| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RSJ400N10FRATL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsj400n10fratl-datasheets-2338.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | not_compliant | 100V | 1.35W Ta 50W Tc | N-Channel | 3600pF @ 25V | 27m Ω @ 40A, 10V | 2.5V @ 1mA | 40A Tc | 90nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD40N08-16-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud40n0816e3-datasheets-2351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 16mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 20 | 3W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 52ns | 10 ns | 25 ns | 40A | 20V | 80V | SILICON | DRAIN | 2V | 3W Ta 136W Tc | 60A | 80V | N-Channel | 1960pF @ 25V | 4 V | 16m Ω @ 40A, 10V | 4V @ 250μA | 40A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIHF12N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf12n60ee3-datasheets-5348.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 380mOhm | 3 | yes | No | 1 | Single | 1 | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 33W Tc | TO-220AB | 27A | N-Channel | 937pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RCJ450N20TL | ROHM Semiconductor | $0.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 83 | EAR99 | No | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 52 ns | 210ns | 70 ns | 90 ns | 45A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 1.56W Ta 40W Tc | 180A | 0.055Ohm | 160 mJ | N-Channel | 4200pF @ 25V | 55m Ω @ 22.5A, 10V | 5V @ 1mA | 45A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STB22N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb22n60m6-datasheets-2298.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 130W Tc | N-Channel | 800pF @ 100V | 230m Ω @ 7.5A, 10V | 4.75V @ 250μA | 15A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irl540spbf-datasheets-3549.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 77mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 2.2nF | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | 100V | 3.7W Ta 150W Tc | 77mOhm | 100V | N-Channel | 2200pF @ 25V | 77mOhm @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 77 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ410EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq410elt1ge3-datasheets-2441.pdf | 8-PowerTDFN | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100V | 136W Tc | N-Channel | 7350pF @ 25V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 135A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7E80W,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | TO-220 | 800V | 110W Tc | N-Channel | 700pF @ 300V | 950mOhm @ 3.3A, 10V | 4V @ 280μA | 6.5A Ta | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5016FNJTL | ROHM Semiconductor | $6.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | SC | 2 | 10 Weeks | 83 | not_compliant | 50W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 1.7nF | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 64A | 0.325Ohm | 17.1 mJ | 325 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF18N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihf18n50de3-datasheets-2494.pdf | TO-220-3 Full Pack | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 1 | FET General Purpose Powers | 19 ns | 36ns | 30 ns | 36 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 39W Tc | TO-220AB | 0.28Ohm | 500V | N-Channel | 1500pF @ 100V | 280m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 76nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8860 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdb8860-datasheets-2429.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | 2 | 10 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 254W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 213ns | 49 ns | 79 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 254W Tc | 0.0027Ohm | 947 mJ | 30V | N-Channel | 12585pF @ 15V | 2.3m Ω @ 80A, 10V | 3V @ 250μA | 80A Tc | 214nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STB24N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw24n60dm2-datasheets-3970.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STB24N | NOT SPECIFIED | 1 | R-PSSO-G2 | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 150W Tc | 72A | 0.2Ohm | 180 mJ | N-Channel | 1055pF @ 100V | 200m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | 180mOhm | 3 | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 130W | 1 | R-PSSO-G2 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 130W Tc | 72A | 580 mJ | 200V | N-Channel | 1300pF @ 25V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF740STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 11 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 400V | 400V | 3.1W Ta 125W Tc | 40A | 0.55Ohm | 520 mJ | N-Channel | 1400pF @ 25V | 550m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PSMNR90-40YLHX | Nexperia USA Inc. | $3.