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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK55S10N1,LQ | Toshiba Semiconductor and Storage | $4.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | 11 ns | 11ns | 19 ns | 51 ns | 55A | 20V | 157W Tc | 100V | N-Channel | 3280pF @ 10V | 6.5m Ω @ 27.5A, 10V | 4V @ 500μA | 55A Ta | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50028EM_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sqm50028emge3-datasheets-2171.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 5.08mm | 14 Weeks | 1 | 375W | 175°C | TO-263-7 | 48 ns | 105 ns | 120A | 20V | 60V | 375W Tc | 1.63mOhm | 60V | N-Channel | 11900pF @ 25V | 2mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCJ300N20TL | ROHM Semiconductor | $2.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 83 | EAR99 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 1.56W Ta 40W Tc | 70A | 140A | 0.0427Ohm | 396 mJ | N-Channel | 3200pF @ 25V | 80m Ω @ 15A, 10V | 5V @ 1mA | 30A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6015KNJTL | ROHM Semiconductor | $4.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 184W Tc | 15A | 45A | 0.29Ohm | 284 mJ | N-Channel | 1050pF @ 25V | 290m Ω @ 6.5A, 10V | 5V @ 1mA | 15A Tc | 37.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18532NQ5B |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18532nq5b-datasheets-9325.pdf | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD18532 | Single | 3.2W | 1 | FET General Purpose Power | 8.2 ns | 8.7ns | 2.7 ns | 20 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta | 22A | 0.0044Ohm | 360 mJ | 60V | N-Channel | 5340pF @ 30V | 3.4m Ω @ 25A, 10V | 3.4V @ 250μA | 22A Ta 100A Tc | 64nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STB18N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb18n60m6-datasheets-1919.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 110W Tc | N-Channel | 650pF @ 100V | 280m Ω @ 6.5A, 10V | 4.75V @ 250μA | 13A Tc | 16.8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE874DF-T1-GE3 | Vishay Siliconix | $4.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie874dft1ge3-datasheets-1757.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 30 | 125W | 1 | R-PDSO-N4 | 45 ns | 35ns | 30 ns | 60 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 52A | 0.0016Ohm | 80 mJ | 20V | N-Channel | 6200pF @ 10V | 1.17m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 145nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| N0434N-S23-AY | Renesas Electronics America | $2.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-n0434ns23ay-datasheets-1947.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 3 | EAR99 | No | 4 | 29 ns | 15ns | 13 ns | 64 ns | 100A | 20V | 40V | 1.5W Ta 119W Tc | N-Channel | 5550pF @ 25V | 3.7m Ω @ 50A, 10V | 100A Ta | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS6B14NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs6b14nt3g-datasheets-8311.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 1 | Single | 9.6 ns | 39ns | 6.8 ns | 17 ns | 50A | 20V | 4V | 3.1W Ta 77W Tc | 100V | N-Channel | 1300pF @ 50V | 15m Ω @ 20A, 10V | 4V @ 250μA | 10A Ta 50A Tc | 20nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU8N70X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixty8n70x2-datasheets-0423.pdf | TO-251-3 Stub Leads, IPak | 15 Weeks | yes | 700V | 150W Tc | N-Channel | 800pF @ 10V | 500m Ω @ 500mA, 10V | 4.5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7430DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7430dpt1ge3-datasheets-4795.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 45mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 7 ns | 20 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 5.2W Ta 64W Tc | 7.2A | 50A | 20 mJ | 150V | N-Channel | 1735pF @ 50V | 45m Ω @ 5A, 10V | 4.5V @ 250μA | 26A Tc | 43nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTMFS5C426NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ntmfs5c426nt3g-datasheets-7981.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 128W Tc | N-Channel | 4300pF @ 25V | 1.3m Ω @ 50A, 10V | 3.5V @ 250μA | 41A Ta 235A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP2N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp2n100p-datasheets-1987.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 86W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 29ns | 27 ns | 80 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 86W Tc | TO-220AB | 2A | 5A | 1kV | N-Channel | 655pF @ 25V | 7.5 Ω @ 500mA, 10V | 4.5V @ 100μA | 2A Tc | 24.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUD50P10-43L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-sud50p1043le3-datasheets-1689.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 1 | 30 | 6.9W | 1 | R-PSSO-G2 | 37.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 8.3W Ta 136W Tc | TO-252AA | 40A | 100V | P-Channel | 4600pF @ 50V | 43m Ω @ 9.2A, 10V | 3V @ 250μA | 37.1A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT15S65L | Alpha & Omega Semiconductor Inc. | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | TO-220 | 841pF | 15A | 650V | 208W Tc | N-Channel | 841pF @ 100V | 290mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17.2nC @ 10V | 290 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP12N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf12n50t-datasheets-1468.pdf | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | 650MOhm | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 165W | 1 | FET General Purpose Power | R-PSFM-T3 | 24 ns | 50ns | 30 ns | 45 ns | 11.5A | 30V | SILICON | SWITCHING | 165W Tc | TO-220AB | 46A | 456 mJ | 500V | N-Channel | 1315pF @ 25V | 650m Ω @ 6A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| R6020ENJTL | ROHM Semiconductor | $15.