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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQB10N20LTM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb3n40tm-datasheets-4610.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.13W Ta 87W Tc | 10A | 40A | 0.38Ohm | 180 mJ | N-Channel | 830pF @ 25V | 360m Ω @ 5A, 10V | 2V @ 250μA | 10A Tc | 17nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP47N10SL26AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp80n06s2l06aksa2-datasheets-8028.pdf | TO-220-3 | PG-TO220-3-1 | 100V | 175W Tc | N-Channel | 2.5pF @ 25V | 26mOhm @ 33A, 10V | 2V @ 2mA | 47A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R1K0CEXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb50r299cpatma1-datasheets-8100.pdf | TO-220-3 Full Pack | PG-TO220 Full Pack | 800V | 32W Tc | N-Channel | 785pF @ 100V | 950mOhm @ 3.6A, 10V | 3.9V @ 250μA | 3.6A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP6N50 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqp6n50-datasheets-2745.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 98W Tc | TO-220AB | 5.5A | 22A | 340 mJ | N-Channel | 790pF @ 25V | 1.3 Ω @ 2.8A, 10V | 5V @ 250μA | 5.5A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF2NA90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf5n20l-datasheets-4440.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 39W Tc | 1.7A | 6.8A | 310 mJ | N-Channel | 680pF @ 25V | 5.8 Ω @ 850mA, 10V | 5V @ 250μA | 1.7A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7324D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irf7324d1trpbf-datasheets-4858.pdf | -20V | -2.9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2W | 1 | 8-SO | 260pF | 2.2A | 12V | 20V | 2W Ta | 270mOhm | -20V | P-Channel | 260pF @ 15V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250μA | 2.2A Ta | 7.8nC @ 4.5V | Schottky Diode (Isolated) | 270 mΩ | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4620PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfsl4620pbf-datasheets-2757.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 200V | 144W Tc | N-Channel | 1.71pF @ 50V | 77.5mOhm @ 15A, 10V | 5V @ 100μA | 24A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7526D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | /files/infineontechnologies-irf7526d1trpbf-datasheets-2538.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.048mm | 910μm | 3.048mm | 8 | EAR99 | No | 800mW | 1 | Other Transistors | 9.7 ns | 12ns | 9.3 ns | 19 ns | -2A | 20V | Single | 30V | 1.25W Ta | 2A | -30V | P-Channel | 180pF @ 25V | 200m Ω @ 1.2A, 10V | 1V @ 250μA | 2A Ta | 11nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB45N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n06l-datasheets-4856.pdf | 2 | yes | LOGIC LEVEL COMPATIBLE | e0 | TIN LEAD | YES | SINGLE | GULL WING | 240 | 3 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 45A | 150A | 0.028Ohm | 240 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML5203TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlml5203trpbf-datasheets-2511.pdf | -30V | -3A | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 3.05mm | Contains Lead | 3 | 12 Weeks | No SVHC | 98MOhm | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 1.25W | 1 | Other Transistors | 12 ns | 18ns | 52 ns | 88 ns | -3A | 20V | -30V | SILICON | SWITCHING | 30V | -2.5V | 1.25W Ta | 3A | 24A | -30V | P-Channel | 510pF @ 25V | -2.5 V | 98m Ω @ 3A, 10V | 2.5V @ 250μA | 3A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PSMN7R6-60XSQ | Rochester Electronics, LLC | $2.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 Full Pack, Isolated Tab | TO-220F | 60V | 46W Tc | N-Channel | 2.651pF @ 30V | 7.8mOhm @ 25A, 10V | 4.6V @ 1mA | 51.5A Tc | 38.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB5P10TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp13n06-datasheets-4313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.75W Ta 40W Tc | 4.5A | 18A | 55 mJ | P-Channel | 250pF @ 25V | 1.05 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 8.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI04N03LA | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi80n04s4l04aksa1-datasheets-2498.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 107W Tc | 80A | 385A | 0.0067Ohm | 290 mJ | N-Channel | 3.877pF @ 15V | 4.2m Ω @ 55A, 10V | 2V @ 60μA | 80A Tc | 32nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD5N20LTF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi11n40tu-datasheets-7992.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 2.5W Ta 37W Tc | 3.8A | 15.2A | 1.25Ohm | 60 mJ | N-Channel | 325pF @ 25V | 1.2 Ω @ 1.9A, 10V | 2V @ 250μA | 3.8A Tc | 6.2nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML6346TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irlml6346trpbf-datasheets-2447.