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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRFS8405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfsl8405-datasheets-8942.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 16 Weeks | No SVHC | 3 | EAR99 | Tin | No | 1 | Single | 163W | FET General Purpose Power | 14 ns | 128ns | 77 ns | 55 ns | 120A | 20V | 3V | 163W Tc | 40V | N-Channel | 5193pF @ 25V | 3 V | 2.3m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 161nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6005LCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6005lct-datasheets-2979.pdf | TO-220-3 | 3 | 20 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2.3W Ta 104W Tc | TO-220AB | 130A | 0.006Ohm | 43.5 mJ | N-Channel | 2962pF @ 30V | 6m Ω @ 20A, 10V | 3V @ 250μA | 100A Tc | 47.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU5N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | AVALANCHE RATED | THROUGH-HOLE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | 89W Tc | TO-251 | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDP047N08-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 5 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 75V | 268W Tc | N-Channel | 9415pF @ 25V | 4.7 Ω @ 80A, 10V | 4.5V @ 250μA | 164A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7A65W,S5X | Toshiba Semiconductor and Storage | $6.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 490pF | 6.8A | 650V | 30W Tc | N-Channel | 490pF @ 300V | 780mOhm @ 3.4A, 10V | 3.5V @ 250μA | 6.8A Ta | 15nC @ 10V | 780 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP038AN06A0-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp038an06a0-datasheets-3810.pdf | TO-220-3 | 9 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 60V | 310W Tc | N-Channel | 6400pF @ 25V | 3.8m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 124nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU110 | Vishay Siliconix | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | 100V | 4.8A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | 6 Weeks | 3 | no | EAR99 | AVALANCHE RATED | No | e0 | TIN LEAD | 240 | 3 | Single | 30 | 1 | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 25W Tc | 17A | 0.54Ohm | 100 mJ | N-Channel | 250pF @ 25V | 540m Ω @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFB4410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfb4410-datasheets-3005.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 200W | 1 | FET General Purpose Power | 24 ns | 80ns | 50 ns | 55 ns | 75A | 20V | SILICON | SWITCHING | 2V | 200W Tc | TO-220AB | 220 mJ | 100V | N-Channel | 5150pF @ 50V | 2 V | 10m Ω @ 58A, 10V | 4V @ 150μA | 75A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLR110 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 21 Weeks | 3 | No | Single | 2.5W | D-Pak | 250pF | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | 100V | 2.5W Ta 25W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R299CPAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r299cpaatma1-datasheets-3013.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | no | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 96W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 5ns | 40 ns | 11A | 20V | 600V | SILICON | DRAIN | SWITCHING | 96W Tc | 34A | 0.299Ohm | 290 mJ | 600V | N-Channel | 1100pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD19N20-90-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sud19n2090e3-datasheets-2162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 1 | R-PSSO-G2 | 15 ns | 50ns | 60 ns | 30 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta 136W Tc | 40A | 200V | N-Channel | 1800pF @ 25V | 90m Ω @ 5A, 10V | 4V @ 250μA | 19A Tc | 51nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR014TRL | Vishay Siliconix | $3.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 21 Weeks | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.95 | e0 | TIN LEAD | GULL WING | 240 | 3 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 25W Tc | 0.2Ohm | 27.4 mJ | 60V | N-Channel | 400pF @ 25V | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| AOW20S60 | Alpha & Omega Semiconductor Inc. | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | No | 1 | FET General Purpose Power | 20A | 30V | Single | 600V | 266W Tc | N-Channel | 1038pF @ 100V | 199m Ω @ 10A, 10V | 4.1V @ 250μA | 20A Tc | 19.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R225CFD7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r225cfd7auma1-datasheets-2950.pdf | 4-PowerTSFN | 18 Weeks | 650V | 68W Tc | N-Channel | 1015pF @ 400V | 225m Ω @ 4.9A, 10V | 4.5V @ 240μA | 12A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4952NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 7 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT4005SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt4005sct-datasheets-2951.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 2.3W Ta 104W Tc | TO-220AB | 160A | 0.0047Ohm | 52.8 mJ | N-Channel | 3062pF @ 20V | 4.7m Ω @ 50A, 10V | 4V @ 250μA | 100A Tc | 49.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPA07N60CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-spa07n60cfdxksa1-datasheets-2901.pdf | TO-220-3 Full Pack | 3 | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 32W Tc | TO-220AB | 6.6A | 17A | 0.7Ohm | 230 mJ | N-Channel | 790pF @ 25V | 700m Ω @ 4.6A, 10V | 5V @ 300μA | 6.6A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R6N100D2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta1r6n100d2hv-datasheets-2908.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 1000V | 100W Tc | N-Channel | 645pF @ 10V | 10 Ω @ 800mA, 0V | 4.5V @ 100μA | 1.6A Tj | 27nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK1576DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk1576dpa00j5a-datasheets-2909.pdf | 8-PowerVDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 25A | Single | 150V | 65W Tc | N-Channel | 1200pF @ 25V | 58m Ω @ 12.5A, 10V | 25A Ta | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB17N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb17n80ege3-datasheets-2911.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 800V | 208W Tc | N-Channel | 2408pF @ 100V | 290mOhm @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF17N40T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf17n40t-datasheets-2920.pdf | 400V | 16A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 56W | 1 | FET General Purpose Power | 40 ns | 185ns | 105 ns | 90 ns | 9.5A | 30V | SILICON | SWITCHING | 56W Tc | 0.27Ohm | 400V | N-Channel | 2300pF @ 25V | 270m Ω @ 4.75A, 10V | 5V @ 250μA | 9.5A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| RJK1575DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk1575dpa00j5a-datasheets-2924.pdf | 8-PowerVDFN | 16 Weeks | 8 | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 25A | Single | 150V | 65W Tc | N-Channel | 2200pF @ 25V | 48m Ω @ 12.5A, 10V | 25A Ta | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR110TRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13 Weeks | 3 | No | Single | D-Pak | 250pF | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | 100V | 2.5W Ta 25W Tc | 540mOhm | N-Channel | 250pF @ 25V | 540mOhm @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK56E12N1,S1X | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | Single | 168W | 20ns | 23 ns | 73 ns | 56A | 20V | 168W Tc | 120V | N-Channel | 4200pF @ 60V | 7m Ω @ 28A, 10V | 4V @ 1mA | 56A Ta | 69nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C609NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 5 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 175°C | -55°C | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 167W | 60V | METAL-OXIDE SEMICONDUCTOR | 250A | 900A | 0.0023Ohm | 451 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C410NLTT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c410nltt3g-datasheets-9207.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 167W Tc | 330A | 900A | 0.0012Ohm | 706 mJ | N-Channel | 8862pF @ 25V | 0.9m Ω @ 50A, 10V | 2V @ 250μA | 50A Ta 330A Tc | 143nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP15N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 15A | 200V | N-Channel | 15A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS2D5N08C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerTDFN | 20 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 138W Tc | N-Channel | 6240pF @ 40V | 2.7m Ω @ 68A, 10V | 4V @ 380μA | 166A Tc | 84nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY48P05T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 50V | 150W Tc | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP16N50P | IXYS | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-220-3 | Lead Free | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-220AB | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V |
