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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSC240N12NS3 G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bs170rlrm-datasheets-0723.pdf | 8-PowerTDFN | PG-TDSON-8-1 | 120V | 66W Tc | N-Channel | 1900pF @ 60V | 24mOhm @ 31A, 10V | 4V @ 35μA | 37A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO065N03MSGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-bso065n03msgxuma1-datasheets-2411.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | PG-DSO-8 | 3.1nF | 13A | 30V | 1.56W Ta | N-Channel | 3100pF @ 15V | 6.5mOhm @ 16A, 10V | 2V @ 250μA | 13A Ta | 40nC @ 10V | 6.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD18P06P | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spd18p06p-datasheets-2475.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 80W Tc | 18.6A | 74.4A | 0.13Ohm | 150 mJ | P-Channel | 860pF @ 25V | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 18.6A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RJK0332DPB-00#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | SC-100, SOT-669 | LFPAK | 30V | N-Channel | 2.18pF @ 10V | 4.7mOhm @ 17.5A, 10V | 35A Ta | 14nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP216-TL-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-atp404tlh-datasheets-7309.pdf | ATPAK (2 leads+tab) | ATPAK | 50V | 40W Tc | N-Channel | 2.7pF @ 20V | 23mOhm @ 18A, 4.5V | 35A Ta | 30nC @ 4.5V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPU01N60C3BKMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spd30n03s2l07gbtma1-datasheets-5585.pdf | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 650V | 11W Tc | N-Channel | 100pF @ 25V | 6Ohm @ 500mA, 10V | 3.9V @ 250μA | 800mA Tc | 5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD6416AN-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntgs3441t1-datasheets-1935.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 100V | 71W Tc | N-Channel | 620pF @ 25V | 81mOhm @ 17A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFR9024TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sfr9024tm-datasheets-2420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 32W Tc | 7.8A | 31A | 0.28Ohm | 104 mJ | P-Channel | 600pF @ 25V | 280m Ω @ 3.9A, 10V | 4V @ 250μA | 7.8A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| NTD24N06L-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd24n06lt4-datasheets-4680.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 2 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.36W Ta 62.5W Tj | 24A | 72A | 0.045Ohm | 162 mJ | N-Channel | 1.14pF @ 25V | 45m Ω @ 10A, 5V | 2V @ 250μA | 24A Ta | 32nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||
| FQD4P25TF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi10n20ctu-datasheets-4661.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 2.5W Ta 45W Tc | 3.1A | 12.4A | 280 mJ | P-Channel | 420pF @ 25V | 2.1 Ω @ 1.55A, 10V | 5V @ 250μA | 3.1A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| HUFA76419S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76419p3-datasheets-5679.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 75W Tc | 29A | 0.04Ohm | N-Channel | 900pF @ 25V | 35m Ω @ 29A, 10V | 3V @ 250μA | 29A Tc | 28nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IPI77N06S3-09 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ips105n03lgakma1-datasheets-5183.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 107W Tc | 77A | 308A | 0.0091Ohm | 170 mJ | N-Channel | 5.335pF @ 25V | 9.1m Ω @ 39A, 10V | 4V @ 55μA | 77A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR3303PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfr3303pbf-datasheets-2375.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 57W Tc | N-Channel | 750pF @ 25V | 31mOhm @ 18A, 10V | 4V @ 250μA | 33A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7488PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf9392pbf-datasheets-2265.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 80V | 2.5W Ta | N-Channel | 1.68pF @ 25V | 29mOhm @ 3.8A, 10V | 4V @ 250μA | 6.3A Ta | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP09N03LA | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp60r1k4c6xksa1-datasheets-4497.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 63W Tc | TO-220AB | 50A | 350A | 0.0155Ohm | 75 mJ | N-Channel | 1.642pF @ 15V | 9.2m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SFT1431-TL-W | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sft1431w-datasheets-2369.