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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AOWF12N65 | Alpha & Omega Semiconductor Inc. | $10.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 2.15nF | 12A | 650V | 28W Tc | N-Channel | 2150pF @ 25V | 720mOhm @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 48nC @ 10V | 720 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0104N3-G-P003 | Microchip Technology | $1.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tn0104n3g-datasheets-9385.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 9 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 3 ns | 7ns | 5 ns | 6 ns | 450mA | 20V | SILICON | SWITCHING | 40V | 40V | 1W Tc | 0.45A | N-Channel | 70pF @ 20V | 1.8 Ω @ 1A, 10V | 1.6V @ 500μA | 450mA Ta | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AOT288L | Alpha & Omega Semiconductor Inc. | $6.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 46A | 80V | 2.1W Ta 93.5W Tc | N-Channel | 1871pF @ 40V | 9.2m Ω @ 20A, 10V | 3.4V @ 250μA | 10.5A Ta 46A Tc | 38nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF7S65 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 434pF | 7A | 650V | 25W Tc | N-Channel | 434pF @ 100V | 650mOhm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 9.2nC @ 10V | 650 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF7S60L | Alpha & Omega Semiconductor Inc. | $5.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 7A | Single | 600V | 34W Tc | 7A | N-Channel | 372pF @ 100V | 600m Ω @ 3.5A, 10V | 3.9V @ 250μA | 7A Tc | 8.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C50NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 17 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FKI07076 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-fki07076-datasheets-0869.pdf | TO-220-3 Full Pack | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 55A | 75V | 42W Tc | N-Channel | 6340pF @ 25V | 6.9m Ω @ 44A, 10V | 2.5V @ 1.5mA | 55A Tc | 91.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR224TRLPBF | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 2.5W Ta 42W Tc | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPAW70R950CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipaw70r950cexksa1-datasheets-0805.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 68W Tc | TO-220AB | 12A | 0.95Ohm | 50 mJ | N-Channel | 328pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 150μA | 7.4A Tc | 15.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R180P7SE8228AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 600V | 72W Tc | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR9310TR-GE3 | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 400V | 50W Tc | P-Channel | 270pF @ 25V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD14AN06LA0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd14an06la0f085-datasheets-0420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 29 Weeks | 260.37mg | 11.6MOhm | 3 | ACTIVE (Last Updated: 17 hours ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 132ns | 27 ns | 27 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 125W Tc | TO-252AA | 9.5A | 55 mJ | 60V | N-Channel | 2810pF @ 25V | 11.6m Ω @ 50A, 10V | 3V @ 250μA | 9.5A Ta 50A Tc | 32nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AOTF14N50 | Alpha & Omega Semiconductor Inc. | $14.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 50W | 1 | FET General Purpose Power | 14A | 30V | Single | 500V | 50W Tc | N-Channel | 2297pF @ 25V | 380m Ω @ 7A, 10V | 4.5V @ 250μA | 14A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7463TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7463trpbf-datasheets-0820.pdf | 30V | 14A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 8MOhm | 8 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | 16 ns | 16ns | 6.5 ns | 28 ns | 14A | 12V | SILICON | SWITCHING | 2V | 2.5W Ta | 320 mJ | 30V | N-Channel | 3150pF @ 15V | 2 V | 8m Ω @ 14A, 10V | 2V @ 250μA | 14A Ta | 51nC @ 4.5V | 2.7V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| IPI70N04S406AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp70n04s406aksa1-datasheets-4331.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 16 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 58W Tc | 70A | 280A | 0.0065Ohm | 72 mJ | N-Channel | 2550pF @ 25V | 6.5m Ω @ 70A, 10V | 4V @ 26μA | 70A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOT7S60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Power | 7A | Single | 600V | 104W Tc | 7A | N-Channel | 372pF @ 100V | 600m Ω @ 3.5A, 10V | 3.9V @ 250μA | 7A Tc | 8.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34SPBF | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34strlpbf-datasheets-9466.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | No | D2PAK (TO-263) | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 3.7W Ta 88W Tc | N-Channel | 1200pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EKI10126 | Sanken | $2.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-eki10126-datasheets-0845.pdf | TO-220-3 | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 66A | 100V | 135W Tc | N-Channel | 6420pF @ 25V | 11.6m Ω @ 33A, 10V | 2.5V @ 1.5mA | 66A Tc | 88.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPU04N60C3BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd04n60c3atma1-datasheets-6934.pdf | 650V | 4.5A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8 Weeks | No SVHC | 3 | no | AVALANCHE RATED | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | 6 ns | 2.5ns | 9.5 ns | 58.5 ns | 4.5A | 20V | SILICON | SWITCHING | 3V | 50W Tc | 0.95Ohm | 600V | N-Channel | 490pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB80P04P4L08ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb80p04p4l08atma1-datasheets-0846.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Contains Lead | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 75W | 12 ns | 11ns | 35 ns | 42 ns | -80A | 16V | -40V | 40V | 75W Tc | -40V | P-Channel | 5430pF @ 25V | 7.9m Ω @ 80A, 10V | 2.2V @ 120μA | 80A Tc | 92nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| NVMJS1D7N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmjs1d7n04ctwg-datasheets-0789.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 130μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c430naft1g-datasheets-1229.pdf | 8-PowerTDFN, 5 Leads | 15 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF540S-GE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | 3.7W | 1 | D2PAK (TO-263) | 28A | 20V | 100V | 3.7W Ta 150W Tc | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLR3410TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirlr3410trl-datasheets-4649.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | 2 | 16 Weeks | 105MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 79W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | TO-252AA | 60A | 100V | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRFSL7440PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7440trlpbf-datasheets-4846.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 12 Weeks | No SVHC | 2.5MOhm | 3 | EAR99 | No | SINGLE | 208W | 1 | FET General Purpose Power | 24 ns | 68ns | 68 ns | 115 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 208W Tc | 208A | 772A | 40V | N-Channel | 4730pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTMFS5C442NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c442nt1g-datasheets-9431.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 2100pF @ 25V | 2.3m Ω @ 50A, 10V | 4V @ 250μA | 29A Ta 140A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6714MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf6714mtrpbf-datasheets-0724.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 2.1MOhm | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 18 ns | 26ns | 9.6 ns | 13 ns | 29mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 29A | 234A | 25V | N-Channel | 3890pF @ 13V | 2.1m Ω @ 29A, 10V | 2.4V @ 100μA | 29A Ta 166A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHFL110TR-GE3 | Vishay Siliconix | $1.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl110trpbf-datasheets-6072.pdf | TO-261-4, TO-261AA | 8 Weeks | SOT-223 | 6.9 ns | 16ns | 9.4 ns | 15 ns | 1.5A | 20V | 100V | 2W Ta 3.1W Tc | N-Channel | 180pF @ 25V | 540mOhm @ 900mA, 10V | 4V @ 250μA | 1.5A Tc | 8.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB530N15N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd530n15n3gatma1-datasheets-3316.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 68W | 1 | Not Qualified | R-PSSO-G2 | 9 ns | 3 ns | 13 ns | 21A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | 84A | 0.053Ohm | 60 mJ | N-Channel | 887pF @ 75V | 53m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMTH4004SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4004sk313-datasheets-0640.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 3.9W Ta 180W Tc | N-Channel | 4305pF @ 25V | 3.2m Ω @ 90A, 10V | 4V @ 250μA | 100A Tc | 68.6nC @ 10V | 10V | ±20V |
