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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPN70R2K0P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn70r2k0p7satma1-datasheets-2736.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 6W Tc | 2Ohm | N-Channel | 130pF @ 400V | 2 Ω @ 500mA, 10V | 3.5V @ 30μA | 3A Tc | 3.8nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPB04N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb04n03la-datasheets-3609.pdf | 25V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 4.5ns | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 107W Tc | 385A | 0.0064Ohm | 290 mJ | N-Channel | 3877pF @ 15V | 3.9m Ω @ 55A, 10V | 2V @ 60μA | 80A Tc | 32nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2SK2625ALS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk2625als-datasheets-3692.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 600V | 2W Ta 30W Tc | N-Channel | 700pF @ 20V | 2Ohm @ 2.5A, 15V | 4.4A Tc | 20nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB090N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb090n06n3gatma1-datasheets-3694.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 71W | 1 | Not Qualified | R-PSSO-G2 | 15 ns | 40ns | 5 ns | 20 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 71W Tc | 200A | 0.009Ohm | N-Channel | 2900pF @ 30V | 9m Ω @ 50A, 10V | 4V @ 34μA | 50A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| NVB6413ANT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd25p03lg-datasheets-2466.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK-3 | 100V | 136W Tc | N-Channel | 1.8pF @ 25V | 28mOhm @ 42A, 10V | 4V @ 250μA | 42A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB50R250CPATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-ipd30n03s2l07atma1-datasheets-4501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 550V | 114W Tc | N-Channel | 1.42pF @ 100V | 250mOhm @ 7.8A, 10V | 3.5V @ 520μA | 13A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R310CEXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipa80r310cexksa1-datasheets-3763.pdf | TO-220-3 Full Pack | PG-TO220 Full Pack | 800V | 35W Tc | N-Channel | 2.32pF @ 100V | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 6.8A Tc | 91nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDI33N25TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdi33n25tu-datasheets-3765.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | FAST SWITCHING, AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 235W Tc | 33A | 132A | 0.094Ohm | 918 mJ | N-Channel | 2.135pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| 2SK4197LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4198fs-datasheets-6874.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 600V | 2W Ta 28W Tc | N-Channel | 260pF @ 30V | 3.25Ohm @ 1.8A, 10V | 5V @ 1mA | 3.5A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R500CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipd50r500cebtma1-datasheets-9366.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 57W Tc | 24A | 0.5Ohm | 129 mJ | N-Channel | 433pF @ 100V | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 7.6A Tc | 18.7nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD60R360P7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd60r360p7sauma1-datasheets-3653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 41W Tc | 26A | 0.36Ohm | 27 mJ | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFH5007TR2PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfh5007tr2pbf-datasheets-3656.pdf | 8-PowerTDFN | 8-PQFN (5x6) | 75V | N-Channel | 4.29pF @ 25V | 5.9mOhm @ 50A, 10V | 4V @ 150μA | 17A Ta 100A Tc | 98nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2624ALS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk2624als-datasheets-3658.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 600V | 2W Ta 25W Tc | N-Channel | 550pF @ 20V | 2.6Ohm @ 1.8A, 15V | 3.5A Ta | 15nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76445S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76445p3-datasheets-3563.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 310W Tc | 75A | 0.008Ohm | N-Channel | 4.965pF @ 25V | 6.5m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 150nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| FQAF9N50 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqaf9n50-datasheets-3581.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 90W Tc | 7.2A | 29A | 0.73Ohm | 360 mJ | N-Channel | 1.45pF @ 25V | 730m Ω @ 3.6A, 10V | 5V @ 250μA | 7.2A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRLMS5703TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irlms5703trpbf-datasheets-2651.pdf | -30V | -2.3A | SOT-23-6 | 2.9972mm | 1.4478mm | 1.75mm | Lead Free | 6 | 7 Weeks | No SVHC | 180mOhm | 6 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 1.7W | 1 | 10 ns | 12ns | 8.4 ns | 20 ns | -2.3A | 20V | -30V | SILICON | SWITCHING | 30V | -1V | 1.7W Ta | 2.4A | -30V | P-Channel | 170pF @ 25V | -1 V | 180m Ω @ 1.6A, 10V | 1V @ 250μA | 2.4A Ta | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| NTP60N06LG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nttfs4945ntag-datasheets-5366.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.4W Ta 150W Tj | TO-220AB | 60A | 180A | 0.016Ohm | 454 mJ | N-Channel | 3.075pF @ 25V | 16m Ω @ 30A, 5V | 2V @ 250μA | 60A Ta | 65nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||
