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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFB72N55Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfb72n55q2-datasheets-1045.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | Not Qualified | 23ns | 10 ns | 58 ns | 72A | 30V | SILICON | DRAIN | SWITCHING | 890W Tc | 284A | 0.072Ohm | 5000 mJ | 550V | N-Channel | 10500pF @ 25V | 72m Ω @ 500mA, 10V | 5V @ 8mA | 72A Tc | 258nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFX30N100Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx30n100q2-datasheets-1046.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 400MOhm | 247 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 22 ns | 14ns | 10 ns | 60 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 735W Tc | 120A | 4000 mJ | 1kV | N-Channel | 8200pF @ 25V | 400m Ω @ 15A, 10V | 5V @ 8mA | 30A Tc | 186nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| APT39M60J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt39m60j-datasheets-1047.pdf | SOT-227-4, miniBLOC | 19 Weeks | ISOTOP® | 600V | 480W Tc | N-Channel | 11300pF @ 25V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 42A Tc | 280nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN21N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn21n100q-datasheets-1049.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 520W Tc | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 5900pF @ 25V | 500m Ω @ 500mA, 10V | 5V @ 4mA | 21A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| MKE38RK600DFEL-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-mke38rk600dfeltrr-datasheets-1018.pdf | 9-SMD Module | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 50A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL39N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl39n90-datasheets-1051.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 580W | 1 | Not Qualified | R-PSIP-T3 | 45 ns | 68ns | 30 ns | 125 ns | 34A | 20V | SILICON | ISOLATED | SWITCHING | 580W Tc | 154A | 0.22Ohm | 4000 mJ | 900V | N-Channel | 13400pF @ 25V | 220m Ω @ 19.5A, 10V | 5V @ 8mA | 34A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| APT8020B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8020lllg-datasheets-0993.pdf | 800V | 38A | TO-247-3 Variant | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 31 Weeks | 10.6g | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 694W | 1 | 12 ns | 14ns | 9 ns | 39 ns | 38A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 0.2Ohm | 800V | N-Channel | 5200pF @ 25V | 200m Ω @ 19A, 10V | 5V @ 2.5mA | 38A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTN200N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtn200n10t-datasheets-1054.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | 31ns | 34 ns | 45 ns | 200A | 20V | SILICON | ISOLATED | SWITCHING | 550W Tc | 500A | 0.0055Ohm | 100V | N-Channel | 9400pF @ 25V | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFL70N60Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfl70n60q2-datasheets-1055.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26 ns | 25ns | 12 ns | 60 ns | 37A | 30V | SILICON | ISOLATED | SWITCHING | 360W Tc | 280A | 0.092Ohm | 5000 mJ | 600V | N-Channel | 12000pF @ 25V | 92m Ω @ 35A, 10V | 5.5V @ 8mA | 37A Tc | 265nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| APT50M75JLLU2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-apt50m75jllu2-datasheets-1038.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 36 Weeks | 30.000004g | 75mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 290W | 1 | FET General Purpose Power | 10 ns | 20ns | 5 ns | 21 ns | 51A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 290W Tc | 2500 mJ | N-Channel | 5590pF @ 25V | 75m Ω @ 25.5A, 10V | 5V @ 1mA | 51A Tc | 123nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTT1N250HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 2500V | 250W Tc | N-Channel | 1660pF @ 25V | 40 Ω @ 750mA, 10V | 4V @ 250μA | 1.5A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STE60N105DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 42 Weeks | EAR99 | compliant | NOT SPECIFIED | STE60 | NOT SPECIFIED | FET General Purpose Powers | Single | 1050V | 680W Tc | 44A | N-Channel | 6675pF @ 100V | 120m Ω @ 23A, 10V | 5V @ 100μA | 46A Tc | 204nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN23N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfn23n100-datasheets-1041.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 568W | 1 | FET General Purpose Power | Not Qualified | 35ns | 21 ns | 75 ns | 23A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 600W Tc | 92A | 390mOhm | 3000 mJ | 1kV | N-Channel | 5V @ 8mA | 23A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTK21N100 | IXYS | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixtk21n100-datasheets-1027.