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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Wire Gauge (Max) | Wire Gauge (Min) | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB80N04S306ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipb80n04s306atma1-datasheets-1223.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 15 ns | 10ns | 20 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 0.0054Ohm | 125 mJ | N-Channel | 3250pF @ 25V | 5.4m Ω @ 80A, 10V | 4V @ 52μA | 80A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| ZVN0545ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn0545a-datasheets-3730.pdf | 450V | 90mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | 7 ns | 7ns | 7 ns | 16 ns | 90mA | 20V | SILICON | SWITCHING | 700mW Ta | 0.09A | 450V | N-Channel | 70pF @ 25V | 50 Ω @ 100mA, 10V | 3V @ 1mA | 90mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF3315STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | 150V | 21A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 14 Weeks | 82mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 94W | 1 | R-PSSO-G2 | 9.6 ns | 32ns | 38 ns | 49 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 94W Tc | 84A | 150V | N-Channel | 1300pF @ 25V | 82m Ω @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMTH8003SPS-13 | Diodes Incorporated | $1.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 18 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 2.9W | N-Channel | 8952pF @ 40V | 3.9m Ω @ 30A, 10V | 4V @ 250μA | 100A Tc | 124.3nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N04S3H4ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd90n04s3h4atma1-datasheets-1183.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 20 ns | 13ns | 10 ns | 30 ns | 90A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 115W Tc | N-Channel | 3900pF @ 25V | 4.3m Ω @ 90A, 10V | 4V @ 65μA | 90A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK65S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 88W | 1 | 11ns | 16 ns | 65A | 20V | 40V | 88W Tc | N-Channel | 2800pF @ 10V | 4.5m Ω @ 32.5A, 10V | 3V @ 1mA | 65A Ta | 63nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF14N50 | Alpha & Omega Semiconductor Inc. | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | FET General Purpose Power | 14A | Single | 500V | 28W Tc | N-Channel | 2297pF @ 25V | 380m Ω @ 7A, 10V | 4.5V @ 250μA | 14A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF12N65 | Alpha & Omega Semiconductor Inc. | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | Contains Lead | 18 Weeks | 3 | NOT SPECIFIED | NOT SPECIFIED | 50W | 1 | 12A | 30V | 650V | 50W Tc | N-Channel | 2150pF @ 25V | 720m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5C464NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd5c464nt4g-datasheets-1141.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 4W Ta 40W Tc | N-Channel | 1200pF @ 20V | 5.8m Ω @ 30A, 10V | 4V @ 250μA | 19A Ta 59A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT12N60FDL | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 18 Weeks | NO | FET General Purpose Powers | Single | 600V | 278W Tc | 12A | N-Channel | 2010pF @ 25V | 650m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C628NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c628nlwfaft3g-datasheets-0372.pdf | 8-PowerTDFN, 5 Leads | 5 | 4 Weeks | ACTIVE (Last Updated: 16 hours ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.7W Ta 110W Tc | 900A | 0.0033Ohm | 565 mJ | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 28A Ta 150A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK963R1-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk963r140e118-datasheets-1147.pdf | 39.878mm | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19.05mm | Black | Plastic | 2 | 12 Weeks | 3.949996g | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 234W | 1 | R-PSSO-G2 | 42 ns | 73ns | 76 ns | 114 ns | 100A | 10V | 40V | DRAIN | SWITCHING | 18 AWG | 14 AWG | 234W Tc | 794A | 40V | N-Channel | 9150pF @ 25V | 2.7m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 69.5nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| DMTH4004SK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4004sk3q13-datasheets-1149.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.9W Ta 180W Tc | 160A | 0.0032Ohm | 160 mJ | N-Channel | 4305pF @ 25V | 3.2m Ω @ 90A, 10V | 4V @ 250μA | 100A Tc | 68.