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK/TP-FA | 35V | 1W Ta 15W Tc | N-Channel | 960pF @ 20V | 25mOhm @ 5.5A, 10V | 2.6V @ 1mA | 11A Ta | 17.3nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP18N06L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntr4502pt1-datasheets-1893.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 48.4W Tc | TO-220AB | 15A | 45A | 0.1Ohm | 61 mJ | N-Channel | 440pF @ 25V | 100m Ω @ 7.5A, 5V | 2V @ 250μA | 15A Tc | 20nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| FQPF4N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6p25-datasheets-7635.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 47W Tc | 2.5A | 10A | 570 mJ | N-Channel | 1.1pF @ 25V | 3.3 Ω @ 1.25A, 10V | 5V @ 250μA | 2.5A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT100MC120JCU2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 1997 | /files/microsemicorporation-apt100mc120jcu2-datasheets-2398.pdf | SOT-227-4, miniBLOC | Lead Free | 16 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 1 | FET General Purpose Power | 143A | 1200V | 600W Tc | 25A | N-Channel | 5960pF @ 1000V | 17m Ω @ 100A, 20V | 2.3V @ 2mA | 143A Tc | 360nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF5N30 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf7n20-datasheets-4327.pdf | TO-220-3 Full Pack | TO-220F | 300V | 35W Tc | N-Channel | 430pF @ 25V | 900mOhm @ 1.95A, 10V | 5V @ 250μA | 3.9A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8113GPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfd9123-datasheets-7464.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 2.91pF @ 15V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250μA | 17.2A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP02N60C3XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp02n60c3xksa1-datasheets-2410.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76429P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76429p3-datasheets-2350.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | TO-220AB | 47A | 0.025Ohm | N-Channel | 1.48pF @ 25V | 22m Ω @ 47A, 10V | 3V @ 250μA | 47A Tc | 46nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IRFML8244TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfml8244trpbf-datasheets-2352.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 41MOhm | 3 | EAR99 | No | Micro3 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 2.7 ns | 2.1ns | 2.9 ns | 9 ns | 5.8A | 20V | SILICON | SWITCHING | 1.7V | 1.25W Ta | 17 ns | 24A | 25V | N-Channel | 430pF @ 10V | 1.7 V | 24m Ω @ 5.8A, 10V | 2.35V @ 10μA | 5.8A Ta | 5.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IRFR48ZPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfu3806pbf-datasheets-4790.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 55V | 91W Tc | N-Channel | 1.72pF @ 25V | 11mOhm @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76432P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75307p3-datasheets-5338.pdf | TO-220-3 | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 130W Tc | TO-220AB | 59A | 0.019Ohm | N-Channel | 1.765pF @ 25V | 17m Ω @ 59A, 10V | 3V @ 250μA | 59A Tc | 53nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPP065N04N G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi65r150cfdxksa1-datasheets-2794.pdf | TO-220-3 | PG-TO220-3 | 40V | 68W Tc | N-Channel | 2.8pF @ 20V | 6.5mOhm @ 50A, 10V | 4V @ 200μA | 50A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT1431-W | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sft1431w-datasheets-2369.pdf | TO-251-3 Short Leads, IPak, TO-251AA | IPAK/TP | 35V | 1W Ta 15W Tc | N-Channel | 960pF @ 20V | 25mOhm @ 5.5A, 10V | 2.6V @ 1mA | 11A Ta | 17.3nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI1P50TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi1p50tu-datasheets-2328.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 3.13W Ta 63W Tc | 1.5A | 6A | 110 mJ | P-Channel | 350pF @ 25V | 10.5 Ω @ 750mA, 10V | 5V @ 250μA | 1.5A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| FQB2N50TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb70n08tm-datasheets-9282.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 3.13W Ta 55W Tc | 2.1A | 8.4A | 120 mJ | N-Channel | 230pF @ 25V | 5.3 Ω @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 8nC @ 10V | 10V | ±30V |
