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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCP400N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp400n80z-datasheets-3465.pdf | TO-220-3 | 14 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 14A | 800V | 4.5V | 195W Tc | N-Channel | 2350pF @ 1000V | 400m Ω @ 5.5A, 10V | 4.5V @ 1.1mA | 14A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N08S207AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipi80n08s207aksa1-datasheets-8578.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 26 ns | 50ns | 30 ns | 61 ns | 80A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 0.0074Ohm | 810 mJ | N-Channel | 4700pF @ 25V | 7.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NVMFS6H800NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h800nlt1g-datasheets-3113.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.9W Ta 214W Tc | N-Channel | 6900pF @ 40V | 1.9m Ω @ 50A, 10V | 2V @ 330μA | 30A Ta 224A Tc | 112nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FKP253 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-fkp253-datasheets-3481.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 20A | SILICON | SINGLE | 250V | 250V | 40W Tc | TO-220AB | 80A | 0.095Ohm | 160 mJ | N-Channel | 1600pF @ 25V | 95m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPA029N06NXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipa029n06nxksa1-datasheets-3484.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 16 ns | 15ns | 11 ns | 30 ns | 84A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 38W Tc | TO-220AB | 0.0029Ohm | 140 mJ | N-Channel | 5125pF @ 30V | 2.9m Ω @ 84A, 10V | 3.3V @ 75μA | 84A Tc | 66nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| TN2640LG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn2640k4g-datasheets-3840.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.9mm | 8 | 5 Weeks | 84.99187mg | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 40 | 1.3W | 1 | FET General Purpose Power | Not Qualified | 4 ns | 15ns | 15 ns | 20 ns | 260mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.3W Ta | 0.26A | 5Ohm | 400V | N-Channel | 225pF @ 25V | 5 Ω @ 500mA, 10V | 2V @ 2mA | 260mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK10A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.05nF | 25ns | 10 ns | 75 ns | 10A | 30V | 500V | 45W Tc | 620mOhm | 500V | N-Channel | 1050pF @ 25V | 720mOhm @ 5A, 10V | 4V @ 1mA | 10A Ta | 20nC @ 10V | 720 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB240N03S4LR9ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb240n03s4lr9atma1-datasheets-3504.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 16 Weeks | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 240A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 231W Tc | 960A | 0.00145Ohm | 750 mJ | N-Channel | 20300pF @ 25V | 0.92m Ω @ 100A, 10V | 2.2V @ 180μA | 240A Tc | 300nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IRFBC30SPBF | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc30strlpbf-datasheets-6482.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | Tin | No | 1 | Single | 3.1W | 1 | D2PAK | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 3.6A | 20V | 600V | 3.1W Ta 74W Tc | 2.2Ohm | N-Channel | 660pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD60R145CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA80N10T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 100V | 230W Tc | N-Channel | 3040pF @ 25V | 14m Ω @ 25A, 10V | 5V @ 100μA | 80A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C404NWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c404nt1g-datasheets-7136.pdf | 8-PowerTDFN, 5 Leads | 14 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 200W Tc | N-Channel | 8400pF @ 25V | 0.7m Ω @ 50A, 10V | 4V @ 250μA | 53A Ta 378A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R5-40ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn1r540es127-datasheets-3543.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 20 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 45 ns | 66ns | 53 ns | 111 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | 40V | N-Channel | 9710pF @ 20V | 1.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 136nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4838DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4838dyt1e3-datasheets-5769.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 40 ns | 40ns | 70 ns | 140 ns | 17A | 8V | SILICON | 12V | 1.6W Ta | 0.003Ohm | N-Channel | 3m Ω @ 25A, 4.5V | 600mV @ 250μA (Min) | 17A Ta | 60nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| IPL65R210CFDAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipl65r210cfdauma2-datasheets-3356.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 16.6A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 151W Tc | 53A | 0.21Ohm | N-Channel | 1850pF @ 100V | 210m Ω @ 7.3A, 10V | 4.5V @ 700μA | 16.6A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDB9406L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdb9406lf085-datasheets-3395.