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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF1405SPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf1405spbf-datasheets-3128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 200W Tc | N-Channel | 5.48pF @ 25V | 5.3mOhm @ 101A, 10V | 4V @ 250μA | 131A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD06N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd06n03lbg-datasheets-3137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 83W Tc | TO-252AA | 50A | 200A | 0.0061Ohm | 160 mJ | N-Channel | 2800pF @ 15V | 6.1m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDD5810 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdd7030bl-datasheets-4673.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 72W Tc | TO-252AA | 7.7A | 0.027Ohm | 45 mJ | N-Channel | 1.89pF @ 25V | 22m Ω @ 32A, 10V | 2V @ 250μA | 7.4A Ta 37A Tc | 34nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLZ44ZL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-auirlz44zl-datasheets-3055.pdf | TO-220-3 | TO-220AB | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4615PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irg4bc30sstrlp-datasheets-0119.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 150V | 144W Tc | N-Channel | 1.75pF @ 50V | 42mOhm @ 21A, 10V | 5V @ 100μA | 33A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPS02N60C3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ss9014bbu-datasheets-1950.pdf | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 650V | 25W Tc | N-Channel | 200pF @ 25V | 3Ohm @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 12.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI2P25TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb7n10tm-datasheets-4267.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 3.13W Ta 52W Tc | 2.3A | 9.2A | 4Ohm | 120 mJ | P-Channel | 250pF @ 25V | 4 Ω @ 1.15A, 10V | 5V @ 250μA | 2.3A Tc | 8.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF121 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf121-datasheets-3075.pdf | TO-204AA, TO-3 | 2 | no | e0 | TIN LEAD | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 80V | 9.2A | 37A | 0.27Ohm | N-Channel | 8A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB16N25CTM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi5n15tu-datasheets-4800.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | 3 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 3.13W Ta 139W Tc | 15.6A | 62.4A | 0.27Ohm | 410 mJ | N-Channel | 1.08pF @ 25V | 270m Ω @ 7.8A, 10V | 4V @ 250μA | 15.6A Tc | 53.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPA08N50C3XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp100n03s203-datasheets-9766.pdf | TO-220-3 Full Pack | PG-TO220-FP | 560V | 32W Tc | N-Channel | 750pF @ 25V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.6A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU7N60TU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdb4020p-datasheets-7223.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 83W Tc | 7A | 21A | 0.6Ohm | 230 mJ | N-Channel | 920pF @ 25V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70R900P7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd70r900p7sauma1-datasheets-2993.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.55mm | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1 | 30.5W | 150°C | 12 ns | 58 ns | 6A | 16V | 30.5W Tc | 700V | N-Channel | 211pF @ 400V | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 6A Tc | 6.8nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC340N08NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsc340n08ns3gatma1-datasheets-3058.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 2.5W | 1 | R-PDSO-F5 | 8 ns | 3ns | 2 ns | 11 ns | 7A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 32W Tc | 23A | 92A | 0.034Ohm | 20 mJ | N-Channel | 756pF @ 40V | 34m Ω @ 12A, 10V | 3.5V @ 12μA | 7A Ta 23A Tc | 9.1nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSP324H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsp324h6327xtsa1-datasheets-3003.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 6.7mm | Lead Free | 10 Weeks | No SVHC | 3 | Tin | Halogen Free | Single | 1.7W | 1 | PG-SOT223-4 | 154pF | 4.6 ns | 4.4ns | 68 ns | 17 ns | 170mA | 20V | 400V | 400V | 400V | 1.9V | 1.8W Ta | 13.6Ohm | N-Channel | 154pF @ 25V | 1.9 V | 25Ohm @ 170mA, 10V | 2.3V @ 94μA | 170mA Ta | 5.9nC @ 10V | 25 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPN70R900P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn70r900p7satma1-datasheets-2843.