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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTMFS5C430NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c430nt1g-datasheets-7062.pdf | 8-PowerTDFN, 5 Leads | 5 | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 106W Tc | 185A | 900A | 0.0017Ohm | 338 mJ | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPI45N06S409AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi45n06s409aksa2-datasheets-1344.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 16 Weeks | 2.387001g | 3 | yes | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 15 ns | 40ns | 5 ns | 20 ns | 45A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | 71W Tc | 0.0094Ohm | 97 mJ | N-Channel | 3785pF @ 25V | 9.4m Ω @ 45A, 10V | 4V @ 34μA | 45A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD90N06S404ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipd90n06s404atma2-datasheets-1285.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | 3.949996g | yes | No | e3 | Tin (Sn) | SINGLE | GULL WING | 150W | 1 | R-PSSO-G2 | 30 ns | 70ns | 5 ns | 40 ns | 90A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | 360A | 0.0038Ohm | N-Channel | 10400pF @ 25V | 3.8m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 128nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SKI07074 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski07074-datasheets-1350.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | NOT SPECIFIED | NOT SPECIFIED | 85A | 75V | 135W Tc | N-Channel | 6340pF @ 25V | 6.6m Ω @ 44A, 10V | 2.5V @ 1.5mA | 85A Tc | 91nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN60R280P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | /files/infineontechnologies-ipan60r280p7sxksa1-datasheets-1292.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 24W Tc | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG3N60SCT | Diodes Incorporated | $0.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg3n60sct-datasheets-1294.pdf | TO-220-3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 600V | 104W Tc | N-Channel | 354pF @ 25V | 3.5 Ω @ 1.5A, 10V | 4V @ 250μA | 3.3A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5H630NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5h630nlt1g-datasheets-1296.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.1W Ta 89W Tc | N-Channel | 2540pF @ 30V | 3.1m Ω @ 20A, 10V | 2V @ 130μA | 22A Ta 120A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ018N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz018n04ls6atma1-datasheets-1297.pdf | 8-PowerTDFN | 18 Weeks | 40V | 2.5W Ta 83W Tc | N-Channel | 2700pF @ 20V | 1.8m Ω @ 20A, 10V | 2.3V @ 250μA | 27A Ta 40A Tc | 31nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW70R600CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipaw70r600cexksa1-datasheets-1299.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 86W Tc | TO-220AB | 18A | 0.6Ohm | 55 mJ | N-Channel | 474pF @ 100V | 600m Ω @ 1A, 10V | 3.5V @ 210μA | 10.5A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHU6N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihu6n65ege3-datasheets-1301.pdf | TO-251-3 Long Leads, IPak, TO-251AB | Lead Free | 3 | 18 Weeks | NOT SPECIFIED | Single | NOT SPECIFIED | 78W | 1 | R-PSIP-T3 | 12ns | 20 ns | 30 ns | 7A | 4V | SILICON | DRAIN | SWITCHING | 78W Tc | 7A | 0.6Ohm | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C430NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c430nlt1g-datasheets-4952.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 110W Tc | N-Channel | 4300pF @ 20V | 1.5m Ω @ 50A, 10V | 2V @ 250μA | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7843PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr7843trpbf-datasheets-7587.pdf | 30V | 161A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | 25 ns | 42ns | 19 ns | 34 ns | 161A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 140W Tc | 620A | 1440 mJ | 30V | N-Channel | 4380pF @ 15V | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRLR3110ZTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | 2 | 10 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 140W Tc | TO-252AA | 250A | 100V | N-Channel | 3980pF @ 25V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| AUIRFU4292 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfu4292-datasheets-1261.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 26 Weeks | 3 | EAR99 | No | 100W | 1 | FET General Purpose Power | 11 ns | 15ns | 8.4 ns | 16 ns | 9.3A | 20V | Single | 100W Tc | 250V | N-Channel | 705pF @ 25V | 345m Ω @ 5.6A, 10V | 5V @ 50μA | 9.3A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK661R8-30C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | /files/nexperiausainc-buk661r830c118-datasheets-1104.