | 10A Ta | 46nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12Q60W,S1VQ | Toshiba Semiconductor and Storage | $7.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-251-3 Stub Leads, IPak | 890pF | 12 Weeks | 340mOhm | 3 | Single | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 100W Tc | 600V | N-Channel | 890pF @ 300V | 340m Ω @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF47P06YDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-fqpf47p06-datasheets-0432.pdf | TO-220-3 Full Pack, Formed Leads | Lead Free | 6 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 62W | Other Transistors | 50 ns | 450ns | 195 ns | 100 ns | 30A | 25V | 60V | 62W Tc | -60V | P-Channel | 3600pF @ 25V | 26m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 110nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A60DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.05nF | 25ns | 10 ns | 7.5A | 30V | 600V | 45W Tc | N-Channel | 1050pF @ 25V | 1Ohm @ 4A, 10V | 4V @ 1mA | 7.5A Ta | 20nC @ 10V | 1 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH45M7SCT | Diodes Incorporated | $1.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 240W Tc | N-Channel | 4043pF @ 20V | 6m Ω @ 20A, 10V | 3V @ 250μA | 220A Tc | 64.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n80-datasheets-3285.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 25W | 1 | Not Qualified | R-PSSO-G2 | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 25W Tc | TO-252AA | 0.1A | 0.4A | 800V | N-Channel | 60pF @ 25V | 50 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C410NLTWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c410nltt3g-datasheets-9207.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 167W Tc | 330A | 900A | 0.0012Ohm | 706 mJ | N-Channel | 8862pF @ 25V | 0.9m Ω @ 50A, 10V | 2V @ 250μA | 50A Ta 330A Tc | 143nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQM200N04-1M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm200n041m8ge3-datasheets-3289.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 375W Tc | 200A | 600A | 0.0018Ohm | 361 mJ | N-Channel | 17350pF @ 25V | 1.8m Ω @ 30A, 10V | 3.5V @ 250μA | 200A Tc | 310nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7530PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb7530pbf-datasheets-0453.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | 52 ns | 141ns | 104 ns | 172 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 3.7V | 375W Tc | 760A | 0.002Ohm | 60V | N-Channel | 13703pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 411nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFB11N50APBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 500V | 11A | TO-220-3 | Lead Free | 170W | TO-220AB | 11A | 500V | 170W Tc | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC18N60CFDX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA2N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 86W Tc | N-Channel | 655pF @ 25V | 7.5 Ω @ 1A, 10V | 4.5V @ 100μA | 2A Tc | 24.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C406NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | RoHS Compliant | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCSPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n100p-datasheets-1536.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 55 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 50W Tc | TO-252AA | 1A | 1.8A | 100 mJ | 1kV | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA60R210CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP90N055T2 | IXYS | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp90n055t2-datasheets-3301.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 21ns | 19 ns | 39 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 230A | 0.0084Ohm | 300 mJ | 55V | N-Channel | 2770pF @ 25V | 8.4m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| HUF75639S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75639p3-datasheets-4015.pdf | 100V | 56A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 9 Weeks | 2.084g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 200W | 1 | FET General Purpose Power | R-PSIP-T3 | 15 ns | 60ns | 25 ns | 20 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 0.025Ohm | 100V | N-Channel | 2000pF @ 25V | 25m Ω @ 56A, 10V | 4V @ 250μA | 56A Tc | 130nC @ 20V | 10V | ±20V |
