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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT12057B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | TO-247-3 | 3 | 31 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | R-PSIP-T3 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 690W Tc | 88A | 0.57Ohm | 3000 mJ | N-Channel | 6200pF @ 25V | 570m Ω @ 11A, 10V | 5V @ 2.5mA | 22A Tc | 290nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK46N50L | IXYS | $36.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtx46n50l-datasheets-9312.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 160MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 50ns | 42 ns | 80 ns | 46A | 30V | SILICON | DRAIN | SWITCHING | 700W Tc | 100A | 1500 mJ | 500V | N-Channel | 7000pF @ 25V | 160m Ω @ 500mA, 20V | 6V @ 250μA | 46A Tc | 260nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT50M50L2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m50l2llg-datasheets-1081.pdf | 500V | 89A | TO-264-3, TO-264AA | Lead Free | 26 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 1 | 264 MAX™ [L2] | 10.6nF | 24 ns | 22ns | 8 ns | 56 ns | 89A | 30V | 500V | N-Channel | 10550pF @ 25V | 50mOhm @ 44.5A, 10V | 5V @ 5mA | 89A Tc | 200nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFZ520N075T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfz520n075t2-datasheets-1082.pdf | DE475 | 6 | 26 Weeks | 475 | yes | EAR99 | AVALANCHE RATED | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDFP-F6 | 465A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | 600W Tc | 1560A | 0.0013Ohm | 3000 mJ | N-Channel | 41000pF @ 25V | 1.3m Ω @ 100A, 10V | 4V @ 8mA | 465A Tc | 545nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| APT58M50JCU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 4 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 60 ns | 70ns | 50 ns | 155 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 543W Tc | 270A | 0.065Ohm | N-Channel | 10800pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 58A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APT20M20JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m20jll-datasheets-1084.pdf | 200V | 104A | SOT-227-4, miniBLOC | Lead Free | 6 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 463W | 463W | 1 | ISOTOP® | 6.85nF | 13 ns | 40ns | 2 ns | 26 ns | 104A | 30V | 200V | N-Channel | 6850pF @ 25V | 20mOhm @ 52A, 10V | 5V @ 2.5mA | 104A | 110nC @ 10V | 20 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN320N17T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfn320n17t2-datasheets-1085.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | UL RECOGNIZED | unknown | 100A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.07kW | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 170V | 260A | 46 ns | 170ns | 230 ns | 115 ns | 260A | 20V | SILICON | ISOLATED | SWITCHING | 1 | 1070W Tc | 800A | 0.0052Ohm | 5000 mJ | 170V | N-Channel | 45000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 260A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTX22N100L | IXYS | $39.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtk22n100l-datasheets-7159.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 600MOhm | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 36 ns | 35ns | 50 ns | 80 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 700W Tc | 50A | 1500 mJ | 1kV | N-Channel | 7050pF @ 25V | 600m Ω @ 11A, 20V | 5V @ 250μA | 22A Tc | 270nC @ 15V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFE48N50QD2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| APT12057B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt12057b2fllg-datasheets-1090.pdf | 1.2kV | 22A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 690W | 1 | 11 ns | 20ns | 21 ns | 36 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 690W Tc | 88A | 0.57Ohm | N-Channel | 5155pF @ 25V | 570m Ω @ 11A, 10V | 5V @ 2.5mA | 22A Tc | 185nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTK20N150 | IXYS | $21.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtx20n150-datasheets-3657.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | AVALANCHE RATED | unknown | SINGLE | 1 | FET General Purpose Power | R-PSFM-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 1250W Tc | 50A | 1Ohm | 2500 mJ | N-Channel | 7800pF @ 25V | 1 Ω @ 10A, 10V | 4.5V @ 1mA | 20A Tc | 215nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5010JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jll-datasheets-1076.pdf | 500V | 41A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 378W | 378W | 1 | ISOTOP® | 4.36nF | 11 ns | 13ns | 3 ns | 25 ns | 41A | 30V | 500V | N-Channel | 4360pF @ 25V | 100mOhm @ 20.5A, 10V | 5V @ 2.5mA | 41A | 95nC @ 10V | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFE48N50QD3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFR30N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n110p-datasheets-1060.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 48ns | 52 ns | 83 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 1100V | 320W Tc | 75A | 0.4Ohm | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 400m Ω @ 15A, 10V | 6.5V @ 1mA | 16A Tc | 235nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| APT50M75JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m75jll-datasheets-1061.pdf | 500V | 51A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 460W | 460W | 1 | ISOTOP® | 5.59nF | 8 ns | 17ns | 3 ns | 21 ns | 51A | 30V | 500V | N-Channel | 5590pF @ 25V | 75mOhm @ 25.5A, 10V | 5V @ 2.5mA | 51A | 125nC @ 10V | 75 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT12N150HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 1500V | 890W Tc | N-Channel | 3720pF @ 25V | 2.2 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT20N50D | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth20n50d-datasheets-9125.