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 500V | 500V | 2.5W Ta 42W Tc | 8A | 3Ohm | 400 mJ | N-Channel | 360pF @ 25V | 3 Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK4A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 24 Weeks | 3 | No | TO-220SIS | 380pF | 15ns | 7 ns | 4A | 30V | 500V | 30W Tc | N-Channel | 380pF @ 25V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 9nC @ 10V | 2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF33N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf33n10-datasheets-1160.pdf | 100V | 18A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 41W | 1 | FET General Purpose Power | 15 ns | 195ns | 110 ns | 80 ns | 18A | 25V | SILICON | ISOLATED | SWITCHING | 41W Tc | 72A | 0.052Ohm | 100V | N-Channel | 1500pF @ 25V | 52m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 51nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHP8N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp8n50dge3-datasheets-2874.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | FET General Purpose Powers | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 5V | SILICON | SWITCHING | 156W Tc | TO-220AB | 0.85Ohm | 29 mJ | 500V | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY02N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1200V | 33W Tc | N-Channel | 104pF @ 25V | 75 Ω @ 100mA, 10V | 4V @ 100μA | 200mA Tc | 4.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17555Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17555 | 3W | 1 | FET General Purpose Power | 14 ns | 18ns | 5.3 ns | 20 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 24A | 0.0034Ohm | N-Channel | 4650pF @ 15V | 2.7m Ω @ 25A, 10V | 1.9V @ 250μA | 24A Ta 100A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTMYS3D3N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | LFPAK4 (5x6) | 60V | 3.9W Ta 100W Tc | N-Channel | 2880pF @ 25V | 3m Ω @ 50A, 10V | 2V @ 250μA | 26A Ta 133A Tc | 40.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C628NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c628nlwfaft3g-datasheets-0372.pdf | 8-PowerTDFN, 5 Leads | 5 | 6 Weeks | ACTIVE (Last Updated: 15 hours ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.7W Ta 110W Tc | 900A | 0.0033Ohm | 565 mJ | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 28A Ta 150A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB35N12S3L26ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipb35n12s3l26atma1-datasheets-1020.pdf | 2 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 35A | 140A | 0.0322Ohm | 175 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB256L | Alpha & Omega Semiconductor Inc. | $4.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 19A | 150V | 2.1W Ta 83W Tc | N-Channel | 1165pF @ 75V | 85m Ω @ 10A, 10V | 2.8V @ 250μA | 3A Ta 19A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N600CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n600chc5g-datasheets-0498.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 600V | 83W Tc | N-Channel | 743pF @ 100V | 600mOhm @ 4A, 10V | 4V @ 250μA | 8A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD6N65ET4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650V | 78W Tc | N-Channel | 820pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR024NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfr024n-datasheets-0700.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 4.9 ns | 34ns | 27 ns | 19 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45W Tc | TO-252AA | 68A | 0.075Ohm | 71 mJ | 55V | N-Channel | 370pF @ 25V | 75m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IPA60R750E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r750e6xksa1-datasheets-1040.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 27W | 1 | Not Qualified | 9 ns | 7ns | 12 ns | 50 ns | 5.7A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 27W Tc | TO-220AB | 0.75Ohm | 72 mJ | N-Channel | 373pF @ 100V | 750m Ω @ 2A, 10V | 3.5V @ 170μA | 5.7A Tc | 17.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR4104TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4104trpbf-datasheets-7029.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 140W Tc | TO-252AA | 42A | 480A | 0.0055Ohm | 145 mJ | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L05ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd90n06s4l05atma2-datasheets-1056.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 3.949996g | 3 | yes | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 14 ns | 4ns | 13 ns | 80 ns | 90A | 16V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 107W Tc | 0.0046Ohm | N-Channel | 8180pF @ 25V | 4.6m Ω @ 90A, 10V | 2.2V @ 60μA | 90A Tc | 110nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF12N50UT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf12n50ut-datasheets-1061.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 42W | 1 | FET General Purpose Power | 35 ns | 45ns | 35 ns | 60 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 42W Tc | TO-220AB | 40A | 0.8Ohm | 456 mJ | 500V | N-Channel | 1395pF @ 25V | 800m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V |
