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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| HUFA75545P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76419p3-datasheets-5680.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 270W Tc | TO-220AB | 75A | 0.01Ohm | N-Channel | 3.75pF @ 25V | 10m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 235nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7416GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineon-irf7416gtrpbf-datasheets-4917.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | Single | 2.5W | 8-SO | 1.7nF | 18 ns | 49ns | 60 ns | 59 ns | 10A | 20V | 30V | 2.5W Ta | 20mOhm | -30V | P-Channel | 1700pF @ 25V | 20mOhm @ 5.6A, 10V | 1V @ 250μA | 10A Ta | 92nC @ 10V | 20 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP140 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfr7740pbf-datasheets-2822.pdf | TO-247-3 | 3 | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 31A | 120A | 0.077Ohm | 100 mJ | N-Channel | 1.7pF @ 25V | 77m Ω @ 19A, 10V | 4V @ 250μA | 31A Tc | 72nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI3P20TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fql50n40-datasheets-7539.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 200V | 3.13W Ta 52W Tc | P-Channel | 250pF @ 25V | 2.7Ohm @ 1.4A, 10V | 5V @ 250μA | 2.8A Tc | 8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2910SPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irl2910spbf-datasheets-3254.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 3.8W Ta 200W Tc | N-Channel | 3.7pF @ 25V | 26mOhm @ 29A, 10V | 2V @ 250μA | 55A Tc | 140nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R190CEFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw50r190cefksa1-datasheets-3256.pdf | TO-247-3 | PG-TO247-3 | 500V | 127W Tc | N-Channel | 1.137pF @ 100V | 190mOhm @ 6.2A, 13V | 3.5V @ 510μA | 18.5A Tc | 47.2nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50R299CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipl60r255p6auma1-datasheets-8765.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 500V | 104W Tc | N-Channel | 1.19pF @ 100V | 299mOhm @ 6.6A, 10V | 3.5V @ 440μA | 12A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB9N50TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd3n40tm-datasheets-4646.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 3.13W Ta 147W Tc | 9A | 36A | 0.73Ohm | 360 mJ | N-Channel | 1.45pF @ 25V | 730m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2807SPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf2807spbf-datasheets-3269.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 75V | 230W Tc | N-Channel | 3.82pF @ 25V | 13mOhm @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP373NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-bsp373nh6327xtsa1-datasheets-3088.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 10 Weeks | 250.212891mg | No SVHC | 4 | EAR99 | AVALANCHE RATED | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1.8W | 1 | 4.6 ns | 5.9ns | 13.5 ns | 21.9 ns | 1.8A | 20V | 100V | SILICON | DRAIN | 3V | 1.8W Ta | N-Channel | 265pF @ 25V | 240m Ω @ 1.8A, 10V | 4V @ 218μA | 1.8A Ta | 9.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF8113TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf8113trpbf-datasheets-3277.pdf | 30V | 16.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 12 Weeks | No SVHC | 5.6MOhm | 8 | EAR99 | No | 2.5W | 1 | FET General Purpose Power | 13 ns | 8.9ns | 3.5 ns | 17 ns | 17.2A | 20V | 30V | Single | 6.3 mm | 2.2V | 2.5W Ta | 30V | N-Channel | 2910pF @ 15V | 2.2 V | 5.6m Ω @ 17.2A, 10V | 2.2V @ 250μA | 17.2A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD350N06LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd350n06lgbtma1-datasheets-3288.pdf | 60V | 29A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | No SVHC | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 68W | 1 | Not Qualified | R-PSSO-G2 | 29A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.6V | 68W Tc | TO-252AA | 80 mJ | N-Channel | 800pF @ 30V | 35m Ω @ 29A, 10V | 2V @ 28μA | 29A Tc | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPA50R299CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb147n03lgatma1-datasheets-6012.pdf | TO-220-3 Full Pack | PG-TO220-FP | 550V | 104W Tc | N-Channel | 1.19pF @ 100V | 299mOhm @ 6.6A, 10V | 3.5V @ 440μA | 12A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R460CEXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipa80r460cexksa1-datasheets-3306.pdf | TO-220-3 Full Pack | PG-TO220 Full Pack | 800V | 34W Tc | N-Channel | 1.6pF @ 100V | 460mOhm @ 7.1A, 10V | 3.9V @ 680μA | 5A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75645S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76437s3s-datasheets-5091.