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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFS7534PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfr15n20dpbf-datasheets-2647.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 294W Tc | N-Channel | 10.034pF @ 25V | 2.4mOhm @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 279nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB70N04S406ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp70n04s406aksa1-datasheets-4331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 8 ns | 10ns | 9 ns | 7 ns | 70A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 58W Tc | 280A | 0.0062Ohm | 72 mJ | N-Channel | 2550pF @ 25V | 6.2m Ω @ 70A, 10V | 4V @ 26μA | 70A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfz44zpbf-datasheets-9533.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 13.9MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 200A | 86 mJ | 55V | N-Channel | 1420pF @ 25V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NP70N04MUG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np2600samct3g-datasheets-4347.pdf | TO-220-3 | TO-220 | 40V | 1.8W Ta 115W Tc | N-Channel | 4.9pF @ 25V | 5mOhm @ 35A, 10V | 4V @ 250μA | 70A Tc | 90nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EZSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf1010ezpbf-datasheets-1778.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | 8.5MOhm | 3 | yes | No | Single | 140W | 1 | 19 ns | 90ns | 54 ns | 38 ns | 75A | 20V | 140W Tc | 60V | N-Channel | 2810pF @ 25V | 8.5m Ω @ 51A, 10V | 4V @ 100μA | 75A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R380CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd50r380ceauma1-datasheets-3571.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 73W Tc | 14.1A | 32.4A | 0.38Ohm | 173 mJ | N-Channel | 584pF @ 100V | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 9.9A Tc | 24.8nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfz34nstrlpbf-datasheets-4174.pdf | 55V | 29A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 40mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 68W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 49ns | 40 ns | 31 ns | 29A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 68W Tc | 86 ns | 55V | N-Channel | 700pF @ 25V | 4 V | 40m Ω @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF9310TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf9310trpbf-datasheets-4217.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 4.6MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | R-PDSO-G3 | 25 ns | 47ns | 70 ns | 65 ns | -20A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.8V | 2.5W Ta | 630 mJ | -30V | P-Channel | 5250pF @ 15V | -1.8 V | 4.6m Ω @ 20A, 10V | 2.4V @ 100μA | 20A Tc | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSZ150N10LS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz150n10ls3gatma1-datasheets-4373.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | No SVHC | 8 | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N5 | 4.6ns | 40A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 2.1W Ta 63W Tc | 160A | 0.02Ohm | 100V | N-Channel | 2500pF @ 50V | 15m Ω @ 20A, 10V | 2.1V @ 33μA | 40A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLZ44NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irlz44nstrlpbf-datasheets-4204.pdf | 55V | 47A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 22mOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | R-PSSO-G2 | 11 ns | 84ns | 15 ns | 26 ns | 47A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 110W Tc | 120 ns | 55V | N-Channel | 1700pF @ 25V | 2 V | 22m Ω @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
| IRF6623 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6623-datasheets-4357.pdf | DirectFET™ Isometric ST | 3 | EAR99 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.4W Ta 42W Tc | 16A | 120A | 0.0057Ohm | 43 mJ | N-Channel | 1360pF @ 10V | 5.7m Ω @ 15A, 10V | 2.2V @ 250μA | 16A Ta 55A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N03S4L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n03s4l03atma1-datasheets-4406.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 6ns | 37 ns | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 94W Tc | 80A | 95 mJ | N-Channel | 5100pF @ 25V | 3.3m Ω @ 80A, 10V | 2.2V @ 45μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3805SPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-iram1363063b2-datasheets-1842.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 300W Tc | N-Channel | 7.96pF @ 25V | 3.3mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 290nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB037N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb037n06n3gatma1-datasheets-4428.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30 ns | 70ns | 5 ns | 40 ns | 90A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 188W Tc | N-Channel | 11000pF @ 30V | 3.7m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 98nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF530NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf530nstrlpbf-datasheets-3873.pdf | 100V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 90MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 3.8W | 1 | 175°C | R-PSSO-G2 | 9.2 ns | 22ns | 25 ns | 35 ns | 17A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 70W Tc | 140 ns | 60A | 100V | N-Channel | 920pF @ 25V | 4 V | 90m Ω @ 9A, 10V | 4V @ 250μA | 17A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| FQI9N50TU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqi9n50tu-datasheets-4446.