Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT8030LVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8030lvfrg-datasheets-0973.pdf | 800V | 27A | TO-264-3, TO-264AA | Lead Free | 4 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Tin | No | 625W | 520W | 1 | TO-264 [L] | 10.5nF | 16 ns | 14ns | 8 ns | 59 ns | 27A | 30V | 800V | N-Channel | 7900pF @ 25V | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 27A Tc | 510nC @ 10V | 85 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFL82N60P | IXYS | $30.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfl82n60p-datasheets-0974.pdf | ISOPLUS264™ | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 23ns | 24 ns | 79 ns | 55A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 200A | 0.078Ohm | 5000 mJ | 600V | N-Channel | 23000pF @ 25V | 78m Ω @ 41A, 10V | 5V @ 8mA | 55A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT8024LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8024lfllg-datasheets-0975.pdf | 800V | 31A | TO-264-3, TO-264AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 565W | 1 | R-PSFM-T3 | 9 ns | 5ns | 4 ns | 23 ns | 31A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 565W Tc | 0.26Ohm | 2500 mJ | N-Channel | 4670pF @ 25V | 260m Ω @ 15.5A, 10V | 5V @ 2.5mA | 31A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFE50N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe50n50-datasheets-0976.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 53A | 220A | 0.1Ohm | 500V | N-Channel | 9400pF @ 25V | 100m Ω @ 25A, 10V | 4.5V @ 8mA | 47A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT10050LVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10050lvfrg-datasheets-0977.pdf | 1kV | 21A | TO-264-3, TO-264AA | Lead Free | No | 520W | 1 | TO-264 [L] | 7.9nF | 16 ns | 13ns | 8 ns | 59 ns | 21A | 30V | 1000V | N-Channel | 7900pF @ 25V | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 21A Tc | 500nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX30N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx30n110p-datasheets-0978.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 48ns | 52 ns | 83 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 1100V | 960W Tc | 75A | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 360m Ω @ 15A, 10V | 6.5V @ 1mA | 30A Tc | 235nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT50M75JLLU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m75jllu3-datasheets-0979.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 290W | 1 | FET General Purpose Power | 10 ns | 20ns | 5 ns | 21 ns | 51A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 290W Tc | 0.075Ohm | 2500 mJ | N-Channel | 5590pF @ 25V | 75m Ω @ 25.5A, 10V | 5V @ 1mA | 51A Tc | 123nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT50M65LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m65b2fllg-datasheets-0961.pdf | 500V | 67A | TO-264-3, TO-264AA | Lead Free | 3 | 23 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 694W | 1 | R-PSFM-T3 | 12 ns | 28ns | 30 ns | 29 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 268A | 0.065Ohm | 3000 mJ | N-Channel | 7010pF @ 25V | 65m Ω @ 33.5A, 10V | 5V @ 2.5mA | 67A Tc | 141nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFK30N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx30n110p-datasheets-0978.pdf | TO-264-3, TO-264AA | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 48ns | 52 ns | 83 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 1100V | 960W Tc | 75A | 0.36Ohm | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 360m Ω @ 15A, 10V | 6.5V @ 1mA | 30A Tc | 235nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT6010LLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6010lllg-datasheets-0983.pdf | 600V | 54A | TO-264-3, TO-264AA | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 690W | 690W | 1 | TO-264 [L] | 6.71nF | 12 ns | 19ns | 9 ns | 34 ns | 54A | 30V | 600V | N-Channel | 6710pF @ 25V | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 54A Tc | 150nC @ 10V | 100 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR26N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n120p-datasheets-0984.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 55ns | 58 ns | 76 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 320W Tc | 60A | 0.5Ohm | 1500 mJ | 1.2kV | N-Channel | 14000pF @ 25V | 500m Ω @ 13A, 10V | 6.5V @ 1mA | 15A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT1201R2BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1201r2bfllg-datasheets-0970.pdf | 1.2kV | 12A | TO-247-3 | Lead Free | No | 403W | 403W | 1 | TO-247 [B] | 2.54nF | 8 ns | 18ns | 21 ns | 29 ns | 12A | 30V | 1200V | N-Channel | 2540pF @ 25V | 1.25Ohm @ 6A, 10V | 5V @ 1mA | 12A Tc | 100nC @ 10V | 1.25 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR210P10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr210p10t-datasheets-0971.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 195A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 595W Tc | 158A | 800A | 0.008Ohm | 3000 mJ | P-Channel | 69500pF @ 25V | 8m Ω @ 105A, 10V | 4.5V @ 250μA | 195A Tc | 740nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| IXKN40N60C | IXYS | $34.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkn40n60c-datasheets-0972.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 290W | 1 | FET General Purpose Power | Not Qualified | 30ns | 10 ns | 110 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 290W Tc | 0.07Ohm | 1800 mJ | 600V | N-Channel | 70m Ω @ 500mA, 10V | 3.9V @ 2.5mA | 40A Tc | 250nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX80N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n50q3-datasheets-3668.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 65MOhm | 247 | AVALANCHE RATED | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30 ns | 250ns | 43 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 240A | 500V | N-Channel | 10000pF @ 25V | 65m Ω @ 40A, 10V | 6.5V @ 8mA | 80A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFX52N60Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfk52n60q2-datasheets-0927.