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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPI80N04S404AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n04s404atma1-datasheets-9783.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 10 ns | 12ns | 9 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 71W Tc | 0.0046Ohm | 100 mJ | N-Channel | 3440pF @ 25V | 4.6m Ω @ 80A, 10V | 4V @ 35μA | 80A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CMS80N06D-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cms80n06dhf-datasheets-1546.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 60V | 2.5W Ta 83W Tc | N-Channel | 4871pF @ 30V | 7m Ω @ 20A, 10V | 4V @ 250μA | 14A Ta 80A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB1608L | Alpha & Omega Semiconductor Inc. | $1.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 140A | 60V | 2.1W Ta 333W Tc | N-Channel | 3690pF @ 25V | 7.3m Ω @ 20A, 10V | 3.7V @ 250μA | 11A Ta 140A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ60S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-XSSO-G2 | 96ns | 240 ns | 60A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 90W Tc | 120A | 0.0094Ohm | 146 mJ | P-Channel | 6510pF @ 10V | 6.3m Ω @ 30A, 10V | 3V @ 1mA | 60A Ta | 125nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||
| IXTY44N10T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 100V | 130W Tc | N-Channel | 1262pF @ 25V | 30m Ω @ 22A, 10V | 4.5V @ 25μA | 44A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH10H028SK3Q-13 | Diodes Incorporated | $1.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh10h028sk3q13-datasheets-1504.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 17 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2W Ta | 58A | 0.028Ohm | 43 mJ | N-Channel | 2245pF @ 50V | 28m Ω @ 20A, 10V | 4V @ 250μA | 55A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK42E12N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 16 Weeks | Single | 140W | 18ns | 22 ns | 64 ns | 88A | 20V | 140W Tc | 120V | N-Channel | 3100pF @ 60V | 9.4m Ω @ 21A, 10V | 4V @ 1mA | 88A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SKI06048 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski06048-datasheets-1371.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 85A | 60V | 135W Tc | N-Channel | 6210pF @ 25V | 4.7m Ω @ 55A, 10V | 2.5V @ 1.5mA | 85A Tc | 90.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0110N3-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0110n3g-datasheets-2467.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 2 ns | 3ns | 3 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 100V | 1W Tc | 0.35A | 3Ohm | 8 pF | N-Channel | 60pF @ 25V | 3 Ω @ 500mA, 10V | 2V @ 500μA | 350mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SKI10123 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski10123-datasheets-1369.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | NOT SPECIFIED | NOT SPECIFIED | 66A | 100V | 135W Tc | N-Channel | 6420pF @ 25V | 11.6m Ω @ 33A, 10V | 2.5V @ 1.5mA | 66A Tc | 88.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N0412N-S19-AY | Renesas Electronics America | $2.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-n0412ns19ay-datasheets-1402.pdf | TO-220-3 | 16 Weeks | EAR99 | No | 3 | 29 ns | 15ns | 13 ns | 64 ns | 100A | 20V | 40V | 1.5W Ta 119W Tc | N-Channel | 5550pF @ 25V | 3.7m Ω @ 50A, 10V | 100A Ta | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA00DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 104W Tc | N-Channel | 11700pF @ 15V | 1mOhm @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 220nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5C668NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-ntd5c668nlt4g-datasheets-1410.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | N-Channel | 8.9m Ω @ 25A, 10V | 2.1V @ 250μA | 15A Ta 48A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R9-100YSFX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | SC-100, SOT-669 | 12 Weeks | not_compliant | e3 | Tin (Sn) | 260 | 4 | 30 | 100V | 238W | 5.6mOhm | N-Channel | 100A | 50.3nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80P03P4L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb80p03p4l07atma1-datasheets-1412.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 8 ns | 4ns | 60 ns | 15 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 88W Tc | 0.0069Ohm | P-Channel | 5700pF @ 25V | 6.9m Ω @ 80A, 10V | 2V @ 130μA | 80A Tc | 80nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||
| AOW296 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 100V | 104W Tc | N-Channel | 2785pF @ 50V | 9.7m Ω @ 20A, 10V | 3.4V @ 250μA | 70A Tc | 52nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SKI04024 | Sanken | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski04024-datasheets-1349.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 85A | 40V | 135W Tc | N-Channel | 6200pF @ 25V | 3m Ω @ 82.5A, 10V | 2.5V @ 1.5mA | 85A Tc | 97.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR4292TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfu4292-datasheets-1261.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | 3 | EAR99 | Tin | No | 100W | 1 | FET General Purpose Power | 11 ns | 15ns | 8.4 ns | 16 ns | 9.3A | 20V | Single | 250V | 100W Tc | N-Channel | 705pF @ 25V | 345m Ω @ 5.6A, 10V | 5V @ 50μA | 9.3A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIPC10N60C3X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF296 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-262-3 Full Pack, I2Pak | 18 Weeks | 100V | 26W Tc | N-Channel | 2785pF @ 50V | 9.7m Ω @ 20A, 10V | 3.4V @ 250μA | 37A Tc | 52nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC08N80C3X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF840LCS-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 500V | 3.1W Ta 125W Tc | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C426NAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c426naft1g-datasheets-6596.pdf | 8-PowerTDFN, 5 Leads | 10 Weeks | 40V | 3.8W Ta 128W Tc | N-Channel | 4300pF @ 25V | 1.3m Ω @ 50A, 10V | 3.5V @ 250μA | 41A Ta 235A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK9P65W,RQ | Toshiba Semiconductor and Storage | $6.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 9.3A | 650V | 80W Tc | N-Channel | 700pF @ 300V | 560m Ω @ 4.6A, 10V | 3.5V @ 350μA | 9.3A Ta | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6218-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk621840c118-datasheets-1192.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 60W | 1 | 7.4 ns | 20.8ns | 20.1 ns | 30.6 ns | 42A | 20V | 40V | 60W Tc | 40V | N-Channel | 1170pF @ 25V | 16m Ω @ 10A, 10V | 2.8V @ 1mA | 42A Tc | 22nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R360CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r360cfd7atma1-datasheets-1363.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 650V | 43W Tc | N-Channel | 679pF @ 400V | 360m Ω @ 2.9A, 10V | 4.5V @ 140μA | 7A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C430NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c430nlt1g-datasheets-4952.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 110W Tc | N-Channel | 4300pF @ 20V | 1.5m Ω @ 50A, 10V | 2V @ 250μA | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7843PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr7843trpbf-datasheets-7587.pdf | 30V | 161A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | 25 ns | 42ns | 19 ns | 34 ns | 161A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 140W Tc | 620A | 1440 mJ | 30V | N-Channel | 4380pF @ 15V | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRLR3110ZTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | 2 | 10 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 140W Tc | TO-252AA | 250A | 100V | N-Channel | 3980pF @ 25V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| IRFR420ATRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfr420apbf-datasheets-7258.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | 83W | 1 | D-Pak | 340pF | 8.1 ns | 12ns | 13 ns | 16 ns | 3.3A | 30V | 500V | 83W Tc | 3Ohm | 500V | N-Channel | 340pF @ 25V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 3.3A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V |
