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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM15N50CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm15n50cic0g-datasheets-2958.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 500V | N-Channel | 2263pF @ 25V | 440m Ω @ 7A, 10V | 4V @ 250μA | 14A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6011ENJTL | ROHM Semiconductor | $3.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | No SVHC | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 40W Tc | 22A | 0.39Ohm | 210 mJ | N-Channel | 670pF @ 25V | 390m Ω @ 3.8A, 10V | 4V @ 1mA | 11A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| R6012FNJTL | ROHM Semiconductor | $3.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | SC | Lead Free | 2 | 10 Weeks | 83 | not_compliant | 50W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 1.3nF | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 48A | 0.51Ohm | 9.6 mJ | 510 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA05N100HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta05n100hv-datasheets-3022.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 750mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 40W Tc | 0.75A | 3A | 100 mJ | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFY4N85X | IXYS | $3.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n85x-datasheets-2710.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | yes | 850V | 150W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB11NK50ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp11nk50zfp-datasheets-8299.pdf | 500V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | No SVHC | 520mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB11N | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 14.5 ns | 18ns | 15 ns | 41 ns | 4.5A | 30V | 500V | SILICON | SWITCHING | 3.75V | 125W Tc | 40A | 500V | N-Channel | 1390pF @ 25V | 3.75 V | 520m Ω @ 4.5A, 10V | 4.5V @ 100μA | 10A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| 2SK3892 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3892-datasheets-3043.pdf | 200V | 22A | TO-220-3 Full Pack | Lead Free | 3 | yes | EAR99 | unknown | 8541.29.00.95 | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 40W Tc | TO-220AB | 88A | 0.062Ohm | 986 mJ | N-Channel | 3177pF @ 25V | 62m Ω @ 11A, 10V | 4.5V @ 1mA | 22A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP75N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixta75n10p-datasheets-5494.pdf | TO-220-3 | 9.15mm | Lead Free | 3 | 24 Weeks | No SVHC | 25MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | 1 | Single | 360W | 1 | 27 ns | 53ns | 45 ns | 66 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 5.5V | 360W Tc | TO-220AB | 200A | 100V | N-Channel | 2250pF @ 25V | 25m Ω @ 500mA, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| R6511KNJTL | ROHM Semiconductor | $6.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6511knjtl-datasheets-3020.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 124W Tc | 11A | 33A | 0.4Ohm | 223 mJ | N-Channel | 760pF @ 25V | 400m Ω @ 3.8A, 10V | 5V @ 320μA | 11A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL75NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl75nh3ll-datasheets-3030.pdf | 8-PowerVDFN | Lead Free | 5 | No SVHC | 5.7mOhm | 8 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) - annealed | DUAL | NO LEAD | 260 | STL75 | 8 | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N5 | 65ns | 20 ns | 30 ns | 75A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 60W Tc | 20A | 30V | N-Channel | 1810pF @ 25V | 1 V | 5.7m Ω @ 10A, 10V | 1V @ 250μA | 75A Tc | 24nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| R6020FNJTL | ROHM Semiconductor | $4.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | SC | 2 | 10 Weeks | 83 | not_compliant | 50W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 2.35nF | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 80A | 220mOhm | 26.7 mJ | 280 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB10LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb10ln80k5-datasheets-2712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STB10LN | NOT SPECIFIED | 800V | 110W Tc | N-Channel | 427pF @ 100V | 630m Ω @ 4A, 10V | 5V @ 100μA | 8A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP16N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfp16n50p3-datasheets-3145.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 3 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 19 ns | 44 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 330W Tc | TO-220AB | 40A | N-Channel | 1515pF @ 25V | 360m Ω @ 8A, 10V | 5V @ 2.5mA | 16A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFSL6535 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfsl6535-datasheets-2914.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 19A | Single | 300V | 210W Tc | N-Channel | 2340pF @ 25V | 185m Ω @ 11A, 10V | 5V @ 150μA | 19A Tc | 57nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6008FNX | ROHM Semiconductor | $3.