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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQB17P10TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb65n06tm-datasheets-8137.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.75W Ta 100W Tc | 16.5A | 66A | 0.19Ohm | 580 mJ | P-Channel | 1.1pF @ 25V | 190m Ω @ 8.25A, 10V | 4V @ 250μA | 16.5A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| HAF1002-90STL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hc55140im-datasheets-2696.pdf | SC-83 | 4-LDPAK | 60V | 50W Tc | P-Channel | 90mOhm @ 7.5A, 10V | 15A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6706S2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6706s2tr1pbf-datasheets-4004.pdf | DirectFET™ Isometric S1 | 4.826mm | 558.8μm | 3.95mm | Lead Free | 6.5MOhm | 5 | No | 26W | DIRECTFET S1 | 1.81nF | 12 ns | 20ns | 9.2 ns | 9.9 ns | 17A | 20V | 25V | 1.8W Ta 26W Tc | 6.5mOhm | 25V | N-Channel | 1810pF @ 13V | 3.8mOhm @ 17A, 10V | 2.35V @ 25μA | 17A Ta 63A Tc | 20nC @ 4.5V | 3.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2908TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr2908trlpbf-datasheets-3989.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 120W Tc | TO-252AA | 30A | 150A | 0.028Ohm | 250 mJ | N-Channel | 1890pF @ 25V | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 30A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| BSP149H6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp149h6327xtsa1-datasheets-3532.pdf | TO-261-4, TO-261AA | 10 Weeks | 200V | 1.8W Ta | N-Channel | 430pF @ 25V | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 660mA Ta | 14nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD048N06L3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd048n06l3gbtma1-datasheets-3864.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 115W Tc | TO-252AA | 90A | 360A | 0.0048Ohm | 68 mJ | N-Channel | 8400pF @ 30V | 4.8m Ω @ 90A, 10V | 2.2V @ 58μA | 90A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFS7434PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs7434pbf-datasheets-3884.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 294W Tc | N-Channel | 10.82pF @ 25V | 1.6mOhm @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 324nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlz44zpbf-datasheets-1663.pdf | 55V | 51A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 13.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 160ns | 42 ns | 25 ns | 51A | 16V | 55V | SILICON | DRAIN | SWITCHING | 3V | 80W Tc | 32 ns | 204A | 78 mJ | 55V | N-Channel | 1620pF @ 25V | 3 V | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 51A Tc | 36nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| BSP300H6327XUSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsp300h6327xusa1-datasheets-3921.pdf&product=infineontechnologies-bsp300h6327xusa1-6848301 | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 4 | 10 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | 2A | e3 | Tin (Sn) | 800V | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.8W | 1 | 7 ns | 16ns | 21 ns | 27 ns | 190mA | 20V | 800V | SILICON | DRAIN | 1.8W Ta | 36 mJ | 800V | N-Channel | 230pF @ 25V | 20 Ω @ 190mA, 10V | 4V @ 1mA | 190mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF2907ZSPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf2907zspbf-datasheets-3928.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R230P6FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw60r230p6fksa1-datasheets-3930.pdf | TO-247-3 | PG-TO247-3 | 600V | 126W Tc | N-Channel | 1.45pF @ 100V | 230mOhm @ 6.4A, 10V | 4.5V @ 530μA | 16.8A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7420TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7420trpbf-datasheets-3737.pdf | -12V | -11.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 14MOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | Other Transistors | 8.8 ns | 8.8ns | 225 ns | 291 ns | 11.5mA | 8V | SILICON | SWITCHING | 12V | 2.5W Ta | 46A | -12V | P-Channel | 3529pF @ 10V | -900 mV | 14m Ω @ 11.5A, 4.5V | 900mV @ 250μA | 11.5A Tc | 38nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IPB04N03LAT | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-ipb04n03la-datasheets-3609.pdf | 25V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | PG-TO263-3-2 | 3.877nF | 4.5ns | 80A | 25V | 107W Tc | N-Channel | 3877pF @ 15V | 3.9mOhm @ 55A, 10V | 2V @ 60μA | 80A Tc | 32nC @ 5V | 3.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8662 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp2670-datasheets-2682.pdf | 8-PowerTDFN | 5 | NOT SPECIFIED | YES | DUAL | NO LEAD | 240 | 1 | COMMERCIAL | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 83W Tc | MO-240AA | 28A | 200A | 0.002Ohm | 726 mJ | N-Channel | 6.42pF @ 15V | 2m Ω @ 28A, 10V | 3V @ 250μA | 28A Ta 49A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLU3110Z | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-auirlu3110z-datasheets-3965.