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 50ns | 40 ns | 100 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 0.55Ohm | 1kV | N-Channel | 8400pF @ 25V | 550m Ω @ 500mA, 10V | 4.5V @ 500μA | 21A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFR38N80Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfr38n80q2-datasheets-1028.pdf | ISOPLUS247™ | 3 | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 16ns | 12 ns | 60 ns | 28A | 30V | SILICON | ISOLATED | 416W Tc | 150A | 0.24Ohm | 4000 mJ | 800V | N-Channel | 8340pF @ 25V | 240m Ω @ 19A, 10V | 4.5V @ 8mA | 28A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT10035LLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10035lllg-datasheets-1029.pdf | 1kV | 28A | TO-264-3, TO-264AA | Lead Free | 3 | 15 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 12 ns | 10ns | 9 ns | 36 ns | 28A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 690W Tc | 0.35Ohm | 3000 mJ | N-Channel | 5185pF @ 25V | 350m Ω @ 14A, 10V | 5V @ 2.5mA | 28A Tc | 186nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| APT10050B2VFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10050b2vfrg-datasheets-1030.pdf | 1kV | 21A | TO-247-3 Variant | Lead Free | 28 Weeks | 3 | No | 625W | 520W | 1 | T-MAX™ [B2] | 8.9nF | 16 ns | 13ns | 8 ns | 59 ns | 21A | 30V | 1000V | N-Channel | 7900pF @ 25V | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 21A Tc | 500nC @ 10V | 110 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| IXFN120N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-227-4, miniBLOC | 120A | 250V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38P600LB-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | 600V | N-Channel | 50A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA10SICP12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | 25A | 1200V | 170W Tc | 1403pF @ 800V | 100m Ω @ 10A | 25A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX17N120L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtk17n120l-datasheets-3780.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 39ns | 63 ns | 75 ns | 17A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 700W Tc | 0.9Ohm | 2500 mJ | 1.2kV | N-Channel | 8300pF @ 25V | 900m Ω @ 8.5A, 20V | 5V @ 250μA | 17A Tc | 155nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||
| IXFN64N50PD2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfn64n50pd2-datasheets-1034.pdf | SOT-227-4, miniBLOC | 4 | 38.000013g | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 52A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 625W Tc | 50A | 200A | 0.085Ohm | 2500 mJ | N-Channel | 11000pF @ 25V | 85m Ω @ 32A, 10V | 5V @ 8mA | 52A Tc | 186nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT12067LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt12067lfllg-datasheets-1035.pdf | 1.2kV | 18A | TO-264-3, TO-264AA | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 565W | 1 | TO-264 [L] | 4.42nF | 22 ns | 19ns | 19 ns | 22 ns | 18A | 30V | 1200V | N-Channel | 4420pF @ 25V | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 18A Tc | 150nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT8020B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8020b2fllg-datasheets-1036.pdf | 800V | 38A | TO-247-3 Variant | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 694W | 694W | 1 | T-MAX™ [B2] | 5.2nF | 12 ns | 14ns | 9 ns | 39 ns | 38A | 30V | 800V | N-Channel | 5200pF @ 25V | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 38A Tc | 195nC @ 10V | 220 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| APT20M120JCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m120jcu3-datasheets-1037.pdf | SOT-227-4, miniBLOC | 4 | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 50 ns | 31ns | 48 ns | 170 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 543W Tc | 0.672Ohm | N-Channel | 7736pF @ 25V | 672m Ω @ 14A, 10V | 5V @ 2.5mA | 20A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFR26N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n100p-datasheets-1022.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 290W | 1 | FET General Purpose Power | Not Qualified | 45ns | 50 ns | 72 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 290W Tc | 65A | 1000 mJ | 1kV | N-Channel | 11900pF @ 25V | 430m Ω @ 13A, 10V | 6.5V @ 1mA | 15A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APT20M22JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m22jvr-datasheets-1023.pdf | 200V | 97A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 450W | 450W | 1 | ISOTOP® | 10.2nF | 16 ns | 25ns | 5 ns | 48 ns | 97A | 30V | 200V | N-Channel | 10200pF @ 25V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 97A | 435nC @ 10V | 22 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| APT20M22JVRU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m22jvru2-datasheets-1024.pdf | SOT-227-4, miniBLOC | 4 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 450W | 1 | FET General Purpose Power | 16 ns | 25ns | 8 ns | 48 ns | 97A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 450W Tc | 388A | 0.022Ohm | 2500 mJ | N-Channel | 8500pF @ 25V | 22m Ω @ 48.5A, 10V | 4V @ 2.5mA | 97A Tc | 290nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFN40N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn40n90p-datasheets-1026.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 695W | 1 | FET General Purpose Power | Not Qualified | 33A | 30V | SILICON | ISOLATED | SWITCHING | 695W Tc | 80A | 900V | N-Channel | 14000pF @ 25V | 210m Ω @ 20A, 10V | 6.5V @ 1mA | 33A Tc | 230nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFN73N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfn73n30q-datasheets-1006.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 481W Tc | 292A | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V |