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmnr9040ylhx-datasheets-2331.pdf | SOT-1023, 4-LFPAK | 12 Weeks | 40V | 333W Ta | N-Channel | 12673pF @ 20V | 940μ Ω @ 25A, 10V | 2.05V @ 1mA | 300A Ta | 168nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL60N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl60n10f7-datasheets-2333.pdf | 8-PowerVDFN | 5.4mm | 950μm | 6.35mm | Lead Free | 18mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL60 | Single | NOT SPECIFIED | 15.2 ns | 16.8ns | 8 ns | 24 ns | 46A | 20V | 5W Ta 72W Tc | 100V | N-Channel | 1640pF @ 50V | 18m Ω @ 6A, 10V | 4.5V @ 250μA | 46A Tc | 25nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB70P04P409ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb70p04p409atma1-datasheets-2157.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 75W | 1 | R-PSSO-G2 | 19 ns | 15ns | 31 ns | 24 ns | -70A | 20V | -40V | SILICON | DRAIN | P-CHANNEL | 40V | 75W Tc | 72A | 288A | 0.0094Ohm | 24 mJ | -40V | N-Channel | 4810pF @ 25V | 9.1m Ω @ 70A, 10V | 4V @ 120μA | 72A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUM90220E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90220ege3-datasheets-2169.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 230W Tc | 64A | 100A | 0.0216Ohm | 101 mJ | N-Channel | 1950pF @ 100V | 21.6m Ω @ 15A, 10V | 4V @ 250μA | 64A Tc | 48nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB7ANM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std7anm60n-datasheets-6632.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.6mm | 2.4mm | 6.2mm | 26 Weeks | 3 | EAR99 | No | STB7AN | 1 | Single | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | 45W Tc | 600V | N-Channel | 363pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250mA | 5A Tc | 14nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STLD200N4F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stld200n4f6ag-datasheets-1971.pdf | 8-PowerWDFN | 5 | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | YES | DUAL | FLAT | NOT SPECIFIED | STLD20 | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 158W Tc | 120A | 480A | 0.002Ohm | 400 mJ | N-Channel | 10700pF @ 10V | 1.5m Ω @ 75A, 10V | 4V @ 1mA | 120A Tc | 172nC @ 10V | 6.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA7N80C-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa7n80cf109-datasheets-2193.pdf | 3 | 9 Weeks | yes | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 198W | 800V | METAL-OXIDE SEMICONDUCTOR | 7A | 28A | 1.9Ohm | 580 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD16N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf16n50m2-datasheets-4268.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | 3.949996g | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD16 | 1 | Single | NOT SPECIFIED | 9.6 ns | 7.6ns | 10 ns | 32 ns | 13A | 25V | 500V | 110W Tc | 550V | N-Channel | 710pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 19.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK55S10N1,LQ | Toshiba Semiconductor and Storage | $4.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | 11 ns | 11ns | 19 ns | 51 ns | 55A | 20V | 157W Tc | 100V | N-Channel | 3280pF @ 10V | 6.5m Ω @ 27.5A, 10V | 4V @ 500μA | 55A Ta | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50028EM_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sqm50028emge3-datasheets-2171.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 5.08mm | 14 Weeks | 1 | 375W | 175°C | TO-263-7 | 48 ns | 105 ns | 120A | 20V | 60V | 375W Tc | 1.63mOhm | 60V | N-Channel | 11900pF @ 25V | 2mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740ASTRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 550mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 125W Tc | 550mOhm | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N02-1M3L_GE3 | Vishay Siliconix | $2.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n021m3lge3-datasheets-2272.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 20V | 375W Tc | N-Channel | 14500pF @ 10V | 1.3mOhm @ 40A, 10V | 2.5V @ 250μA | 120A Tc | 290nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5A140PLZWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/onsemiconductor-nvmfs5a140plzwft3g-datasheets-9034.pdf | 8-PowerTDFN, 5 Leads | 5 | 30 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 200W Tc | 140A | 560A | 7.2Ohm | 420 mJ | P-Channel | 7400pF @ 20V | 4.2m Ω @ 50A, 10V | 2.6V @ 1mA | 20A Ta 140A Tc | 136nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL630STRRPBF | Vishay Siliconix | $15.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl630spbf-datasheets-4254.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 400mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 3.1W Ta 74W Tc | 400mOhm | N-Channel | 1100pF @ 25V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9620STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf9620spbf-datasheets-8880.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | D2PAK | 350pF | 15 ns | 25ns | 15 ns | 20 ns | -3.5A | 20V | 200V | 3W Ta 40W Tc | 1.5Ohm | -200V | P-Channel | 350pF @ 25V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF8N80 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 3 | 18 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 7.4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 50W Tc | TO-220AB | 26A | 433 mJ | N-Channel | 1650pF @ 25V | 1.63 Ω @ 4A, 10V | 4.5V @ 250μA | 7.4A Tc | 32nC @ 10V | 10V | ±30V |
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