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | No SVHC | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 40W Tc | 60A | 0.196Ohm | 418 mJ | N-Channel | 1400pF @ 25V | 196m Ω @ 9.5A, 10V | 4V @ 1mA | 20A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BMS4007-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-bms40071e-datasheets-1885.pdf | TO-220-3 | Lead Free | 4 Weeks | 3 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | Tin | not_compliant | e3 | NO | 2W | 3 | Single | FET General Purpose Powers | 9.7nF | 100 ns | 180ns | 160 ns | 460 ns | 60A | 20V | N-CHANNEL | 75V | METAL-OXIDE SEMICONDUCTOR | 7.8 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80P04P4L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb80p04p4l06atma1-datasheets-1888.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 88W | 1 | R-PSSO-G2 | 17 ns | 12ns | 44 ns | 61 ns | -80A | 16V | -40V | SILICON | DRAIN | 40V | 88W Tc | 0.0064Ohm | -40V | P-Channel | 6580pF @ 25V | 6.4m Ω @ 80A, 10V | 2.2V @ 150μA | 80A Tc | 104nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| STB8NM60D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb8nm60d-datasheets-1905.pdf | 600V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 1Ohm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB8N | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 10ns | 8 ns | 26 ns | 8A | 30V | SILICON | SWITCHING | 100W Tc | 8A | 200 mJ | 600V | N-Channel | 380pF @ 25V | 1 Ω @ 2.5A, 10V | 5V @ 250μA | 8A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FDB86566-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb86566f085-datasheets-1702.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | 1.31247g | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 110A | 60V | 176W Tj | N-Channel | 6655pF @ 30V | 2.7m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL120N4LF6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl120n4lf6ag-datasheets-1614.pdf | 8-PowerVDFN | 20 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL120 | NOT SPECIFIED | 120A | 40V | 96W Tc | N-Channel | 4260pF @ 25V | 3.6m Ω @ 13A, 10V | 3V @ 250μA | 120A Tc | 80nC @ 10V | 5V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R4-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn4r480ps127-datasheets-1796.pdf | TO-220-3 | 44.45mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 453.59237mg | 3 | No | 100A | e3 | Tin (Sn) | 80V | NO | SINGLE | 3 | 306W | 1 | 34.7 ns | 38.1ns | 18.4 ns | 66 ns | 100A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 306W Tc | TO-220AB | 80V | N-Channel | 8400pF @ 40V | 4.1m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIDR390DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr390dpt1ge3-datasheets-4760.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 30V | 6.25W Ta 125W Tc | N-Channel | 10180pF @ 15V | 0.8mOhm @ 20A, 10V | 2V @ 250μA | 69.9A Ta 100A Tc | 153nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM60N10-17-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sum60n1017e3-datasheets-1806.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 16.5mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 3.75W | 1 | R-PSSO-G2 | 15 ns | 12ns | 10 ns | 30 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3.75W Ta 150W Tc | 80 mJ | 100V | N-Channel | 4300pF @ 25V | 60ns | 16.5m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 100nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK4A60DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 12 Weeks | 3 | No | 35W | 18ns | 8 ns | 3.5A | 30V | 600V | N-Channel | 490pF @ 25V | 2.2 Ω @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6009ENJTL | ROHM Semiconductor | $3.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | No SVHC | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 40W Tc | 9A | 18A | 0.535Ohm | 153 mJ | N-Channel | 430pF @ 25V | 535m Ω @ 2.8A, 10V | 4V @ 1mA | 9A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL630STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irl630spbf-datasheets-4254.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | No SVHC | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 3.1W Ta 74W Tc | 400mOhm | N-Channel | 1100pF @ 25V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB7P20TM-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb7p20tmf085-datasheets-1658.pdf&product=onsemiconductor-fqb7p20tmf085-6852909 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 6 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.13W Ta 90W Tc | 7.3A | 29.2A | 0.69Ohm | 570 mJ | P-Channel | 770pF @ 25V | 690m Ω @ 3.65A, 10V | 5V @ 250μA | 7.3A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCJ220N25TL | ROHM Semiconductor | $5.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 83 | EAR99 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 1.56W Ta 40W Tc | 88A | 0.14Ohm | 36.8 mJ | N-Channel | 3200pF @ 25V | 140m Ω @ 11A, 10V | 5V @ 1mA | 22A Tc | 60nC @ 10V | 10V | ±30V |
