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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHD6N65ET4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650V | 78W Tc | N-Channel | 820pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR024NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfr024n-datasheets-0700.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 4.9 ns | 34ns | 27 ns | 19 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45W Tc | TO-252AA | 68A | 0.075Ohm | 71 mJ | 55V | N-Channel | 370pF @ 25V | 75m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | ||||||||||||||||||||||||||||||||||||
| IPA60R750E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r750e6xksa1-datasheets-1040.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 27W | 1 | Not Qualified | 9 ns | 7ns | 12 ns | 50 ns | 5.7A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 27W Tc | TO-220AB | 0.75Ohm | 72 mJ | N-Channel | 373pF @ 100V | 750m Ω @ 2A, 10V | 3.5V @ 170μA | 5.7A Tc | 17.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHD6N65ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650V | 78W Tc | N-Channel | 820pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3636TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3636trpbf-datasheets-8735.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 143W | 1 | R-PSSO-G2 | 216ns | 69 ns | 50A | SILICON | DRAIN | SWITCHING | 143W Tc | TO-252AA | 396A | 0.0083Ohm | 170 mJ | 60V | N-Channel | 3779pF @ 50V | 6.8m Ω @ 50A, 10V | 2.5V @ 100μA | 50A Tc | 49nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| SIHF9630S-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr9014ge3-datasheets-5746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 200V | 3W Ta 74W Tc | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTFS010N10MCL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 20 Weeks | not_compliant | e3 | Tin (Sn) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD6N65ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650V | 78W Tc | N-Channel | 820pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2410L-G-P014 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn2410lg-datasheets-8431.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 8 ns | 8ns | 24 ns | 23 ns | 190mA | 20V | SILICON | SWITCHING | 1W Tc | 20 pF | 240V | N-Channel | 125pF @ 25V | 10 Ω @ 500mA, 10V | 2V @ 1mA | 190mA Tj | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB45P03P4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb45p03p4l11atma1-datasheets-1009.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 58W | 1 | R-PSSO-G2 | 7 ns | 3ns | 14 ns | 45 ns | -45A | 5V | -30V | SILICON | DRAIN | 30V | 58W Tc | 180A | 0.0111Ohm | 110 mJ | -30V | P-Channel | 3770pF @ 25V | 10.8m Ω @ 45A, 10V | 2V @ 85μA | 45A Tc | 55nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||
| ZXMN15A27KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmn15a27ktc-datasheets-1016.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 3.949996g | No SVHC | 3 | no | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 4.2W | 1 | FET General Purpose Power | R-PSSO-G2 | 3.3 ns | 12.7ns | 13.3 ns | 17.1 ns | 1.7A | 25V | SILICON | DRAIN | SWITCHING | 2.2W Ta | TO-252AA | 2.55A | 0.65Ohm | 55 mJ | 150V | N-Channel | 169pF @ 25V | 650m Ω @ 2.15A, 10V | 4V @ 250μA | 1.7A Ta | 6.6nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||
| DMP4011SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4011spsq13-datasheets-1019.pdf | 8-PowerTDFN | 18 Weeks | not_compliant | e3 | Matte Tin (Sn) | 40V | 1.3W Ta | P-Channel | 2747pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 11.7A Ta 76A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW12N60 | Alpha & Omega Semiconductor Inc. | $6.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 12A | 600V | 278W Tc | N-Channel | 2100pF @ 25V | 550m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y1R6-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0104N3-G-P014 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0104n3g-datasheets-9385.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 3 ns | 7ns | 5 ns | 6 ns | 450mA | 20V | SILICON | SWITCHING | 1W Tc | 0.45A | 40V | N-Channel | 70pF @ 20V | 1.8 Ω @ 1A, 10V | 1.6V @ 500μA | 450mA Ta | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRL7732S2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirl7732s2tr-datasheets-0958.pdf | DirectFET™ Isometric SC | 3 | 16 Weeks | No SVHC | 7 | EAR99 | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | BOTTOM | 2.2W | 1 | FET General Purpose Power | R-XBCC-N3 | 21 ns | 123ns | 37 ns | 22 ns | 14A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.2W Ta 41W Tc | 58A | 230A | 0.0066Ohm | 40V | N-Channel | 2020pF @ 25V | 6.6m Ω @ 35A, 10V | 2.5V @ 50μA | 14A Ta | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IPB80N06S405ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb80n06s405atma2-datasheets-0964.