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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFL40N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl40n110p-datasheets-1148.pdf | ISOPLUS264™ | 26 Weeks | 3 | 357W | Single | 357W | FET General Purpose Power | 55ns | 54 ns | 110 ns | 21A | 30V | 1100V | 1.1kV | N-Channel | 19000pF @ 25V | 280m Ω @ 20A, 10V | 6.5V @ 1mA | 21A Tc | 310nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT6013JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6013jfll-datasheets-1151.pdf | 600V | 39A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 460W | 460W | 1 | ISOTOP® | 5.63nF | 11 ns | 13ns | 9 ns | 27 ns | 39A | 30V | 600V | N-Channel | 5630pF @ 25V | 130mOhm @ 19.5A, 10V | 5V @ 2.5mA | 39A | 130nC @ 10V | 130 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IXFB30N120Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS264™ | 30A | 1200V | N-Channel | 30A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN72N55Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn72n55q2-datasheets-1152.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | Not Qualified | 23ns | 10 ns | 58 ns | 72A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 288A | 0.072Ohm | 5000 mJ | 550V | N-Channel | 10500pF @ 25V | 72m Ω @ 500mA, 10V | 5V @ 8mA | 72A Tc | 258nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT5010JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jvr-datasheets-1153.pdf | 500V | 44A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 450W | 450W | 1 | ISOTOP® | 8.9nF | 14 ns | 16ns | 5 ns | 54 ns | 44A | 30V | 500V | N-Channel | 8900pF @ 25V | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 44A | 470nC @ 10V | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IXFN80N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n50q3-datasheets-1154.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | EAR99 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 780W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 250ns | 43 ns | 63A | 30V | SILICON | ISOLATED | SWITCHING | 780W Tc | 0.065Ohm | 5000 mJ | 500V | N-Channel | 10000pF @ 25V | 65m Ω @ 40A, 10V | 6.5V @ 8mA | 63A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT20M20JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m20jfll-datasheets-1157.pdf | 200V | 104A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 463W | 463W | 1 | ISOTOP® | 6.85nF | 13 ns | 40ns | 2 ns | 26 ns | 104A | 30V | 200V | N-Channel | 6850pF @ 25V | 20mOhm @ 52A, 10V | 5V @ 2.5mA | 104A | 110nC @ 10V | 20 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1F40N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f40n110p-datasheets-1158.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 53 ns | 110 ns | 24A | 40V | SILICON | ISOLATED | SWITCHING | 1100V | 1100V | 500W Tc | 100A | 0.29Ohm | 2000 mJ | N-Channel | 19000pF @ 25V | 290m Ω @ 20A, 10V | 6.5V @ 1mA | 24A Tc | 310nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT30M36JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m36jfll-datasheets-1159.pdf | 300V | 76A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 463W | 463W | 1 | ISOTOP® | 6.48nF | 15 ns | 28ns | 5 ns | 29 ns | 76A | 30V | 300V | N-Channel | 6480pF @ 25V | 36mOhm @ 38A, 10V | 5V @ 2.5mA | 76A | 115nC @ 10V | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFN30N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn30n110p-datasheets-1160.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 695W | 1 | FET General Purpose Power | Not Qualified | 48ns | 52 ns | 83 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 695W Tc | 75A | 0.36Ohm | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 360m Ω @ 15A, 10V | 6.5V @ 1mA | 25A Tc | 235nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTN120P20T | IXYS | $51.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtn120p20t-datasheets-1162.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | R-PUFM-X4 | 106A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 830W Tc | 400A | 0.03Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 30m Ω @ 60A, 10V | 4.5V @ 250μA | 106A Tc | 740nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| IXTN17N120L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn17n120l-datasheets-1163.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 24 Weeks | 900MOhm | 4 | yes | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | 31ns | 83 ns | 110 ns | 15A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 1200V | 540W Tc | 17A | 30A | 1500 mJ | 1.2kV | N-Channel | 8300pF @ 25V | 900m Ω @ 8.5A, 20V | 5V @ 250μA | 15A Tc | 155nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||
| APT6010JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6010jfll-datasheets-1143.pdf | 600V | 47A | SOT-227-4, miniBLOC | Lead Free | 6 Weeks | 4 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 520W | 520W | 1 | ISOTOP® | 6.71nF | 12 ns | 17ns | 10 ns | 34 ns | 47A | 30V | 600V | N-Channel | 6710pF @ 25V | 100mOhm @ 23.5A, 10V | 5V @ 2.5mA | 47A | 150nC @ 10V | 100 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| IXTT3N200P3HV | IXYS | $43.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth3n200p3hv-datasheets-3758.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 3A | 2000V | 520W Tc | N-Channel | 1860pF @ 25V | 8 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10050LVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10050lvfrg-datasheets-0977.pdf | 1kV | 21A | TO-264-3, TO-264AA | Lead Free | No | 625W | 520W | 1 | TO-264 [L] | 8.797nF | 16 ns | 13ns | 8 ns | 59 ns | 21A | 30V | 1000V | N-Channel | 7900pF @ 25V | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 21A Tc | 500nC @ 10V | 80 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFN26N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn26n100p-datasheets-1147.