| NTB60N06LT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nttfs4945ntag-datasheets-5366.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 2.4W Ta 150W Tj | N-Channel | 3.075pF @ 25V | 16mOhm @ 30A, 5V | 2V @ 250μA | 60A Ta | 65nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP75N08 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds2170n3-datasheets-4434.pdf | TO-220-3 | 3 | yes | AVALANCHE ENERGY RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 75V | 131W Tc | TO-220AB | 75A | 300A | 0.011Ohm | 1164 mJ | N-Channel | 4.468pF @ 25V | 11m Ω @ 37.5A, 10V | 4V @ 250μA | 75A Tc | 104nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPI12N50C3XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp12n50c3xksa1-datasheets-8654.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 560V | 125W Tc | N-Channel | 1.2pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50R250CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi90r800c3xksa1-datasheets-7756.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 500V | 114W Tc | N-Channel | 1.42pF @ 100V | 250mOhm @ 7.8A, 10V | 3.5V @ 520μA | 13A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-04 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n04s3h4atma1-datasheets-5582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 55V | 214W Tc | N-Channel | 14.23pF @ 25V | 4.1mOhm @ 80A, 10V | 4V @ 150μA | 100A Tc | 314nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC079N03SG | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-bsc079n03sg-datasheets-3619.pdf | 30V | 40A | 8-PowerTDFN | Lead Free | 5 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | FLAT | 260 | 8 | NOT SPECIFIED | 2.8W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | 4.2ns | 3.4 ns | 21 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 60W Tc | 14.6A | 160A | 0.0116Ohm | 120 mJ | 30V | N-Channel | 2230pF @ 15V | 7.9m Ω @ 40A, 10V | 2V @ 30μA | 14.6A Ta 40A Tc | 17nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| IRLZ24NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | 55V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 60mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 45W | 1 | R-PSSO-G2 | 7.1 ns | 74ns | 29 ns | 20 ns | 18A | 16V | 55V | SILICON | DRAIN | SWITCHING | 3.8W Ta 45W Tc | 60 ns | 90 ns | 72A | 68 mJ | 55V | N-Channel | 480pF @ 25V | 2 V | 60m Ω @ 11A, 10V | 2V @ 250μA | 18A Tc | 15nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||
| FQPF9N25CT | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqu4n50tu-datasheets-6749.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 38W Tc | TO-220AB | 8.8A | 35.2A | 0.43Ohm | 285 mJ | N-Channel | 710pF @ 25V | 430m Ω @ 4.4A, 10V | 4V @ 250μA | 8.8A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF7476TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7476trpbf-datasheets-3505.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | 12 Weeks | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | 11 ns | 29ns | 8.3 ns | 19 ns | 15A | 12V | SILICON | SWITCHING | 2.5W Ta | 12V | N-Channel | 2550pF @ 6V | 8m Ω @ 15A, 4.5V | 1.9V @ 250μA | 15A Ta | 40nC @ 4.5V | 2.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| HUFA76445P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76445p3-datasheets-3563.pdf | TO-220-3 | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 310W Tc | TO-220AB | 75A | 0.008Ohm | N-Channel | 4.965pF @ 25V | 6.5m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 150nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPP65R280E6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw65r280e6fksa1-datasheets-0340.pdf | TO-220-3 | PG-TO220-3 | 650V | 104W Tc | N-Channel | 950pF @ 100V | 280mOhm @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75343G3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-hufa76407dk8t-datasheets-2352.pdf | TO-247-3 | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 270W Tc | 75A | 0.009Ohm | N-Channel | 3pF @ 25V | 9m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 205nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRL2203N | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-auirl2203n-datasheets-3491.pdf | TO-220-3 | TO-220AB | 30V | 180W Tc | N-Channel | 3.29pF @ 25V | 7mOhm @ 60A, 10V | 1V @ 250μA | 75A Tc | 60nC @ 4.5V | 4.5V 10V | ±16V |
