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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Rise Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQI2N80TU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqi6n40ctu-datasheets-2333.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 3.13W Ta 85W Tc | 2.4A | 9.6A | 180 mJ | N-Channel | 550pF @ 25V | 6.3 Ω @ 900mA, 10V | 5V @ 250μA | 2.4A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| NDF06N60ZG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds9936-datasheets-2311.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 600V | 600V | 35W Tc | TO-220AB | 7.1A | 28A | 113 mJ | N-Channel | 1.107pF @ 25V | 1.2 Ω @ 3A, 10V | 4.5V @ 100μA | 7.1A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IPI80N06S3-07 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp100n06s205aksa1-datasheets-8102.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 135W Tc | 80A | 0.0068Ohm | N-Channel | 7.768pF @ 25V | 6.8m Ω @ 51A, 10V | 4V @ 80μA | 80A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP06N03LA | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp06n03la-datasheets-2601.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 83W Tc | TO-220AB | 50A | 350A | 0.0099Ohm | 225 mJ | N-Channel | 2.653pF @ 15V | 6.2m Ω @ 30A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| FQU1N60TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu1n60tu-datasheets-2603.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 2.5W Ta 30W Tc | 1A | 4A | 50 mJ | N-Channel | 150pF @ 25V | 11.5 Ω @ 500mA, 10V | 5V @ 250μA | 1A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IPP60R750E6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp100n06s205aksa2-datasheets-7708.pdf | TO-220-3 | PG-TO220-3 | 600V | 48W Tc | N-Channel | 373pF @ 100V | 750mOhm @ 2A, 10V | 3.5V @ 170μA | 5.7A Tc | 17.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu4n25tu-datasheets-5068.pdf | TO-220-3 Full Pack | 3 | yes | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 45W Tc | 6.7A | 26.8A | 0.42Ohm | 165 mJ | N-Channel | 700pF @ 25V | 420m Ω @ 3.35A, 10V | 5V @ 250μA | 6.7A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NTB25P06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntb25p06t4-datasheets-6604.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | e0 | TIN LEAD | YES | SINGLE | GULL WING | 225 | 3 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 60V | 60V | 120W Tj | 27.5A | 80A | 0.082Ohm | 600 mJ | P-Channel | 1.68pF @ 25V | 82m Ω @ 25A, 10V | 4V @ 250μA | 27.5A Ta | 50nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||
| IPB80N06S4L05ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipu50r950ceakma1-datasheets-5150.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 60V | 107W Tc | N-Channel | 8.18pF @ 25V | 4.8mOhm @ 80A, 10V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB5605PG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd23n03rg-datasheets-4896.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 88W Tc | 18.5A | 55A | 0.14Ohm | 338 mJ | P-Channel | 1.19pF @ 25V | 140m Ω @ 8.5A, 5V | 2V @ 250μA | 18.5A Ta | 22nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||
| IPD78CN10NGBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd78cn10ngatma1-datasheets-7794.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 31W Tc | 13A | 52A | 0.078Ohm | 17 mJ | N-Channel | 716pF @ 50V | 78m Ω @ 13A, 10V | 4V @ 12μA | 13A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| BSV236SPH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-bsv236sph6327xtsa1-datasheets-2552.pdf | -20V | -1.5A | 6-VSSOP, SC-88, SOT-363 | 2mm | 1.25mm | Contains Lead | 6 | 10 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 560mW | 1 | 8.5ns | 1.5A | 12V | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 560mW Ta | P-Channel | 228pF @ 15V | 175m Ω @ 1.5A, 4.5V | 1.2V @ 8μA | 1.5A Ta | 5.7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||