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 13ns | 8.5 ns | 56 ns | 52A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 208A | 0.115Ohm | 4000 mJ | 600V | N-Channel | 6800pF @ 25V | 115m Ω @ 500mA, 10V | 4.5V @ 8mA | 52A Tc | 198nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| MMIX1T600N04T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SupreMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mmix1t600n04t2-datasheets-0954.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 28 Weeks | 24 | yes | EAR99 | AVALANCHE RATED | DUAL | GULL WING | NOT SPECIFIED | 21 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G21 | 40 ns | 90 ns | 600A | 20V | SILICON | ISOLATED | SWITCHING | 830W Tc | 2000A | 0.0013Ohm | 3000 mJ | 40V | N-Channel | 40000pF @ 25V | 1.3m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| APT36N90BC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt36ga60bd15-datasheets-3490.pdf | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | 3 | 22 Weeks | 38.000013g | No SVHC | 3 | OBSOLETE (Last Updated: 1 month ago) | EAR99 | AVALANCHE RATED | No | SINGLE | 3 | 390W | 1 | 70 ns | 20ns | 25 ns | 400 ns | 36mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 390W Tc | 96A | 900V | N-Channel | 7463pF @ 25V | 3 V | 120m Ω @ 18A, 10V | 3.5V @ 2.9mA | 36A Tc | 252nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTK110N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk110n30-datasheets-0956.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 730W | 1 | Not Qualified | 40ns | 30 ns | 110 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 730W Tc | 440A | 0.026Ohm | 4000 mJ | 300V | N-Channel | 7800pF @ 25V | 26m Ω @ 500mA, 10V | 4V @ 250μA | 110A Tc | 390nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFR64N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n50q3-datasheets-0957.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 36 ns | 250ns | 46 ns | 45A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 160A | 0.094Ohm | 4000 mJ | 500V | N-Channel | 6950pF @ 25V | 95m Ω @ 32A, 10V | 6.5V @ 4mA | 45A Tc | 145nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT50M65LLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m65lllg-datasheets-0960.pdf | 500V | 67A | TO-264-3, TO-264AA | Lead Free | 3 | 23 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 694W | 1 | R-PSFM-T3 | 12 ns | 28ns | 30 ns | 29 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 268A | 0.065Ohm | 3000 mJ | N-Channel | 7010pF @ 25V | 65m Ω @ 33.5A, 10V | 5V @ 2.5mA | 67A Tc | 141nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT50M65B2FLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt50m65b2fllg-datasheets-0961.pdf | 500V | 67A | TO-247-3 Variant | Lead Free | 3 | 26 Weeks | 3 | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 694W | 1 | 12 ns | 28ns | 30 ns | 29 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 268A | 0.065Ohm | N-Channel | 7010pF @ 25V | 65m Ω @ 33.5A, 10V | 5V @ 2.5mA | 67A Tc | 141nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTN32P60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtn32p60p-datasheets-0963.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 27ns | 33 ns | 95 ns | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 96A | 0.35Ohm | 3500 mJ | 600V | P-Channel | 11100pF @ 25V | 350m Ω @ 500mA, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APT10045LFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10045b2fllg-datasheets-0939.pdf | 1kV | 23A | TO-264-3, TO-264AA | Lead Free | No | 565W | 565W | 1 | TO-264 [L] | 4.35nF | 10 ns | 5ns | 8 ns | 30 ns | 23A | 30V | 1000V | N-Channel | 4350pF @ 25V | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 23A Tc | 154nC @ 10V | 460 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT38F80B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt38f80l-datasheets-1483.pdf | TO-247-3 Variant | Lead Free | 3 | 33 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1.04kW | 1 | FET General Purpose Power | R-PSIP-T3 | 46 ns | 65ns | 60 ns | 200 ns | 41A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 1040W Tc | TO-247AB | 0.24Ohm | N-Channel | 8070pF @ 25V | 240m Ω @ 20A, 10V | 5V @ 2.5mA | 41A Tc | 260nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT58M50JU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt58m50ju2-datasheets-0967.pdf | SOT-227-4, miniBLOC | 36 Weeks | 4 | EAR99 | No | 1 | FET General Purpose Power | 60 ns | 70ns | 50 ns | 155 ns | 58A | 30V | 500V | 543W Tc | N-Channel | 10800pF @ 25V | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 58A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5010JLLU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jllu3-datasheets-0968.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | 4 | 36 Weeks | 30.000004g | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 378W | 1 | FET General Purpose Power | 11 ns | 15ns | 3 ns | 25 ns | 41A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 378W Tc | N-Channel | 4360pF @ 25V | 100m Ω @ 23A, 10V | 5V @ 2.5mA | 41A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFR24N90Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | ISOPLUS247™ | 3 | Single | 400mOhm | 900V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKG25N80C | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixkg25n80c-datasheets-0933.pdf | ISO264™ | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 25ns | 10 ns | 75 ns | 25A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 0.15Ohm | 690 mJ | 800V | N-Channel | 150m Ω @ 9A, 10V | 4V @ 2mA | 25A Tc | 166nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN100N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 23MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | Not Qualified | 80ns | 30 ns | 75 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 200V | N-Channel | 9000pF @ 25V | 23m Ω @ 500mA, 10V | 4V @ 8mA | 100A Tc | 380nC @ 10V | 10V | ±20V |