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 330mOhm | yes | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | FET General Purpose Power | R-PSSO-G2 | 85ns | 75 ns | 110 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 50A | 500V | N-Channel | 2500pF @ 25V | 330m Ω @ 10A, 10V | 3.5V @ 250mA | 20A Tc | 125nC @ 10V | Depletion Mode | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFN400N15X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn400n15x3-datasheets-1064.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 150V | 695W Tc | N-Channel | 23700pF @ 25V | 2.5m Ω @ 200A, 10V | 4.5V @ 8mA | 400A Tc | 365nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK38N80Q2 | IXYS | $56.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx38n80q2-datasheets-0998.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 10 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 735W | 1 | FET General Purpose Power | 20 ns | 16ns | 12 ns | 60 ns | 38A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 0.22Ohm | 4000 mJ | 800V | N-Channel | 8340pF @ 25V | 220m Ω @ 19A, 10V | 4.5V @ 8mA | 38A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFB82N60Q3 | IXYS | $41.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb82n60q3-datasheets-1066.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | 3 | 26 Weeks | 264 | 3 | Single | 1.56kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 40 ns | 300ns | 60 ns | 82A | 30V | SILICON | DRAIN | SWITCHING | 1560W Tc | 240A | 0.075Ohm | 4000 mJ | 600V | N-Channel | 13500pF @ 25V | 75m Ω @ 41A, 10V | 6.5V @ 8mA | 82A Tc | 275nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| HCT7000MTX | TT Electronics/Optek Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/ttelectronicsoptektechnology-hct7000m-datasheets-0943.pdf | 3-SMD, No Lead | 3.175mm | 1.3716mm | 2.667mm | 25 Weeks | 3 | Single | 300mW | 3-SMD | 60pF | 10 ns | 10 ns | 200mA | 40V | 60V | 300mW Ta | 5Ohm | N-Channel | 60pF @ 25V | 5Ohm @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 5 Ω | 10V | ±40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M120JCU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m120jcu2-datasheets-1069.pdf | SOT-227-4, miniBLOC | 4 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 50 ns | 31ns | 48 ns | 170 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 543W Tc | 0.672Ohm | N-Channel | 7736pF @ 25V | 672m Ω @ 14A, 10V | 5V @ 2.5mA | 20A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT10035LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10035b2fllg-datasheets-1014.pdf | 1kV | 28A | TO-264-3, TO-264AA | Lead Free | No | 690W | 690W | 1 | TO-264 [L] | 5.185nF | 12 ns | 10ns | 9 ns | 36 ns | 28A | 30V | 1000V | N-Channel | 5185pF @ 25V | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 28A Tc | 186nC @ 10V | 370 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK30N100Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixfx30n100q2-datasheets-1046.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10mg | No SVHC | 400mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 14ns | 10 ns | 60 ns | 30A | 30V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 5V | 735W Tc | 250 ns | 120A | 4000 mJ | 1kV | N-Channel | 8200pF @ 25V | 5 V | 400m Ω @ 15A, 10V | 5V @ 8mA | 30A Tc | 186nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFN20N120 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn20n120-datasheets-1072.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 780W | 1 | Not Qualified | 45ns | 20 ns | 75 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 780W Tc | 80A | 0.75Ohm | 2000 mJ | 1.2kV | N-Channel | 7400pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 8mA | 20A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| VS-FC80NA20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfc80na20-datasheets-1073.pdf | SOT-227-4, miniBLOC | 20 Weeks | EAR99 | unknown | NOT APPLICABLE | NOT APPLICABLE | 108A | 200V | 405W Tc | N-Channel | 10720pF @ 50V | 14m Ω @ 80A, 10V | 5.5V @ 250μA | 108A Tc | 161nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT19F100J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-apt19f100j-datasheets-1056.pdf | 1kV | 19A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 460W | 1 | 36 ns | 37ns | 35 ns | 140 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 460W Tc | N-Channel | 8500pF @ 25V | 440m Ω @ 16A, 10V | 5V @ 2.5mA | 20A Tc | 260nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT50N60JCCU2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt50n60jccu2-datasheets-1058.pdf | SOT-227-4, miniBLOC | 4 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | UPPER | UNSPECIFIED | 4 | 290W | 1 | FET General Purpose Power | 30 ns | 20ns | 20 ns | 100 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 290W Tc | N-Channel | 6800pF @ 25V | 45m Ω @ 22.5A, 10V | 3.9V @ 3mA | 50A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTT1N250HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 2500V | 250W Tc | N-Channel | 1660pF @ 25V | 40 Ω @ 750mA, 10V | 4V @ 250μA | 1.5A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STE60N105DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 42 Weeks | EAR99 | compliant | NOT SPECIFIED | STE60 | NOT SPECIFIED | FET General Purpose Powers | Single | 1050V | 680W Tc | 44A | N-Channel | 6675pF @ 100V | 120m Ω @ 23A, 10V | 5V @ 100μA | 46A Tc | 204nC @ 10V | 10V | ±30V |
