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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFX20N120 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120-datasheets-0789.pdf | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 750mOhm | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 780W | 1 | 45ns | 20 ns | 75 ns | 20A | 30V | 1.2kV | SILICON | DRAIN | SWITCHING | 1200V | 4.5V | 780W Tc | 300 ns | 80A | 2000 mJ | 1.2kV | N-Channel | 7400pF @ 25V | 4.5 V | 750m Ω @ 500mA, 10V | 4.5V @ 8mA | 20A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTH24N50L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixth24n50l-datasheets-0767.pdf | TO-247-3 | Lead Free | 3 | 19 Weeks | 230mOhm | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 85ns | 75 ns | 110 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 50A | 500V | N-Channel | 2500pF @ 25V | 300m Ω @ 500mA, 20V | 5V @ 250μA | 24A Tc | 160nC @ 20V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK150N30P3 | IXYS | $18.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n30p3-datasheets-3408.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 30 Weeks | No SVHC | 3 | EAR99 | Single | 44 ns | 74 ns | 150A | 20V | 300V | 5V | 1300W Tc | N-Channel | 12100pF @ 25V | 19m Ω @ 75A, 10V | 5V @ 8mA | 150A Tc | 197nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R017C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipw60r017c7xksa1-datasheets-0772.pdf | TO-247-3 | 25.4mm | 3 | 18 Weeks | yes | EAR99 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 446W | 1 | 150°C | R-PSFM-T3 | 30 ns | 106 ns | 109A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 650V | METAL-OXIDE SEMICONDUCTOR | 495A | 15mOhm | 582 mJ | 600V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR16N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfr16n120p-datasheets-0751.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | 28ns | 35 ns | 66 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 230W Tc | 9A | 800 mJ | 1.2kV | N-Channel | 6900pF @ 25V | 1.04 Ω @ 8A, 10V | 6.5V @ 1mA | 9A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK73N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx73n30q-datasheets-0740.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 292A | 0.045Ohm | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60N60SCSG/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | 3 | D3Pak | 7.2nF | 60A | 600V | 431W Tc | N-Channel | 7200pF @ 25V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 60A Tc | 190nC @ 10V | Super Junction | 45 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMD40-06KC | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-fmd4006kc-datasheets-0754.pdf | i4-Pac™-5 | 5 | 32 Weeks | 5 | yes | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 280W | 1 | FET General Purpose Power | Not Qualified | 30ns | 10 ns | 110 ns | 38A | 20V | SILICON | ISOLATED | SWITCHING | 0.07Ohm | 600V | N-Channel | 70m Ω @ 20A, 10V | 3.9V @ 2.7mA | 38A Tc | 250nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK33N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixtk33n50-datasheets-0755.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 170mOhm | 3 | yes | EAR99 | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 30ns | 40 ns | 140 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 500V | N-Channel | 4900pF @ 25V | 170m Ω @ 500mA, 10V | 4V @ 250μA | 33A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx120n25-datasheets-0756.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 38ns | 35 ns | 175 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 0.022Ohm | 250V | N-Channel | 9400pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 8mA | 120A Tc | 400nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR32N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr32n100p-datasheets-0757.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 55ns | 43 ns | 76 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 320W Tc | 75A | 1500 mJ | 1kV | N-Channel | 14200pF @ 25V | 340m Ω @ 16A, 10V | 6.5V @ 1mA | 18A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKR47N60C5 | IXYS | $20.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkr47n60c5-datasheets-0758.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | FET General Purpose Power | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.045Ohm | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK160N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtk160n20-datasheets-0759.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 13MOhm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 730W | 1 | Not Qualified | 38ns | 30 ns | 150 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 730W Tc | 640A | 4000 mJ | 200V | N-Channel | 12900pF @ 25V | 13m Ω @ 500mA, 10V | 4V @ 250μA | 160A Tc | 415nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R017C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipz60r017c7xksa1-datasheets-0760.pdf | 25.22mm | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 446W | 150°C | 30 ns | 106 ns | 109A | 20V | 650V | 15mOhm | 600V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH18N100Q3 | IXYS | $14.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n100q3-datasheets-0763.