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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPA60R210CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP90N055T2 | IXYS | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp90n055t2-datasheets-3301.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 21ns | 19 ns | 39 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 230A | 0.0084Ohm | 300 mJ | 55V | N-Channel | 2770pF @ 25V | 8.4m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| HUF75639S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75639p3-datasheets-4015.pdf | 100V | 56A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 9 Weeks | 2.084g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 200W | 1 | FET General Purpose Power | R-PSIP-T3 | 15 ns | 60ns | 25 ns | 20 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 0.025Ohm | 100V | N-Channel | 2000pF @ 25V | 25m Ω @ 56A, 10V | 4V @ 250μA | 56A Tc | 130nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI032N06N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp032n06n3gxksa1-datasheets-3646.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 11.177mm | 4.572mm | Contains Lead | 3 | 18 Weeks | 3 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3 | Single | 188W | 1 | 35 ns | 120ns | 20 ns | 62 ns | 120A | 20V | 60V | SILICON | SWITCHING | 188W Tc | 480A | 60V | N-Channel | 13000pF @ 30V | 3.2m Ω @ 100A, 10V | 4V @ 118μA | 120A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFS33N15DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | 150V | 33A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 13 ns | 38ns | 21 ns | 23 ns | 33A | 30V | SILICON | DRAIN | SWITCHING | 3.8W Ta 170W Tc | 0.056Ohm | 150V | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK20A60W5,S5VX | Toshiba Semiconductor and Storage | $4.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.8nF | 90 ns | 45ns | 6 ns | 100 ns | 20A | 30V | 600V | 45W Tc | 150mOhm | 600V | N-Channel | 1800pF @ 300V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 55nC @ 10V | 175 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS6535 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfsl6535-datasheets-2914.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 3 | EAR99 | Tin | No | 210W | 1 | FET General Purpose Power | 15 ns | 16ns | 10 ns | 22 ns | 19A | 20V | Single | 210W Tc | 300V | N-Channel | 2340pF @ 25V | 185m Ω @ 11A, 10V | 5V @ 150μA | 19A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R185C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r185c7auma1-datasheets-3208.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | 1 | 13A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 77W Tc | 0.185Ohm | 53 mJ | N-Channel | 1080pF @ 400V | 185m Ω @ 5.3A, 10V | 4V @ 260μA | 13A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N08S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp120n08s403aksa1-datasheets-6454.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 30 ns | 15ns | 50 ns | 60 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 278W Tc | 480A | 0.0025Ohm | 920 mJ | N-Channel | 11550pF @ 25V | 2.5m Ω @ 100A, 10V | 4V @ 223μA | 120A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPLU250N04S41R7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-iplu250n04s41r7xtma1-datasheets-3219.pdf | 8-PowerSFN | Lead Free | 2 | 20 Weeks | 8 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-F2 | 250A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 188W Tc | 1000A | 0.0012Ohm | 170 mJ | N-Channel | 7900pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 80μA | 250A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R250CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r250cpxksa1-datasheets-3225.pdf | TO-220 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 40 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 114W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 114W | 1 | Not Qualified | 1.42nF | 35 ns | 14ns | 11 ns | 80 ns | 13A | 20V | 500V | ISOLATED | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 250mOhm | 500V | 250 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP150A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-irfp150a-datasheets-3228.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 7 Weeks | 6.401g | 40MOhm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 193W | 1 | 17 ns | 20ns | 45 ns | 80 ns | 43A | 20V | SILICON | SWITCHING | 193W Tc | 740 mJ | 100V | N-Channel | 2270pF @ 25V | 40m Ω @ 21.5A, 10V | 4V @ 250μA | 43A Tc | 97nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $8.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 800pF | 20ns | 12 ns | 7.5A | 30V | 550V | 40W Tc | N-Channel | 800pF @ 25V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 7.5A Ta | 16nC @ 10V | 1.07 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS41N15DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb41n15dpbf-datasheets-1190.pdf | 150V | 41A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 45MOhm | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.1W | 1 | Not Qualified | R-PSSO-G2 | 16 ns | 63ns | 14 ns | 25 ns | 41A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5.5V | 3.1W Ta | 164A | 470 mJ | 150V | N-Channel | 2520pF @ 25V | 5.5 V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FCPF125N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-fcpf125n65s3-datasheets-3247.pdf | TO-220-3 Full Pack | 12 Weeks | 2.27g | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 38W Tc | N-Channel | 1790pF @ 400V | 125m Ω @ 12A, 10V | 4.5V @ 2.4mA | 24A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S303AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s303atma1-datasheets-8734.