Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMFS5C442NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c442nt1g-datasheets-9431.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 2100pF @ 25V | 2.3m Ω @ 50A, 10V | 4V @ 250μA | 29A Ta 140A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6714MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf6714mtrpbf-datasheets-0724.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 2.1MOhm | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 18 ns | 26ns | 9.6 ns | 13 ns | 29mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 29A | 234A | 25V | N-Channel | 3890pF @ 13V | 2.1m Ω @ 29A, 10V | 2.4V @ 100μA | 29A Ta 166A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHFL110TR-GE3 | Vishay Siliconix | $1.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl110trpbf-datasheets-6072.pdf | TO-261-4, TO-261AA | 8 Weeks | SOT-223 | 6.9 ns | 16ns | 9.4 ns | 15 ns | 1.5A | 20V | 100V | 2W Ta 3.1W Tc | N-Channel | 180pF @ 25V | 540mOhm @ 900mA, 10V | 4V @ 250μA | 1.5A Tc | 8.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB530N15N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd530n15n3gatma1-datasheets-3316.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 68W | 1 | Not Qualified | R-PSSO-G2 | 9 ns | 3 ns | 13 ns | 21A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | 84A | 0.053Ohm | 60 mJ | N-Channel | 887pF @ 75V | 53m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMTH4004SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4004sk313-datasheets-0640.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 3.9W Ta 180W Tc | N-Channel | 4305pF @ 25V | 3.2m Ω @ 90A, 10V | 4V @ 250μA | 100A Tc | 68.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFU8401 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfu8401-datasheets-0743.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 26 Weeks | No SVHC | 3 | EAR99 | No | 1 | Single | 79W | FET General Purpose Power | 7.9 ns | 34ns | 24 ns | 25 ns | 100A | 20V | 40V | 79W Tc | N-Channel | 2200pF @ 25V | 4.25m Ω @ 60A, 10V | 3.9V @ 500μA | 100A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FCPF600N60Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-fcp600n60z-datasheets-4556.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 12 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 28W | 1 | FET General Purpose Power | 13 ns | 7ns | 9 ns | 39 ns | 7.4A | 20V | 600V | 89W Tc | 650V | N-Channel | 1120pF @ 25V | 600m Ω @ 3.7A, 10V | 3.5V @ 250μA | 7.4A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQPF2N80YDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqpf2n80ydtu-datasheets-0758.pdf | TO-220-3 Full Pack, Formed Leads | 10.36mm | 16.07mm | 4.9mm | 4 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 21 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 12 ns | 30ns | 28 ns | 25 ns | 1.5A | 30V | 35W Tc | 800V | N-Channel | 550pF @ 25V | 6.3 Ω @ 750mA, 10V | 5V @ 250μA | 1.5A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| AOT11N70 | Alpha & Omega Semiconductor Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 | 18 Weeks | 11A | 700V | 271W Tc | N-Channel | 2150pF @ 25V | 870m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT254L | Alpha & Omega Semiconductor Inc. | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 32A | 150V | 2.1W Ta 125W Tc | N-Channel | 2150pF @ 75V | 46m Ω @ 20A, 10V | 2.7V @ 250μA | 4.2A Ta 32A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF11N70 | Alpha & Omega Semiconductor Inc. | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 11A | 700V | 50W Tc | N-Channel | 2150pF @ 25V | 870m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C426NWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c426naft1g-datasheets-6596.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | ACTIVE (Last Updated: 6 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 128W Tc | N-Channel | 4300pF @ 25V | 1.3m Ω @ 50A, 10V | 3.5V @ 250μA | 41A Ta 235A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK03M2DPA-00#J5A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk03m2dpa00j5a-datasheets-0628.pdf | 8-WFDFN Exposed Pad | Lead Free | 16 Weeks | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 45A | 30V | 40W Tc | N-Channel | 3850pF @ 10V | 2.8m Ω @ 22.5A, 10V | 45A Ta | 21.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU80R600P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu80r600p7akma1-datasheets-0630.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 60W Tc | 22A | 0.6Ohm | 20 mJ | N-Channel | 570pF @ 500V | 600m Ω @ 3.4A, 10V | 3.5V @ 170μA | 8A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVD6820NLT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd6820nlt4gvf01-datasheets-8993.