Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPI60R385CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp065n03lgxksa1-datasheets-4542.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 650V | 83W Tc | N-Channel | 790pF @ 100V | 385mOhm @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3410TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3410trpbf-datasheets-1045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3W Ta 110W Tc | TO-252AA | 30A | 125A | 0.039Ohm | 140 mJ | N-Channel | 1690pF @ 25V | 39m Ω @ 18A, 10V | 4V @ 250μA | 31A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD50R380CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd50r380ceauma1-datasheets-3571.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.55mm | Contains Lead | 2 | 18 Weeks | 3 | yes | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 98W | 1 | 150°C | R-PSSO-G2 | 7.2 ns | 35 ns | 14.1A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 98W Tc | 500V | N-Channel | 584pF @ 100V | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 14.1A Tc | 24.8nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||
| IRL540NSPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irl540nspbf-datasheets-3516.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 3.8W Ta 140W Tc | N-Channel | 1.8pF @ 25V | 44mOhm @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75343S3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75639s3-datasheets-4368.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 55V | 270W Tc | N-Channel | 3pF @ 25V | 9mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 205nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R5-100XSQ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-psmn8r5100xsq-datasheets-3520.pdf | TO-220-3 Full Pack, Isolated Tab | TO-220F | 100V | 55W Tc | N-Channel | 5.512pF @ 50V | 8.5mOhm @ 10A, 10V | 4V @ 1mA | 49A Tj | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70R1K4CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd70r1k4ceauma1-datasheets-2906.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 5.4A | 700V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 53W Tc | 8.3A | 26 mJ | N-Channel | 225pF @ 100V | 1.4 Ω @ 1A, 10V | 3.5V @ 130μA | 5.4A Tc | 10.5nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQAF16N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf16n25-datasheets-3539.pdf | TO-3P-3 Full Pack | 3 | yes | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 85W Tc | 12.4A | 50A | 0.23Ohm | 560 mJ | N-Channel | 1.2pF @ 25V | 230m Ω @ 6.2A, 10V | 5V @ 250μA | 12.4A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| HUF75343S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75639s3-datasheets-4368.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 55V | 270W Tc | N-Channel | 3pF @ 25V | 9mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 205nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120N04S401AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n04s401aksa1-datasheets-3543.pdf | TO-220-3 | PG-TO220-3-1 | 40V | 188W Tc | N-Channel | 14pF @ 25V | 1.9mOhm @ 100A, 10V | 4V @ 140μA | 120A Tc | 176nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDBA100N10BT4H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndf04n62zg-datasheets-5755.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263) | 100V | 110W Tc | N-Channel | 2.95pF @ 50V | 6.9mOhm @ 50A, 15V | 4V @ 1mA | 100A Ta | 35nC @ 10V | 10V 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZSPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf730-datasheets-9005.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 160W Tc | N-Channel | 2.9pF @ 25V | 18mOhm @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN80R2K4P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn80r2k4p7atma1-datasheets-3200.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 6.3W Tc | N-Channel | 150pF @ 500V | 2.4 Ω @ 800mA, 10V | 3.5V @ 40μA | 2.5A Tc | 7.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3306PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs3306pbf-datasheets-3452.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 230W Tc | N-Channel | 4.52pF @ 50V | 4.2mOhm @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N06S402ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp120n06s402aksa1-datasheets-8144.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 60V | 188W Tc | N-Channel | 15.75pF @ 25V | 2.4mOhm @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6609A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6993-datasheets-2683.