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 310W Tc | 75A | 0.014Ohm | N-Channel | 3.79pF @ 25V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB24AN06LA0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb8878-datasheets-4563.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 75W Tc | 7.8A | 0.019Ohm | 36 mJ | N-Channel | 1.85pF @ 25V | 19m Ω @ 40A, 10V | 3V @ 250μA | 7.8A Ta 40A Tc | 21nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R399CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipa50r399cpxksa1-datasheets-3231.pdf | TO-220-3 Full Pack | PG-TO220-FP | 500V | 83W Tc | N-Channel | 890pF @ 100V | 399mOhm @ 4.9A, 10V | 3.5V @ 330μA | 9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF5N80 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqpf90n10v2-datasheets-5015.pdf | TO-220-3 Full Pack | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 47W Tc | 2.8A | 11.2A | 590 mJ | N-Channel | 1.25pF @ 25V | 2.6 Ω @ 1.4A, 10V | 5V @ 250μA | 2.8A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8445-F085 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb039n06-datasheets-4247.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 40V | 92W Tc | N-Channel | 3.805pF @ 25V | 9mOhm @ 70A, 10V | 4V @ 250μA | 70A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405SPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf1405spbf-datasheets-3128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 200W Tc | N-Channel | 5.48pF @ 25V | 5.3mOhm @ 101A, 10V | 4V @ 250μA | 131A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD06N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd06n03lbg-datasheets-3137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 83W Tc | TO-252AA | 50A | 200A | 0.0061Ohm | 160 mJ | N-Channel | 2800pF @ 15V | 6.1m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDD5810 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdd7030bl-datasheets-4673.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 72W Tc | TO-252AA | 7.7A | 0.027Ohm | 45 mJ | N-Channel | 1.89pF @ 25V | 22m Ω @ 32A, 10V | 2V @ 250μA | 7.4A Ta 37A Tc | 34nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75343P3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-hufa76407dk8t-datasheets-2352.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 270W Tc | TO-220AB | 75A | 0.009Ohm | N-Channel | 3pF @ 25V | 9m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 205nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP318SH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-bsp318sh6327xtsa1-datasheets-3145.pdf | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | PG-SOT223-4 | e3 | Halogen Free | DUAL | GULL WING | 4 | 1 | Single | 1.8W | 1 | 12 ns | 15ns | 15 ns | 20 ns | 2.6A | 20V | 60V | 60V | SILICON | DRAIN | 1.6V | 1.8W Ta | 75 ns | 60 mJ | 60V | N-Channel | 380pF @ 25V | 1.6 V | 90m Ω @ 2.6A, 10V | 2V @ 20μA | 2.6A Tj | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| HUF76445S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76445s3st-datasheets-0222.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 310W Tc | 75A | 0.008Ohm | N-Channel | 4.965pF @ 25V | 6.5m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 150nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF16N25C | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqb10n20ctm-datasheets-2325.pdf | TO-3P-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 73W Tc | 11.4A | 45.6A | 0.27Ohm | 410 mJ | N-Channel | 1.08pF @ 25V | 270m Ω @ 5.7A, 10V | 4V @ 250μA | 11.4A Tc | 53.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI5N80TU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqp12n60-datasheets-9422.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 3.13W Ta 140W Tc | 4.8A | 19.2A | 590 mJ | N-Channel | 1.25pF @ 25V | 2.6 Ω @ 2.4A, 10V | 5V @ 250μA | 4.8A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF44N08 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqb16n25ctm-datasheets-3085.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 80V | 80V | 83W Tc | 35.6A | 142.4A | 0.034Ohm | 450 mJ | N-Channel | 1.43pF @ 25V | 34m Ω @ 17.8A, 10V | 4V @ 250μA | 35.6A Tc | 50nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR024NTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfu024npbf-datasheets-2557.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 45W Tc | TO-252AA | 17A | 68A | 0.075Ohm | 71 mJ | N-Channel | 370pF @ 25V | 75m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2-07 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp80n06s207-datasheets-3180.pdf | TO-220-3 | 3 | AVALANCHE RATED | unknown | MATTE TIN | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 250W Tc | TO-220AB | 80A | 320A | 0.0066Ohm | 530 mJ | N-Channel | 4.54pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V |
