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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFT80N085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft80n085-datasheets-1019.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 85A | 320A | 0.009Ohm | 2500 mJ | 85V | N-Channel | 4800pF @ 25V | 9m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| VS-FA72SA50LC | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfa72sa50lc-datasheets-1020.pdf | SOT-227-4, miniBLOC | 20 Weeks | yes | EAR99 | 1 | 72A | 20V | 500V | 1136W Tc | N-Channel | 10000pF @ 25V | 80m Ω @ 34A, 10V | 4V @ 250μA | 72A Tc | 338nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTZ550N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SupreMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtz550n055t2-datasheets-1002.pdf | DE475 | Lead Free | 6 | 18 Weeks | 1mOhm | 475 | yes | EAR99 | AVALANCHE RATED | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDFP-F6 | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | 600W Tc | 1650A | 3000 mJ | N-Channel | 40000pF @ 25V | 1m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| VS-FA40SA50LC | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfa40sa50lc-datasheets-1003.pdf | SOT-227-4, miniBLOC | 20 Weeks | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40A | 500V | 543W Tc | N-Channel | 6900pF @ 25V | 130m Ω @ 23A, 10V | 4V @ 250μA | 40A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6010B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6010b2fllg-datasheets-1005.pdf | 600V | 54A | TO-247-3 Variant | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 690W | 690W | 1 | T-MAX™ [B2] | 6.71nF | 12 ns | 19ns | 9 ns | 34 ns | 54A | 30V | 600V | N-Channel | 6710pF @ 25V | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 54A Tc | 150nC @ 10V | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN73N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfn73n30q-datasheets-1006.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 481W Tc | 292A | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT10M11JVRU2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-apt10m11jvru2-datasheets-1007.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 36 Weeks | 30.000004g | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 450W | 1 | FET General Purpose Power | 16 ns | 48ns | 9 ns | 51 ns | 142A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 450W Tc | 576A | 2500 mJ | N-Channel | 8600pF @ 25V | 11m Ω @ 71A, 10V | 4V @ 2.5mA | 142A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFN240N15T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn240n15t2-datasheets-1009.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | 120A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 150V | 240A | 48 ns | 125ns | 145 ns | 77 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1 | 830W Tc | 600A | 0.0052Ohm | 2000 mJ | 150V | N-Channel | 32000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 240A Tc | 460nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| APT30M60J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30m60j-datasheets-1011.pdf | 300V | 30A | SOT-227-4, miniBLOC | Lead Free | 4 | 19 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 355W | 1 | 48 ns | 55ns | 44 ns | 145 ns | 31A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 355W Tc | N-Channel | 5890pF @ 25V | 150m Ω @ 21A, 10V | 5V @ 2.5mA | 31A Tc | 215nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFR10N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr12n100q-datasheets-0945.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 23ns | 15 ns | 40 ns | 9A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 250W Tc | 9A | 40A | 1kV | N-Channel | 2900pF @ 25V | 1.2 Ω @ 5A, 10V | 5.5V @ 4mA | 9A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT10035B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10035b2fllg-datasheets-1014.pdf | 1kV | 28A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 690W | 1 | FET General Purpose Power | 12 ns | 10ns | 9 ns | 36 ns | 28A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 690W Tc | N-Channel | 5185pF @ 25V | 370m Ω @ 14A, 10V | 5V @ 2.5mA | 28A Tc | 186nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN27N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn27n80q-datasheets-1015.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 40g | No SVHC | 320mOhm | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | Not Qualified | 2.5kV | 28ns | 13 ns | 50 ns | 27A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 520W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 4.5 V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| APT26M100JCU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt26m100jcu2-datasheets-1016.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 44 ns | 40ns | 38 ns | 150 ns | 26A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 543W Tc | 0.396Ohm | N-Channel | 7868pF @ 25V | 396m Ω @ 18A, 10V | 5V @ 2.5mA | 26A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFL80N50Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfl80n50q2-datasheets-1017.pdf | ISOPLUS264™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | FET General Purpose Power | Not Qualified | 25ns | 11 ns | 60 ns | 64A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 55A | 0.066Ohm | 5000 mJ | 500V | N-Channel | 10500pF @ 25V | 66m Ω @ 40A, 10V | 5V @ 8mA | 55A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTT75N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth67n10-datasheets-1685.