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 3 | Single | 263W | 1 | R-PSSO-G2 | 43 ns | 93ns | 142 ns | 272 ns | 120A | 16V | 30V | SILICON | DRAIN | SWITCHING | 263W Tc | 870 mJ | 30V | N-Channel | 10918pF @ 25V | 1.9m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 168nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| N0604N-S19-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-n0604ns19ay-datasheets-1273.pdf | TO-220-3 Isolated Tab | 16 Weeks | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Power | 82A | Single | 60V | 1.5W Ta 156W Tc | N-Channel | 4150pF @ 25V | 6.5m Ω @ 41A, 10V | 82A Ta | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6002LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmt6002lps13-datasheets-1275.pdf | 8-PowerTDFN | 18 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 2.3W | N-Channel | 6555pF @ 30V | 2m Ω @ 50A, 10V | 3V @ 250μA | 100A Tc | 130.8nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD12N20LTM-F085P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 200V | 2.5W Ta 55W Tc | N-Channel | 1080pF @ 25V | 280m Ω @ 4.5A, 10V | 2V @ 250μA | 9A Tc | 21nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF7S60 | Alpha & Omega Semiconductor Inc. | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 3 | No | 25W | 1 | 7A | 600V | 25W Tc | N-Channel | 372pF @ 100V | 600m Ω @ 3.5A, 10V | 3.9V @ 250μA | 7A Tc | 8.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R280P7SE8228XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 600V | 24W Tc | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR024TRLPBF | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 14 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| AOW14N50 | Alpha & Omega Semiconductor Inc. | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | FET General Purpose Power | 14A | Single | 500V | 278W Tc | N-Channel | 2297pF @ 25V | 380m Ω @ 7A, 10V | 4.5V @ 250μA | 14A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC096N10LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc096n10ls5atma1-datasheets-1210.pdf | 8-PowerTDFN | 5 | 13 Weeks | compliant | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3W Ta 83W Tc | 72A | 287A | 0.0096Ohm | 45 mJ | N-Channel | 2100pF @ 50V | 9.6m Ω @ 20A, 10V | 2.3V @ 36μA | 40A Tc | 14.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF3N100 | Alpha & Omega Semiconductor Inc. | $6.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | TO-220-3F | 830pF | 2.8A | 1000V | 38W Tc | N-Channel | 830pF @ 25V | 6Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.8A Tc | 20nC @ 10V | 6 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW12N65 | Alpha & Omega Semiconductor Inc. | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 12A | 650V | 278W Tc | N-Channel | 2150pF @ 25V | 720m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB2606L | Alpha & Omega Semiconductor Inc. | $6.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 115W | 1 | 72A | 20V | 60V | 2.1W Ta 115W Tc | N-Channel | 4050pF @ 30V | 6.2m Ω @ 20A, 10V | 3.5V @ 250μA | 13A Ta 72A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD6824NLT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvd6824nlt4gvf01-datasheets-1211.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 100V | 3.9W Ta 90W Tc | N-Channel | 3.468nF @ 25V | 20m Ω @ 20A, 10V | 2.5V @ 250μA | 8.5A Ta 41A Tc | 66nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0500NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz0500nsiatma1-datasheets-1236.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 40A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | 30A | 160A | 0.0019Ohm | 90 mJ | N-Channel | 3400pF @ 15V | 1.5m Ω @ 20A, 10V | 2V @ 250μA | 30A Ta 40A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHB8N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb8n50dge3-datasheets-1242.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | yes | No | SINGLE | GULL WING | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 156W Tc | 18A | 0.85Ohm | 29 mJ | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| AUIRFR4105ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr4105ztrl-datasheets-1245.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 40ns | 24 ns | 26 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 48W Tc | TO-252AA | 0.0245Ohm | 29 mJ | 55V | N-Channel | 740pF @ 25V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±20V |