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 188W Tc | 80A | 320A | 0.0035Ohm | 526 mJ | N-Channel | 7300pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 120μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C410NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-ntmfs5c410nt1g-datasheets-6675.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 46A Ta 300A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10V60W,LVQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 4-VSFN Exposed Pad | 16 Weeks | 5 | No | 1 | 4-DFN-EP (8x8) | 700pF | 45 ns | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 600V | 88.3W Tc | 380mOhm | 600V | N-Channel | 700pF @ 300V | 380mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ70H600SH3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h600sh3-datasheets-3190.pdf | TO-251-3, IPak, Short Leads | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 700V | 113W Tc | N-Channel | 643pF @ 25V | 600m Ω @ 2.4A, 10V | 4V @ 250μA | 11A Tc | 18.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4951NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 2 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF17N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf17n60nt-datasheets-3119.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 62.5W | 1 | FET General Purpose Power | 48 ns | 79ns | 62 ns | 128 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 62.5W Tc | TO-220AB | 68A | 600V | N-Channel | 3040pF @ 25V | 340m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| DMG9N65CT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmg9n65ct-datasheets-3123.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | No SVHC | 3 | no | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | 1 | 40 | 1 | 39 ns | 29ns | 28 ns | 122 ns | 9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 165W Tc | TO-220AB | 9A | 650V | N-Channel | 2310pF @ 25V | 1.3 Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R195C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipl65r195c7auma1-datasheets-3125.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 12A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75W Tc | 0.195Ohm | 57 mJ | N-Channel | 1150pF @ 400V | 195m Ω @ 2.9A, 10V | 4V @ 290μA | 12A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R225C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r225c7xksa1-datasheets-3132.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 9 ns | 6ns | 10 ns | 48 ns | 7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 29W Tc | TO-220AB | 7A | 41A | 0.225Ohm | 48 mJ | N-Channel | 996pF @ 400V | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 7A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3256PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfb3256pbf-datasheets-3137.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | 3 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 22 ns | 77ns | 64 ns | 55 ns | 75A | 4V | Single | 300W Tc | 60V | N-Channel | 6600pF @ 48V | 3.4m Ω @ 75A, 10V | 4V @ 150μA | 75A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2943 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/sanken-2sk2943-datasheets-3144.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | UL APPROVED | unknown | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | 900V | 900V | 30W Tc | TO-220AB | 3A | 12A | 5Ohm | 60 mJ | N-Channel | 600pF @ 10V | 5 Ω @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R280C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r280c6xksa1-datasheets-3147.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | Halogen Free | Single | 32W | TO-220 Full Pack | 950pF | 13 ns | 11ns | 12 ns | 105 ns | 13.8A | 20V | 650V | 32W Tc | 280mOhm | 700V | N-Channel | 950pF @ 100V | 280mOhm @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA050N10NM5SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™5 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa050n10nm5sxksa1-datasheets-3154.pdf | TO-220-3 Full Pack | 13 Weeks | 100V | 38W Tc | N-Channel | 4700pF @ 50V | 5m Ω @ 33A, 10V | 3.8V @ 84μA | 66A Tc | 68nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R5-80ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn3r580es127-datasheets-3162.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 20 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 41 ns | 43ns | 44 ns | 109 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | 676 mJ | 80V | N-Channel | 9800pF @ 30V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2903ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf2903zpbf-datasheets-3165.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 290W | 1 | FET General Purpose Power | 24 ns | 100ns | 37 ns | 48 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 290W Tc | TO-220AB | 51 ns | 260A | 0.0024Ohm | 820 mJ | 30V | N-Channel | 6320pF @ 25V | 4 V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 75A Tc | 240nC @ 10V | 10V | ±20V |