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 3.13W Ta 147W Tc | 9A | 36A | 0.73Ohm | 360 mJ | N-Channel | 1.45pF @ 25V | 730m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2407TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr2407trpbf-datasheets-4163.pdf | 75V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 26mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 90ns | 66 ns | 65 ns | 42A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-252AA | 150 ns | 75V | N-Channel | 2400pF @ 25V | 4 V | 26m Ω @ 25A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRFR3708TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3708trpbf-datasheets-4248.pdf | 30V | 61A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 12.5mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 87W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 7.2 ns | 50ns | 3.7 ns | 17.6 ns | 61A | 12V | 30V | SILICON | DRAIN | SWITCHING | 2V | 87W Tc | TO-252AA | 244A | 30V | N-Channel | 2417pF @ 15V | 2 V | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 61A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||
| IRF7473TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7473trpbf-datasheets-4284.pdf | 100V | 6.9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | 24 ns | 20ns | 11 ns | 29 ns | 6.9A | 20V | 100V | SILICON | SWITCHING | 6.3 mm | 5.5V | 2.5W Ta | 55A | 0.026Ohm | 100V | N-Channel | 3180pF @ 25V | 5.5 V | 26m Ω @ 4.1A, 10V | 5.5V @ 250μA | 6.9A Ta | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRLR2908TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr2908trlpbf-datasheets-3989.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 120W Tc | TO-252AA | 30A | 150A | 0.028Ohm | 250 mJ | N-Channel | 1890pF @ 25V | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 30A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP149H6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp149h6327xtsa1-datasheets-3532.pdf | TO-261-4, TO-261AA | 10 Weeks | 200V | 1.8W Ta | N-Channel | 430pF @ 25V | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 660mA Ta | 14nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS7064N7 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds8962c-datasheets-2212.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 16.5A | 60A | 0.007Ohm | N-Channel | 3.355pF @ 15V | 7m Ω @ 16.5A, 4.5V | 2V @ 250μA | 16.5A Ta | 48nC @ 4.5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPW90R800C3FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw90r800c3fksa1-datasheets-4059.pdf | TO-247-3 | PG-TO247-3 | 900V | 104W Tc | N-Channel | 1.1pF @ 100V | 800mOhm @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF5N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb17p10tm-datasheets-3977.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 90W Tc | 4.1A | 16.4A | 660 mJ | N-Channel | 1.55pF @ 25V | 2.3 Ω @ 2.05A, 10V | 5V @ 250μA | 4.1A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC026NE2LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc026ne2ls5atma1-datasheets-4076.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | yes | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 82A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 29W Tc | 24A | 0.004Ohm | 14 mJ | N-Channel | 1100pF @ 12V | 2.6m Ω @ 30A, 10V | 2V @ 250μA | 24A Ta 82A Tc | 16nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2905TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irlr2905trlpbf-datasheets-6372.pdf | 55V | 41A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 27mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 69W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 11 ns | 84ns | 15 ns | 26 ns | 42A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 110W Tc | TO-252AA | 120 ns | 20A | 55V | N-Channel | 1700pF @ 25V | 2 V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||
| MTP20N15EG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mtp20n15eg-datasheets-4102.pdf | TO-220-3 | TO-220AB | 150V | 112W Tc | N-Channel | 1.627pF @ 25V | 130mOhm @ 10A, 10V | 4V @ 250μA | 20A Tc | 55.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R280P7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r280p7sauma1-datasheets-4111.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | PG-TO252-3 | 600V | 53W Tc | 214mOhm | N-Channel | 761pF @ 400V | 280mOhm @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR24N15DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfr24n15dtrpbf-datasheets-4130.pdf | 150V | 24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 2.39mm | Lead Free | 2 | 12 Weeks | No SVHC | 95Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 53ns | 15 ns | 19 ns | 24A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5V | 140W Tc | TO-252AA | 96A | 150V | N-Channel | 890pF @ 25V | 5 V | 95m Ω @ 14A, 10V | 5V @ 250μA | 24A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IRFH5104TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-irfh5104tr2pbf-datasheets-4186.pdf | 8-VQFN Exposed Pad | 6mm | 900μm | 5mm | Lead Free | No SVHC | 3.5MOhm | 8 | No | 114W | 1 | PQFN (5x6) | 3.12nF | 9.5 ns | 15ns | 10 ns | 20 ns | 24A | 20V | 40V | 4V | 3.6W Ta 114W Tc | 47 ns | 3.5mOhm | 40V | N-Channel | 3120pF @ 25V | 4 V | 3.5mOhm @ 50A, 10V | 4V @ 100μA | 24A Ta 100A Tc | 80nC @ 10V | 3.5 mΩ | 10V | ±20V |