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 6.5W Tc | 0.9Ohm | N-Channel | 211pF @ 400V | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 6A Tc | 6.8nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8329TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8329trpbf-datasheets-2932.pdf | 8-PowerTDFN | Lead Free | 5 | 39 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 2.6W | 1 | FET General Purpose Power | S-PDSO-F5 | 14 ns | 74ns | 14 ns | 14 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 2.6W Ta 33W Tc | 230A | 43 mJ | 30V | N-Channel | 1710pF @ 10V | 6.1m Ω @ 20A, 10V | 2.2V @ 25μA | 16A Ta 57A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS4941NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4941nt1g-datasheets-2968.pdf | DFN | Lead Free | 5 | 2 Weeks | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | 910mW | DUAL | FLAT | 5 | Single | 2.56W | 1 | FET General Purpose Power | 1.65nF | 11.6 ns | 22ns | 2.7 ns | 20 ns | 47A | 20V | DRAIN | SWITCHING | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 9A | 9mOhm | 42 mJ | 30V | 6.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| IPD110N12N3GBUMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipg15n06s3l45-datasheets-2793.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 120V | 136W Tc | N-Channel | 4.31pF @ 60V | 11mOhm @ 75A, 10V | 4V @ 83μA | 75A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2L-09 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp80n06s2l09-datasheets-3049.pdf | TO-220-3 | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | MATTE TIN | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 190W Tc | TO-220AB | 80A | 320A | 0.0113Ohm | 370 mJ | N-Channel | 3.48pF @ 25V | 8.5m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPB02N60S5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb02n60s5atma1-datasheets-3038.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | no | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 1.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 25W Tc | 3Ohm | 50 mJ | N-Channel | 240pF @ 25V | 3 Ω @ 1.1A, 10V | 5.5V @ 80μA | 1.8A Tc | 9.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP65R660CFDXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips090n03lgakma1-datasheets-5210.pdf | TO-220-3 | PG-TO220-3 | 650V | 62.5W Tc | N-Channel | 615pF @ 100V | 660mOhm @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFF9250L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sff9250l-datasheets-2966.pdf | TO-3P-3 Full Pack | 3 | yes | LOGIC LEVEL COMPATIBLE | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 90W Tc | 12.6A | 50.4A | 0.23Ohm | 990 mJ | P-Channel | 3.25pF @ 25V | 230m Ω @ 6.3A, 5V | 2V @ 250μA | 12.6A Tc | 120nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76639S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75344p3-datasheets-8067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 180W Tc | 51A | 0.027Ohm | N-Channel | 2.4pF @ 25V | 26m Ω @ 51A, 10V | 3V @ 250μA | 51A Tc | 86nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7540PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs7540pbf-datasheets-2976.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 160W Tc | N-Channel | 4.555pF @ 25V | 5.1mOhm @ 65A, 10V | 3.7V @ 100μA | 110A Tc | 130nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8453LZ | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdd26an06a0-datasheets-8155.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.1W Ta 66W Tc | 50A | 100A | 0.011Ohm | 253 mJ | N-Channel | 3.545pF @ 20V | 7m Ω @ 17.6A, 10V | 3V @ 250μA | 16.1A Ta 50A Tc | 66nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQB5N60TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd12p10tm-datasheets-6846.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 3.13W Ta 120W Tc | 5A | 20A | 2Ohm | 300 mJ | N-Channel | 730pF @ 25V | 2 Ω @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPN50R800CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipn50r800ceatma1-datasheets-2980.pdf | TO-261-3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 7.6A | 500V | 3V | 5W Tc | N-Channel | 280pF @ 100V | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 7.6A Tc | 12.4nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB16N15TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb5n50cftm-datasheets-2855.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.75W Ta 108W Tc | 16.4A | 65.6A | 0.16Ohm | 230 mJ | N-Channel | 910pF @ 25V | 160m Ω @ 8.2A, 10V | 4V @ 250μA | 16.4A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| SFP9640L | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-sfp9640l-datasheets-2991.pdf | TO-220-3 | yes | unknown | 3 | 200V | 98W Tc | P-Channel | 1.585pF @ 25V | 500m Ω @ 5.5A, 5V | 2V @ 250μA | 11A Tc | 59nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0909NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0909nsatma1-datasheets-2858.pdf | 8-PowerTDFN | Contains Lead | 5 | 39 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | 9.6 ns | 4.4ns | 5.4 ns | 8.9 ns | 44A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34V | 2.5W Ta 27W Tc | 12A | 176A | 0.0091Ohm | 10 mJ | N-Channel | 1110pF @ 15V | 9.2m Ω @ 20A, 10V | 2V @ 250μA | 12A Ta 44A Tc | 15nC @ 10V | 4.5V 10V | ±20V |