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 3 | Single | 830W | 1 | FET General Purpose Power | 37 ns | 33ns | 13 ns | 40 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 6.5V | 830W Tc | 60A | 0.66Ohm | 1kV | N-Channel | 4890pF @ 25V | 660m Ω @ 9A, 10V | 6.5V @ 4mA | 18A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT5010B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 500V | 46A | TO-247-3 Variant | Lead Free | 3 | 23 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | 11 ns | 15ns | 3 ns | 25 ns | 46A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | N-Channel | 4360pF @ 25V | 100m Ω @ 23A, 10V | 5V @ 2.5mA | 46A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1T660N04T4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 24-PowerSMD, 21 Leads | 28 Weeks | compliant | 40V | 830W Tc | N-Channel | 44000pF @ 25V | 850μ Ω @ 100A, 10V | 4V @ 250μA | 660A Tc | 860nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX240N15T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk240n15t2-datasheets-4940.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 247 | 1 | yes | EAR99 | AVALANCHE RATED | 120A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 150V | 240A | 48 ns | 125ns | 145 ns | 77 ns | 240A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 600A | 0.0052Ohm | 2000 mJ | N-Channel | 32000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 240A Tc | 460nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFP7N80PM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n80pm-datasheets-0750.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSFM-T3 | 55 ns | 3.5A | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 300 mJ | 800V | N-Channel | 1890pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 3.5A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK32P60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk32p60p-datasheets-0724.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN/SILVER/COPPER (SN/AG/CU) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 890W Tc | 96A | P-Channel | 11100pF @ 25V | 350m Ω @ 16A, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKR40N60C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixkr40n60c-datasheets-0726.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | No SVHC | 70MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 280W | 3 | Single | 280W | 1 | FET General Purpose Power | 2.5kV | 30ns | 10 ns | 110 ns | 38A | 20V | SILICON | ISOLATED | SWITCHING | 3.9V | 600V | N-Channel | 70m Ω @ 25A, 10V | 3.9V @ 3mA | 38A Tc | 250nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPZA60R024P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipza60r024p7xksa1-datasheets-0728.pdf | TO-247-4 | 18 Weeks | 600V | 291W Tc | N-Channel | 7144pF @ 400V | 24m Ω @ 42A, 10V | 4V @ 2.03mA | 101A Tc | 164nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R065C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipa65r065c7xksa1-datasheets-0730.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 17 ns | 14ns | 7 ns | 72 ns | 15A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 19A | 145A | 0.065Ohm | 171 mJ | N-Channel | 3020pF @ 400V | 65m Ω @ 17.1A, 10V | 4V @ 850μA | 15A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR44N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfr44n50q-datasheets-0735.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 34A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 34A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfk170n20p-datasheets-0736.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 170A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1250W Tc | 400A | 4000 mJ | N-Channel | 11400pF @ 25V | 14m Ω @ 500mA, 10V | 5V @ 1mA | 170A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT75F50B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt75f50l-datasheets-0720.pdf | TO-247-3 Variant | 23 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 1.04kW | 1 | T-MAX™ [B2] | 11.6nF | 45 ns | 55ns | 39 ns | 120 ns | 75A | 30V | 500V | 1040W Tc | N-Channel | 11600pF @ 25V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 75A Tc | 290nC @ 10V | 75 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK600N04T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx600n04t2-datasheets-0723.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40V | 600A | 40 ns | 20ns | 250 ns | 90 ns | 600A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.5m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFK220N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfk220n15p-datasheets-0739.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 1250W Tc | 600A | 0.009Ohm | 3000 mJ | N-Channel | 15400pF @ 25V | 9m Ω @ 500mA, 10V | 4.5V @ 8mA | 220A Tc | 162nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX73N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx73n30q-datasheets-0740.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 36ns | 12 ns | 82 ns | 73A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 292A | 0.045Ohm | 2500 mJ | 300V | N-Channel | 5400pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 4mA | 73A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH140N075L2 | IXYS | $20.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth140n075l2-datasheets-0741.pdf | TO-247-3 | 28 Weeks | compliant | 75V | 540W Tc | N-Channel | 9300pF @ 25V | 11m Ω @ 70A, 10V | 4.5V @ 250μA | 140A Tc | 275nC @ 10V | 10V | ±20V |
