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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STB8NM60D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb8nm60d-datasheets-1905.pdf | 600V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 1Ohm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB8N | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 10ns | 8 ns | 26 ns | 8A | 30V | SILICON | SWITCHING | 100W Tc | 8A | 200 mJ | 600V | N-Channel | 380pF @ 25V | 1 Ω @ 2.5A, 10V | 5V @ 250μA | 8A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FDB86566-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb86566f085-datasheets-1702.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | 1.31247g | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 110A | 60V | 176W Tj | N-Channel | 6655pF @ 30V | 2.7m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20STRLPBF | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 8Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 2.2nF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 3.1W Ta 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 2 V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 9.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB80N03S4L02ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipp80n03s4l03aksa1-datasheets-3199.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 14 ns | 9ns | 13 ns | 62 ns | 80A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 0.0024Ohm | 260 mJ | N-Channel | 9750pF @ 25V | 2.4m Ω @ 80A, 10V | 2.2V @ 90μA | 80A Tc | 140nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN0R9-30ULDX | Nexperia USA Inc. | $0.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn0r930uldx-datasheets-1588.pdf | SOT-1023, 4-LFPAK | 12 Weeks | 30V | 227W Ta | N-Channel | 7668pF @ 15V | 0.87m Ω @ 25A, 10V | 2.2V @ 1mA | 300A Ta | 109nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB60NF10T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp60nf10-datasheets-7956.pdf | 100V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 23mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB60N | 3 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 56ns | 23 ns | 82 ns | 40A | 20V | 100V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | 485 mJ | 100V | N-Channel | 4270pF @ 25V | 3 V | 23m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 104nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| AOW7S60 | Alpha & Omega Semiconductor Inc. | $0.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | No | 104W | 1 | 7A | 30V | 600V | 104W Tc | N-Channel | 372pF @ 100V | 600m Ω @ 3.5A, 10V | 3.9V @ 250μA | 7A Tc | 8.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80P04P407ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb80p04p407atma1-datasheets-1607.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Contains Lead | 2 | 14 Weeks | 1.946308g | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 88W | 1 | R-PSSO-G2 | 25 ns | 15ns | 41 ns | 34 ns | 80A | 20V | -40V | SILICON | DRAIN | 40V | 88W Tc | 0.0077Ohm | P-Channel | 6085pF @ 25V | 7.4m Ω @ 80A, 10V | 4V @ 150μA | 80A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STL18N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl18n60m2-datasheets-1592.pdf | 8-PowerVDFN | Lead Free | 26 Weeks | 278mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL18 | 1 | Single | NOT SPECIFIED | 12 ns | 9ns | 10.6 ns | 47 ns | 9A | 25V | 600V | 57W Tc | N-Channel | 791pF @ 100V | 308m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 21.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF850N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcpf850n80z-datasheets-1649.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 13 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 16 ns | 10ns | 4.5 ns | 40 ns | 6A | 20V | 28.4W Tc | 6A | 800V | N-Channel | 1315pF @ 100V | 850m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S404AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s404atma1-datasheets-9783.pdf | TO-220-3 | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 10 ns | 12ns | 9 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 71W Tc | TO-220AB | 0.0046Ohm | 100 mJ | N-Channel | 3440pF @ 25V | 4.6m Ω @ 80A, 10V | 4V @ 35μA | 80A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STB18N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb18n60dm2-datasheets-1623.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | D2PAK-0079457 | NOT SPECIFIED | STB18N | 1 | NOT SPECIFIED | 110W | 150°C | 13.5 ns | 9.5 ns | 12A | 25V | 4V | 90W Tc | 600V | N-Channel | 800pF @ 100V | 295m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 20nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3007PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf3007pbf-datasheets-1691.pdf | 75V | 80A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 2 | 14 Weeks | No SVHC | 12.6Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | GULL WING | Single | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 80ns | 49 ns | 55 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 280 mJ | 75V | N-Channel | 3270pF @ 25V | 4 V | 12.6m Ω @ 48A, 10V | 4V @ 250μA | 75A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMTH6004SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6004sps13-datasheets-1525.