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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTT10P50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixtt10p50-datasheets-0808.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 40A | 0.9Ohm | -500V | P-Channel | 4700pF @ 25V | 900m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFK32N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n60-datasheets-0809.pdf | TO-264-3, TO-264AA | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 45ns | 60 ns | 100 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 128A | 0.15Ohm | 600V | N-Channel | 9000pF @ 25V | 250m Ω @ 500mA, 10V | 4.5V @ 8mA | 32A Tc | 325nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH23N80Q | IXYS | $3.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n80q-datasheets-0782.pdf | TO-247-3 | 3 | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 27ns | 14 ns | 74 ns | 23A | 30V | SILICON | DRAIN | 500W Tc | TO-247AD | 92A | 0.4Ohm | 1500 mJ | 800V | N-Channel | 4900pF @ 25V | 420m Ω @ 500mA, 10V | 4.5V @ 3mA | 23A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTH58N25L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 28 Weeks | compliant | 250V | 540W Tc | N-Channel | 9200pF @ 25V | 64m Ω @ 29A, 10V | 4.5V @ 250μA | 58A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX170N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20p-datasheets-0736.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1250W Tc | 400A | 0.014Ohm | 4000 mJ | N-Channel | 11400pF @ 25V | 14m Ω @ 500mA, 10V | 5V @ 1mA | 170A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| APT8065BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8065bvfrg-datasheets-0795.pdf | 800V | 12A | TO-247-3 | Lead Free | No | 280W | 1 | TO-247 [B] | 3.7nF | 12 ns | 11ns | 12 ns | 60 ns | 13A | 30V | 800V | N-Channel | 3700pF @ 25V | 650mOhm @ 500mA, 10V | 4V @ 1mA | 13A Tc | 225nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT6029SLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6029bllg-datasheets-0555.pdf | 600V | 21A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 20 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 300W | 1 | D3 [S] | 2.61nF | 9 ns | 5ns | 4 ns | 23 ns | 21A | 30V | 600V | N-Channel | 2615pF @ 25V | 290mOhm @ 10.5A, 10V | 5V @ 1mA | 21A Tc | 65nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFT18N100Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n100q3-datasheets-0763.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 830W | 1 | FET General Purpose Power | R-PSSO-G2 | 37 ns | 32ns | 13 ns | 40 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 830W Tc | 60A | 0.66Ohm | 1500 mJ | 1kV | N-Channel | 4890pF @ 25V | 660m Ω @ 9A, 10V | 6.5V @ 4mA | 18A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTH06N220P3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth06n220p3hv-datasheets-0798.pdf | TO-247-3 Variant | 24 Weeks | compliant | 2200V | 104W Tc | N-Channel | 290pF @ 25V | 80 Ω @ 300mA, 10V | 4V @ 250μA | 600mA Tc | 10.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6021BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6021bfllg-datasheets-0799.pdf | 600V | 29A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 400W | 400W | 1 | TO-247 [B] | 3.47nF | 10 ns | 7ns | 4 ns | 25 ns | 29A | 30V | 600V | N-Channel | 3470pF @ 25V | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 29A Tc | 80nC @ 10V | 210 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFK150N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n10-datasheets-3450.pdf | TO-264-3, TO-264AA | TO-264AA (IXFK) | 9nF | 150A | 100V | 500W Tc | N-Channel | 9000pF @ 25V | 12mOhm @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 12 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK48N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfx48n50q-datasheets-2086.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 100MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 33 ns | 22ns | 10 ns | 75 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 192A | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 100m Ω @ 24A, 10V | 4V @ 4mA | 48A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTA24N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth24n65x2-datasheets-0403.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 650V | 390W Tc | N-Channel | 2060pF @ 25V | 145m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX40N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfx40n90p-datasheets-0804.pdf | TO-247-3 | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50ns | 46 ns | 77 ns | 40A | SILICON | DRAIN | SWITCHING | 960W Tc | 80A | 0.21Ohm | 1500 mJ | 900V | N-Channel | 14000pF @ 25V | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 40A Tc | 230nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFK27N80 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfk27n80-datasheets-0806.pdf | 800V | 27A | TO-264-3, TO-264AA | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 80ns | 40 ns | 75 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 108A | 800V | N-Channel | 9740pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 8mA | 27A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFK44N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n50q-datasheets-2086.