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 595W | 1 | FET General Purpose Power | Not Qualified | 45ns | 50 ns | 72 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 595W Tc | 65A | 0.39Ohm | 1000 mJ | 1kV | N-Channel | 11900pF @ 25V | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 23A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFB50N80Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfb50n80q2-datasheets-1123.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26 ns | 25ns | 13 ns | 60 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1135W Tc | 200A | 5000 mJ | 800V | N-Channel | 7200pF @ 25V | 160m Ω @ 500mA, 10V | 5.5V @ 8mA | 50A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| APT22F100J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt22f100j-datasheets-1124.pdf | 1kV | 22A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY | No | UPPER | UNSPECIFIED | 4 | 545W | 1 | 44 ns | 40ns | 38 ns | 150 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 545W Tc | 0.38Ohm | N-Channel | 9835pF @ 25V | 380m Ω @ 18A, 10V | 23A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT60M75L2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt60m75l2fllg-datasheets-1126.pdf | 600V | 73A | TO-264-3, TO-264AA | Lead Free | 3 | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | 23 ns | 19ns | 8 ns | 55 ns | 73A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 893W Tc | 292A | 0.075Ohm | N-Channel | 8930pF @ 25V | 75m Ω @ 36.5A, 10V | 5V @ 5mA | 73A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFL32N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfl32n120p-datasheets-1127.pdf | ISOPLUSi5-Pak™ | 20.29mm | 26.42mm | 5.21mm | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 70 ns | 62ns | 51 ns | 88 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 520W Tc | 100A | 2000 mJ | 1.2kV | N-Channel | 21000pF @ 25V | 340m Ω @ 16A, 10V | 6.5V @ 1mA | 24A Tc | 360nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTN21N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixtk21n100-datasheets-1027.pdf | 1kV | 21A | SOT-227-4, miniBLOC | Lead Free | 4 | No SVHC | 550mOhm | 3 | EAR99 | unknown | 8541.29.00.95 | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 50ns | 40 ns | 100 ns | 21A | 20V | 1kV | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 4.5V | 520W Tc | 84A | 1kV | N-Channel | 8400pF @ 25V | 4.5 V | 550m Ω @ 500mA, 10V | 4.5V @ 500μA | 21A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXKN45N80C | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixkn45n80c-datasheets-1129.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 380W | 1 | FET General Purpose Power | Not Qualified | 15ns | 10 ns | 75 ns | 44A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 380W Tc | 670 mJ | 800V | N-Channel | 74m Ω @ 44A, 10V | 3.9V @ 4mA | 44A Tc | 360nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APT50M85JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m85jvfr-datasheets-1130.pdf | 500V | 50A | SOT-227-4, miniBLOC | Lead Free | 12 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 500W | 500W | 1 | ISOTOP® | 10.8nF | 15 ns | 17ns | 7 ns | 52 ns | 50A | 30V | 500V | N-Channel | 10800pF @ 25V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 50A | 535nC @ 10V | 85 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| C3M0032120D | Cree/Wolfspeed | $29.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | TO-247-3 | TO-247-3 | 1200V | 283W Tc | N-Channel | 3357pF @ 1000V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 63A Tc | 114nC @ 15V | 15V | +15V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5010JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jfll-datasheets-1138.pdf | SOT-227-4, miniBLOC | ISOTOP® | 500V | N-Channel | 4360pF @ 25V | 100mOhm @ 20.5A, 10V | 5V @ 2.5mA | 41A | 95nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT8030JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8030jvfr-datasheets-1139.pdf | 800V | 25A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 450W | 450W | 1 | ISOTOP® | 7.9nF | 16 ns | 14ns | 8 ns | 59 ns | 25A | 30V | 800V | N-Channel | 7900pF @ 25V | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 25A | 510nC @ 10V | 300 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| APT19M120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt19m120j-datasheets-1140.pdf | 1.2kV | 19A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 545W | 1 | 50 ns | 31ns | 48 ns | 170 ns | 19A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 545W Tc | 0.53Ohm | N-Channel | 9670pF @ 25V | 530m Ω @ 14A, 10V | 5V @ 2.5mA | 19A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFN40N110Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfn40n110q3-datasheets-1142.pdf | SOT-227-4, miniBLOC | 24 Weeks | unknown | 35A | 1100V | 960W Tc | N-Channel | 14000pF @ 25V | 260m Ω @ 20A, 10V | 6.5V @ 8mA | 35A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT26M100JCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt26m100jcu3-datasheets-1118.pdf | SOT-227-4, miniBLOC | 4 | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1000V | 543W Tc | 26A | 0.396Ohm | N-Channel | 7868pF @ 25V | 396m Ω @ 18A, 10V | 5V @ 2.5mA | 26A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| MMIX1F180N25T | IXYS | $38.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f180n25t-datasheets-1119.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 35 ns | 88 ns | 132A | 30V | SILICON | ISOLATED | SWITCHING | 250V | 250V | 570W Tc | 130A | 500A | 0.013Ohm | 3000 mJ | N-Channel | 23800pF @ 25V | 13m Ω @ 90A, 10V | 5V @ 8mA | 132A Tc | 364nC @ 10V | 10V | ±20V |
