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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT6010LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6010b2fllg-datasheets-1005.pdf | 600V | 54A | TO-264-3, TO-264AA | Lead Free | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 833W | 690W | 1 | TO-264 [L] | 10.7nF | 12 ns | 19ns | 9 ns | 34 ns | 54A | 30V | 600V | N-Channel | 6710pF @ 25V | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 54A Tc | 150nC @ 10V | 180 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IXFE44N50QD2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFB38N100Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfb38n100q2-datasheets-1110.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | 250MOhm | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 25 ns | 28ns | 15 ns | 57 ns | 38A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 890W Tc | 152A | 5000 mJ | 1kV | N-Channel | 13500pF @ 25V | 250m Ω @ 19A, 10V | 5.5V @ 8mA | 38A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| VS-FC220SA20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vsfc220sa20-datasheets-1111.pdf | SOT-227-4, miniBLOC | 4 | 20 Weeks | EAR99 | UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PUFM-X4 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 789W Tc | 520A | 0.007Ohm | 1200 mJ | N-Channel | 21000pF @ 50V | 7m Ω @ 150A, 10V | 5.1V @ 500μA | 220A Tc | 350nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT6010JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6010jll-datasheets-1113.pdf | 600V | 47A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 520W | 520W | 1 | ISOTOP® | 6.71nF | 12 ns | 17ns | 10 ns | 34 ns | 47A | 30V | 600V | N-Channel | 6710pF @ 25V | 100mOhm @ 23.5A, 10V | 5V @ 2.5mA | 47A | 150nC @ 10V | 100 mΩ | |||||||||||||||||||||||||||||||||||||||
| APT10043JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10043jvr-datasheets-1114.pdf | 1kV | 23A | SOT-227-4, miniBLOC | Lead Free | 4 | NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 4 weeks ago) | No | 500W | 500W | 1 | ISOTOP® | 9nF | 14 ns | 10ns | 11 ns | 51 ns | 22A | 30V | 1000V | N-Channel | 9000pF @ 25V | 430mOhm @ 500mA, 10V | 4V @ 1mA | 22A | 480nC @ 10V | 430 mΩ | |||||||||||||||||||||||||||||||||||||||
| MMIX1T550N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SupreMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mmix1t550n055t2-datasheets-1115.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 28 Weeks | 24 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G21 | 45 ns | 90 ns | 550A | 20V | SILICON | ISOLATED | SWITCHING | 55V | 55V | 830W Tc | 2000A | 0.0013Ohm | 3000 mJ | N-Channel | 40000pF @ 25V | 1.3m Ω @ 100A, 10V | 3.8V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFK44N55Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n55q-datasheets-1116.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 30 ns | 20ns | 10 ns | 75 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 2500 mJ | 550V | N-Channel | 6400pF @ 25V | 120m Ω @ 22A, 10V | 4.5V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFN32N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n60-datasheets-0809.pdf | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 45ns | 60 ns | 100 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520AW Tc | 128A | 0.25Ohm | 600V | N-Channel | 9000pF @ 25V | 250m Ω @ 500mA, 10V | 4.5V @ 8mA | 32A Tc | 325nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| APT26M100JCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt26m100jcu3-datasheets-1118.pdf | SOT-227-4, miniBLOC | 4 | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1000V | 543W Tc | 26A | 0.396Ohm | N-Channel | 7868pF @ 25V | 396m Ω @ 18A, 10V | 5V @ 2.5mA | 26A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| MMIX1F180N25T | IXYS | $38.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f180n25t-datasheets-1119.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 35 ns | 88 ns | 132A | 30V | SILICON | ISOLATED | SWITCHING | 250V | 250V | 570W Tc | 130A | 500A | 0.013Ohm | 3000 mJ | N-Channel | 23800pF @ 25V | 13m Ω @ 90A, 10V | 5V @ 8mA | 132A Tc | 364nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| APT6013JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6013jll-datasheets-1121.pdf | 600V | 39A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 460W | 1 | FET General Purpose Power | 11 ns | 13ns | 9 ns | 27 ns | 39A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 460W Tc | 2500 mJ | N-Channel | 5630pF @ 25V | 130m Ω @ 19.5A, 10V | 5V @ 2.5mA | 39A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFN80N50Q2 | IXYS | $14.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n50q2-datasheets-1122.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 60MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 890W | 1 | 25ns | 11 ns | 60 ns | 80A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 320A | 5000 mJ | 500V | N-Channel | 12800pF @ 25V | 60m Ω @ 500mA, 10V | 4.5V @ 8mA | 72A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| MMIX1F230N20T | IXYS | $42.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f230n20t-datasheets-1091.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | R-PDSO-G21 | 58 ns | 62 ns | 168A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | 600W Tc | 630A | 0.0083Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 8.3m Ω @ 60A, 10V | 5V @ 8mA | 168A Tc | 378nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| PCFD045N10AW | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 175°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-pcfd045n10aw-datasheets-3721.pdf | 4 Weeks | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB40N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfb40n110p-datasheets-1092.