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | 3 | yes | No | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | 20 ns | 25ns | 30 ns | 60 ns | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 8A | 0.95Ohm | N-Channel | 580pF @ 25V | 950m Ω @ 4A, 10V | 4V @ 1mA | 8A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTP24N65X2M | IXYS | $4.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtp24n65x2m-datasheets-2826.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 650V | 37W Tc | N-Channel | 2060pF @ 25V | 145m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP20N50F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdpf20n50ft-datasheets-1214.pdf | TO-220-3 | 3 | 6 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 45 ns | 120ns | 60 ns | 100 ns | 20A | 30V | SILICON | SWITCHING | 250W Tc | TO-220AB | 80A | 0.26Ohm | 500V | N-Channel | 3390pF @ 25V | 260m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTY18P10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtp18p10t-datasheets-2547.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 26ns | 22 ns | 44 ns | 18A | 15V | SILICON | DRAIN | SWITCHING | 100V | 100V | 83W Tc | 60A | 0.12Ohm | 200 mJ | P-Channel | 2100pF @ 25V | 120m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP06N120P | IXYS | $16.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarVHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta06n120p-datasheets-0969.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | 24ns | 27 ns | 50 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 1200V | 42W Tc | TO-220AB | 0.6A | 1.2A | 50 mJ | 1.2kV | N-Channel | 270pF @ 25V | 32 Ω @ 500mA, 10V | 4.5V @ 50μA | 600mA Tc | 13.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STH170N8F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sth170n8f72-datasheets-2760.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STH170 | NOT SPECIFIED | 120A | 80V | 250W Tc | N-Channel | 8710pF @ 40V | 3.7m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB150N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb150n10-datasheets-2420.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | 15MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 47 ns | 164ns | 83 ns | 86 ns | 57A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 228A | 100V | N-Channel | 4760pF @ 25V | 15m Ω @ 49A, 10V | 4.5V @ 250μA | 57A Tc | 69nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TSM80N1R2CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n1r2cic0g-datasheets-2867.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 24 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 25W Tc | TO-220AB | 5.5A | 16.5A | 121 mJ | N-Channel | 685pF @ 100V | 1.2 Ω @ 1.8A, 10V | 4V @ 250μA | 5.5A Tc | 19.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB20S60L | Alpha & Omega Semiconductor Inc. | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 266W Tc | 80A | N-Channel | 1038pF @ 100V | 199m Ω @ 10A, 10V | 4.1V @ 250μA | 20A Tc | 19.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB2552-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb2552f085-datasheets-2818.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | Single | 150W | FET General Purpose Power | 12 ns | 29ns | 29 ns | 36 ns | 37A | 20V | 150W Tc | 150V | N-Channel | 2800pF @ 25V | 36m Ω @ 16A, 10V | 4V @ 250μA | 5A Ta 37A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540STRRPBF | Vishay Siliconix | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | Tin | No | 1 | Single | 3.7W | 1 | D2PAK (TO-263) | 1.7nF | 11 ns | 44ns | 43 ns | 53 ns | 28A | 20V | 100V | 3.7W Ta 150W Tc | 77mOhm | 100V | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R3-120ESQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn6r3120esq-datasheets-2903.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 20 Weeks | 3 | No | NO | 3 | 1 | Single | 1 | 42.1 ns | 58.2ns | 67.7 ns | 142.1 ns | 70A | 20V | 120V | SILICON | DRAIN | SWITCHING | 405W Tc | 280A | 0.0067Ohm | N-Channel | 11384pF @ 60V | 6.7m Ω @ 25A, 10V | 4V @ 250μA | 70A Tc | 207.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP20N50P3M | IXYS | $4.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp20n50p3m-datasheets-2906.pdf | TO-220-3 | 3 | 26 Weeks | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 58W Tc | TO-220AB | 8A | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP450P2 | IXYS | $14.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth450p2-datasheets-0479.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 750 mJ | 500V | N-Channel | 2530pF @ 25V | 330m Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA10N80P | IXYS | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80p-datasheets-2794.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SUM60030E-GE3 | Vishay Siliconix | $6.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum60030ege3-datasheets-2809.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 375W Tc | 250A | 0.0032Ohm | 245 mJ | N-Channel | 7910pF @ 40V | 3.2m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 141nC @ 10V | 7.5V 10V | ±20V |
