Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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SFT1350-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sft1350tlh-datasheets-4445.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TP | 40V | 1W Ta 23W Tc | P-Channel | 590pF @ 20V | 59mOhm @ 9.5A, 10V | 19A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMPH4013SK3-13 | Diodes Incorporated | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.1W Ta | P-Channel | 4004pF @ 20V | 15m Ω @ 10A, 10V | 3V @ 250μA | 55A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQPF8P10 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqu3n60tu-datasheets-5248.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 28W Tc | 5.3A | 21.2A | 0.53Ohm | 150 mJ | P-Channel | 470pF @ 25V | 530m Ω @ 2.65A, 10V | 4V @ 250μA | 5.3A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
IRLR8729PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irlr8729pbf-datasheets-2342.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 55W Tc | N-Channel | 1.35pF @ 15V | 8.9mOhm @ 25A, 10V | 2.35V @ 25μA | 58A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD20N06LG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd20n06l1g-datasheets-5327.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60V | 1.36W Ta 60W Tj | N-Channel | 990pF @ 25V | 48mOhm @ 10A, 5V | 2V @ 250μA | 20A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQD20N06TF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd5n30tf-datasheets-4561.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 38W Tc | 16.8A | 67.2A | 0.063Ohm | 155 mJ | N-Channel | 590pF @ 25V | 63m Ω @ 8.4A, 10V | 4V @ 250μA | 16.8A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
NTD4904N-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd60n03t4-datasheets-5413.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 13A | 316A | 0.0055Ohm | 68.4 mJ | N-Channel | 3.052pF @ 15V | 3.7m Ω @ 30A, 10V | 2.2V @ 250μA | 13A Ta 79A Tc | 41nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||
HUFA76429P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76429p3-datasheets-2350.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | TO-220AB | 47A | 0.025Ohm | N-Channel | 1.48pF @ 25V | 22m Ω @ 47A, 10V | 3V @ 250μA | 47A Tc | 46nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
IRFML8244TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfml8244trpbf-datasheets-2352.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 41MOhm | 3 | EAR99 | No | Micro3 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 2.7 ns | 2.1ns | 2.9 ns | 9 ns | 5.8A | 20V | SILICON | SWITCHING | 1.7V | 1.25W Ta | 17 ns | 24A | 25V | N-Channel | 430pF @ 10V | 1.7 V | 24m Ω @ 5.8A, 10V | 2.35V @ 10μA | 5.8A Ta | 5.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
BUK663R5-30C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk663r530c118-datasheets-1846.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | Tin | No | e3 | YES | GULL WING | 3 | Single | 158W | 1 | R-PSSO-G2 | 19 ns | 54ns | 83 ns | 135 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 158W Tc | 616A | 0.0058Ohm | 242 mJ | 30V | N-Channel | 4707pF @ 25V | 3.5m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 78nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
FQP10N20CTSTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp3n60-datasheets-6199.pdf | TO-220-3 | TO-220-3 | 200V | 72W Tc | N-Channel | 510pF @ 25V | 360mOhm @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD18N06L-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd3813n35g-datasheets-5346.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.1W Ta 55W Tj | 18A | 54A | 0.065Ohm | 72 mJ | N-Channel | 675pF @ 25V | 65m Ω @ 9A, 5V | 2V @ 250μA | 18A Ta | 22nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||
FQB10N20CTM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb3n30tm-datasheets-4736.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 72W Tc | 9.5A | 38A | 0.36Ohm | 210 mJ | N-Channel | 510pF @ 25V | 360m Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
IXFN62N80Q3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfn62n80q3-datasheets-2290.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 140MOhm | 4 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 54 ns | 300ns | 62 ns | 49A | 30V | SILICON | ISOLATED | SWITCHING | 960W Tc | 180A | 5000 mJ | 800V | N-Channel | 13600pF @ 25V | 140m Ω @ 31A, 10V | 6.5V @ 8mA | 49A Tc | 270nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