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 80MOhm | 3 | EAR99 | Micro3 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1.3W | 1 | FET General Purpose Power | Not Qualified | 150°C | 3.3 ns | 4ns | 4.9 ns | 12 ns | 3.4A | 12V | SILICON | SWITCHING | 800mV | 1.3W Ta | 13 ns | 30V | N-Channel | 270pF @ 24V | 800 mV | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 3.4A Ta | 2.9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| FQPF6N40CT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf9n50ct-datasheets-7154.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 38W Tc | TO-220AB | 6A | 24A | 1Ohm | 270 mJ | N-Channel | 625pF @ 25V | 1 Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI9435DY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-si9435dy-datasheets-2634.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 2.5W Ta | P-Channel | 690pF @ 15V | 50mOhm @ 5.3A, 10V | 3V @ 250μA | 5.3A Ta | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF7N40 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqu2n80tu-datasheets-6148.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 42W Tc | 4.6A | 18.4A | 0.8Ohm | 360 mJ | N-Channel | 780pF @ 25V | 800m Ω @ 2.3A, 10V | 5V @ 250μA | 4.6A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3105PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irlu3105pbf-datasheets-2638.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55V | N-Channel | 710pF @ 25V | 37mOhm @ 15A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP716NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsp716nh6327xtsa1-datasheets-2573.pdf | TO-261-4, TO-261AA | Lead Free | 10 Weeks | 4 | Tin | Halogen Free | PG-SOT223-4 | 315pF | 5.5ns | 2.3A | 20V | 75V | 75V | 1.8W Ta | 122mOhm | N-Channel | 315pF @ 25V | 160mOhm @ 2.3A, 10V | 1.8V @ 218μA | 2.3A Ta | 13.1nC @ 10V | 160 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR15N20DPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfr15n20dpbf-datasheets-2647.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 200V | 3W Ta 140W Tc | N-Channel | 910pF @ 25V | 165mOhm @ 10A, 10V | 5.5V @ 250μA | 17A Tc | 41nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB20N06LTM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb6n50tm-datasheets-7004.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | THROUGH-HOLE | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 3.75W Ta 53W Tc | TO-262AA | 21A | 84A | 0.07Ohm | 170 mJ | N-Channel | 630pF @ 25V | 55m Ω @ 10.5A, 10V | 2.5V @ 250μA | 21A Tc | 13nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9614-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk961455a118-datasheets-2662.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 149W | 1 | R-PSSO-G2 | 26 ns | 152ns | 125 ns | 166 ns | 73A | 10V | 55V | SILICON | DRAIN | SWITCHING | 149W Tc | 266A | 55V | N-Channel | 3307pF @ 25V | 13m Ω @ 25A, 10V | 2V @ 1mA | 73A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF1407LPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf7104pbf-datasheets-5339.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 75V | N-Channel | 5.6pF @ 25V | 7.8mOhm @ 78A, 10V | 4V @ 250μA | 100A Tc | 250nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN60R2K1CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn60r2k1ceatma1-datasheets-2607.pdf | SOT-223-3 | 3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | GULL WING | 260 | NOT SPECIFIED | 1 | 3.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 3V | 5W Tc | N-Channel | 140pF @ 100V | 2.1 Ω @ 800mA, 10V | 3.5V @ 60μA | 3.7A Tc | 6.7nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SFP9Z34 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sfp9z34-datasheets-2688.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 82W Tc | TO-220AB | 18A | 72A | 0.14Ohm | 555 mJ | P-Channel | 1.155pF @ 25V | 140m Ω @ 7A, 10V | 4V @ 250μA | 18A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N03S4L04AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp80n03s4l04aksa1-datasheets-2690.pdf | TO-220-3 | PG-TO220-3-1 | 30V | 94W Tc | N-Channel | 5.1pF @ 25V | 3.7mOhm @ 80A, 10V | 2.2V @ 45μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N03S2L-06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ss9011gbu-datasheets-7027.pdf | TO-220-3 | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 150W Tc | TO-220AB | 80A | 320A | 0.0095Ohm | 240 mJ | N-Channel | 2.53pF @ 25V | 6.2m Ω @ 80A, 10V | 2V @ 80μA | 80A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R750E6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp100n06s205aksa2-datasheets-7708.pdf | TO-220-3 | PG-TO220-3 | 600V | 48W Tc | N-Channel | 373pF @ 100V | 750mOhm @ 2A, 10V | 3.5V @ 170μA | 5.7A Tc | 17.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu4n25tu-datasheets-5068.pdf | TO-220-3 Full Pack | 3 | yes | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 45W Tc | 6.7A | 26.8A | 0.42Ohm | 165 mJ | N-Channel | 700pF @ 25V | 420m Ω @ 3.35A, 10V | 5V @ 250μA | 6.7A Tc | 20nC @ 10V | 10V | ±30V |