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 55ns | 54 ns | 110 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 1100V | 1250W Tc | 100A | 0.26Ohm | 2000 mJ | 1.1kV | N-Channel | 19000pF @ 25V | 260m Ω @ 20A, 10V | 6.5V @ 1mA | 40A Tc | 310nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| APT12057LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt12057b2fllg-datasheets-1090.pdf | 1.2kV | 22A | TO-264-3, TO-264AA | Lead Free | 3 | 34 Weeks | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 690W | 1 | R-PSFM-T3 | 11 ns | 20ns | 21 ns | 36 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 690W Tc | 88A | 0.57Ohm | 3000 mJ | N-Channel | 5155pF @ 25V | 570m Ω @ 11A, 10V | 5V @ 2.5mA | 22A Tc | 185nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| APT10086BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | 1kV | 13A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 400W | 370W | 1 | TO-247 [B] | 3.47nF | 12 ns | 10ns | 10 ns | 43 ns | 13A | 30V | 1000V | N-Channel | 4440pF @ 25V | 860mOhm @ 500mA, 10V | 4V @ 1mA | 13A Tc | 275nC @ 10V | 210 mΩ | |||||||||||||||||||||||||||||||||||||||||
| MMIX1F160N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f160n30t-datasheets-1095.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 21 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 570W | 1 | FET General Purpose Power | 34 ns | 90 ns | 102A | 20V | SILICON | ISOLATED | SWITCHING | 300V | 300V | 570W Tc | 440A | 0.02Ohm | 3000 mJ | N-Channel | 2800pF @ 25V | 20m Ω @ 60A, 10V | 5V @ 8mA | 102A Tc | 335nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| MMIX1F420N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f420n10t-datasheets-1096.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | Lead Free | 21 | 30 Weeks | 21 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 680W | 1 | FET General Purpose Power | 47 ns | 115 ns | 334A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 680W Tc | 0.0026Ohm | 5000 mJ | N-Channel | 4700pF @ 10V | 2.6m Ω @ 60A, 10V | 5V @ 8mA | 334A Tc | 670nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFL30N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfl30n120p-datasheets-1097.pdf | ISOPLUSi5-Pak™ | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 357W Tc | 80A | 1500 mJ | 1.2kV | N-Channel | 19000pF @ 25V | 380m Ω @ 15A, 10V | 6.5V @ 1mA | 18A Tc | 310nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| APT10078BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10078bfllg-datasheets-1098.pdf | 1kV | 14A | TO-247-3 | Lead Free | No | 403W | 403W | 1 | TO-247 [B] | 2.525nF | 9 ns | 8ns | 9 ns | 30 ns | 14A | 30V | 1000V | N-Channel | 2525pF @ 25V | 780mOhm @ 7A, 10V | 5V @ 1mA | 14A Tc | 95nC @ 10V | 780 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| APT5010JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jvfr-datasheets-1099.pdf | 500V | 44A | SOT-227-4, miniBLOC | Lead Free | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 450W | 450W | 1 | ISOTOP® | 8.9nF | 14 ns | 16ns | 5 ns | 54 ns | 44A | 30V | 500V | N-Channel | 8900pF @ 25V | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 44A | 470nC @ 10V | 100 mΩ | ||||||||||||||||||||||||||||||||||||||
| IXFE34N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe34n100-datasheets-1100.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 82ns | 40 ns | 150 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 580W Tc | 136A | 0.28Ohm | 1kV | N-Channel | 15000pF @ 25V | 280m Ω @ 17A, 10V | 5.5V @ 8mA | 30A Tc | 455nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| APT12060LVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt12060lvfrg-datasheets-1101.pdf | 1.2kV | 20A | TO-264-3, TO-264AA | Lead Free | 24 Weeks | No | 625W | 1 | TO-264 [L] | 9.5nF | 13 ns | 12ns | 12 ns | 63 ns | 20A | 30V | 1200V | N-Channel | 9500pF @ 25V | 600mOhm @ 10A, 10V | 4V @ 1mA | 20A Tc | 650nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||
| MMIX1F360N15T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f360n15t2-datasheets-1102.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | EAR99 | AVALANCHE RATED | unknown | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 50 ns | 115 ns | 235A | 30V | SILICON | ISOLATED | SWITCHING | 150V | 150V | 680W Tc | 900A | 0.0044Ohm | 3000 mJ | N-Channel | 47500pF @ 25V | 4.4m Ω @ 100A, 10V | 5V @ 8mA | 235A Tc | 715nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| APT50M85JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m85jvr-datasheets-1103.pdf | 500V | 50A | SOT-227-4, miniBLOC | Lead Free | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 500W | 500W | 1 | ISOTOP® | 10.8nF | 15 ns | 17ns | 7 ns | 52 ns | 50A | 30V | 500V | N-Channel | 10800pF @ 25V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 50A | 535nC @ 10V | 85 mΩ | ||||||||||||||||||||||||||||||||||||||
| APT30M40JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 300V | 70A | SOT-227-4, miniBLOC | Lead Free | 4 | 31 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | HIGH VOLTAGE | No | UPPER | UNSPECIFIED | 4 | 450W | 1 | 16 ns | 20ns | 4 ns | 48 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 450W Tc | 280A | 2500 mJ | N-Channel | 10200pF @ 25V | 40m Ω @ 500mA, 10V | 4V @ 2.5mA | 70A Tc | 425nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| APT12057B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt12057b2fllg-datasheets-1090.pdf | 1.2kV | 22A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 690W | 1 | 11 ns | 20ns | 21 ns | 36 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 690W Tc | 88A | 0.57Ohm | N-Channel | 5155pF @ 25V | 570m Ω @ 11A, 10V | 5V @ 2.5mA | 22A Tc | 185nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTK20N150 | IXYS | $21.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtx20n150-datasheets-3657.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | AVALANCHE RATED | unknown | SINGLE | 1 | FET General Purpose Power | R-PSFM-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 1250W Tc | 50A | 1Ohm | 2500 mJ | N-Channel | 7800pF @ 25V | 1 Ω @ 10A, 10V | 4.5V @ 1mA | 20A Tc | 215nC @ 10V | 10V | ±30V |