IRF8734PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfp244-datasheets-0372.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 3.175pF @ 15V | 3.5mOhm @ 21A, 10V | 2.35V @ 50μA | 21A Ta | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD18N06LG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd3813n35g-datasheets-5346.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.1W Ta 55W Tj | 18A | 54A | 0.065Ohm | 72 mJ | N-Channel | 675pF @ 25V | 65m Ω @ 9A, 5V | 2V @ 250μA | 18A Ta | 22nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||
IPD30N12S3L31ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipd30n12s3l31atma1-datasheets-2297.pdf | 2 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 30A | 120A | 0.042Ohm | 138 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||
FQB13N06LTM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb45n15v2tm-datasheets-3949.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.75W Ta 45W Tc | 13.6A | 54.4A | 0.14Ohm | 90 mJ | N-Channel | 350pF @ 25V | 110m Ω @ 6.8A, 10V | 2.5V @ 250μA | 13.6A Tc | 6.4nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPP45N06S3L-13 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi80n06s4l05aksa1-datasheets-7405.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 65W Tc | TO-220AB | 45A | 180A | 0.0134Ohm | 95 mJ | N-Channel | 3.6pF @ 25V | 13.4m Ω @ 26A, 10V | 2.2V @ 30μA | 45A Tc | 75nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
FQPF6N25 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf6n25-datasheets-2306.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 37W Tc | 4A | 16A | 1Ohm | 75 mJ | N-Channel | 300pF @ 25V | 1 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
IPI45N06S3L-13 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi80n06s4l05aksa1-datasheets-7405.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 65W Tc | 45A | 180A | 0.0134Ohm | 95 mJ | N-Channel | 3.6pF @ 25V | 13.4m Ω @ 26A, 10V | 2.2V @ 30μA | 45A Tc | 75nC @ 10V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
FQD2N60CTF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd5n50ctm-datasheets-5260.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 600V | 2.5W Ta 44W Tc | N-Channel | 235pF @ 25V | 4.7Ohm @ 950mA, 10V | 4V @ 250μA | 1.9A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQB2P25TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqb7n10tm-datasheets-4267.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 3.13W Ta 52W Tc | 2.3A | 9.2A | 4Ohm | 120 mJ | P-Channel | 250pF @ 25V | 4 Ω @ 1.15A, 10V | 5V @ 250μA | 2.3A Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
FDP8876 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds3612-datasheets-6290.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 70W Tc | TO-220AB | 70A | 0.0105Ohm | 180 mJ | N-Channel | 1.7pF @ 15V | 8.7m Ω @ 40A, 10V | 2.5V @ 250μA | 70A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPD50R1K4CEBTMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw60r250cp-datasheets-3692.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 500V | 25W Tc | N-Channel | 178pF @ 100V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70μA | 3.1A Tc | 1nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSO119N03S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bso330n02kgfuma1-datasheets-2813.pdf | 8-SOIC (0.154, 3.90mm Width) | PG-DSO-8 | 30V | 1.56W Ta | N-Channel | 1730pF @ 15V | 11.9mOhm @ 11A, 10V | 2V @ 25μA | 9A Ta | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R460CEATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n07s405atma1-datasheets-9327.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 600V | 74W Tc | N-Channel | 620pF @ 100V | 460mOhm @ 3.4A, 10V | 3.5V @ 280μA | 9.1A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMIX1F132N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f132n50p3-datasheets-2252.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 30 Weeks | 24 | Single | FET General Purpose Power | 42 ns | 90 ns | 63A | 40V | 500V | 520W Tc | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
NVMFS4C03NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfs4c03nt3g-datasheets-0692.pdf | 8-PowerTDFN | Lead Free | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | FET General Purpose Power | R-PDSO-F5 | 143A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.71W Ta 77W Tc | 900A | 0.0024Ohm | 549 mJ | N-Channel | 3071pF @ 15V | 2.1m Ω @ 30A, 10V | 2.2V @ 250μA | 31.4A Ta 143A Tc | 45.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
HUF75333S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75623p3-datasheets-5041.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | unknown | e0 | TIN LEAD | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 150W Tc | 66A | 0.016Ohm | N-Channel | 1.3pF @ 25V | 16m Ω @ 66A, 10V | 4V @ 250μA | 66A Tc | 85nC @ 20V | 10V | ±20V |
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