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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM60030E-GE3 | Vishay Siliconix | $6.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum60030ege3-datasheets-2809.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 375W Tc | 250A | 0.0032Ohm | 245 mJ | N-Channel | 7910pF @ 40V | 3.2m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 141nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N06-06_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n0606ge3-datasheets-2619.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 60V | 230W Tc | N-Channel | 6495pF @ 25V | 6mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH150N10F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sth150n10f72-datasheets-2796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.8mm | 10.57mm | Lead Free | 37 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STH150 | 1 | Single | NOT SPECIFIED | 33 ns | 57ns | 33 ns | 72 ns | 110A | 20V | 250W Tc | 100V | N-Channel | 8115pF @ 50V | 3.9m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 117nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N70X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixty8n70x2-datasheets-0423.pdf | TO-220-3 | 15 Weeks | yes | 700V | 150W Tc | N-Channel | 800pF @ 10V | 500m Ω @ 500mA, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N600ACL X0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n600aclx0g-datasheets-2668.pdf | TO-262-3 Short Leads, I2Pak | 24 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 83W Tc | N-Channel | 743pF @ 100V | 600m Ω @ 2.4A, 10V | 4V @ 250μA | 8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7E5R2-100E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e5r2100e127-datasheets-2682.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.299997g | 3 | AVALANCHE RATED | No | e3 | Tin (Sn) | NO | 3 | 1 | Single | 1 | 37 ns | 62ns | 80 ns | 158 ns | 120A | 20V | 100V | SILICON | DRAIN | SWITCHING | 349W Tc | 0.0052Ohm | 100V | N-Channel | 11810pF @ 25V | 5.2m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SQJQ404E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq404et1ge3-datasheets-2688.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® 8 x 8 | 40V | 150W Tc | N-Channel | 16480pF @ 25V | 1.72mOhm @ 20A, 10V | 3.5V @ 250μA | 200A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N85X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n85x-datasheets-2710.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 850V | 150W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM8N80CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm8n80czc0g-datasheets-2715.pdf | TO-220-3 | 24 Weeks | TO-220 | 800V | 40.3W Tc | N-Channel | 1921pF @ 25V | 1.05Ohm @ 4A, 10V | 4V @ 250μA | 8A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR890DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir890dpt1ge3-datasheets-2224.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | Unknown | 2.9mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 30 ns | 18ns | 25 ns | 40 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.6V | 5W Ta 50W Tc | 30A | 70A | 20V | N-Channel | 2747pF @ 10V | 2.9m Ω @ 10A, 10V | 2.6V @ 250μA | 50A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| STH145N8F7-2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sth145n8f72ag-datasheets-2685.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STH145 | NOT SPECIFIED | 1 | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 200W Tc | 360A | 0.004Ohm | 515 mJ | N-Channel | 6340pF @ 40V | 4m Ω @ 45A, 10V | 4.5V @ 250μA | 90A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9630STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf9630spbf-datasheets-1938.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 40 | 3W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 27ns | 24 ns | 28 ns | 6.5A | 20V | -200V | SILICON | DRAIN | SWITCHING | 200V | -2V | 3W Ta 74W Tc | 26A | 500 mJ | -200V | P-Channel | 700pF @ 25V | 4 V | 800m Ω @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| SQM110P06-8M9L_GE3 | Vishay Siliconix | $2.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm110p068m9lge3-datasheets-2742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 60V | 230W Tc | P-Channel | 7450pF @ 25V | 8.9mOhm @ 30A, 10V | 2.5V @ 250μA | 110A Tc | 200nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM40010EL_GE3 | Vishay Siliconix | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40010elge3-datasheets-2690.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | No SVHC | 3 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 120A | 40V | 2V | 375W Tc | N-Channel | 17100pF @ 20V | 1.6m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6004SCTBQ-13 | Diodes Incorporated | $2.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6004sctbq13-datasheets-2748.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 22 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 4.7W Ta 136W Tc | N-Channel | 4556pF @ 30V | 3.4m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 95.