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 6.3A | 0.032Ohm | P-Channel | 930pF @ 15V | 32m Ω @ 7A, 10V | 3V @ 250μA | 6.3A Ta | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S303AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips65r1k5ceakma1-datasheets-5307.pdf | TO-220-3 | PG-TO220-3-1 | 40V | 188W Tc | N-Channel | 7.3pF @ 25V | 3.5mOhm @ 80A, 10V | 4V @ 120μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2307ZPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs7540pbf-datasheets-2977.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 75V | 110W Tc | N-Channel | 2.19pF @ 25V | 16mOhm @ 32A, 10V | 4V @ 100μA | 42A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF13N50T | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf34n20-datasheets-9680.pdf | TO-220-3 Full Pack | TO-220F | 500V | 56W Tc | N-Channel | 2.3pF @ 25V | 430mOhm @ 6.25A, 10V | 5V @ 250μA | 12.5A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75842S3S | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-hufa76432s3st-datasheets-5029.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 230W Tc | 43A | 0.042Ohm | N-Channel | 2.73pF @ 25V | 42m Ω @ 43A, 10V | 4V @ 250μA | 43A Tc | 175nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N60 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf9n50ydtu-datasheets-7969.pdf | TO-220-3 Full Pack | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 44W Tc | 3.6A | 14.4A | 440 mJ | N-Channel | 1pF @ 25V | 1.5 Ω @ 1.8A, 10V | 5V @ 250μA | 3.6A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPI90R800C3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi90r800c3xksa1-datasheets-7755.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 900V | 104W Tc | N-Channel | 1.1pF @ 100V | 800mOhm @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R2K4P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r2k4p7atma1-datasheets-3362.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 22W Tc | TO-252AA | 5.3A | 4 mJ | N-Channel | 150pF @ 500V | 2.4 Ω @ 800mA, 10V | 3.5V @ 40μA | 2.5A Tc | 7.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7811AVTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7811avtrpbf-datasheets-3368.pdf | 30V | 10.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 14MOhm | 8 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 8.6 ns | 21ns | 10 ns | 43 ns | 10.8A | 20V | SILICON | SWITCHING | 3V | 2.5W Ta | 30V | N-Channel | 1801pF @ 10V | 3 V | 14m Ω @ 15A, 4.5V | 3V @ 250μA | 10.8A Ta | 26nC @ 5V | 4.5V | ±20V | ||||||||||||||||||||||||||||||||
| 2SJ661-1EX | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sj655-datasheets-7757.pdf | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF14N30 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf90n08-datasheets-4989.pdf | TO-3P-3 Full Pack | 3 | yes | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 300V | 300V | 90W Tc | 11.4A | 45.6A | 0.29Ohm | 600 mJ | N-Channel | 1.36pF @ 25V | 290m Ω @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4435DYTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-si4435dytrpbf-datasheets-3297.pdf | -30V | -8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 20mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | Tin | No | DUAL | GULL WING | 1 | Single | 2.5W | 1 | 150°C | 16 ns | 17ns | 31 ns | 130 ns | -8A | 20V | -30V | SILICON | SWITCHING | 30V | 6.3 mm | -1V | 2.5W Ta | 51 ns | 8A | 50A | -30V | P-Channel | 2320pF @ 15V | -1 V | 20m Ω @ 8A, 10V | 1V @ 250μA | 8A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| MTB30P06VT4 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mtb30p06vt4-datasheets-3424.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | AVALANCHE RATED | unknown | e0 | TIN LEAD | YES | SINGLE | GULL WING | 240 | 3 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3W Ta 125W Tc | 30A | 105A | 0.08Ohm | 450 mJ | P-Channel | 2.19pF @ 25V | 80m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 80nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||
| IPB90N06S4L04ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd60r520cpatma1-datasheets-7718.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 60V | 150W Tc | N-Channel | 13pF @ 25V | 3.4mOhm @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM830TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfhm830trpbf-datasheets-3347.pdf | 8-VQFN Exposed Pad | 3.3mm | 1mm | 3.3mm | Lead Free | 5 | 12 Weeks | No SVHC | 6MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 2.7W | 1 | FET General Purpose Power | S-PDSO-N5 | 12 ns | 25ns | 9.2 ns | 13 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.7W Ta 37W Tc | 40A | 30V | N-Channel | 2155pF @ 25V | 1.8 V | 3.8m Ω @ 20A, 10V | 2.35V @ 50μA | 21A Ta 40A Tc | 31nC @ 10V | 4.5V 10V | ±20V |