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 33 Weeks | 1.31247g | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | Single | 40V | 176W Tj | N-Channel | 8600pF @ 20V | 1.5m Ω @ 80A, 10V | 3V @ 250μA | 110A Tc | 170nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI600N25N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp600n25n3gxksa1-datasheets-0448.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 136W | 1 | Not Qualified | R-PSIP-T3 | 10 ns | 8 ns | 22 ns | 25A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 136W Tc | 0.06Ohm | N-Channel | 2350pF @ 100V | 60m Ω @ 25A, 10V | 4V @ 90μA | 25A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFA4N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 114W Tc | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF840LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840l-datasheets-8408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 9.01mm | 4.7mm | 3 | 11 Weeks | 6.000006g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 125W | 1 | FET General Purpose Power | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | SILICON | SWITCHING | 500V | 500V | 125W Tc | TO-262AA | 8A | 0.85Ohm | N-Channel | 1300pF @ 25V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| NTP190N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp190n65s3hf-datasheets-3410.pdf | TO-220-3 | 12 Weeks | yes | 650V | 162W Tc | N-Channel | 1610pF @ 400V | 190m Ω @ 10A, 10V | 5V @ 430μA | 20A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N08S207ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp100n08s207aksa1-datasheets-1396.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 26 ns | 51ns | 30 ns | 61 ns | 100A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 400A | 0.0068Ohm | 810 mJ | N-Channel | 4700pF @ 25V | 6.8m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMTH6004SCT | Diodes Incorporated | $1.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6004sct-datasheets-3418.pdf | TO-220-3 | 19 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 2.8W Ta 136W Tc | N-Channel | 4556pF @ 30V | 3.65m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 95.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R190CFDATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190cfdatma2-datasheets-3420.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 151W Tc | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 700μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL40S212 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl40b212-datasheets-7860.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 17 Weeks | Unknown | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 39 ns | 88 ns | 195A | 20V | 40V | 2.4V | 231W Tc | N-Channel | 8320pF @ 25V | 1.9m Ω @ 100A, 10V | 2.4V @ 150μA | 195A Tc | 137nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z10 | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z10pbf-datasheets-8836.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 13 Weeks | 6.000006g | 3 | 1 | Single | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | 43W Tc | 500mOhm | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4442DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4442dyt1e3-datasheets-6361.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 17 ns | 11ns | 47 ns | 125 ns | 15A | 12V | SILICON | 1.6W Ta | 0.0045Ohm | 30V | N-Channel | 4.5m Ω @ 22A, 10V | 1.5V @ 250μA | 15A Ta | 50nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| FQH44N10-F133 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqh44n10f133-datasheets-3435.pdf | TO-247-3 | 3 | 4 Weeks | 6.39g | ACTIVE (Last Updated: 2 days ago) | yes | No | Single | 180W | 1 | FET General Purpose Power | R-PSFM-T3 | 19 ns | 190ns | 100 ns | 90 ns | 48A | 25V | SILICON | SWITCHING | 180W Tc | TO-247AB | 192A | 0.039Ohm | 530 mJ | 100V | N-Channel | 1800pF @ 25V | 39m Ω @ 24A, 10V | 4V @ 250μA | 48A Tc | 62nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| IRLR120 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13 Weeks | 3 | Single | D-Pak | 490pF | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | 100V | 2.5W Ta 42W Tc | 270mOhm | 100V | N-Channel | 490pF @ 25V | 270mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB039N10N3GE8187ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb039n10n3ge8187atma1-datasheets-3445.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 26 Weeks | yes | EAR99 | SINGLE | GULL WING | 1 | R-PSSO-G6 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 214W Tc | TO-263AA | 640A | 0.0039Ohm | 340 mJ | N-Channel | 8410pF @ 50V | 3.9m Ω @ 100A, 10V | 3.5V @ 160μA | 160A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQPF47P06YDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-fqpf47p06-datasheets-0432.pdf | TO-220-3 Full Pack, Formed Leads | Lead Free | 6 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 62W | Other Transistors | 50 ns | 450ns | 195 ns | 100 ns | 30A | 25V | 60V | 62W Tc | -60V | P-Channel | 3600pF @ 25V | 26m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 110nC @ 10V | 10V | ±25V |