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | 2 | 16 Weeks | 1.946308g | 3 | yes | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 107W | 1 | R-PSSO-G2 | 20 ns | 5ns | 8 ns | 35 ns | 80A | 20V | 60V | SILICON | DRAIN | 107W Tc | 0.0057Ohm | 60V | N-Channel | 6500pF @ 25V | 5.7m Ω @ 80A, 10V | 4V @ 60μA | 80A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSF134N10NJ3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsf134n10nj3gxuma1-datasheets-0944.pdf | 3-WDSON | Lead Free | 2 | 26 Weeks | No SVHC | 7 | yes | EAR99 | Silver | e4 | Halogen Free | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | NOT SPECIFIED | 2.2W | 1 | R-MBCC-N2 | 6ns | 9A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.7V | 2.2W Ta 43W Tc | 9A | N-Channel | 2300pF @ 50V | 13.4m Ω @ 30A, 10V | 3.5V @ 40μA | 9A Ta 40A Tc | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHF9540S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 150W Tc | P-Channel | 1400pF @ 25V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N12S3L15ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50n12s3l15atma1-datasheets-0979.pdf | 2 | 14 Weeks | yes | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 50A | 200A | 0.02Ohm | 330 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf540nstrlpbf-datasheets-8721.pdf&product=infineontechnologies-irf540nstrrpbf-6852682 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 130W Tc | 33A | 110A | 0.044Ohm | 185 mJ | N-Channel | 1960pF @ 25V | 44m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| EKI07076 | Sanken | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-eki07076-datasheets-0898.pdf | TO-220-3 | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 85A | 75V | 135W Tc | N-Channel | 6340pF @ 25V | 6.6m Ω @ 44A, 10V | 2.5V @ 1.5mA | 85A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2410L-G-P013 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn2410lg-datasheets-8431.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 8 ns | 8ns | 24 ns | 23 ns | 190mA | 20V | SILICON | SWITCHING | 240V | 240V | 1W Tc | 20 pF | N-Channel | 125pF @ 25V | 10 Ω @ 500mA, 10V | 2V @ 1mA | 190mA Tj | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FKI06051 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-fki06051-datasheets-0905.pdf | TO-220-3 Full Pack | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 69A | 60V | 42W Tc | N-Channel | 6210pF @ 25V | 4.7m Ω @ 55A, 10V | 2.5V @ 1.5mA | 69A Tc | 90.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP45H4D9HJ3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp45h4d9hj3-datasheets-0906.pdf | TO-251-3, IPak, Short Leads | 3 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 450V | 450V | 104W Tc | 4.6A | 22.4A | 187 mJ | P-Channel | 547pF @ 25V | 4.9 Ω @ 1.05A, 10V | 5V @ 250μA | 4.6A Tc | 13.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF600N60ZL1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-fcpf600n60zl1-datasheets-0917.pdf | TO-220-3 Full Pack | 12 Weeks | ACTIVE (Last Updated: 3 weeks ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 28W Tc | N-Channel | 1120pF @ 25V | 600m Ω @ 3.7A, 10V | 3.5V @ 250μA | 7.4A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF12N65 | Alpha & Omega Semiconductor Inc. | $10.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 2.15nF | 12A | 650V | 28W Tc | N-Channel | 2150pF @ 25V | 720mOhm @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 48nC @ 10V | 720 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0104N3-G-P003 | Microchip Technology | $1.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0104n3g-datasheets-9385.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 9 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 3 ns | 7ns | 5 ns | 6 ns | 450mA | 20V | SILICON | SWITCHING | 40V | 40V | 1W Tc | 0.45A | N-Channel | 70pF @ 20V | 1.8 Ω @ 1A, 10V | 1.6V @ 500μA | 450mA Ta | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOT288L | Alpha & Omega Semiconductor Inc. | $6.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 46A | 80V | 2.1W Ta 93.5W Tc | N-Channel | 1871pF @ 40V | 9.2m Ω @ 20A, 10V | 3.4V @ 250μA | 10.5A Ta 46A Tc | 38nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF7S65 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 434pF | 7A | 650V | 25W Tc | N-Channel | 434pF @ 100V | 650mOhm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 650 mΩ | 10V | ±30V |