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 100V | 140W Tc | N-Channel | 3.98pF @ 25V | 14mOhm @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R299CPATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd50n06s4l08atma1-datasheets-4675.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 600V | 96W Tc | N-Channel | 1.1pF @ 100V | 299mOhm @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3710Z | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-auirf3710z-datasheets-3824.pdf | TO-220-3 | TO-220AB | 100V | 160W Tc | N-Channel | 2.9pF @ 25V | 18mOhm @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP10N60C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp3n90-datasheets-6154.pdf | TO-220-3 | 3 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 156W Tc | TO-220AB | 9.5A | 38A | 0.73Ohm | 700 mJ | N-Channel | 2.04pF @ 25V | 730m Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 57nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7833TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr7833trlpbf-datasheets-1586.pdf | 30V | 98A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 6.9ns | 15 ns | 23 ns | 140A | 20V | 30V | SILICON | DRAIN | SWITCHING | 2.3V | 140W Tc | TO-252AA | 560A | 30V | N-Channel | 4010pF @ 15V | 2.3 V | 4.5m Ω @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FQP70N08 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf17p06-datasheets-5352.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 155W Tc | TO-220AB | 70A | 280A | 0.017Ohm | 1150 mJ | N-Channel | 2.7pF @ 25V | 17m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 98nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf630npbf-datasheets-9120.pdf | 200V | 9.3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 300mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 82W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.9 ns | 14ns | 15 ns | 27 ns | 9.3A | 20V | SILICON | DRAIN | SWITCHING | 82W Tc | 94 mJ | 200V | N-Channel | 575pF @ 25V | 4 V | 300m Ω @ 5.4A, 10V | 4V @ 250μA | 9.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB50R250CPATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-ipd30n03s2l07atma1-datasheets-4501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 550V | 114W Tc | N-Channel | 1.42pF @ 100V | 250mOhm @ 7.8A, 10V | 3.5V @ 520μA | 13A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R310CEXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipa80r310cexksa1-datasheets-3763.pdf | TO-220-3 Full Pack | PG-TO220 Full Pack | 800V | 35W Tc | N-Channel | 2.32pF @ 100V | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 6.8A Tc | 91nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDI33N25TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdi33n25tu-datasheets-3765.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | FAST SWITCHING, AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 235W Tc | 33A | 132A | 0.094Ohm | 918 mJ | N-Channel | 2.135pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPF13N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf13n03lag-datasheets-2614.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 46W Tc | 30A | 210A | 0.0128Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 12.8m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2632LS | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk2858t1a-datasheets-1848.pdf | TO-220-3 Full Pack | TO-220FI(LS) | 800V | 2W Ta 25W Tc | N-Channel | 550pF @ 20V | 4.8Ohm @ 1.3A, 15V | 2.5A Ta | 15nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0902NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz0902nsiatma1-datasheets-3719.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | no | EAR99 | Tin | No | e3 | Halogen Free | DUAL | 8 | 2.5W | 1 | S-PDSO-N3 | 5.4ns | 21A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 48W Tc | 0.0037Ohm | 30 mJ | N-Channel | 1500pF @ 15V | 2.8m Ω @ 30A, 10V | 2V @ 250μA | 21A Ta 40A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI120N06S403AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n06s403aksa1-datasheets-7382.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 60V | 167W Tc | N-Channel | 13.15pF @ 25V | 3.2mOhm @ 100A, 10V | 4V @ 120μA | 120A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R950C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r950c6atma1-datasheets-3809.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 37W | 1 | R-PSSO-G2 | 10 ns | 8ns | 13 ns | 60 ns | 4.4A | 30V | 600V | SILICON | DRAIN | SWITCHING | 37W Tc | 0.95Ohm | 46 mJ | 600V | N-Channel | 280pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQA5N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf19n60-datasheets-5217.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 185W Tc | 5.8A | 23.2A | 660 mJ | N-Channel | 1.55pF @ 25V | 2.3 Ω @ 2.9A, 10V | 5V @ 250μA | 5.8A Tc | 40nC @ 10V | 10V | ±30V |