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 60ns | 30 ns | 100 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 300A | 0.02Ohm | 100V | N-Channel | 4500pF @ 25V | 20m Ω @ 37.5A, 10V | 4V @ 4mA | 75A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFX38N80Q2 | IXYS | $106.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx38n80q2-datasheets-0998.pdf | TO-247-3 | Lead Free | 3 | 220MOhm | 3 | yes | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 16ns | 12 ns | 60 ns | 38A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 150A | 4000 mJ | 800V | N-Channel | 8340pF @ 25V | 220m Ω @ 19A, 10V | 4.5V @ 8mA | 38A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFK44N80Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n80q3-datasheets-0999.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | 45 ns | 300ns | 63 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 0.19Ohm | 800V | N-Channel | 9840pF @ 25V | 190m Ω @ 22A, 10V | 6.5V @ 8mA | 44A Tc | 185nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| MKE38P600LB-TRR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | yes | 50A | 600V | N-Channel | 50A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFZ140N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfz140n25t-datasheets-0985.pdf | DE475 | 6 | 26 Weeks | 475 | yes | EAR99 | AVALANCHE RATED | unknown | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDFP-F6 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 445W Tc | 400A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 100A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT58M50JU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt58m50ju3-datasheets-0986.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | 36 Weeks | 30.000004g | 4 | EAR99 | No | 1 | Single | 1 | FET General Purpose Power | 60 ns | 70ns | 50 ns | 155 ns | 58A | 30V | 543W Tc | 500V | N-Channel | 10800pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 58A Tc | 340nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN140N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfn140n25t-datasheets-0987.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 690W Tc | 400A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFN50N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfn50n50-datasheets-0988.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 90MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 600W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600W Tc | 200A | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 500mA, 10V | 4.5V @ 8mA | 50A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFL44N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n60-datasheets-0989.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSIP-T3 | 42 ns | 55ns | 45 ns | 110 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 500W Tc | 176A | 0.13Ohm | 3000 mJ | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 41A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFX400N15X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 150V | 1250W Tc | N-Channel | 23700pF @ 25V | 3m Ω @ 200A, 10V | 4.5V @ 8mA | 400A Tc | 365nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT38F50J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 4 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 355W | 1 | 38 ns | 45ns | 33 ns | 100 ns | 38A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 355W Tc | N-Channel | 8800pF @ 25V | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 38A Tc | 220nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APT20M22JVRU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m22jvru3-datasheets-0991.pdf | SOT-227-4, miniBLOC | 4 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 450W | 1 | FET General Purpose Power | 16 ns | 25ns | 8 ns | 48 ns | 97A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 450W Tc | 388A | 0.022Ohm | 2500 mJ | N-Channel | 8500pF @ 25V | 22m Ω @ 48.5A, 10V | 4V @ 2.5mA | 97A Tc | 290nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT8020LLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8020lllg-datasheets-0993.pdf | 800V | 38A | TO-264-3, TO-264AA | Lead Free | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 694W | 694W | 1 | TO-264 [L] | 5.2nF | 12 ns | 14ns | 9 ns | 39 ns | 38A | 30V | 800V | N-Channel | 5200pF @ 25V | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 38A Tc | 195nC @ 10V | 200 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5010JVRU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jvru3-datasheets-0994.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 36 Weeks | 30.000004g | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 450W | 1 | FET General Purpose Power | 18 ns | 16ns | 5 ns | 54 ns | 44A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 450W Tc | 2500 mJ | N-Channel | 7410pF @ 25V | 100m Ω @ 22A, 10V | 4V @ 2.5mA | 44A Tc | 312nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTF6N200P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtf6n200p3-datasheets-0996.pdf | ISOPLUSi5-Pak™ | 28 Weeks | compliant | 2000V | 215W Tc | N-Channel | 3700pF @ 25V | 4.2 Ω @ 3A, 10V | 5V @ 250μA | 4A Tc | 143nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN120N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | SOT-227-4, miniBLOC | 4 | 120A | 250V | 730W Tc | N-Channel | 7700pF @ 25V | 20m Ω @ 500mA, 10V | 4V @ 250μA | 120A Tc | 360nC @ 10V |