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 22ns | 10 ns | 75 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 44A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT41M80B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt41m80b2-datasheets-0791.pdf | 800V | 41A | TO-247-3 Variant | Lead Free | 3 | 29 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | R-PSIP-T3 | 46 ns | 65ns | 60 ns | 200 ns | 43A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1040W Tc | TO-247AD | N-Channel | 8070pF @ 25V | 210m Ω @ 20A, 10V | 5V @ 2.5mA | 43A Tc | 260nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| PCFD18N20W | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 150°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-pcfd18n20w-datasheets-3438.pdf | 4 Weeks | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH30N25L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 28 Weeks | compliant | 250V | 355W Tc | N-Channel | 3200pF @ 25V | 140m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKF40N60SCD1 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixkf40n60scd1-datasheets-0775.pdf | i4-Pac™-5 (3 Leads) | Lead Free | 3 | 32 Weeks | 70MOhm | 5 | yes | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 280W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30ns | 10 ns | 110 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 38A | 600V | N-Channel | 70m Ω @ 25A, 10V | 3.9V @ 3mA | 41A Tc | 250nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX250N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx250n10p-datasheets-0776.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 250A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1250W Tc | 700A | 0.0065Ohm | 3000 mJ | N-Channel | 16000pF @ 25V | 6.5m Ω @ 50A, 10V | 5V @ 1mA | 250A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK73N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixfk73n30-datasheets-0777.pdf | 300V | 73A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | FET General Purpose Power | 80ns | 50 ns | 100 ns | 73A | 20V | 300V | SILICON | DRAIN | SWITCHING | 4V | 500W Tc | 292A | 300V | N-Channel | 9000pF @ 25V | 4 V | 45m Ω @ 500mA, 10V | 4V @ 8mA | 73A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXKH47N60C | IXYS | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkh47n60c-datasheets-0779.pdf | TO-247-3 | Lead Free | 3 | 61 Weeks | 70MOhm | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 290W | 1 | FET General Purpose Power | R-PSFM-T3 | 27ns | 10 ns | 111 ns | 47A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 600V | N-Channel | 70m Ω @ 30A, 10V | 4V @ 2mA | 47A Tc | 650nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK32N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfk32n100p-datasheets-0781.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 55ns | 43 ns | 76 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 960W Tc | 75A | 0.32Ohm | 1500 mJ | 1kV | N-Channel | 14200pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFT23N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n80q-datasheets-0782.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 53 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 14 ns | 74 ns | 23A | 30V | SILICON | DRAIN | 500W Tc | 92A | 0.4Ohm | 1500 mJ | 800V | N-Channel | 4900pF @ 25V | 420m Ω @ 500mA, 10V | 4.5V @ 3mA | 23A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT8043BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8043bllg-datasheets-0783.pdf | 800V | 20A | TO-247-3 | Lead Free | No | 1.04kW | 403W | 1 | 9 ns | 5ns | 5 ns | 25 ns | 20A | 30V | N-Channel | 2500pF @ 25V | 430m Ω @ 5A, 10V | 5V @ 1mA | 20A Tc | 85nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX80N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk80n50p-datasheets-2108.pdf | 500V | 80A | TO-247-3 | Lead Free | 3 | 30 Weeks | 65MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.04kW | 1 | Not Qualified | 27ns | 16 ns | 70 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 200A | 500V | N-Channel | 12700pF @ 25V | 65m Ω @ 40A, 10V | 5V @ 8mA | 80A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT6021BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6021bllg-datasheets-0786.pdf | 600V | 29A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 400W | 400W | 1 | TO-247 [B] | 3.47nF | 10 ns | 7ns | 4 ns | 25 ns | 29A | 30V | 600V | N-Channel | 3470pF @ 25V | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 29A Tc | 80nC @ 10V | 210 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFR230N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr230n20t-datasheets-0787.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 156A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 600W Tc | 630A | 0.008Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 8m Ω @ 60A, 10V | 5V @ 8mA | 156A Tc | 378nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFK250N10P | IXYS | $23.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx250n10p-datasheets-0776.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 250A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1250W Tc | 700A | 0.0065Ohm | N-Channel | 16000pF @ 25V | 6.5m Ω @ 50A, 10V | 5V @ 1mA | 250A Tc | 205nC @ 10V | 10V | ±20V |