| IRF7458PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf8734pbf-datasheets-2294.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 2.41pF @ 15V | 8mOhm @ 14A, 16V | 4V @ 250μA | 14A Ta | 59nC @ 10V | 10V 16V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU8882 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdw6923-datasheets-9522.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 30V | 30V | 55W Tc | 35A | 0.015Ohm | 41 mJ | N-Channel | 1.26pF @ 15V | 11.5m Ω @ 35A, 10V | 2.5V @ 250μA | 12.6A Ta 55A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| DMT67M8LCGQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt67m8lcgq7-datasheets-2198.pdf | 8-PowerVDFN | 28 Weeks | 60V | 900mW Tc | N-Channel | 2130pF @ 30V | 5.7m Ω @ 20A, 10V | 2.5V @ 250μA | 16A Ta 64.6A Tc | 37.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF4N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6n60c-datasheets-6439.pdf | TO-220-3 Full Pack | TO-220F | 500V | 35W Tc | N-Channel | 460pF @ 25V | 2.7Ohm @ 1.15A, 10V | 5V @ 250μA | 2.3A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP14N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp55n06-datasheets-9822.pdf | TO-220-3 | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 104W Tc | TO-220AB | 14.4A | 57.6A | 0.21Ohm | 200 mJ | N-Channel | 715pF @ 25V | 210m Ω @ 7.2A, 10V | 4V @ 250μA | 14.4A Tc | 23nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| IPI80N04S4L04AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp100n04s2l03aksa2-datasheets-4006.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 40V | 71W Tc | N-Channel | 4.69pF @ 25V | 4.3mOhm @ 80A, 10V | 2.2V @ 35μA | 80A Tc | 60nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709ZPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfr3709zpbf-datasheets-2523.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 79W Tc | N-Channel | 2.33pF @ 15V | 6.5mOhm @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD110N02R | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd3055l1701g-datasheets-4903.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | unknown | e0 | TIN LEAD | YES | SINGLE | GULL WING | 235 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 24V | 24V | 1.5W Ta 110W Tc | 12.5A | 110A | 0.0062Ohm | 120 mJ | N-Channel | 3.44pF @ 20V | 4.6m Ω @ 20A, 10V | 2V @ 250μA | 12.5A Ta 110A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| NTMS4107NR2G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp4302g-datasheets-2269.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 930mW Ta | N-Channel | 6pF @ 15V | 4.5mOhm @ 15A, 10V | 2.5V @ 250μA | 11A Ta | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP77N06S3-09 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips105n03lgakma1-datasheets-5183.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 107W Tc | TO-220AB | 77A | 308A | 0.0091Ohm | 170 mJ | N-Channel | 5.335pF @ 25V | 9.1m Ω @ 39A, 10V | 4V @ 55μA | 77A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPP60R950C6XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipd50n06s4l12atma1-datasheets-4370.pdf | TO-220-3 | PG-TO220-3 | 600V | 37W Tc | N-Channel | 280pF @ 100V | 950mOhm @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI32N12V2TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi7n10ltu-datasheets-4178.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | unknown | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 120V | 120V | 3.75W Ta 150W Tc | 32A | 128A | 0.05Ohm | 439 mJ | N-Channel | 1.86pF @ 25V | 50m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FQD2P40TF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd630tf-datasheets-4296.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 2.5W Ta 38W Tc | 1.56A | 6.24A | 120 mJ | P-Channel | 350pF @ 25V | 6.5 Ω @ 780mA, 10V | 5V @ 250μA | 1.56A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NTD25P03LG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd25p03lt4-datasheets-4611.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30V | 75W Tj | P-Channel | 1.26pF @ 25V | 80mOhm @ 25A, 5V | 2V @ 250μA | 25A Ta | 20nC @ 5V | 4V 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75332S3S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76404dk8t-datasheets-2252.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 145W Tc | 60A | 0.019Ohm | N-Channel | 1.3pF @ 25V | 19m Ω @ 60A, 10V | 4V @ 250μA | 60A Tc | 85nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||
| BSC240N12NS3 G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bs170rlrm-datasheets-0723.pdf | 8-PowerTDFN | PG-TDSON-8-1 | 120V | 66W Tc | N-Channel | 1900pF @ 60V | 24mOhm @ 31A, 10V | 4V @ 35μA | 37A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO065N03MSGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-bso065n03msgxuma1-datasheets-2411.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | PG-DSO-8 | 3.1nF | 13A | 30V | 1.56W Ta | N-Channel | 3100pF @ 15V | 6.5mOhm @ 16A, 10V | 2V @ 250μA | 13A Ta | 40nC @ 10V | 6.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SPD18P06P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spd18p06p-datasheets-2475.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 80W Tc | 18.6A | 74.4A | 0.13Ohm | 150 mJ | P-Channel | 860pF @ 25V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.6A Tc | 33nC @ 10V | 10V | ±20V |