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM110N05-06L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqm110n0506lge3-datasheets-2346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 157W | 1 | TO-263 (D2Pak) | 4.44nF | 15 ns | 15ns | 15 ns | 35 ns | 110A | 20V | 55V | 2V | 157W Tc | 6mOhm | 55V | N-Channel | 4440pF @ 25V | 2 V | 6mOhm @ 30A, 10V | 2.5V @ 250μA | 110A Tc | 110nC @ 10V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFSL7730PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7730pbf-datasheets-3733.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 12 Weeks | 2.084002g | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 21 ns | 120ns | 115 ns | 180 ns | 195A | 20V | 75V | 375W Tc | N-Channel | 13660pF @ 25V | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 407nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4410ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4410zpbf-datasheets-1895.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 230W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 52ns | 57 ns | 43 ns | 97A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 230W Tc | 0.009Ohm | 242 mJ | 100V | N-Channel | 4820pF @ 50V | 9m Ω @ 58A, 10V | 4V @ 150μA | 97A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PSMN3R0-60BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn3r060bs118-datasheets-2444.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 31 ns | 26ns | 22 ns | 77 ns | 100A | 20V | 60V | SILICON | DRAIN | SWITCHING | 306W Tc | 824A | 800 mJ | 60V | N-Channel | 8079pF @ 30V | 3.2m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF840STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irf840spbf-datasheets-1527.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 850mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD19532Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD19532 | Single | NOT SPECIFIED | 1 | 100A | SILICON | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 195W Tc | 17A | 400A | 0.0057Ohm | 274 mJ | N-Channel | 4810pF @ 50V | 4.9m Ω @ 17A, 10V | 3.2V @ 250μA | 100A Ta | 62nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDPF16N50UT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf16n50ut-datasheets-8456.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38.5W | 1 | FET General Purpose Power | 40 ns | 150ns | 80 ns | 65 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 38.5W Tc | TO-220AB | 60A | 0.48Ohm | 500V | N-Channel | 1945pF @ 25V | 480m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STB9NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk60z-datasheets-3046.pdf | 600V | 7A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 950mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB9N | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 17ns | 15 ns | 43 ns | 7A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | 7A | 28A | 600V | N-Channel | 1110pF @ 25V | 950m Ω @ 3.5A, 10V | 4.5V @ 100μA | 7A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| FDB120N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdb120n10-datasheets-2584.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 170W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27 ns | 105ns | 15 ns | 39 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 170W Tc | 296A | 100V | N-Channel | 5605pF @ 25V | 12m Ω @ 74A, 10V | 4.5V @ 250μA | 74A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| R6509ENJTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6509enjtl-datasheets-2582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 94W Tc | 9A | 27A | 0.585Ohm | 158 mJ | N-Channel | 430pF @ 25V | 585m Ω @ 2.8A, 10V | 4V @ 230μA | 9A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC20STRLPBF | Vishay Siliconix | $2.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc20strlpbf-datasheets-2593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 4.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 3.1W Ta 50W Tc | 4.4Ohm | N-Channel | 350pF @ 25V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFA12N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n50p-datasheets-2145.pdf | 500V | 12A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 27ns | 20 ns | 65 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 30A | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 1mA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| R6509KNJTL | ROHM Semiconductor | $5.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6509knjtl-datasheets-2544.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 94W Tc | 9A | 27A | 0.585Ohm | 158 mJ | N-Channel | 540pF @ 25V | 585m Ω @ 2.8A, 10V | 5V @ 230μA | 9A Tc | 16.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM50020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50020ege3-datasheets-2554.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 375W Tc | N-Channel | 11150pF @ 30V | 2.2mOhm @ 30A, 10V | 4V @ 250μA | 120A Tc | 128nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB150N3LH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb150n3lh6-datasheets-2571.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | STB150N | Single | 110W | 85ns | 40 ns | 100 ns | 80A | 20V | 110W Tc | 30V | N-Channel | 3800pF @ 25V | 3m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 80nC @ 10V | 5V 10V | ±20V |