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5 Weeks | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | 90V | 4W Ta 100W Tc | N-Channel | 4209pF @ 25V | 16.7m Ω @ 20A, 10V | 2.5V @ 250μA | 10A Ta 50A Tc | 83nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF10N50UT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf10n50ut-datasheets-0634.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 6 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 42W | 1 | FET General Purpose Power | 15 ns | 38ns | 33 ns | 46 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 8A | 500V | N-Channel | 1130pF @ 25V | 1.05 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| NTTFS4H07NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nttfs4h07ntwg-datasheets-9943.pdf | 8-PowerWDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 5 ns | 28.3ns | 1.65 ns | 14.5 ns | 66A | 20V | Single | 2.64W Ta 33.8W Tc | 25V | N-Channel | 771pF @ 12V | 4.8m Ω @ 30A, 10V | 2.1V @ 250μA | 18.5A Ta 66A Tc | 12.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7483MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf7483mtrpbf-datasheets-0563.pdf | DirectFET™ Isometric MF | Lead Free | 12 Weeks | 2.3mOhm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 135A | 40V | 74W Tc | N-Channel | 3913pF @ 25V | 2.3m Ω @ 81A, 10V | 3.9V @ 100μA | 135A Tc | 81nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT13N50 | Alpha & Omega Semiconductor Inc. | $4.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 250W | 1 | FET General Purpose Power | 13A | 30V | Single | 500V | 250W Tc | N-Channel | 1633pF @ 25V | 510m Ω @ 6.5A, 10V | 4.5V @ 250μA | 13A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF19N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf19n20-datasheets-0652.pdf | 200V | 19.4A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 50W | 1 | FET General Purpose Power | 20 ns | 190ns | 80 ns | 55 ns | 11.8A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 50W Tc | TO-220AB | 48A | 250 mJ | 200V | N-Channel | 1600pF @ 25V | 150m Ω @ 5.9A, 10V | 5V @ 250μA | 11.8A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IRFU7540PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfr7540trpbf-datasheets-9329.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 12 Weeks | 4Ohm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 90A | 60V | 140W Tc | N-Channel | 4360pF @ 25V | 4.8m Ω @ 66A, 10V | 3.7V @ 100μA | 90A Tc | 130nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF7S65 | Alpha & Omega Semiconductor Inc. | $5.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 35W | 1 | FET General Purpose Power | 7A | 30V | Single | 650V | 35W Tc | 7A | N-Channel | 434pF @ 100V | 650m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF7N50U-G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFRFET™, Unifet™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdpf7n50ug-datasheets-0665.pdf | TO-220-3 Full Pack | 5 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 1 | Single | 31.3W | FET General Purpose Power | 6 ns | 55ns | 35 ns | 25 ns | 5A | 30V | 500V | 31.3W Tc | 5A | N-Channel | 940pF @ 25V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF288L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 43A | 80V | 2.1W Ta 35.5W Tc | N-Channel | 1871pF @ 40V | 9.2m Ω @ 20A, 10V | 3.4V @ 250μA | 10.5A Ta 43A Tc | 38nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU4510PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfr4510trpbf-datasheets-8155.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 143W | 1 | FET General Purpose Power | 18 ns | 34 ns | 42 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 143W Tc | 252A | 100V | N-Channel | 3031pF @ 50V | 3 V | 13.9m Ω @ 38A, 10V | 4V @ 100μA | 56A Tc | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| CSD18537NKCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Copper, Tin | e3 | Matte Tin (Sn) | NOT SPECIFIED | CSD18537 | Single | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | 4.5 ns | 3.2ns | 3.9 ns | 12.6 ns | 54A | 20V | SILICON | DRAIN | SWITCHING | 94W Tc | 5.2 pF | 55 mJ | 60V | N-Channel | 1480pF @ 30V | 3 V | 14m Ω @ 25A, 10V | 3.5V @ 250μA | 50A Tc | 18nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| FCD260N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-fcd260n65s3-datasheets-0682.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 90W Tc | N-Channel | 1010pF @ 400V | 260m Ω @ 6A, 10V | 4.5V @ 1.2mA | 12A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF13N50 | Alpha & Omega Semiconductor Inc. | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 13A | Single | 500V | 50W Tc | N-Channel | 1633pF @ 25V | 510m Ω @ 6.5A, 10V | 4.5V @ 250μA | 13A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6011LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | not_compliant | 55V | 1.6W Ta | N-Channel | 3077pF @ 30V | 12m Ω @ 25A, 10V | 2V @ 250μA | 80A Tc | 49.1nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R9-100YSFQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | ROHS3 Compliant | 12 Weeks |