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 2.1W Ta 167W Tc | N-Channel | 4556pF @ 30V | 3.1m Ω @ 50A, 10V | 4V @ 250μA | 25A Ta 100A Tc | 95.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5305STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf5305strrpbf-datasheets-1721.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 110W Tc | 31A | 110A | 0.06Ohm | 280 mJ | P-Channel | 1200pF @ 25V | 60m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R5-100ESFQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn8r5100esfq-datasheets-1730.pdf | TO-220-3, Short Tab | 3 | 100V | 183W Ta | N-Channel | 3181pF @ 50V | 8.8m Ω @ 25A, 10V | 4V @ 1mA | 97A Ta | 44.5nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N70X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n70x2m-datasheets-1751.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | yes | 700V | 32W Tc | N-Channel | 800pF @ 10V | 550m Ω @ 500mA, 10V | 5V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM60N02-3M9P-E3 | Vishay Siliconix | $14.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum60n023m9pe3-datasheets-1747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 1.437803g | 3.9mOhm | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | Single | 30 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 7ns | 8 ns | 35 ns | 60A | 20V | SILICON | DRAIN | 3.75W Ta 120W Tc | N-Channel | 5950pF @ 10V | 3.9m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOT296L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aot296l-datasheets-9228.pdf | TO-220-3 | 18 Weeks | FET General Purpose Power | 70A | Single | 100V | 2.1W Ta 107W Tc | N-Channel | 2785pF @ 50V | 10m Ω @ 20A, 10V | 3.4V @ 250μA | 9.5A Ta 70A Tc | 52nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf640nstrlpbf-datasheets-9047.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 150W Tc | 18A | 72A | 0.15Ohm | 247 mJ | N-Channel | 1160pF @ 25V | 150m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOT16N50 | Alpha & Omega Semiconductor Inc. | $0.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | No | 278W | 1 | 16A | 30V | 500V | 278W Tc | N-Channel | 2297pF @ 25V | 370m Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0610N3-G-P013 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0610n3g-datasheets-9704.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 20 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 6 ns | 14ns | 16 ns | 16 ns | 500mA | 20V | SILICON | SWITCHING | 1W Tc | 0.5A | 2Ohm | 35 pF | 100V | N-Channel | 150pF @ 25V | 1.5 Ω @ 750mA, 10V | 2V @ 1mA | 500mA Tj | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ50S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 77ns | 195 ns | 50A | 10V | 60V | 90W Tc | P-Channel | 6290pF @ 10V | 13.8m Ω @ 25A, 10V | 3V @ 1mA | 50A Ta | 124nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0610N3-G-P003 | Microchip Technology | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0610n3g-datasheets-9704.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 20 Weeks | 453.59237mg | 3 | EAR99 | Tin | BOTTOM | 1 | Single | 1 | 6 ns | 14ns | 16 ns | 16 ns | 500mA | 20V | SILICON | SWITCHING | 1W Tc | 0.5A | 2Ohm | 100V | N-Channel | 150pF @ 25V | 1.5 Ω @ 750mA, 10V | 2V @ 1mA | 500mA Tj | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD033N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd033n06natma1-datasheets-1501.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 107W Tc | N-Channel | 3400pF @ 30V | 3.3m Ω @ 90A, 10V | 3.3V @ 50μA | 90A Tc | 44nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF16N50 | Alpha & Omega Semiconductor Inc. | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 16A | 500V | 50W Tc | N-Channel | 2297pF @ 25V | 370m Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH4006SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmnh4006sk313-datasheets-1476.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 90A | 40V | 2.2W Ta | N-Channel | 2280pF @ 25V | 6m Ω @ 86A, 10V | 4V @ 250μA | 18A Ta 90A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF610LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 11 Weeks | 6.000006g | 3 | yes | EAR99 | No | 1 | Single | 1 | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | SILICON | DRAIN | 200V | 200V | 3W Ta 36W Tc | TO-220AB | N-Channel | 140pF @ 25V | 1.5 Ω @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf9540nlpbf-datasheets-3671.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 110W Tc | 23A | 92A | 0.117Ohm | 84 mJ | P-Channel | 1450pF @ 25V | 117m Ω @ 14A, 10V | 4V @ 250μA | 23A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SKI03021 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski03021-datasheets-1370.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 85A | 30V | 135W Tc | N-Channel | 6200pF @ 15V | 2.4m Ω @ 110A, 10V | 2.5V @ 1.5mA | 85A Tc | 94.2nC @ 10V | 4.5V 10V | ±20V |
